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| Author | Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V. | ||||
| Title | Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system | Type | Conference Article | ||
| Year | 2017 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
| Volume | 132 | Issue | 2 | Pages | 2 |
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| Abstract | Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor†in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched†in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1116 | ||
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| Author | Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Room temperature silicon detector for IR range coated with Ag2S quantum dots | Type | Journal Article | ||
| Year | 2019 | Publication | Phys. Status Solidi RRL | Abbreviated Journal | Phys. Status Solidi RRL |
| Volume | 13 | Issue | 9 | Pages | 1900187-(1-6) |
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| Abstract | For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics. | ||||
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| ISSN | 1862-6254 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1149 | |||
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| Author | Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. | ||||
| Title | Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder | Type | Miscellaneous | ||
| Year | 2019 | Publication | arXiv | Abbreviated Journal | arXiv |
| Volume | Issue | Pages | 1-10 | ||
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| Abstract | We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of ∼1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1278 | |||
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| Author | Goltsman, G. N. | ||||
| Title | Submillimeter superconducting receivers for astronomy, atmospheric studies and other applications | Type | Abstract | ||
| Year | 2006 | Publication | 31nd IRMW / 14th ICTE | Abbreviated Journal | 31nd IRMW / 14th ICTE |
| Volume | Issue | Pages | 177 | ||
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| Area | Expedition | Conference | Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1443 | |||
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| Author | Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N. | ||||
| Title | Receiver measurements of pHEB beam lead mixers on 3-μm silicon | Type | Conference Article | ||
| Year | 2005 | Publication | Proc. 30th IRMMW / 13th THz | Abbreviated Journal | Proc. 30th IRMMW / 13th THz |
| Volume | Issue | Pages | 271-272 | ||
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| Abstract | We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz. | ||||
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| Area | Expedition | Conference | Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1460 | |||
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| Author | Goltsman, G. | ||||
| Title | Simple method for stabilizing power of submillimetric spectrometer | Type | Journal Article | ||
| Year | 1972 | Publication | Pribory i Tekhnika Eksperimenta | Abbreviated Journal | Pribory i Tekhnika Eksperimenta |
| Volume | Issue | 1 | Pages | 136 | |
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| Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1738 | |||
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| Author | Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N. | ||||
| Title | A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure | Type | Journal Article | ||
| Year | 2005 | Publication | Semicond. | Abbreviated Journal | Semicond. |
| Volume | 39 | Issue | 9 | Pages | 1082-1086 |
| Keywords |
2D electron gas, AlGaAs/GaAs heterostructures, mixers | ||||
| Abstract | Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements. | ||||
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| ISSN | 1063-7826 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1463 | |||
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| Author | Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. | ||||
| Title | Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range | Type | Conference Article | ||
| Year | 1997 | Publication | Proc. 4-th Int. Semicond. Device Research Symp. | Abbreviated Journal | Proc. 4-th Int. Semicond. Device Research Symp. |
| Volume | Issue | Pages | 55-58 | ||
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2DEG, AlGaAs/GaAs heterostructures | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1602 | |||
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| Author | Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. | ||||
| Title | Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid | Type | Journal Article | ||
| Year | 2020 | Publication | J. Luminescence | Abbreviated Journal | J. Luminescence |
| Volume | 220 | Issue | Pages | 117008 (1 to 7) | |
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Ag2S QD, quantum dots | ||||
| Abstract | The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA. | ||||
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| ISSN | 0022-2313 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1267 | |||
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| Author | Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Room temperature silicon detector for IR range coated with Ag2S quantum dots | Type | Conference Article | ||
| Year | 2019 | Publication | IRMMW-THz | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords |
Ag2S quantum dots | ||||
| Abstract | A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications. | ||||
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| ISSN | 2162-2035 | ISBN | 978-1-5386-8285-2 | Medium | |
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| Notes | Approved | no | |||
| Call Number | 8874267 | Serial | 1286 | ||
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| Author | Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. | ||||
| Title | Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements | Type | Journal Article | ||
| Year | 2011 | Publication | Semicond. Sci. Technol. | Abbreviated Journal | Semicond. Sci. Technol. |
| Volume | 26 | Issue | 2 | Pages | 025013 |
| Keywords |
AlGaAs/GaAs heterojunctions | ||||
| Abstract | We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas. | ||||
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| ISSN | 0268-1242 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1215 | |||
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| Author | Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. | ||||
| Title | Relaxation of the resistive superconducting state in boron-doped diamond films | Type | Journal Article | ||
| Year | 2016 | Publication | Phys. Rev. B | Abbreviated Journal | Phys. Rev. B |
| Volume | 93 | Issue | 6 | Pages | 064506 |
| Keywords |
boron-doped diamond films, resistive superconducting state, relaxation time | ||||
| Abstract | We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2469-9950 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1167 | |||
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| Author | Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. | ||||
| Title | Optimization of contra-directional coupler based on silicon nitride Bragg rib waveguide | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1124 | Issue | Pages | 051048 | |
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Bragg waveguide, Si3N4 | ||||
| Abstract | We report on the development and fabrication of a contra-directional coupler based on the Bragg waveguide on Si3N4 platform. Transmitted and reflected by the contra-directional coupler spectra were measured. The reflected spectra exactly matches the one notched by the main channel of the coupler. Losses are about 3dB, coupling to the directing branch of the coupler is practically lossless. FWHM of the transmitted (reflected) spectra is 3.46 nm. | ||||
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| ISSN | 1742-6588 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1195 | |||
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| Author | Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Goltsman, G. | ||||
| Title | Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform | Type | Conference Article | ||
| Year | 2017 | Publication | Proc. SPBOPEN | Abbreviated Journal | Proc. SPBOPEN |
| Volume | Issue | Pages | 449-450 | ||
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Bragg waveguides | ||||
| Abstract | We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. Transmission spectra of the integrated notch filter has been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. | ||||
| Address | St. Petersburg, Russia | ||||
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| Notes | Duplicated as 1141 | Approved | no | ||
| Call Number | Serial | 1257 | |||
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| Author | Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G. | ||||
| Title | CMOS compatible nanoantenna-nanodiamond integration | Type | Conference Article | ||
| Year | 2019 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1410 | Issue | Pages | 012180 | |
| Keywords |
bull-eye antenna, hyperbolic metamaterials, NV-centers | ||||
| Abstract | Here we demonstrate CMOS compatible method to deterministically produce nanoantenna with nanodiamonds systems on example of bull-eye antenna on top of on hyperbolic metamaterials. We study the statistics of the placement of nanodiamonds and measure the fluorescence lifetime and the second-order correlation function of NV-centers inside nanodiamonds. | ||||
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| ISSN | 1742-6588 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1182 | |||
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| Author | Iomdina, E. N.; Seliverstov, S.; Sianosyan, A.; Teplyakova, K.; Rusova, A.; Goltsman, G. | ||||
| Title | The prospects of using the radiation for the assessment of corneal and scleral hydration | Type | Abstract | ||
| Year | 2016 | Publication | Acta Ophthalmol. | Abbreviated Journal | Acta Ophthalmol. |
| Volume | 94 | Issue | Pages | ||
| Keywords |
BWO, avalanche transit‐time diode, medicine, biology | ||||
