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Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
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Electron–phonon interaction in disordered conductors |
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1999 |
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Phys. Rev. B Condens. Matter |
Abbreviated Journal |
Phys. Rev. B Condens. Matter |
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263-264 |
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190-192 |
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disordered conductors, electron-phonon interaction |
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The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. |
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0921-4526 |
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1765 |
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Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. |
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О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси |
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Journal Article |
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1983 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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17 |
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3 |
Pages |
499-501 |
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shallow neutral impurities, capture, inverse distribution function, Si |
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1764 |
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Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. |
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Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда |
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1983 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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17 |
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10 |
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1873-1876 |
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compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance |
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1763 |
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Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. |
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Об одном способе определения концентрации глубоких примесей в германии |
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1983 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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17 |
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10 |
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1896-1898 |
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Ge, deep impurities |
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1762 |
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Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
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Title |
О механизме динамического сужения линии ЭПР доноров фосфора в кремнии |
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1984 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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18 |
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3 |
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421-425 |
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Si, phosphorus donors, EPR |
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Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам. |
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1761 |
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