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Author Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R.
Title Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors Type Journal Article
Year 2003 Publication Electron. Lett. Abbreviated Journal Electron. Lett.
Volume 39 Issue 14 Pages 1086-1088
Keywords NbN SSPD, SNSPD, applications
Abstract The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
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Series Volume Series Issue Edition
ISSN 0013-5194 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1512
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Author Kahl, O.; Ferrari, S.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P.
Title Waveguide integrated superconducting single-photon detectors with high internal quantum efficiency at telecom wavelengths Type Journal Article
Year 2015 Publication Sci. Rep. Abbreviated Journal Sci. Rep.
Volume 5 Issue Pages 10941 (1 to 11)
Keywords optical waveguides; waveguide integrated SSPD; waveguide SSPD; nanophotonics
Abstract Superconducting nanowire single-photon detectors (SNSPDs) provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, compatibility with an integrated optical platform is a crucial requirement for applications in emerging quantum photonic technologies. Here we present efficiencies close to unity at 1550nm wavelength. This allows for the SNSPDs to be operated at bias currents far below the critical current where unwanted dark count events reach milli-Hz levels while on-chip detection efficiencies above 70% are maintained. The measured dark count rates correspond to noiseequivalent powers in the 10–19W/Hz–1/2 range and the timing jitter is as low as 35ps. Our detectors are fully scalable and interface directly with waveguide-based optical platforms.
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Notes PMID:26061283; PMCID:PMC4462017 Approved no
Call Number RPLAB @ kovalyuk @ Serial 946
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Author Murphy, A.; Semenov, A.; Korneev, A.; Korneeva, Y.; Gol'tsman, G.; Bezryadin, A.
Title Three temperature regimes in superconducting photon detectors: quantum, thermal and multiple phase-slips as generators of dark counts Type Journal Article
Year 2015 Publication Sci. Rep. Abbreviated Journal Sci. Rep.
Volume 5 Issue Pages 10174 (1 to 10)
Keywords SPD, SSPD, SNSPD
Abstract We perform measurements of the switching current distributions of three w approximately 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter of the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijarvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors. At the highest temperatures the system enters a multiple phase-slip regime. In this range single phase-slips are unable to produce dark counts and the fluctuations in the switching current are reduced.
Address Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2045-2322 ISBN Medium
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Notes PMID:25988591; PMCID:PMC4437302 Approved no
Call Number Serial 1344
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Author Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K.
Title Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation Type Journal Article
Year 2020 Publication Sci. Rep. Abbreviated Journal Sci. Rep.
Volume 10 Issue 1 Pages 16819
Keywords VN HEB
Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.
Address National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia
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Series Volume Series Issue Edition
ISSN 2045-2322 ISBN Medium
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Notes PMID:33033360; PMCID:PMC7546726 Approved no
Call Number Serial 1797
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Author Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Shcherbatenko, M.; Lobanov, Y.; Ozhegov, R.; Korneev, A.; Kaurova, N.; Voronov, B.; Pernice, W.; Gol'tsman, G.
Title On-chip coherent detection with quantum limited sensitivity Type Journal Article
Year 2017 Publication Sci Rep Abbreviated Journal Sci Rep
Volume 7 Issue 1 Pages 4812
Keywords waveguide, SSPD, SNSPD
Abstract While single photon detectors provide superior intensity sensitivity, spectral resolution is usually lost after the detection event. Yet for applications in low signal infrared spectroscopy recovering information about the photon's frequency contributions is essential. Here we use highly efficient waveguide integrated superconducting single-photon detectors for on-chip coherent detection. In a single nanophotonic device, we demonstrate both single-photon counting with up to 86% on-chip detection efficiency, as well as heterodyne coherent detection with spectral resolution f/f exceeding 10(11). By mixing a local oscillator with the single photon signal field, we observe frequency modulation at the intermediate frequency with ultra-low local oscillator power in the femto-Watt range. By optimizing the nanowire geometry and the working parameters of the detection scheme, we reach quantum-limited sensitivity. Our approach enables to realize matrix integrated heterodyne nanophotonic devices in the C-band wavelength range, for classical and quantum optics applications where single-photon counting as well as high spectral resolution are required simultaneously.