| Abstract | Purpose An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells – the cornea and the sclera. THz systems creating images in reflected beams are likely to become ideal instruments of noninvasive testing of corneal and scleral hydration degree as THz radiation is highly sensitive to water content. The paper aims at studying the transmittance and reflectance spectra of the cornea and the sclera of rabbit and human eyes, as well as those of the whole rabbit eye, in the frequency range of 0.13–0.32 THz. Methods The experiments were carried out on 3 corneas and 3 rabbit scleras, 2 whole rabbit eyes, and 3 human healthy adult scleras using a specially developed THz system based on reliable and easy‐to‐use continuous wave sources: a backward‐wave oscillator and an avalanche transit‐time diode. Results The transmittance spectra of the cornea and the sclera and the dependence of the reflection coefficient of these tissues in THz range on water percentage content were determined. Comparison of the rabbit cornea hydrated from 73.2% to 76.3% concentration by mass demonstrated an approximately linear relationship between THz reflectivity and water concentration. The decrease of free water concentration by 1% leads to a drop of the reflectance coefficient by 13%. The parameters studied displayed noticeable differences between the sclera and the cornea of rabbits and between rabbit sclera and human sclera. Conclusions Preliminary results demonstrate that the proposed technique, based on continuous THz radiation, may be used to create a device for noninvasive testing of corneal and scleral hydration, which has good potential of wide‐scale practical application. The work was supported by the Russian Foundation of Basic Research (grant No.15‐29‐03843) |
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| ISSN | 1755375X | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1333 | |||
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| Author | Iomdina, E. N.; Goltsman, G. N.; Seliverstov, S. V.; Sianosyan, A. A.; Teplyakova, K. O.; Rusova, A. A. | ||||
| Title | Study of transmittance and reflectance spectra of the cornea and the sclera in the THz frequency range | Type | Journal Article | ||
| Year | 2016 | Publication | J. Biomed. Opt. | Abbreviated Journal | J. Biomed. Opt. |
| Volume | 21 | Issue | 9 | Pages | 97002 (1 to 5) |
| Keywords |
BWO, IMPATT diode, Schottky diode, medicine, animals, cornea, physiology, humans, rabbits, sclera diagnostic imaging, physiology | ||||
| Abstract | An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells: the cornea and the sclera. Adequate control of corneal and scleral hydration is very important for early diagnosis of a variety of eye diseases, stating indications for and contraindications against keratorefractive surgeries and the choice of contact lens correction solutions. THz systems of creating images in reflected beams are likely to become ideal instruments of noninvasive control of corneal and scleral hydration degrees. This paper reports on the results of a study involving transmittance and reflectance spectra for the cornea and the sclera of rabbit and human eyes, as well as those of the rabbit eye, in the frequency range of 0.13 to 0.32 THz. The dependence of the reflectance coefficient of these tissues on water mass percentage content was determined. The experiments were performed on three corneas, three rabbit scleras, two rabbit eyes, and three human scleras. The preliminary results demonstrate that the proposed technique, based on the use of a continuous THz radiation, may be utilized to create a device for noninvasive control of corneal and scleral hydration, which has clear potential of broad practical application. | ||||
| Address | Moscow State Pedagogical University, Department of Physics, 29 Malaya Pirogovskaya Street, Moscow 119435, Russia | ||||
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| Language | English | Summary Language | Original Title | ||
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| ISSN | 1083-3668 | ISBN | Medium | ||
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| Notes | PMID:27626901 | Approved | no | ||
| Call Number | Serial | 1335 | |||
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| Author | Iomdina, E. N.; Seliverstov, S. V.; Sianosyan, A. A.; Teplyakova, K. O.; Rusova, A. A.; Goltsman, G. N. | ||||
| Title | Terahertz scanning for evaluation of corneal and scleral hydration | Type | Journal Article | ||
| Year | 2018 | Publication | Sovremennye tehnologii v medicine | Abbreviated Journal | STM |
| Volume | 10 | Issue | 4 | Pages | 143-149 |
| Keywords |
BWO; Golay cell; medicine; cornea; sclera; THz radiation; corneal hydration; backward-wave oscillator; avalanche transit-time diode; IMPATT diode | ||||
| Abstract | The aim of the investigation was to study the prospects of using continuous THz scanning of the cornea and the sclera to determine water concentration in these tissues and on the basis of the obtained data to develop the experimental installation for monitoring corneal and scleral hydration degree.Materials and Methods. To evaluate corneal and scleral transmittance and reflectance spectra in the THz range, the developed experimental installations were used to study 3 rabbit corneas and 3 scleras, 2 whole rabbit eyes, and 3 human scleras. Besides, two rabbit eyes were studied in vivo prior to keratorefractive surgery as well as 10 and 21 days following the surgery (LASIK).Results. There have been created novel experimental installations enabling in vitro evaluation of frequency dependence of corneal and scleral transmittance coefficients and reflectance coefficients on water percentage in the THz range. Decrease in corneal water content by 1% was found to lead to reliably established decrease in the reflected signal by 13%. The reflectance spectrum of the whole rabbit eye was measured in the range of 0.13–0.32 THz. The study revealed the differences between the indices of rabbit cornea and sclera, as well as rabbit and human sclera. There was developed a laboratory model of the installation for in vivo evaluation of corneal and scleral hydration using THz radiation.Conclusion. The preliminary findings show that the proposed technique based on the use of continuous THz radiation can be employed to create a device for noninvasive control of corneal and scleral hydration. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1315 | |||
| Permanent link to this record | |||||
| Author | Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G. | ||||
| Title | Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors | Type | Journal Article | ||
| Year | 2018 | Publication | Phys. Status Solidi B | Abbreviated Journal | Phys. Status Solidi B |
| Volume | 255 | Issue | 1 | Pages | 1700227 (1 to 6) |
| Keywords |
carbon nanotube schottky diodes, CNT | ||||
| Abstract | Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz. | ||||
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| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0370-1972 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1321 | |||
| Permanent link to this record | |||||
| Author | Titova, N.; Gayduchenko, I. A.; Moskotin, M. V.; Fedorov, G. F.; Goltsman, G. N. | ||||
| Title | Carbon nanotube based terahertz radiation detectors | Type | Conference Article | ||
| Year | 2019 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1410 | Issue | Pages | 012208 (1 to 5) | |
| Keywords |
carbon nanotubes, CNT | ||||
| Abstract | In this paper, we study terahertz detectors based on single quasimetallic carbon nanotubes (CNT) with asymmetric contacts and different metal pairs. We demonstrate that, depending on the contact metallization of the device, various detection mechanisms are manifested. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1270 | |||
| Permanent link to this record | |||||
| Author | Gayduchenko, I. A.; Fedorov, G. E.; Stepanova, T. S.; Titova, N.; Voronov, B. M.; But, D.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N. | ||||
| Title | Asymmetric devices based on carbon nanotubes as detectors of sub-THz radiation | Type | Conference Article | ||
| Year | 2016 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 741 | Issue | Pages | 012143 (1 to 6) | |
| Keywords |
carbon nanotubes, CNT | ||||
| Abstract | Demand for efficient terahertz (THz) radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. In this work, we systematically investigate the response of asymmetric carbon nanodevices to sub-terahertz radiation using different sensing elements: from dense carbon nanotube (CNT) network to individual CNT. We conclude that the detectors based on individual CNTs both semiconducting and quasi-metallic demonstrate much stronger response in sub-THz region than detectors based on disordered CNT networks at room temperature. We also demonstrate the possibility of using asymmetric detectors based on CNT for imaging in the THz range at room temperature. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. | ||||
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| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1336 | |||
| Permanent link to this record | |||||
| Author | Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G. | ||||
| Title | Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation | Type | Abstract | ||
| Year | 2014 | Publication | Proc. 25th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 25th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 71 | ||
| Keywords |
carbon nanotubes, CNT | ||||
| Abstract | This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1361 | |||
| Permanent link to this record | |||||
| Author | Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. | ||||
| Title | On chip carbon nanotube tunneling spectroscopy | Type | Journal Article | ||
| Year | 2020 | Publication | Fullerenes, Nanotubes and Carbon Nanostructures | Abbreviated Journal | |
| Volume | 28 | Issue | 1 | Pages | 50-53 |
| Keywords |
carbon nanotubes, CNT, scanning tunneling microscope, STM | ||||
| Abstract | We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Taylor & Francis | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | doi:10.1080/1536383X.2019.1671365 | Serial | 1269 | ||
| Permanent link to this record | |||||
| Author | Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. | ||||
| Title | Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation | Type | Journal Article | ||
| Year | 2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 18 | Pages | 181121 (1 to 5) |
| Keywords |
carbon nanotubes, CNT, THz radiation, SiO2 substrate | ||||
| Abstract | We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. | ||||
| Address | |||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1171 | |||
| Permanent link to this record | |||||
| Author | Pyatkov, F.; Khasminskaya, S.; Kovalyuk, V.; Hennrich, F.; Kappes, M. M.; Goltsman, G. N.; Pernice, W. H. P.; Krupke, R. | ||||
| Title | Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers | Type | Journal Article | ||
| Year | 2017 | Publication | Beilstein J. Nanotechnol. | Abbreviated Journal | Beilstein J. Nanotechnol. |
| Volume | 8 | Issue | Pages | 38-44 | |
| Keywords |
carbon nanotubes; CNT; infrared; integrated optics devices; nanomaterials | ||||
| Abstract | Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources. | ||||
| Address | Department of Materials and Earth Sciences, Technische Universitat Darmstadt, Darmstadt 64287, Germany | ||||
| Corporate Author | Thesis | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2190-4286 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:28144563; PMCID:PMC5238692 | Approved | no | ||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1109 | ||
| Permanent link to this record | |||||
| Author | Zubkova, E.; Golikov, A.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. | ||||
