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| Author | Kostiuk, T.; Spears, D. | ||||
Title  |
30 μm heterodyne receiver | Type | Journal Article | ||
| Year | 1987 | Publication | Int. J. Infrared and Millimeter Waves | Abbreviated Journal | |
| Volume | 8 | Issue | 10 | Pages | 1269-1279 |
| Keywords | HgCdTe detector mixer | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 235 | |||
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| Author | Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N. | ||||
| Title |
A fast infrared detector based on patterned YBCO thin film | Type | Journal Article | ||
| Year | 1994 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 7 | Issue | 5 | Pages | 321-323 |
| Keywords | YBCO HTS detector | ||||
| Abstract | Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time. | ||||
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| ISSN | 0953-2048 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1646 | |||
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| Author | Shurakov, Alexander; Tong, Cheuk-yu E.; Blundell, Raymond; Gol’tsman, Gregory | ||||
| Title |
A microwave pumped HEB direct detector using a homodyne readout scheme | Type | Abstract | ||
| Year | 2014 | Publication | Proc. 25th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 25th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 129 | ||
| Keywords | waveguide NbN HEB detector, NEP | ||||
| Abstract | We report the results of our study on the noise performance of a fast THz detector based on the repurpose of hot electron bolometer mixer (HEB). Instead of operating with an elevated bath temperature, microwave power is injected into the HEB device, which enhances the sensitivity of the detector and at the same time provide a mechanism for reading out impedance changes of the device induced by the modulated incident THz radiation [1]. We have demonstrated an improvement of the detector’s optical noise equivalent power (NEP). Furthermore, by introducing a homodyne readout scheme based on a room temperature microwave mixer, the dynamic range of the detector is increased. The HEB devices used in this work were made of 4 nm thick NbN film. The detector chips were installed into a waveguide mixer block fitted with a corrugated horn, mounted on the cold plate of a liquid helium cryostat. The HEBs were operated at a bath temperature of 4.2 K. The signal beam was terminated on black bodies at ambient and liquid nitrogen temperatures. A chopper wheel placed in front of the cryostat window operating at a frequency of 1.48 kHz modulated the input load temperature of the detector. A cold mesh filter, centered at 830 GHz, was used to define the input signal power bandwidth. Microwave was injected through a broadband directional coupler inside the cryostat. Our experiments were mostly conducted at a pump frequency of 1.5 GHz. The reflected microwave power from the HEB device was fed into a cryogenic low noise amplifier (LNA). The output of the LNA was connected to the RF input port of a room temperature microwave mixer, which beat the reflected signal from the HEB using a copy of the original 1.5 GHz injection signal in a homodyne demodulation scheme. The amplitude of the detected power was measured by a lock-in amplifier, which was synchronized to the chopper frequency. Preliminary results yield an optical NEP of ~1 pW/ Hz 1/2 which corresponds to an improvement of a factor of 3 compared to [1], driven mainly by a lowering of the system noise floor. The dynamic range was also increased by similar amount. References 1. A. Shurakov et al. “A Microwave Pumped Hot Electron Bolometric Direct Detector,” submitted on Oct 18, 2013 to Appl. Phys. Let. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1365 | |||
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| Author | Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G. | ||||
| Title |
A microwave reflection readout scheme for hot electron bolometric direct detector | Type | Journal Article | ||
| Year | 2015 | Publication | IEEE Trans. THz Sci. Technol. | Abbreviated Journal | IEEE Trans. THz Sci. Technol. |
| Volume | 5 | Issue | Pages | 81-84 | |
| Keywords | HEB detectors | ||||
| Abstract | In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ atomics90 @ | Serial | 950 | ||
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| Author | Siemsen, K. J.; Bernard, J. E.; Madej, A. A.; Marmet, L. | ||||
| Title |
Absolute frequency measurement of a CO2/OsO4 stabilized laser at 28.8 THz | Type | Journal Article | ||
| Year | 2001 | Publication | Applied Physics B: Lasers and Optics | Abbreviated Journal | Appl. Phys. B: Lasers and Optics |
| Volume | 72 | Issue | Pages | 567-573 | |
| Keywords | HgCdTe detector | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 462 | |||
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| Author | Semenov, A. V.; Devyatov, I. A.; Ryabchun, S. A.; Maslennikov, S. N.; Maslennikova, A. S.; Larionov, P. A.; Voronov, B. M.; Chulkova, G. M. | ||||
| Title |
Absorption of terahertz electromagnetic radiation in dirty superconducting film at arbitrary type of the spectral functions | Type | Journal Article | ||
| Year | 2011 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
| Volume | Issue | 10 | Pages | ||
| Keywords | terahertz electromagnetic radiation; superconductors; detectors of terahertz range | ||||
| Abstract | A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel. | ||||
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| Notes | 7 pages | Approved | no | ||
| Call Number | Serial | 1117 | |||
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| Author | Dauler, E. A.; Kerman, A. J.; Robinson, B. S.; Yang, J. K. W.; Voronov, B. M.; Gol’tsman, G. N.; Berggren, K. K. | ||||
| Title |
Achieving high counting rates in superconducting nanowire single-photon detectors | Type | Conference Article | ||
| Year | 2006 | Publication | CLEO/QELS | Abbreviated Journal | CLEO/QELS |
| Volume | Issue | Pages | JTuD3 (1 to 2) | ||
| Keywords | SSPD; SNSPD; Detectors; Photodetectors; Quantum optics; Quantum detectors; Photon counting; Photons; Pulse shaping; Quantum communications; Single photon detectors; Superconductors | ||||
| Abstract | Kinetic inductance is determined to be the primary limitation to the counting rate of superconducting nanowire single-photon counters. Approaches for overcoming this limitation will be discussed. | ||||
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| Publisher | Optical Society of America | Place of Publication | Editor | ||
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| Area | Expedition | Conference | Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1451 | |||
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| Author | Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
