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Title |
ГОСТ 19.401-78. ЕСПД. Текст программы. Требования к содержанию и оформлению |
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Book Whole |
Year |
1983 |
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1 |
Keywords |
gost, detproj |
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RPLAB @ s @ |
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891 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Title |
Kinetics of electron and hole binding into excitons in germanium |
Type |
Journal Article |
Year |
1983 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
57 |
Issue |
2 |
Pages |
369-376 |
Keywords |
Ge, electron and hole binding |
Abstract |
The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
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1711 |
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Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Кагане, М. Л.; Мултановский, В. В.; Птицина, Н. Г. |
Title |
Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках |
Type |
Journal Article |
Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
Volume |
17 |
Issue |
8 |
Pages |
1430-1437 |
Keywords |
BWO spectroscopy, pure semiconductors, residual impurities |
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Russian |
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Duplicated as 1714 |
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1712 |
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Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
Title |
Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
Type |
Journal Article |
Year |
1983 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
Volume |
17 |
Issue |
8 |
Pages |
908-913 |
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BWO spectroscopy, pure semiconductors, residual impurities |
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Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках |
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1714 |
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Author |
Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. |
Title |
Об одном способе определения концентрации глубоких примесей в германии |
Type |
Journal Article |
Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
Volume |
17 |
Issue |
10 |
Pages |
1896-1898 |
Keywords |
Ge, deep impurities |
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1762 |
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