| Title | CWDM demultiplexer using anti-reflection, contra-directional couplers based on silicon nitride rib waveguide | Type | Conference Article | ||
| Year | 2019 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1410 | Issue | Pages | 012179 | |
| Keywords |
coarse wavelength-division multiplexing, Si3N4 rib waveguide | ||||
| Abstract | We report on the development and fabrication of a 9-channel coarse wavelength-division multiplexing for telecommunication wavelengths (1550 nm) using anti-reflection contra-directional couplers, based on silicon nitride (Si3N4) rib waveguide. The transmitted and reflected spectrum in each channel of the demultiplexer were measured. The average full width at half maximum of the transmitted (reflected) spectra is about 3 nm. | ||||
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| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1183 | |||
| Permanent link to this record | |||||
| Author | Tikhonov, V. V.; Boyarskii, D. A.; Polyakova, O. N.; Dzardanov, A. L.; Goltsman, G. N. | ||||
| Title | Radiophysical and dielectric properties of ore minerals in 12--145 GHz frequency range | Type | Journal Article | ||
| Year | 2010 | Publication | PIER B | Abbreviated Journal | PIER B |
| Volume | 25 | Issue | Pages | 349-367 | |
| Keywords |
complex permittivity, ore minerals | ||||
| Abstract | The paper discusses a retrieval technique of complex permittivity of ore minerals in frequency ranges of 12--38 GHz and 77--145 GHz. The method is based on measuring frequency dependencies of transmissivity and reflectivity of plate-parallel mineral samples. In the 12--38 GHz range, the measurements were conducted using a panoramic standing wave ratio and attenuation meter. In the 77--145 GHz range, frequency dependencies of transmissivity and reflectivity were obtained using millimeter-band spectrometer with backward-wave oscillators. The real and imaginary parts of complex permittivity of a mineral were determined solving an equation system for frequency dependencies of transmissivity and reflectivity of an absorbing layer located between two dielectric media. In the course of the work, minerals that are primary ores in iron, zinc, copper and titanium mining were investigated: magnetite, hematite, sphalerite, chalcopyrite, pyrite, and ilmenite. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 639 | ||
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| Author | Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. | ||||
| Title | Towards to the development of THz detectors based on carbon nanostructures | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1092 | Issue | Pages | 012039 (1 to 4) | |
| Keywords |
CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors | ||||
| Abstract | Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1302 | |||
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| Author | Gershenzon, Ye. M.; Goltsman, G. N.; Yelantyev, A. I.; Petrova, Ye. B.; Ptitsina, N. G.; Filatov, V. S. | ||||
| Title | Lecture demonstrations of properties of superconductors and liquid helium | Type | Journal Article | ||
| Year | 1987 | Publication | USSR Rept Phys. Math. JPRS UPM | Abbreviated Journal | USSR Rept Phys. Math. JPRS UPM |
| Volume | 24 | Issue | 7 | Pages | 51 |
| Keywords |
demonstrations, lections | ||||
| Abstract | New demonstrations for low temperature physics courses are described. Two transparent Dewar vacuum flasks fitting one inside the other with the external flask for nitrogen and the internal flask for helium are used. The helium temperature can be regulated in the 4.2 to 1.6 K range and the effects of reducing helium to the superfluid state at 2.17 K can be shown: boiling abruptly stops and superfluid flow appears. In order to show the electric and magnetic characteristics of superconductivity, a superconducting NbTi solenoid containing nonsuperconducting wire and germanium and superconducting Nb materials with different critical temperatures is placed in the helium refrigerant vessel. The fall of the resistance at the critical temperatures can be shown. In order to show magnetic field and superconductive current flow properties a shunt of superconductive material is connected in parallel to the coil and is enclosed in a teflon container with a heater which can vary its temperature. When it is heated and not superconductive, magnetic field effects can be demonstrated and when it is unheated and superconducting a continuous current can be demonstrated. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1704 | |||
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| Author | Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector | Type | Journal Article | ||
| Year | 2020 | Publication | Nanomaterials (Basel) | Abbreviated Journal | Nanomaterials (Basel) |
| Volume | 10 | Issue | 5 | Pages | 1-12 |
| Keywords |
detector; quantum dots; short-wave infrared range; silicon | ||||
| Abstract | In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. | ||||
| Address | Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2079-4991 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:32365694; PMCID:PMC7712218 | Approved | no | ||
| Call Number | Serial | 1151 | |||
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| Author | Semenov, A. V.; Devyatov, I. A.; Korneev, A. A.; Smirnov, K. V.; Goltsman, G. N.; Melnikov, A. P. | ||||
| Title | Derivation of expression for thermodynamic potential of “dirty” superconductor | Type | Journal Article | ||
| Year | 2012 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
| Volume | Issue | 4 | Pages | ||
| Keywords |
dirty superconductor, Usadel theory, thermodynamic potential | ||||
| Abstract | We derive a formula for thermodynamic potential of dirty superconductor which express it via isotropic quasiclassical Green functions of Usadel theory. Our result allows unify description of dynamic processes and fluctuations in superconducting nano-electronic devices. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | 7 pages | Approved | no | ||
| Call Number | Serial | 1824 | |||
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| Author | Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. | ||||
| Title | The electron-phonon relaxation time in thin superconducting titanium nitride films | Type | Journal Article | ||
| Year | 2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 25 | Pages | 252602 (1 to 4) |
| Keywords |
disordered TiN films, electron-phonon relaxation time | ||||
| Abstract | We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors. The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 941 | ||
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| Author | Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. | ||||
| Title | Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform | Type | Conference Article | ||
| Year | 2019 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 220 | Issue | Pages | 03012 | |
| Keywords |
e-beam lithography, Si3N4 | ||||
| Abstract | In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1189 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M. | ||||
| Title | Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it | Type | Conference Article | ||
| Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 42 | Issue | 6 | Pages | 1142-1148 |
| Keywords |
energy spectrum, Ge, magnetic field | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1722 | |||
| Permanent link to this record | |||||
| Author | Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. | ||||
| Title | Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder | Type | Journal Article | ||
| Year | 2019 | Publication | Phys. Rev. Applied | Abbreviated Journal | Phys. Rev. Applied |
| Volume | 12 | Issue | 5 | Pages | 054001 |
| Keywords |
epitaxial TiN films | ||||
| Abstract | We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films. | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2331-7019 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1166 | |||
| Permanent link to this record | |||||
| Author | Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. | ||||
| Title | Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1124 | Issue | Pages | 051050 (1 to 5) | |
| Keywords |
field-effect transistor, FET, carbon nanotube, CNT | ||||
| Abstract | In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1301 | |||
| Permanent link to this record | |||||
| Author | Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. | ||||
| Title | Response of carbon nanotube film transistor to the THz radiation | Type | Conference Article | ||
| Year | 2018 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 195 | Issue | Pages | 05012 (1 to 2) | |
| Keywords |
field-effect transistor, FET, carbon nanotube, CNT | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1317 | |||
| Permanent link to this record | |||||
| Author | Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. | ||||
| Title | Graphene-layer and graphene-nanoribbon FETs as THz detectors | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1124 | Issue | Pages | 051054 | |
| Keywords |
field-effect transistor, FET, monolayer graphene, graphene nanoribbons | ||||
| Abstract | We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1300 | |||
| Permanent link to this record | |||||
| Author | Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. | ||||
| Title | Tunnel field-effect transistors for sensitive terahertz detection | Type | Journal Article | ||
| Year | 2021 | Publication | Nat. Commun. | Abbreviated Journal | Nat. Commun. |
| Volume | 12 | Issue | 1 | Pages | 543 |
| Keywords |
field-effect transistors, bilayer graphene, BLG | ||||
| Abstract | The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. | ||||
| Address | Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | English | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2041-1723 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:33483488; PMCID:PMC7822863 | Approved | no | ||
| Call Number | Serial | 1261 | |||
| Permanent link to this record | |||||
| Author | Kuzin, A.; Kovalyuk, V.; Golikov, A.; Prokhodtsov, A.; Marakhin, A.; Ferrari, S.; Pernice, W.; Gippius, N.; Goltsman, G. | ||||
| Title | Efficiency of focusing grating couplers versus taper length and angle | Type | Conference Article | ||
| Year | 2019 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1410 | Issue | Pages | 012181 | |
| Keywords |
focusing grating coupler | ||||
| Abstract | Here we experimentally studied dependence of a focusing grating coupler efficiency versus taper length and angle on silicon nitride platform. As a result, we obtained a dependence for the efficiency of a focusing grating coupler on the parameters of the taper length and angle. | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1184 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. | ||||
| Title | Investigation of excited donor states in GaAs | Type | Journal Article | ||
| Year | 1974 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
| Volume | 7 | Issue | 10 | Pages | 1248-1250 |
