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| Author | Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H. W.; Svechnikov, S.; Voronov, B.; Gol'tsman, G.; Wang, Z. | ||||
| Title | Hot electron bolometric mixers based on NbN films deposited on MgO substrates | Type | Conference Article | ||
| Year | 1999 | Publication | Inst. Phys. Conf. Ser. | Abbreviated Journal | Inst. Phys. Conf. Ser. |
| Volume | 167 | Issue | Pages | 687-690 | |
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| Publisher | Place of Publication | Barcelona, Spain | Editor | ||
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| Area | Expedition | Conference | 4th Europ. Conf. on Appl. Superconductivity, Inst. Phys. Conf. Ser. | ||
| Notes | Approved | no | |||
| Call Number | Serial | 297 | |||
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| Author | Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V. | ||||
| Title | Development of disordered ultra-thin superconducting vanadium nitride films | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. 8th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 8th Int. Conf. Photonics and Information Optics |
| Volume | Issue | Pages | 425-426 | ||
| Keywords | VN films | ||||
| Abstract | We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| ISSN | ISBN | 978-5-7262-2536-4 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf | Approved | no | ||
| Call Number | Serial | 1802 | |||
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| Author | Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. | ||||
| Title | Characterization of topologies of superconducting photon number resolving detectors | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. 8th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 8th Int. Conf. Photonics and Information Optics |
| Volume | Issue | Pages | 465-466 | ||
| Keywords | PNR SSPD | ||||
| Abstract | Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| ISSN | ISBN | 978-5-7262-2536-4 | Medium | ||
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| Notes | http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf | Approved | no | ||
| Call Number | Serial | 1803 | |||
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| Author | Елезов, М. С.; Корнеев, А. А; Дивочий, А. В.; Гольцман, Г. Н. | ||||
| Title | Сверхпроводящие однофотонные детекторы с разрешением числа фотонов | Type | Conference Article | ||
| Year | 2009 | Publication | Науч. сессия МИФИ | Abbreviated Journal | Науч. сессия МИФИ |
| Volume | Issue | Pages | 47-58 | ||
| Keywords | PNR SSPD, SNSPD | ||||
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| ISSN | ISBN | 978-5-7262-1042-1 | Medium | ||
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| Notes | УДК 533.14(06)+004.056(06) Фотоника и информационная оптика | Approved | no | ||
| Call Number | RPLAB @ sasha @ елезов2009сверхпроводящие | Serial | 1029 | ||
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| Author | Mehdi, I.; Gol'tsman, G.; Putz, P. | ||||
| Title | Introduction to the mini-special-issue on the 25th international symposium on space terahertz technology (ISSTT) | Type | Miscellaneous | ||
| Year | 2015 | Publication | IEEE Trans. THz Sci. Technol. | Abbreviated Journal | IEEE Trans. THz Sci. Technol. |
| Volume | 5 | Issue | 1 | Pages | 14-15 |
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| Abstract | THE 25th International Symposium on Space Terahertz Technology (ISSTT) was held in Moscow, Russia, between April 27–30, 2014. The conference was organized by Moscow State Pedagogical University and the Higher School of Economics (National Research University) and Chaired by Professor Gregory Gol'tsman of Moscow State Pedagogical University. The conference was attended by roughly 150 participants from 15 countries. The technology covered by ISSTT includes detectors, devices, circuits and systems in various areas of THz science and technology. Each year this symposium brings together the global THz space science technology community, and as such, emphasizes the broad international collaboration that is required to execute these large complicated instrument programs that dominate this field. However, talks covering technologies for balloon, aircraft, and ground-based telescopes were also presented. In this special section of IEEE Transactions on Terahertz Science and Technology, we include eight expanded papers from the 25th ISSTT symposium. The papers range from development of SIS mixers to optical adjustment systems for radio telescopes. The 26th ISSTT will be held in Boston, MA, USA, during March 16–18, 2015. Researchers and scientist involved in THz research are invited to attend this symposium (more details are at http://www.cfa.harvard.edu/events/2015/isstt2015/). You can access the full list of papers presented at the ISSTT symposia from the National Radio Astronomy Observatory website: http://www.nrao.edu/meetings/isstt/index.shtml Yours sincerely |
