Abstract: Superconducting nanowire single-photon detectors (SNSPDs or SSPD) are highly promising devices in the growing field of quantum information and communications technology. We have developed a practical SSPD system with our superconducting thin films and devices fabrication, optical coupling packaging, and cryogenic technology. The SSPD system consists of six-channel SSPD devices and a compact Gifford-McMahon (GM) cryocooler, and can operate continuously on 100 V ac power without the need for any cryogens. The SSPD devices were fabricated from high-quality niobium nitride (NbN) ultrathin films that were epitaxially grown on single-crystal MgO substrates. The packaged SSPD devices were temperature stabilized to 2.96 K ± 10 mK. The system detection efficiency for an SSPD device with an area of 20 × 20 ¿m2 was found to be 2.6% and 4.5% at wavelengths of 1550 and 1310 nm, respectively, at a dark count rate of 100 Hz, and a jitter of 100 ps full-width at half maximum. We also performed ultrafast BB84 quantum key distribution (QKD) field testing and entanglement-based QKD experiments using these SSPD devices.

Abstract: We developed a fiber-coupled superconducting nanowire single-photon detector system in a close-cycled cryocooler and achieved 24% and 22% system detection efficiencies at wavelengths of 1550 and 1315 nm, respectively. The maximum dark count rate was ~1000 counts/s.

Abstract: The effects of thermal annealing on vanadium oxide (VOx) thin films prepared by pulsed-dc magnetron sputtering were studied to explore methods of improving the efficiency of uncooled IR imaging microbolometers, particularly with respect to maximizing the temperature coefficients of resistance (TCR) (typically ~2%) while minimizing resistivity values (typically 0.05–5 Ω cm). Since high TCR values are usually associated with high resistivities, the experiments were designed to find processing conditions that provide an optimal balance in these properties and to then determine the underlying structural correlations which would enable rational design of thin films for this specific application. VOx films of different compositions were deposited by pulsed-dc reactive sputtering from a vanadium target at different oxygen flow rates. The deposited films were further modified by annealing in inert (nitrogen) and oxidizing (oxygen) atmospheres at four different temperatures for 10, 20, or 30 min at a time. The resistivities of the as-deposited films ranged from 0.2 to 13 Ω cm and the TCR values varied from –1.6% to –2.2%. Depending on the exact annealing conditions, several orders of magnitude change in resistance and significant variations in TCR were observed. Optimal results were obtained with annealing in a nitrogen atmosphere. Structural characterization by x-ray diffraction, field emission scanning electron microscopy, atomic force microscopy, and Raman spectroscopy indicated changes in the film crystallinity and phase for annealing conditions over 300 °C with the onset and extent of the changes dependent on which annealing atmosphere was used.