Address National Research University Higher School of Economics, Moscow, 101000, Russia. ggoltsman@hse.ru
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2045-2322 ISBN Medium
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Notes PMID:28684752; PMCID:PMC5500578 Approved no
Call Number RPLAB @ kovalyuk @ Serial 1129
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Author Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A.
Title Tunnel field-effect transistors for sensitive terahertz detection Type Journal Article
Year 2021 Publication Nat. Commun. Abbreviated Journal Nat. Commun.
Volume 12 Issue 1 Pages 543
Keywords field-effect transistors, bilayer graphene, BLG
Abstract The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
Address Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu
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Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2041-1723 ISBN Medium
Area Expedition Conference
Notes PMID:33483488; PMCID:PMC7822863 Approved no
Call Number Serial 1261
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Author Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G.
Title Resonant terahertz detection using graphene plasmons Type Journal Article
Year 2018 Publication Nat. Commun. Abbreviated Journal Nat. Commun.
Volume 9 Issue Pages 5392 (1 to 8)
Keywords THz, graphene plasmons
Abstract Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications.
Address Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2041-1723 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1148
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Author Khasminskaya, S.; Pyatkov, F.; Słowik, K.; Ferrari, S.; Kahl, O.; Kovalyuk, V.; Rath, P.; Vetter, A.; Hennrich, F.; Kappes, M. M.; Gol'tsman, G.; Korneev, A.; Rockstuhl, C.; Krupke, R.; Pernice, W. H. P.
Title Fully integrated quantum photonic circuit with an electrically driven light source Type Journal Article
Year 2016 Publication Nat. Photon. Abbreviated Journal Nat. Photon.
Volume 10 Issue 11 Pages 727-732
Keywords Carbon nanotubes and fullerenes, Integrated optics, Single photons and quantum effects, Waveguide integrated single-photon detector
Abstract Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices.
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Call Number RPLAB @ kovalyuk @ Serial 1105
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Author Divochiy, Aleksander; Marsili, Francesco; Bitauld, David; Gaggero, Alessandro; Leoni, Roberto; Mattioli, Francesco; Korneev, Alexander; Seleznev, Vitaliy; Kaurova, Nataliya; Minaeva, Olga; Gol'tsman, Gregory; Lagoudakis, Konstantinos G.; Benkhaoul, Moushab; Lévy, Francis; Fiore, Andrea
Title Superconducting nanowire photon-number-resolving detector at telecommunication wavelengths Type Journal Article
Year 2008 Publication Nat. Photon. Abbreviated Journal Nat. Photon.
Volume 2 Issue 5 Pages 302-306
Keywords SSPD, photon-number-resolving
Abstract Optical-to-electrical conversion, which is the basis of the operation of optical detectors, can be linear or nonlinear. When high sensitivities are needed, single-photon detectors are used, which operate in a strongly nonlinear mode, their response being independent of the number of detected photons. However, photon-number-resolving detectors are needed, particularly in quantum optics, where n-photon states are routinely produced. In quantum communication and quantum information processing, the photon-number-resolving functionality is key to many protocols, such as the implementation of quantum repeaters1 and linear-optics quantum computing2. A linear detector with single-photon sensitivity can also be used for measuring a temporal waveform at extremely low light levels, such as in long-distance optical communications, fluorescence spectroscopy and optical time-domain reflectometry. We demonstrate here a photon-number-resolving detector based on parallel superconducting nanowires and capable of counting up to four photons at telecommunication wavelengths, with an ultralow dark count rate and high counting frequency.
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Notes Approved no
Call Number Serial 916
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Author Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X.
Title High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits Type Journal Article
Year 2012 Publication Nat. Commun. Abbreviated Journal Nat. Commun.
Volume 3 Issue Pages 1325 (1 to 10)
Keywords waveguide SSPD
Abstract Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics.
Address Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2041-1723 ISBN Medium
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Notes PMID:23271658; PMCID:PMC3535416 Approved no
Call Number Serial 1375
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Author Gol'tsman, G. N.; Loudkov, D. N.