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| ISSN | 2156-342X | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1353 | |||
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| Author | Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Silicon room temperature IR detectors coated with Ag2S quantum dots | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
| Volume | Issue | Pages | 369-371 | ||
| Keywords | silicon detector, quantum dot, IR, surface states | ||||
| Abstract | For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. | ||||
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| ISSN | ISBN | 978-5-89513-451-1 | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1154 | |||
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| Author | Проходцов, А. И.; Голиков, А. Д.; Ан, П. П.; Ковалюк, В. В.; Гольцман, Г. Н. | ||||
| Title | Влияние покрытия из оксида кремния на эффективность фокусирующего решеточного элемента связи из нитрида кремния | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
| Volume | Issue | Pages | 201-203 | ||
| Keywords | integrated optics, silicon nitride, focusing grating coupler | ||||
| Abstract | В работе экспериментально изучена зависимость эффективности фокусирующего решеточного элемента связи от периода и фактора заполнения до и после напыления верхнего слоя из оксида кремния. Полученные данные имеют практическое значение при создании перестраиваемых интегрально-оптических устройств на нитриде кремния. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Duplicated as 1188 | Approved | no | ||
| Call Number | Serial | 1282 | |||
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| Author | Елезов, М. С.; Щербатенко, М. Л.; Сыч, Д. В.; Гольцман, Г. Н. | ||||
| Title | Практические особенности работы оптоволоконного квантового приемника Кеннеди | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
| Volume | Issue | Pages | 303-305 | ||
| Keywords | Kennedy quantum receiver, fiber, quantum optics, standard quantum limit, superconducting nanowire single-photon detector, coherent detection | ||||
| Abstract | Мы рассматриваем практические особенности работы квантового приемника на основе схемы Кеннеди, собранного из стандартных оптоволоконных элементов и сверхпроводникового детектора одиночных фотонов. Приемник разработан для различения двух фазовомодулированных когерентных состояний света на длине волны 1,5 микрона в непрерывном режиме с частотой модуляции 200 КГц и уровнем ошибок различения примерно в два раза ниже стандартного квантового предела. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Duplicated as 1288 | Approved | no | ||
| Call Number | Serial | 1283 | |||
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| Author | Елманов, И. А.; Елманова, А. В.; Голиков, А. Д.; Комракова, С. А.; Каурова, Н. С.; Ковалюк, В. В.; Гольцман, Г. Н. | ||||
| Title | Способ определения параметров резистов для электронной литографии фотонных интегральных схем на платформе нитрида кремния | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
| Volume | Issue | Pages | 306-308 | ||
| Keywords | Si3N4, e-beam lithography, EBL | ||||
| Abstract | В работе были измерены толщины резистов ZEP 520A и ma-N 2400 для электронно-лучевой литографии, неразрушающим способом, а также подобран рецепт, обеспечивающий высокое отношение скорости травления нитрида кремния по сравнению с резистом. Работа имеет практическое значение для электронной литографии интегрально-оптических устройств и устройств нанофотоники на основе нитрида кремния. | ||||
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| Notes | Duplicated as 1189 | Approved | no | ||
| Call Number | Serial | 1284 | |||
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| Author | Елманова, А.; Елманов, И.; Комракова, С.; Голиков, А.; Джавадзадэ, Д.; Воробьёв, В.; Большедворский, С.; Сошенко, В.; Акимов, А.; Ковалюк, В.; Гольцман, Г. | ||||
| Title | Способ интеграции наноалмазов с нанофотонными устройствами из нитрида кремния | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
| Volume | Issue | Pages | 309-311 | ||
| Keywords | nanodiamonds, NV-centers | ||||
| Abstract | В работе были разработаны оптические структуры из нитрида кремния для дальнейшего размещения на них наноалмазов с NV-центрами, опробованы различные методики нанесения раствора наноалмазов и выбрана оптимальная. Работа имеет практическое значение в области нанофотоники и создании квантово-оптических устройств с однофотонными источниками. | ||||
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| Notes | Duplicated as 1190 | Approved | no | ||
| Call Number | Serial | 1285 | |||
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