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Moshkova, M., Divochiy, A., Morozov, P., Vakhtomin, Y., Antipov, A., Zolotov, P., et al. (2019). High-performance superconducting photon-number-resolving detectors with 86% system efficiency at telecom range. J. Opt. Soc. Am. B, 36(3), B20.
Abstract: The use of improved fabrication technology, highly disordered NbN thin films, and intertwined section topology makes it possible to create high-performance photon-number-resolving superconducting single-photon detectors (PNR SSPDs) that are comparable to conventional single-element SSPDs at the telecom range. The developed four-section PNR SSPD has simultaneously an 86±3% system detection efficiency, 35 cps dark count rate, ∼2 ns dead time, and maximum 90 ps jitter. An investigation of the PNR SSPD’s detection efficiency for multiphoton events shows good uniformity across sections. As a result, such a PNR SSPD is a good candidate for retrieving the photon statistics for light sources and quantum key distribution systems.
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Zolotov, P., Divochiy, A., Vakhtomin, Y., Seleznev, V., Morozov, P., & Smirnov, K. (2018). Superconducting single-photon detectors made of ultra-thin VN films. In KnE Energy (Vol. 3, pp. 83–89).
Abstract: We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I
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Zolotov, P. I., Vakhtomin, Y. B., Divochiy, A. V., Seleznev, V. A., & Smirnov, K. V. (2016). Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons. Proc. 5th Int. Conf. Photonics and Information Optics, , 115–116.
Abstract: This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures.
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Romanov, N. R., Zolotov, P. I., & Smirnov, K. V. (2019). Development of disordered ultra-thin superconducting vanadium nitride films. In Proc. 8th Int. Conf. Photonics and Information Optics (pp. 425–426).
Abstract: We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained.
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Zolotov, P., Vakhtomin, Y., Divochiy, A., Morozov, P., Seleznev, V., & Smirnov, K. (2017). Development of fast and high-effective single-photon detector for spectrum range up to 2.3 μm. In Proc. SPBOPEN (pp. 439–440).
Abstract: We present the results of development and testing of the single-photon-counting system operating in the wide spectrum rane up to 2.3 mcm. We managed to increase system detection efficiency up to 60% in the range of 1.7-2.3 mcm optimisation of the fabrication methods of superconducting single-photon detectors and application of the single-mode fiber with enlarged core diameter.
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