Records |
Author |
Goltsman, G. |
Title |
Superconducting thin film as infrared heterodyne and direct detectors |
Type |
Conference Article |
Year |
2017 |
Publication |
16th ISEC |
Abbreviated Journal |
16th ISEC |
Volume |
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Issue |
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Pages |
1-3 |
Keywords |
optical waveguide SSPD, SNSPD |
Abstract |
We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chip-quantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. |
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no |
Call Number |
8314188 |
Serial |
1323 |
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Author |
Goltsman, Gregory |
Title |
Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors |
Type |
Conference Article |
Year |
2017 |
Publication |
16th ISEC |
Abbreviated Journal |
16th ISEC |
Volume |
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Issue |
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Pages |
Th-I-QTE-03 (1 to 3) |
Keywords |
waveguide SSPD, SNSPD |
Abstract |
We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chipquantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. |
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IEEE/CSC & ESAS Superconductivity News Forum |
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no |
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1745 |
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Author |
Yang, J.K.W.; Kerman, A.J.; Dauler, E.A.; Cord, B.; Anant, V.; Molnar, R.J.; Berggren, K.K. |
Title |
Suppressed critical current in superconducting nanowire single-photon detectors with high fill-factors |
Type |
Journal Article |
Year |
2009 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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Volume |
19 |
Issue |
3 |
Pages |
318-322 |
Keywords |
SNSPD |
Abstract |
In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor. |
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RPLAB @ gujma @ |
Serial |
677 |
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Author |
Engel, Andreas; Aeschbacher, Adrian; Inderbitzin, Kevin; Schilling, Andreas; Il'in, Konstantin; Hofherr, Matthias; Siegel, Michael; Semenov, Alexei; Hübers, Heinz-Wilhelm |
Title |
Tantalum nitride superconducting single-photon detectors with low cut-off energy |
Type |
Journal Article |
Year |
2011 |
Publication |
arXiv |
Abbreviated Journal |
arXiv |
Volume |
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Issue |
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Pages |
9 |
Keywords |
SSPD |
Abstract |
Materials with a small superconducting energy gap favor a high detection efficiency of low-energy photons in superconducting nanowire single-photon detectors. We developed a TaN detector with smaller gap and lower density of states at the Fermi energy than in comparable NbN devices, while other relevant parameters remain essentially unchanged. This results in a reduction of the minimum photon energy required for direct detection to $\approx1/3$ as compared to NbN. |
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arXiv:1110.4576 |
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no |
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RPLAB @ gujma @ |
Serial |
687 |
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Author |
Zolotov, P. I.; Vakhtomin, Yu. B.; Divochiy, A. V.; Seleznev, V. A.; Smirnov, K. V. |
Title |
Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons |
Type |
Journal Article |
Year |
2016 |
Publication |
Proc. 5th Int. Conf. Photonics and Information Optics |
Abbreviated Journal |
Proc. 5th Int. Conf. Photonics and Information Optics |
Volume |
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Issue |
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Pages |
115-116 |
Keywords |
NbN SSPD |
Abstract |
This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures. |
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Russian |
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978-5-7262-2215-8 |
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http://fioconf.mephi.ru/files/2015/12/FIO2016-Sbornik.pdf Разработка технологии создания резонаторных структур для увеличения квантовой эффективности NBN детекторов ИК-фотонов |
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no |
Call Number |
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Serial |
1811 |
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