| Keywords |
GaAs, excited donor states | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1733 | |||
| Permanent link to this record | |||||
| Author | Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. | ||||
| Title | Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations | Type | Journal Article | ||
| Year | 2019 | Publication | AIP Advances | Abbreviated Journal | AIP Advances |
| Volume | 9 | Issue | 10 | Pages | 105220 |
| Keywords |
GaAs/AlGaAs superlattice, SL, NbN HEB | ||||
| Abstract | Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level. | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2158-3226 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1274 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. | ||||
| Title | Germanium hot-electron narrow-band detector | Type | Journal Article | ||
| Year | 1971 | Publication | Sov. Radio Engineering And Electronic Physics | Abbreviated Journal | Sov. Radio Engineering And Electronic Physics |
| Volume | 16 | Issue | 8 | Pages | 1346 |
| Keywords |
Ge HEB detectors | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1741 | |||
| Permanent link to this record | |||||
| Author | Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. | ||||
| Title | Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves | Type | Conference Article | ||
| Year | 1986 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 50 | Issue | Pages | 280-281 | |
| Keywords |
Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0367-6755 | ISBN | Medium | ||
| Area | Expedition | Conference | 3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985 | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1708 | |||
| Permanent link to this record | |||||
| Author | Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. | ||||
| Title | Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure | Type | Journal Article | ||
| Year | 1989 | Publication | Sov. Phys. and Technics of Semiconductors | Abbreviated Journal | Sov. Phys. and Technics of Semiconductors |
| Volume | 23 | Issue | 8 | Pages | 843-846 |
| Keywords |
Ge, crystallography | ||||
| Abstract | Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
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| Area | Expedition | Conference | |||
| Notes | Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge | Approved | no | ||
| Call Number | Serial | 1692 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. | ||||
| Title | Investigation of population and ionization of donor excited states in Ge | Type | Conference Article | ||
| Year | 1976 | Publication | Physics of Semiconductors | Abbreviated Journal | Physics of Semiconductors |
| Volume | Issue | Pages | 631-634 | ||
| Keywords |
Ge, donor excited states | ||||
| Abstract | |||||
| Address | Amsterdam | ||||
| Corporate Author | Thesis | ||||
| Publisher | North-Holland Publishing Co. | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1732 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Goltsman, G. N. | ||||
| Title | Zeeman effect in excited-states of donors in germanium | Type | Journal Article | ||
| Year | 1972 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
| Volume | 6 | Issue | 3 | Pages | 509 |
| Keywords |
Ge, donors, Zeeman effect | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1737 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. | ||||
| Title | Population of excited-states of small admixtures in germanium | Type | Conference Article | ||
| Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 42 | Issue | 6 | Pages | 1154-1159 |
| Keywords |
Ge, excited states, admixtures | ||||
| Abstract | |||||
| Address | |||||
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| Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1723 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
| Title | Kinetics of submillimeter impurity and exciton photoconduction in Ge | Type | Journal Article | ||
| Year | 1982 | Publication | Optics and Spectroscopy | Abbreviated Journal | Optics and Spectroscopy |
| Volume | 52 | Issue | 4 | Pages | 454-455 |
| Keywords |
Ge, exciton photoconduction | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
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| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1715 | |||
| Permanent link to this record | |||||
| Author | Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. | ||||
| Title | Capture of free holes by charged acceptors in uniaxially deformed Ge | Type | Journal Article | ||
| Year | 1988 | Publication | Fizika i Tekhnika Poluprovodnikov | Abbreviated Journal | Fizika i Tekhnika Poluprovodnikov |
| Volume | 22 | Issue | 3 | Pages | 540-543 |
| Keywords |
Ge, free holes, capture | ||||
| Abstract | Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
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| Area | Expedition | Conference | |||
| Notes | Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge | Approved | no | ||
| Call Number | Serial | 1698 | |||
| Permanent link to this record | |||||
| Author | Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. | ||||
| Title | Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors | Type | Journal Article | ||
| Year | 2018 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 112 | Issue | 14 | Pages | 141101 (1 to 5) |
| Keywords |
graphene field effect transistors, FET | ||||
| Abstract | Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs. D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions. |
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| Publisher | Place of Publication | Editor | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1309 | |||
| Permanent link to this record | |||||
| Author | Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. | ||||
| Title | Response of graphene based gated nanodevices exposed to THz radiation | Type | Conference Article | ||
| Year | 2015 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
| Volume | 103 | Issue | Pages | 10003 (1 to 2) | |
| Keywords |
graphene field-effect transistor, FET | ||||
| Abstract | In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. | ||||
| Address | |||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1350 | |||
| Permanent link to this record | |||||
| Author | Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. | ||||
| Title | The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts | Type | Conference Article | ||
| Year | 2018 | Publication | Materials Today: Proc. | Abbreviated Journal | Materials Today: Proc. |
| Volume | 5 | Issue | 13 | Pages | 27301-27306 |
| Keywords |
graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor | ||||
| Abstract | We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2214-7853 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1316 | |||
| Permanent link to this record | |||||
| Author | Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. | ||||
| Title | Graphene-based lateral Schottky diodes for detecting terahertz radiation | Type | Conference Article | ||
| Year | 2018 | Publication | Proc. Optical Sensing and Detection V | Abbreviated Journal | Proc. Optical Sensing and Detection V |
| Volume | 10680 | Issue | Pages | 30-39 | |
| Keywords |
graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves | ||||
| Abstract | Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. | ||||
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| Corporate Author | Thesis | ||||
| Publisher | Spie | Place of Publication | Editor | Berghmans, F.; Mignani, A.G. | |
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | 10.1117/12.2307020 | Serial | 1306 | ||
| Permanent link to this record | |||||
| Author | Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. | ||||
| Title | Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency | Type | Conference Article | ||
| Year | 2019 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 220 | Issue | Pages | 02009 | |
| Keywords |
grating coupler, SiO2 | ||||
| Abstract | The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1188 | |||
| Permanent link to this record | |||||
| Author | Elmanov, I.; Sardi, F.; Xia, K.; Kornher, T.; Kovalyuk, V.; Prokhodtsov, A.; An, P.; Kuzin, A.; Elmanova, A.; Goltsman, G.; Kolesov, R. | ||||
| Title | Development of focusing grating couplers for lithium niobate on insulator platform | Type | Conference Article | ||
| Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1695 | Issue | Pages | 012127 | |
| Keywords |
grating couplers, lithium niobat | ||||
| Abstract | In this paper, we fabricate and experimentally study focusing grating couplers for lithium niobate on an insulator photonic platform. The transmittance of a waveguide equipped with in- and out-couplers with respect to the grating period is measured with and without silicon dioxide cladding applied. Our results show the influence of silicon dioxide cladding on the efficiency and the central wavelength of grating couplers and can be used to improve grating coupling efficiency. Our study is supported by numerical simulations. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1180 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Limiting characteristic of fast superconducting bolometers | Type | Journal Article | ||
| Year | 1989 | Publication | Sov. Phys.-Tech. Phys. | Abbreviated Journal | Sov. Phys.-Tech. Phys. |
| Volume | 34 | Issue | Pages | 195-199 | |
| Keywords |
HEB | ||||
| Abstract | Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. | ||||
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| Notes | О предельных характеристиках быстродействующих серхпроводниковых болометров | Approved | no | ||
| Call Number | Serial | 237 | |||
| Permanent link to this record | |||||
| Author | Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N. | ||||
| Title | Ultrafast superconducting bolometer receivers for terahertz applications | Type | Abstract | ||
| Year | 2009 | Publication | Proc. PIERS | Abbreviated Journal | Proc. PIERS |
| Volume | Issue | Pages | 867 | ||
| Keywords |
HEB | ||||
| Abstract | The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe. | ||||
| Address | Moscow, Russia | ||||
| Corporate Author | Thesis | ||||
| Publisher | The Electromagnetics Academy | Place of Publication | 777 Concord Avenue, Suite 207 Cambridge, MA 02138 | Editor | |
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1559-9450 | ISBN | 978-1-934142-09-7 | Medium | |
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ sasha @ ozhegovultrafast | Serial | 1022 | ||
| Permanent link to this record | |||||
| Author | Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. | ||||
| Title | Temperature dependence of superconducting hot electron bolometers | Type | Conference Article | ||
| Year | 2013 | Publication | Not published results: 24th international symposium on space terahertz technology | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords |
HEB | ||||
| Abstract | |||||
| Address | Groningen,The Netherlands | ||||
| Corporate Author | Thesis | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1067 | |||