Title Terahertz superconducting hot-electron bolometer mixers and their application in radio astronomy Type Journal Article
Year 2003 Publication Radiophys. Quant. Electron. Abbreviated Journal
Volume 46 Issue 8/9 Pages 604-617
Keywords NbN HEB mixers
Abstract We review the latest developments, research, and radioastronomy applications of hot-electron bolometer (HEB) mixers operated in the terahertz waveband. The physical principles of operation of terahertz HEB mixers are presented, their manufacturing from ultrathin NbN films, the main HEB-mixer parameters and their measurement techniques are discussed, and practical terahertz radioastronomy projects based on heterodyne receivers with HEB mixers are considered.
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ISSN 0033-8443 ISBN Medium
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Notes UDC 537.312.62 Approved no
Call Number Serial 472
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Author Vetter, A.; Ferrari, S.; Rath, P.; Alaee, R.; Kahl, O.; Kovalyuk, V.; Diewald, S.; Goltsman, G. N.; Korneev, A.; Rockstuhl, C.; Pernice, W. H. P.
Title Cavity-enhanced and ultrafast superconducting single-photon detectors Type Journal Article
Year 2016 Publication Nano Lett. Abbreviated Journal Nano Lett.
Volume 16 Issue 11 Pages 7085-7092
Keywords SSPD; SNSPD; multiphoton detection; nanophotonic circuit; photonic crystal cavity
Abstract Ultrafast single-photon detectors with high efficiency are of utmost importance for many applications in the context of integrated quantum photonic circuits. Detectors based on superconductor nanowires attached to optical waveguides are particularly appealing for this purpose. However, their speed is limited because the required high absorption efficiency necessitates long nanowires deposited on top of the waveguide. This enhances the kinetic inductance and makes the detectors slow. Here, we solve this problem by aligning the nanowire, contrary to usual choice, perpendicular to the waveguide to realize devices with a length below 1 mum. By integrating the nanowire into a photonic crystal cavity, we recover high absorption efficiency, thus enhancing the detection efficiency by more than an order of magnitude. Our cavity enhanced superconducting nanowire detectors are fully embedded in silicon nanophotonic circuits and efficiently detect single photons at telecom wavelengths. The detectors possess subnanosecond decay ( approximately 120 ps) and recovery times ( approximately 510 ps) and thus show potential for GHz count rates at low timing jitter ( approximately 32 ps). The small absorption volume allows efficient threshold multiphoton detection.
Address Institute of Physics, University of Munster , 48149 Munster, Germany
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Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1530-6984 ISBN Medium
Area Expedition Conference
Notes PMID:27759401 Approved no
Call Number Serial 1208
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Author Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P.
Title Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes Type Journal Article
Year 2015 Publication Nano Lett. Abbreviated Journal Nano Lett.
Volume 15 Issue 12 Pages 7859-7866
Keywords carbon nanotubes, CNT, tunable superconductivity, van Hove singularities
Abstract Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube.
Address Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States
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ISSN 1530-6984 ISBN Medium
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Notes PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 Approved no
Call Number Serial 1782
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Author Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S.
Title Helicity-sensitive plasmonic terahertz interferometer Type Journal Article
Year 2020 Publication Nano Lett. Abbreviated Journal Nano Lett.
Volume 20 Issue 10 Pages 7296-7303
Keywords graphene, plasmonic interferometer, radiation helicity, terahertz radiation
Abstract Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials.
Address CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland
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ISSN 1530-6984 ISBN Medium
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Notes PMID:32903004 Approved no
Call Number Serial 1781
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Author Gol'tsman, G. N.
Title Hot electron bolometric mixers: new terahertz technology Type Journal Article
Year 1999 Publication Infrared Physics & Technology Abbreviated Journal Infrared Physics & Technology
Volume 40 Issue 3 Pages 199-206
Keywords NbN HEB mixers
Abstract This paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixers has crossed the level of 1 K GHz−1 at 430 GHz (410 K), 600–650 GHz (480 K), 750 GHz (600 K), 810 GHz (780 K) and is close to that level at 1.1 THz (1250 K) and 2.5 THz (4500 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and about 100 nW for mixers made by e-beam lithography. A waveguide version of 800 GHz receiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, AZ, to conduct astronomical observations of known submillimeter lines (CO, J=7→6, CI, J=2→1). It was proved that the receiver works as a practical instrument.
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ISSN 1350-4495 ISBN Medium
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Notes Approved no
Call Number Serial 1570
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