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Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. |
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Title |
Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ |
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Journal Article |
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1986 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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20 |
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1 |
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99-103 |
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n-Ge, Hubbard upper zone conductivity, negative magnetoresistance |
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В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. |
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1759 |
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Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
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Title |
Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца |
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1985 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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19 |
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9 |
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1696-1698 |
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uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation |
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1760 |
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Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
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Title |
О механизме динамического сужения линии ЭПР доноров фосфора в кремнии |
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Journal Article |
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1984 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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18 |
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3 |
Pages |
421-425 |
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Si, phosphorus donors, EPR |
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Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам. |
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1761 |
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Author |
Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. |
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Title |
Об одном способе определения концентрации глубоких примесей в германии |
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1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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17 |
Issue |
10 |
Pages |
1896-1898 |
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Ge, deep impurities |
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1762 |
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Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. |
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Title |
Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда |
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Journal Article |
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Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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17 |
Issue |
10 |
Pages |
1873-1876 |
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Keywords |
compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance |
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1763 |
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Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. |
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Title |
О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси |
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Journal Article |
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1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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17 |
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3 |
Pages |
499-501 |
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shallow neutral impurities, capture, inverse distribution function, Si |
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1764 |
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Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
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Journal Article |
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1975 |
Publication |
Sov. Phys. JETP |
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Sov. Phys. JETP |
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40 |
Issue |
2 |
Pages |
311-315 |
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Ge, cyclotron resonance |
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Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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Author |
Goltsman, Gregory N. |
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Title |
Development and applications of terahertz hot electron bolometers |
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2021 |
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1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments |
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1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments |
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The development of techniques and technologies for the deposition of ultrathin superconducting films, the creation of superconducting structures on a nanometer scale is the basis of significant progress in the field of superconducting receiving systems. Ultrathin NbN films are the basis for a wide range of record-breaking hot electron devices: direct and heterodyne terahertz detectors. Terahertz receivers are especially in demand in high-resolution spectroscopy for astronomical, atmospheric, and medical research. HEB receivers are widely used in terahertz radio astronomy. For example, the Dutch SRON Institute is preparing a project for the GUSTO hot air balloon telescope with a HEB mixer array at 1.4 THz and 1.9 THz. A 5-meter Chinese terahertz telescope DATE5 with HEB mixers at 1.4 THz is installed at the South Pole. The Stratospheric Observatory (SOFIA) uses HEB mixer matrices in the GREAT instrument operating in the 1.2 – 4.7 THz range. It is planned to implement the international project Origins Space Telescope (OST) in the far infrared region based on HEB receivers. The Japanese project Smiles-2 will allow measurements at 1.8 THz in the upper layers of the stratosphere and mesosphere. The development of the Millimetron space observatory continues in Russia. |
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First Moscow International Conference on Submillimeter and Millimeter Astronomy: Objectives and Instruments, Astro Space Center, Moscow, 12-16 April 2021, id. 2 |
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Downloaded from https://millimetron.ru/conference_2021/Goltsman.pdf; Author: Sergey; Last modification: 2021-04-14 |
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1771 |
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Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
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1976 |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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10 |
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1379-1383 |
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Ge, cyclotron resonance, charged impurities, |
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1772 |
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Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
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Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
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1975 |
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JETP Lett. |
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JETP Lett. |
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22 |
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4 |
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95-97 |
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Ge, impurities, excited states, absorption spectra |
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1773 |
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