| Permanent link to this record | |||||
| Author | Shurakov, A.; Lobanov, Y.; Goltsman, G. | ||||
| Title | Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications | Type | Journal Article | ||
| Year | 2015 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 29 | Issue | 2 | Pages | 023001 |
| Keywords |
HEB | ||||
| Abstract | The discovery of hot-electron phenomena in a thin superconducting film in the last century was followed by numerous experimental studies of its appearance in different materials aiming for a better understanding of the phenomena and consequent implementation of terahertz detection systems for practical applications. In contrast to the competitors such as superconductor-insulator-superconductor tunnel junctions and Schottky diodes, the hot electron bolometer (HEB) did not demonstrate any frequency limitation of the detection mechanism. The latter, in conjunction with a decent performance, rapidly made the HEB mixer the most attractive candidate for heterodyne observations at frequencies above 1 THz. The successful operation of practical instruments (the Heinrich Hertz Telescope, the Receiver Lab Telescope, APEX, SOFIA, Hershel) ensures the importance of the HEB technology despite the lack of rigorous theoretical routine for predicting the performance. In this review, we provide a summary of experimental and theoretical studies devoted to understanding the HEB physics, and an overview of various fabrication routes and materials. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0953-2048 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1156 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Limiting characteristics of fast-response superconducting bolometers | Type | Journal Article | ||
| Year | 1989 | Publication | Zhurnal Tekhnicheskoi Fiziki | Abbreviated Journal | Zhurnal Tekhnicheskoi Fiziki |
| Volume | 59 | Issue | 2 | Pages | 11-120 |
| Keywords |
HEB | ||||
| Abstract | Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1696 | |||
| Permanent link to this record | |||||
| Author | Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. | ||||
| Title | Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity | Type | Journal Article | ||
| Year | 2014 | Publication | Laser Phys. Lett. | Abbreviated Journal | |
| Volume | 11 | Issue | 1 | Pages | 015004 (1 to 4) |
| Keywords |
HEB applications, HEB detector applications, short THz pulses detection | ||||
| Abstract | We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1076 | |||
| Permanent link to this record | |||||
| Author | Seliverstov, S.; Maslennikov, S.; Ryabchun, S.; Finkel, M.; Klapwijk, T. M.; Kaurova, N.; Vachtomin, Yu.; Smirnov, K.; Voronov, B.; Goltsman, G. | ||||
| Title | Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer | Type | Journal Article | ||
| Year | 2015 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 25 | Issue | 3 | Pages | 2300304 |
| Keywords |
HEB detector responsivity, HEB model, numerical calculations, numerical model | ||||
| Abstract | We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 953 | |||
| Permanent link to this record | |||||
| Author | Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. | ||||
| Title | Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers | Type | Journal Article | ||
| Year | 2016 | Publication | Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | 109 | Issue | 13 | Pages | 132602 |
| Keywords |
HEB mixer, contacts | ||||
| Abstract | We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1107 | |||
| Permanent link to this record | |||||
| Author | Tretyakov, I. V.; Finkel, M. I.; Ryabchun, S. A.; Kardakova, A. I.; Seliverstov, S. V.; Petrenko, D. V.; Goltsman, G. N. | ||||
| Title | Hot-electron bolometer mixers with in situ contacts | Type | Journal Article | ||
| Year | 2014 | Publication | Radiophys. Quant. Electron. | Abbreviated Journal | Radiophys. Quant. Electron. |
| Volume | 56 | Issue | 8-9 | Pages | 591-598 |
| Keywords |
HEB mixers | ||||
| Abstract | We report on the latest achievements in the development of superconducting hot-electron bolometer (HEB) mixers for terahertz superheterodyne receivers. We consider application ranges of such receivers and requirements for the basic characteristics of the mixers. Main features of the mixers, such as noise temperature, gain bandwidth, noise bandwidth, and required local-oscillator power, have been improved significantly over the past few years due to intense research work, both in terms of the element fabrication quality and in terms of understanding of the physics of the processes occurring in the HEB mixers. Contacts between the superconducting bridge and the planar antenna play a key role in the mixer operation. Improvement of the quality of the contacts leads simultaneously to a decrease in the noise temperature and an increase in the gain bandwidth of a mixer. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0033-8443 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1170 | |||
| Permanent link to this record | |||||
| Author | Kollberg, Erik L.; Gershenzon, E.; Goltsman, G.; Yngvesson, K. S. | ||||
| Title | Hot electron mixers, the potential competition | Type | Conference Article | ||
| Year | 1992 | Publication | Proc. ESA Symp. on Photon Detectors for Space Instrumentation | Abbreviated Journal | Proc. ESA Symp. on Photon Detectors for Space Instrumentation |
| Volume | Issue | Pages | 201-206 | ||
| Keywords |
HEB mixers | ||||
| Abstract | There is an urgent need in radio astronomy for low noise heterodyne receivers for frequencies above about 500 GHz. It is not certain that mixers based on superconducting quasiparticle tunnelling (SIS mixers) may turn out to be the answer to this need. In order to try to find an alternative way for realizing low noise heterodyne receivers for submillimeter waves, so called hot electron bolometric effects for mixing are now being investigated. Two basically different approaches are tried, one based on semiconductors and one on superconductors. Both methods are briefly discussed in this overview paper. | ||||
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| Area | Expedition | Conference | ESA Symposium on Photon Detectors for Space Instrumentation | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1667 | |||
| Permanent link to this record | |||||
| Author | Kawamura, J.; Hunter, T. R.; Tong, C. Y. E.; Blundell, R.; Papa, D. C.; Patt, F.; Peters, W.; Wilson, T.; Henkel, C.; Goltsman, G.; Gershenzon, E. | ||||
| Title | Ground-based terahertz CO spectroscopy towards Orion | Type | Journal Article | ||
| Year | 2002 | Publication | A&A | Abbreviated Journal | A&A |
| Volume | 394 | Issue | 1 | Pages | 271-274 |
| Keywords |
HEB mixers, applications | ||||
| Abstract | Using a superconductive hot-electron bolometer heterodyne receiver on the 10-m Heinrich Hertz Telescope on Mount Graham, Arizona, we have obtained velocity-resolved 1.037 THz CO () spectra toward several positions along the Orion Molecular Cloud (OMC-1) ridge. We confirm the general results of prior observations of high-J CO lines that show that the high temperature, , high density molecular gas, , is quite extended, found along a ~ region centered on BN/KL. However, our observations have significantly improved angular resolution, and with a beam size of we are able to spatially and kinematically discriminate the emission originating in the extended quiescent ridge from the very strong and broadened emission originating in the compact molecular outflow. The ridge emission very close to the BN/KL region appears to originate from two distinct clouds along the line of sight with and ≈ . The former component dominates the emission to the south of BN/KL and the latter to the north, with a turnover point coincident with or near BN/KL. Our evidence precludes a simple rotation of the inner ridge and lends support to a model in which there are multiple molecular clouds along the line of sight towards the Orion ridge. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 322 | |||
| Permanent link to this record | |||||
| Author | Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Goltsman, G. N. | ||||
| Title | Fabrication and characterisation of NbN HEB mixers with in situ gold contacts | Type | Conference Article | ||
| Year | 2008 | Publication | Proc. 19th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 19th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 62-67 | ||
| Keywords |
HEB, mixer, NbN, in-situ contacts | ||||
| Abstract | We present our recent results of the fabrication and testing of NbN hot-electron bolometer mixers with in situ gold contacts. An intermediate frequency bandwidth of about 6 GHz has been measured for the mixers made of a 3.5-nm NbN film on a plane Si substrate with in situ gold contacts, compared to 3.5 GHz for devices made of the same film with ex situ gold contacts. The increase in the intermediate frequency bandwidth is attributed to additional diffusion cooling through the improved contacts, which is further supported by the its dependence on the bridge length: intermediate frequency bandwidths of 3.5 GHz and 6 GHz have been measured for devices with lengths of 0.35 μm and 0.16 μm respectively at a local oscillator frequency of 300 GHz near the superconducting transition. At a local oscillator frequency of 2.5 THz the receiver has offered a DSB noise temperature of 950 K. When compared to the previous result of 1300 K obtained at the same local oscillator frequency for devices fabricated with an ex situ route, such a low value of the noise temperature may also be attributed to the improved gold contacts. | ||||
| Address | |||||
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| Publisher | Place of Publication | Groningen, Netherlands | Editor | ||
| Language | Summary Language | Original Title | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 412 | |||
| Permanent link to this record | |||||
| Author | Rasulova, G. K.; Pentin, I. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Khabibullin, R. A.; Klimov, E. A.; Klochkov, A. N.; Goltsman, G. N. | ||||
| Title | Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime | Type | Journal Article | ||
| Year | 2020 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 128 | Issue | 22 | Pages | 224303 (1 to 11) |
| Keywords |
HEB, resonant tunneling diode, RTD | ||||
| Abstract | The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1262 | |||
| Permanent link to this record | |||||
| Author | Goltsman, G. | ||||
| Title | Superconducting NbN hot-electron bolometer mixer, direct detector and single-photon counter: from devices to systems | Type | Report | ||
| Year | 2009 | Publication | 2-nd Int. Conf. EUROFLUX | Abbreviated Journal | 2-nd Int. Conf. EUROFLUX |
| Volume | Issue | Pages | |||
| Keywords |
HEB, SSPD, SNSPD | ||||
| Abstract | |||||
| Address | Avignon, France | ||||
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| Notes | Provided by the SAO/NASA Astrophysics Data System | Approved | no | ||
| Call Number | Serial | 1398 | |||
| Permanent link to this record | |||||
