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Author Goltsman, G.
Title (up) Superconducting thin film as infrared heterodyne and direct detectors Type Conference Article
Year 2017 Publication 16th ISEC Abbreviated Journal 16th ISEC
Volume Issue Pages 1-3
Keywords optical waveguide SSPD, SNSPD
Abstract We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chip-quantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device.
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Notes Approved no
Call Number 8314188 Serial 1323
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Author Goltsman, Gregory
Title (up) Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors Type Conference Article
Year 2017 Publication 16th ISEC Abbreviated Journal 16th ISEC
Volume Issue Pages Th-I-QTE-03 (1 to 3)
Keywords waveguide SSPD, SNSPD
Abstract We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chipquantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device.
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Area Expedition Conference IEEE/CSC & ESAS Superconductivity News Forum
Notes Approved no
Call Number Serial 1745
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Author Yang, J.K.W.; Kerman, A.J.; Dauler, E.A.; Cord, B.; Anant, V.; Molnar, R.J.; Berggren, K.K.
Title (up) Suppressed critical current in superconducting nanowire single-photon detectors with high fill-factors Type Journal Article
Year 2009 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 19 Issue 3 Pages 318-322
Keywords SNSPD
Abstract In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor.
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Notes Approved no
Call Number RPLAB @ gujma @ Serial 677
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Author Engel, Andreas; Aeschbacher, Adrian; Inderbitzin, Kevin; Schilling, Andreas; Il'in, Konstantin; Hofherr, Matthias; Siegel, Michael; Semenov, Alexei; Hübers, Heinz-Wilhelm
Title (up) Tantalum nitride superconducting single-photon detectors with low cut-off energy Type Journal Article
Year 2011 Publication arXiv Abbreviated Journal arXiv
Volume Issue Pages 9
Keywords SSPD
Abstract Materials with a small superconducting energy gap favor a high detection efficiency of low-energy photons in superconducting nanowire single-photon detectors. We developed a TaN detector with smaller gap and lower density of states at the Fermi energy than in comparable NbN devices, while other relevant parameters remain essentially unchanged. This results in a reduction of the minimum photon energy required for direct detection to $\approx1/3$ as compared to NbN.
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Publisher Place of Publication arXiv:1110.4576 Editor
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Notes Approved no
Call Number RPLAB @ gujma @ Serial 687
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Author Zolotov, P. I.; Vakhtomin, Yu. B.; Divochiy, A. V.; Seleznev, V. A.; Smirnov, K. V.
Title (up) Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons Type Journal Article
Year 2016 Publication Proc. 5th Int. Conf. Photonics and Information Optics Abbreviated Journal Proc. 5th Int. Conf. Photonics and Information Optics
Volume Issue Pages 115-116
Keywords NbN SSPD
Abstract This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures.
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Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN 978-5-7262-2215-8 Medium
Area Expedition Conference
Notes http://fioconf.mephi.ru/files/2015/12/FIO2016-Sbornik.pdf Разработка технологии создания резонаторных структур для увеличения квантовой эффективности NBN детекторов ИК-фотонов Approved no
Call Number Serial 1811
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