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Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector | Type | Journal Article | ||
| Year | 2020 | Publication | Nanomaterials (Basel) | Abbreviated Journal | Nanomaterials (Basel) |
| Volume | 10 | Issue | 5 | Pages | 1-12 |
| Keywords | detector; quantum dots; short-wave infrared range; silicon | ||||
| Abstract | In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. | ||||
| Address | Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2079-4991 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:32365694; PMCID:PMC7712218 | Approved | no | ||
| Call Number | Serial | 1151 | |||
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| Author | Kawano, Yukio; Ishibashi, Koji | ||||
| Title |
An on-chip near-field terahertz probe and detector | Type | Journal Article | ||
| Year | 2008 | Publication | Nature Photonics | Abbreviated Journal | Nature Photon |
| Volume | 2 | Issue | 10 | Pages | 618-621 |
| Keywords | single molecule, terahertz, THz, near-field, microscopy, imaging, 2DEG, GaAs/AlGaAs, detector, applications | ||||
| Abstract | The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1749-4885 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 570 | |||
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| Author | Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N. | ||||
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Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection | Type | Journal Article | ||
| Year | 2016 | Publication | Semicond. | Abbreviated Journal | Semicond. |
| Volume | 50 | Issue | 12 | Pages | 1600-1603 |
| Keywords | carbon nanotubes, CNT detectors | ||||
| Abstract | Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7826 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1776 | |||
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| Author | Seliverstov, S. V.; Rusova, A. A.; Kaurova, N. S.; Voronov, B. M.; Goltsman, G. N. | ||||
| Title |
Attojoule energy resolution of direct detector based on hot electron bolometer | Type | Conference Article | ||
| Year | 2016 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 741 | Issue | Pages | 012165 (1 to 5) | |
| Keywords | NbN HEB detector | ||||
| Abstract | We characterize superconducting antenna-coupled NbN hot-electron bolometer (HEB) for direct detection of THz radiation operating at a temperature of 9.0 K. At signal frequency of 2.5 THz, the measured value of the optical noise equivalent power is 2.0×10-13 W-Hz-0.5. The estimated value of the energy resolution is about 1.5 aJ. This value was confirmed in the experiment with pulsed 1.55-μm laser employed as a radiation source. The directly measured detector energy resolution is 2 aJ. The obtained risetime of pulses from the detector is 130 ps. This value was determined by the properties of the RF line. These characteristics make our detector a device-of-choice for a number of practical applications associated with detection of short THz pulses. | ||||
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| Publisher | IOP Publishing | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | Seliverstov_2016 | Serial | 1337 | ||
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| Author | Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. | ||||
| Title |
Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity | Type | Journal Article | ||
| Year | 2014 | Publication | Laser Phys. Lett. | Abbreviated Journal | |
| Volume | 11 | Issue | 1 | Pages | 015004 (1 to 4) |
| Keywords | HEB applications, HEB detector applications, short THz pulses detection | ||||
| Abstract | We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1076 | |||
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| Author | González, F. J.; Boreman, G. D. | ||||
| Title |
Comparison of dipole, bowtie, spiral and log-periodic IR antennas | Type | Journal Article | ||
| Year | 2005 | Publication | Infrared Physics & Technology | Abbreviated Journal | Inf Phys & Technol |
| Volume | 46 | Issue | 5 | Pages | 418-428 |
| Keywords | optical antennas; Microbolometer; Infrared antennas; Antenna efficiency; Antenna-coupled detectors | ||||
| Abstract | Antenna-coupled microbolometers use planar lithographic antennas to couple infrared radiation into a bolometer with sub-micron dimensions. In this paper four different types of infrared antennas were fabricated on thin grounded-substrates and coupled to microbolometers. Dipole, bowtie, spiral and log-periodic IR antenna-coupled detectors were measured at 10.6 μm and their performance compared. A new method to calculate the radiation efficiency based on the spatial and angular response of infrared antennas is presented and used to evaluate their performance. The calculated radiation efficiency for the dipole, bowtie, spiral and log-periodic IR antennas was 20%, 37%, 25% and 46% respectively. A dipole-length study was performed and shows that the quasistatic value of the effective permittivity accurately describes the incident wavelength in the substrate at infrared frequencies for antennas on a thin substrate. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 739 | ||
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| Author | Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory | ||||
| Title |
Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Transactions on Applied Superconductivity | Abbreviated Journal | IEEE Transactions on Applied Superconductiv |
| Volume | 27 | Issue | 4 | Pages | 5 |
| Keywords | Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors | ||||
| Abstract | In superconducting single-photon detectors SSPD the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoNx detectors we study the dependence of detection efficiency on bias current, photon energy, and strip width and compare it with NbN SSPD. We observe non-linear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current which we attribute to longer electronphonon interaction time. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1114 | ||
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| Author | Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. | ||||
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Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures | Type | Journal Article | ||
| Year | 2010 | Publication | Bull. Russ. Acad. Sci. Phys. | Abbreviated Journal | Bull. Russ. Acad. Sci. Phys. |
| Volume | 74 | Issue | 1 | Pages | 100-102 |
| Keywords | 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth | ||||
| Abstract | The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. | ||||
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| ISSN | 1062-8738 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1217 | |||
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