| Author | Lobanov, Y. V.; Vakhtomin, Y. B.; Pentin, I. V.; Rosental, V. A.; Smirnov, K. V.; Goltsman, G. N.; Volkov, O. Y.; Dyuzhikov, I. N.; Galiev, R. R.; Ponomarev, D. S.; Khabibullin, R. A. | ||||
| Title | Time-resolved measurements of light–current characteristic and mode competition in pulsed THz quantum cascade laser | Type | Journal Article | ||
| Year | 2021 | Publication | Optical Engineering | Abbreviated Journal | Optical Engineering |
| Volume | 60 | Issue | 8 | Pages | 1-8 |
| Keywords |
HEB, terahertz pulse generation, terahertz pulse detection, QCL, quantum cascade laser, superconducting hot electron bolometer | ||||
| Abstract | Quantum cascade lasers (QCL) are widely adopted as prominent and easy-to-use solid-state sources of terahertz radiation. Yet some applications require generation and detection of very sharp and narrow terahertz-range pulses with a specific spectral composition. We have studied time-resolved light-current (L–I) characteristics of multimode THz QCL operated with a fast ramp of the injection current. Detection of THz pulses was carried out using an NbN superconducting hot-electron bolometer with the time constant of the order of 1 ns while the laser bias current was swept during a single driving pulse. A nonmonotonic behavior of the L–I characteristic with several visually separated subpeaks was found. This behavior is associated with the mode competition in THz QCL cavity, which we confirm by L–I measurements with use of an external Fabry–Perot interferometer for a discrete mode selection. We also have demonstrated the possibility to control the L–I shape with suppression of one of the subpeaks by simply adjusting the off-axis parabolic mirror for optimal optical alignment for one of the laser modes. The developed technique paves the way for rapid characterization of pulsed THz QCLs for further studies of the possibilities of using this approach in remote sensing. | ||||
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| Publisher | Spie | Place of Publication | Editor | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | 10.1117/1.Oe.60.8.082019 | Serial | 1260 | ||
| Permanent link to this record | |||||
| Author | Korneev, A.; Finkel, M.; Maslennikov, S.; Korneeva, Yu.; Florya, I.; Tarkhov, M.; Elezov, M.; Ryabchun, S.; Tretyakov, I.; Isupova, A.; Voronov, B.; Goltsman, G. | ||||
| Title | Superconducting NbN terahertz detectors and infrared photon counters | Type | Journal Article | ||
| Year | 2010 | Publication | Вестник НГУ. Серия: физ. | Abbreviated Journal | Вестник НГУ. Серия: физ. |
| Volume | 5 | Issue | 4 | Pages | 68-72 |
| Keywords |
HEB; HEB mixer | ||||
| Abstract | We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. Keywords: Hot electron bolometer mixers, infrared single-photon detectors, superconducting device fabrication, superconducting NbN films. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1818-7994 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | УДК 538.9 | Approved | no | ||
| Call Number | RPLAB @ gujma @ | Serial | 708 | ||
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| Author | Elezov, M. S.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. | ||||
| Title | Development of control method for an optimal quantum receiver | Type | Conference Article | ||
| Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1695 | Issue | Pages | 012126 | |
| Keywords |
Helstrom bound, SPD, single photon detector, below quantum limit | ||||
| Abstract | We propose a method for optimal displacement controlling of an optimal quantum receiver for registrations a binary coherent signal. An optimal receiver is able to distinguish between two phase-modulated states of a coherent signal. The optimal receiver controlling method can be used later in practice in various physical implementations of the optimal receiver. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1264 | |||
| Permanent link to this record | |||||
| Author | Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Prospects for using high-temperature superconductors to create electron bolometers | Type | Journal Article | ||
| Year | 1989 | Publication | Pisma v Zhurnal Tekhnicheskoi Fiziki | Abbreviated Journal | Pisma v Zhurnal Tekhnicheskoi Fiziki |
| Volume | 15 | Issue | 14 | Pages | 88-93 |
| Keywords |
HTS HEB | ||||
| Abstract | |||||
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| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0320-0116 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров | Approved | no | ||
| Call Number | Serial | 1693 | |||
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| Author | Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. | ||||
| Title | Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates | Type | Journal Article | ||
| Year | 2021 | Publication | Phys. Rev. Applied | Abbreviated Journal | Phys. Rev. Applied |
| Volume | 15 | Issue | 5 | Pages | 054014 |
| Keywords |
InOx, Au/Ni, NbN films | ||||
| Abstract | We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2331-7019 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1769 | |||
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| Author | Galin, M. A.; Klushin, A. M.; Kurin, V. V.; Seliverstov, S. V.; Finkel, M. I.; Goltsman, G. N.; Müller, F.; Scheller, T.; Semenov, A. D. | ||||
| Title | Towards local oscillators based on arrays of niobium Josephson junctions | Type | Journal Article | ||
| Year | 2015 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 28 | Issue | 5 | Pages | 055002 (1 to 7) |
| Keywords |
Josephson junction local oscillators, JJ LO | ||||
| Abstract | Various applications in the field of terahertz technology are in urgent need of compact, wide-tunable solid-state continuous wave radiation sources with a moderate power. However, satisfactory solutions for the THz frequency range are scarce yet. Here we report on coherent radiation from a large planar array of Josephson junctions (JJs) in the frequency range between 0.1 and 0.3 THz. The external resonator providing the synchronization of JJ array is identified as a straight fragment of a single-strip-line containing the junctions themselves. We demonstrate a prototype of the quasioptical heterodyne receiver with the JJ array as a local oscillator and a hot-electron bolometer mixer. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0953-2048 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1347 | |||
| Permanent link to this record | |||||
| Author | Titova, N; Kardakova, A.; Tovpeko, N; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S.R.; Williams, O. A.; Goltsman, G. N. | ||||
| Title | Superconducting diamond films as perspective material for direct THz detectors | Type | Abstract | ||
| Year | 2017 | Publication | Proc. 28th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 28th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 82 | ||
| Keywords |
KID, HEB, superconducting diamond films, boron-doped diamond films, Al, TiN, Si substrates, NEP | ||||
| Abstract | Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1173 | |||
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| Author | Prokhodtsov, A.; Kovalyuk, V.; An, P.; Golikov, A.; Shakhovoy, R.; Sharoglazova, V.; Udaltsov, A.; Kurochkin, Y.; Goltsman, G. | ||||
| Title | Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation | Type | Conference Article | ||
| Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1695 | Issue | Pages | 012118 | |
| Keywords |
Mach-Zehnder interferometer, MZI | ||||
| Abstract | In this work, we experimentally studied silicon nitride Mach-Zehnder interferometer (MZI) with two directional couplers and 400 ps optical delay line for telecom wavelength 1550 nm. We achieved the extinction ratio in a range of 0.76-13.86 dB and system coupling losses of 28-44 dB, depending on the parameters of directional couplers. The developed interferometer is promising for the use in a compact random number generator for the needs of a fully integrated quantum cryptography system, where compact design, as well as high generation speed, are needed. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1178 | |||
| Permanent link to this record | |||||
| Author | Venediktov, I. O.; Elezov, M. S.; Prokhodtsov, A. I.; Kovalyuk, V. V.; An, P. P.; Golikov, A. D.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. | ||||
| Title | Study of microheater’s phase modulation for on-chip Kennedy receiver | Type | Conference Article | ||
| Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1695 | Issue | Pages | 012117 | |
| Keywords |
Mach-Zehnder interferometers, MZI | ||||
| Abstract | In this work we describe phase modulators for several Mach-Zehnder interferometers (MZI) on silicon nitride platform for telecomm wavelength (1550 nm). We obtained current-voltage and phase-voltage curves for these modulators. MZI are needed for experimental realisation of various quantum receivers that can distinguish weak coherent states of light with extremely low error. Thermo-optical (TO) modulation is ensured by microheaters on one of the arms of MZI, which enables the change of the refractive index of the material with temperature. This approach allows to apply the necessary voltage to the golden microheaters to obtain the required phase change. For the on-chip microheaters we demonstrate the dependence of the phase shift on the voltage applied to our on-chip microheaters. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1179 | |||
| Permanent link to this record | |||||
| Author | Iomdina, E. N.; Seliverstov, S. V.; Teplyakova, K. O.; Jani, E. V.; Pozdniakova, V. V.; Polyakova, O. N.; Goltsman, G. N. | ||||
| Title | Terahertz scanning of the rabbit cornea with experimental UVB-induced damage: in vivo assessment of hydration and its verification | Type | Journal Article | ||
| Year | 2021 | Publication | J. Biomed. Opt. | Abbreviated Journal | J. Biomed. Opt. |
| Volume | 26 | Issue | 4 | Pages | |
| Keywords |
medicine; scheimpflug imaging; UVB; confocal microscopy; cornea; optical coherent tomography; rabbit eyes; terahertz radiation | ||||
| Abstract | SIGNIFICANCE: Water content plays a vital role in the normally functioning visual system; even a minor disruption in the water balance may be harmful. Today, no direct method exists for corneal hydration assessment, while it could be instrumental in early diagnosis and control of a variety of eye diseases. The use of terahertz (THz) radiation, which is highly sensitive to water content, appears to be very promising. AIM: To find out how THz scanning parameters of corneal tissue measured by an experimental setup, specially developed for in vivo contactless estimations of corneal reflectivity coefficient (RC), are related to pathological changes in the cornea caused by B-band ultraviolet (UVB) exposure. APPROACH: The setup was tested on rabbit eyes in vivo. Prior to the course of UVB irradiation and 1, 5, and 30 days after it, a series of examinations of the corneal state was made. At the same time points, corneal hydration was assessed by measuring RC. RESULTS: The obtained data confirmed the negative impact of UVB irradiation course on the intensity of tear production and on the corneal thickness and optical parameters. A significant (1.8 times) increase in RC on the 5th day after the irradiation course, followed by a slight decrease on the 30th day after it was revealed. The RC increase measured 5 days after the UVB irradiation course generally corresponded to the increase (by a factor of 1.3) of tear production. RC increase occurred with the corneal edema, which was manifested by corneal thickening (by 18.2% in the middle area and 17.6% in corneal periphery) and an increased volume of corneal tissue (by 17.6%). CONCLUSIONS: Our results demonstrate that the proposed approach can be used for in vivo contactless estimation of the reflectivity of rabbit cornea in the THz range and, thereby, of cornea hydration. | ||||
| Address | National Research University Higher School of Economics, Moscow Institute of Electronics and Mathema, Russia | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1083-3668 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:33834684; PMCID:PMC8027227 | Approved | no | ||
| Call Number | Serial | 1258 | |||
| Permanent link to this record | |||||
| Author | Tiulina, V.; Iomdina, E.; Goltsman, G.; Seliverstov, S.; Sianosyan, A.; Teplyakova, K.; Rusova, A.; Zaitsev, S.; Zernii, E.; Senin, I. | ||||
| Title | UVB promotes the initiation of uveitic inflammatory and changes in thehydration of the cornea in vivo | Type | Miscellaneous | ||
| Year | 2019 | Publication | FEBS Open Bio | Abbreviated Journal | FEBS Open Bio |
| Volume | 9 | Issue | S1 | Pages | 79 |
| Keywords |
medicine; scheimpflug imaging; UVB; confocal microscopy; cornea; optical coherent tomography; rabbit eyes; terahertz radiation | ||||
| Abstract | Recently, active research has been conducted in the field of terahertz (THz) scanning of human tissues for noninvasive determination of their hydration level, which haves hown high diagnostic efficiency of this technology in various pathological conditions. Recently, we have developed a laboratory model of the facility for monitoring the state of the water balance of the cornea using THz scanning in vivo, which opens up the possibility of applying this approach in ophthalmology. The aim of the work wasto compare the results of the THz scan of the cornea with its clinical changes using the example of an experimental model of the UV induced keratouveitis. Anexperimental study, which included a comprehensive assessment of clinical changes in the cornea of rabbits during keratouveitis induction, revealed a decrease in the stability of the tear film, pathological changes in the corneal epithelium and stroma, as well as its anatomical and optical parameters. Comparison of data obtained in the THz scan of the cornea with tears production, optical coherence tomography and confocal microscopy showed their consistency in all observation periods, which allows us to conclude that the developed laboratory setup works and the feasibility of further research to promote the corneal hydration evaluation technology in clinical practice. Acknowledgements: Research was funded by the RSF, grant number 161500255. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2211-5463 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Poster P-01-040 | Approved | no | ||
| Call Number | Serial | 1276 | |||
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| Author | Baubert, J.; Salez, M.; Delorme, Y.; Pons, P.; Goltsman, G.; Merkel, H.; Leconte, B. | ||||
| Title | Membrane-based HEB mixer for THz applications | Type | Conference Article | ||
| Year | 2003 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
| Volume | 5116 | Issue | Pages | 551-562 | |
| Keywords |
membrane NbN HEB mixers, heterodyne receiver, stress-less membrane, coupling efficiency, submillimeter-waves frequency, low-cost space applications | ||||
| Abstract | We report in this paper a new concept for 2.7 THz superconducting Niobium nitride (NbN) Hot-Electron Bolometer mixer (HEB). The membrane process was developped for space telecommnunication applications a few years ago and the HEB mixer concept is now considered as the best choice for low-noise submillimeter-wave frequency heterodyne receivers. The idea is then to join these two technologies. The novel fabrication scheme is to fabricate a NbN HEB mixer on a 1 μm thick stress-less Si3N4/SiO2 membrane. This seems to present numerous improvements concerning : use at higher RF frequencies, power coupling efficiency, HEB mixer sensitivity, noise temperature, and space applications. This work is to be continued within the framework of an ESA TRP project, a 2.7 THz heterodyne camera with numerous applications including a SOFIA airborne receiver. This paper presents the whole fabrication process, the validation tests and preliminary results. Membrane-based HEB mixer theory is currently being investigated and further tests such as heterodyne and Fourier transform spectrometry measurement are planed shortly. | ||||
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| Publisher | SPIE | Place of Publication | Editor | Chiao, J.-C.; Varadan, V.K.; Cané, C. | |
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| Area | Expedition | Conference | Smart Sensors, Actuators, and MEMS | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1520 | |||
| Permanent link to this record | |||||
| Author | Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. | ||||
| Title | Thermal relaxation in metal films bottlenecked by diffuson lattice excitations of amorphous substrates | Type | Miscellaneous | ||
| Year | 2021 | Publication | arXiv | Abbreviated Journal | arXiv |
| Volume | Issue | Pages | |||
| Keywords |
metal films, NbN, InOx, Au/Ni, thermal relaxation | ||||
| Abstract | Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature Te of the films as a function of Joule power per unit of area P2D. In all samples, we observe the dependence P2D∝Tne with the exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear T-dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for the phonon mean free path smaller than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1163 | |||
| Permanent link to this record | |||||
| Author | Elezov, M. S.; Scherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. | ||||
| Title | Active and passive phase stabilization for the all-fiber Michelson interferometer | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1124 | Issue | Pages | 051014 (1 to 5) | |
| Keywords |
Michelson interferometer, phase stabilization | ||||
| Abstract | We put forward two methods for phase stabilization in the all-fiber Michelson interferometer. To perform passive phase stabilization, we use a heat bath for all fibers and electro-optical components, and put the interferometer in a hermetic case. To perform active phase stabilization, we monitor output power of the interferometer and develop an electronic feedback control. The phase stabilization methods enable stable interference pattern for several minutes, and can be helpful for the development of the optimal quantum receiver for coherent signals. | ||||
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| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1299 | |||
| Permanent link to this record | |||||
| Author | Wild, W.; Kardashev, N. S.; Likhachev, S. F.; Babakin, N. G.; Arkhipov, V. Y.; Vinogradov, I. S.; Andreyanov, V. V.; Fedorchuk, S. D.; Myshonkova, N. V.; Alexsandrov, Y. A.; Novokov, I. D.; Goltsman, G. N.; Cherepaschuk, A. M.; Shustov, B. M.; Vystavkin, A. N.; Koshelets, V. P.; Vdovin, V.F.; de Graauw, T.; Helmich, F.; vd Tak, F.; Shipman, R.; Baryshev, A.; Gao, J. R.; Khosropanah, P.; Roelfsema, P.; Barthel, P.; Spaans, M.; Mendez, M.; Klapwijk, T.; Israel, F.; Hogerheijde, M.; vd Werf, P.; Cernicharo, J.; Martin-Pintado, J.; Planesas, P.; Gallego, J. D.; Beaudin, G.; Krieg, J. M.; Gerin, M.; Pagani, L.; Saraceno, P.; Di Giorgio, A. M.; Cerulli, R.; Orfei, R.; Spinoglio, L.; Piazzo, L.; Liseau, R.; Belitsky, V.; Cherednichenko, S.; Poglitsch, A.; Raab, W.; Guesten, R.; Klein, B.; Stutzki, J.; Honingh, N.; Benz, A.; Murphy, A.; Trappe, N.; Räisänen, A. | ||||
| Title | Millimetron—a large Russian-European submillimeter space observatory | Type | Journal Article | ||
| Year | 2009 | Publication | Exp. Astron. | Abbreviated Journal | Exp. Astron. |
| Volume | 23 | Issue | 1 | Pages | 221-244 |
| Keywords |
Millimetron space observatory, VLBI, very long baseline interferometry | ||||
| Abstract | Millimetron is a Russian-led 12 m diameter submillimeter and far-infrared space observatory which is included in the Space Plan of the Russian Federation for launch around 2017. With its large collecting area and state-of-the-art receivers, it will enable unique science and allow at least one order of magnitude improvement with respect to the Herschel Space Observatory. Millimetron will be operated in two basic observing modes: as a single-dish observatory, and as an element of a ground-space very long baseline interferometry (VLBI) system. As single-dish, angular resolutions on the order of 3 to 12 arc sec will be achieved and spectral resolutions of up to a million employing heterodyne techniques. As VLBI antenna, the chosen elliptical orbit will provide extremely large VLBI baselines (beyond 300,000 km) resulting in micro-arc second angular resolution. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0922-6435 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1402 | |||
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| Author | Korneeva, Y.; Florya, I.; Vdovichev, S.; Moshkova, M.; Simonov, N.; Kaurova, N.; Korneev, A.; Goltsman, G. | ||||
| Title | Comparison of hot spot formation in nbn and mon thin superconducting films after photon absorption | Type | Journal Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 1-4 |
| Keywords |
MoNx SSPD | ||||
| Abstract | In superconducting single-photon detectors (SSPD), the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here, we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoN ∞ detectors, we study the dependence of detection efficiency on bias current, photon energy, and strip width, and compare it with NbN SSPD. We observe nonlinear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current, which we attribute to longer electron-phonon interaction time. | ||||
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| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1325 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 6 |
| Keywords |
Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
| Permanent link to this record | |||||
| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of a silicon membrane-based multipixel hot electron bolometer receiver | Type | Journal Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 1-5 |
| Keywords |
Multi-pixel, NbN HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1324 | |||
| Permanent link to this record | |||||
| Author | Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G. | ||||
| Title | On-chip controlled placement of nanodiamonds with a nitrogen-vacancy color centers (NV) | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1124 | Issue | Pages | 051046 (1 to 4) | |
| Keywords |
nanodiamonds, NV-centers | ||||
| Abstract | Here we studied the fabrication technique of a kilopixel array of nanodiamonds with a nitrogen-vacancy color centers (NV) on top of the chip and measured the second-order correlation function deep, clearly demonstrated the presence of single-photon sources. The controlled position of nanodiamonds, determined from the measurement of second-order correlation fiction, was realize, as well as the yield of optimized technique equals 12.5% is shown. | ||||
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| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1298 | |||
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| Author | Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. | ||||
| Title | Integration of nanodiamonds with NV-centers on optical silicon nitride structures | Type | Conference Article | ||
| Year | 2019 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 220 | Issue | Pages | 03013 | |
| Keywords |
nanodiamonds, NV-centers, Si3N4 | ||||
| Abstract | In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1190 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Electron-phonon interaction in ultrathin Nb films | Type | Journal Article | ||
| Year | 1990 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 70 | Issue | 3 | Pages | 505-511 |
| Keywords |
Nb films | ||||
| Abstract | A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms. 1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated. |
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 241 | |||
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| Author | Samsonova, A. S.; Zolotov, P. I.; Baeva, E. M.; Lomakin, A. I.; Titova, N. A.; Kardakova, A. I.; Goltsman, G. N. | ||||
| Title | Signatures of surface magnetic disorder in niobium films | Type | Journal Article | ||
| Year | 2021 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 31 | Issue | 5 | Pages | 1-5 |
| Keywords |
Nb films | ||||
| Abstract | We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder ( kFl≈150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm −2 , which is in agreement with the previously reported data for Nb films. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1792 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D. | ||||
| Title | Fast-response superconducting electron bolometer | Type | Journal Article | ||
| Year | 1989 | Publication | Pisma v Zhurnal Tekhnicheskoi Fiziki | Abbreviated Journal | Pisma v Zhurnal Tekhnicheskoi Fiziki |
| Volume | 15 | Issue | 3 | Pages | 88-92 |
| Keywords |
Nb HEB | ||||
| Abstract | The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns. | ||||
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| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1694 | |||
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| Author | Korneeva, Y.; Sidorova, M.; Semenov, A.; Krasnosvobodtsev, S.; Mitsen, K.; Korneev, A.; Chulkova, G.; Goltsman, G. | ||||
| Title | Comparison of hot-spot formation in NbC and NbN single-photon detectors | Type | Journal Article | ||
| Year | 2016 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 26 | Issue | 3 | Pages | 1-4 |
| Keywords |
NbC, NbN SSPD, SNSPD | ||||
| Abstract | We report an experimental investigation of the hot-spot evolution in superconducting single-photon detectors made of disordered superconducting materials with different diffusivity and energy downconversion time values, i.e., 33-nm-thick NbN and 23-nm-thick NbC films. We have demonstrated that, in NbC film, only 405-nm photons produce sufficiently large hot spot to trigger a single-photon response. The dependence of detection efficiency on bias current for 405-nm photons in NbC is similar to that for 3400-nm photons in NbN. In NbC, large diffusivity and downconversion time result in 1-D critical current suppression profile compared with the usual 2-D profile in NbN. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1348 | |||
| Permanent link to this record | |||||
| Author | Titova, N. A.; Baeva, E. M.; Kardakova, A. I.; Goltsman, G. N. | ||||
| Title | Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures | Type | Conference Article | ||
| Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1695 | Issue | Pages | 012190 | |
| Keywords |
NbN films, insulating membrane | ||||
| Abstract | Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in local equilibrium. In such case, the cooling of the NbN-based devices strongly depends on acoustic matching to the substrate and substrate thermal characteristics. For the insulating membrane much thicker than the NbN film, our preliminary results demonstrate that the membrane serves as an additional channel for the thermal relaxation of the NbN sample. That implies a negligible role of thermal boundary resistance of the NbN-SiNx:H interface in comparison with the internal thermal resistance of the insulating membrane. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1165 | |||
| Permanent link to this record | |||||
| Author | Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. | ||||
| Title | Technology for NbN HEB based multipixel matrix of THz range | Type | Conference Article | ||
| Year | 2018 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 195 | Issue | Pages | 05011 | |
| Keywords |
NbN HEB | ||||
| Abstract | The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1318 | |||
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| Author | Maslennikova, A.; Larionov, P.; Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. | ||||
| Title | Noise equivalent power and dynamic range of NBN hot-electron bolometers | Type | Conference Article | ||
| Year | 2011 | Publication | Proc. MLPLIT | Abbreviated Journal | Proc. MLPLIT |
| Volume | Issue | Pages | 146-148 | ||
| Keywords |
NbN HEB | ||||
| Abstract | |||||
| Address | Suzdal / Vladimir (Russia) | ||||
| Corporate Author | Thesis | ||||
| Publisher | Modern laser physics and laser-information technologies for science and manufacture | Place of Publication | Editor | ||
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| Area | Expedition | Conference | 1st international russian-chinese conference / youthschool-workshop | ||
| Notes | September 23-28, 2011 | Approved | no | ||
| Call Number | Serial | 1386 | |||
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| Author | Shurakov, A.; Seliverstov, S.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G. | ||||
| Title | Input bandwidth of hot electron bolometer with spiral antenna | Type | Journal Article | ||
| Year | 2012 | Publication | IEEE Trans. THz Sci. Technol. | Abbreviated Journal | IEEE Trans. THz Sci. Technol. |
| Volume | 2 | Issue | 4 | Pages | 400-405 |
| Keywords |
NbN HEB bolometers bandwidth, log-spiral antenna | ||||
| Abstract | We report the results of our study of the input bandwidth of hot electron bolometers (HEB) embedded into the planar log-spiral antenna. The sensitive element is made of the ultrathin superconducting NbN film patterned as a bridge at the feed of the antenna. The contacts between the antenna and a sensitive element are made from in situ deposited gold (i.e., deposited over NbN film without breaking vacuum), which gives high quality contacts and makes the response of the HEB at higher frequencies less affected by the RF loss. An accurate experimental spectroscopic procedure is demonstrated that leads to the confirmation of the wide ( 8 THz) bandwidth in this antenna coupled device. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2156-342X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1161 | |||
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| Author | Seliverstov, S. V.; Rusova, A. A.; Kaurova, N. S.; Voronov, B. M.; Goltsman, G. N. | ||||
| Title | Attojoule energy resolution of direct detector based on hot electron bolometer | Type | Conference Article | ||
| Year | 2016 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 741 | Issue | Pages | 012165 (1 to 5) | |
| Keywords |
NbN HEB detector | ||||
| Abstract | We characterize superconducting antenna-coupled NbN hot-electron bolometer (HEB) for direct detection of THz radiation operating at a temperature of 9.0 K. At signal frequency of 2.5 THz, the measured value of the optical noise equivalent power is 2.0×10-13 W-Hz-0.5. The estimated value of the energy resolution is about 1.5 aJ. This value was confirmed in the experiment with pulsed 1.55-μm laser employed as a radiation source. The directly measured detector energy resolution is 2 aJ. The obtained risetime of pulses from the detector is 130 ps. This value was determined by the properties of the RF line. These characteristics make our detector a device-of-choice for a number of practical applications associated with detection of short THz pulses. | ||||
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| Publisher | IOP Publishing | Place of Publication | Editor | ||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Seliverstov_2016 | Serial | 1337 | ||
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| Author | Zhang, W.; Miao, W.; Li, S. L.; Zhou, K. M.; Shi, S. C.; Gao, J. R.; Goltsman, G. N. | ||||
| Title | Measurement of the spectral response of spiral-antenna coupled superconducting hot electron bolometers | Type | Journal Article | ||
| Year | 2013 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 23 | Issue | 3 | Pages | 2300804-2300804 |
| Keywords |
NbN HEB detector | ||||
| Abstract | Measured spectral response of spiral-antenna coupled superconducting hot electron bolometers (HEBs) often drops dramatically at frequencies that are still within the frequency range of interest (e.g., ~ 5 THz). This is inconsistent with the implied low receiver noise temperatures from the same measurements. To understand this discrepancy, we exhaustively test and calibrate the thermal sources used in Fourier transform spectrometer measurements. We first investigate the absolute emission spectrum of high-pressure Hg arc lamp, then measure the spectral response of two spiral-antenna coupled NbN HEBs with a Martin-Puplett interferometer as spectrometer and 77 K blackbody as broadband signal source. The measured absolute emission spectrum of Hg arc lamp is proportional to frequency, corresponding to an equivalent blackbody temperature of 4000 K at 1 THz, 1500 K at 3 THz, and 800 K at 5 THz, respectively. Measured spectral response of spiral-antenna coupled NbN HEBs, corrected for air absorption, is nearly flat in the frequency range of 0.5-4 THz, consistent with simulated coupling efficiency between HEB and spiral-antenna. These results explain the discrepancy, and prove that spiral-antenna coupled superconducting NbN HEBs work well in a wide frequency range. In addition, this calibration method and these results are broadly applicable to other quasi-optical THz receivers. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1371 | |||
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