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Zhang, J., Pearlman, A., Slysz, W., Verevkin, A., Sobolewski, R., Wilsher, K., et al. (2003). A superconducting single-photon detector for CMOS IC probing. In Proc. 16-th LEOS (Vol. 2, pp. 602–603).
Abstract: In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA).
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Korneev, A., Lipatov, A., Okunev, O., Chulkova, G., Smirnov, K., Gol’tsman, G., et al. (2003). GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits. Microelectronic Engineering, 69(2-4), 274–278.
Abstract: We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics.
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Zhang, J., Boiadjieva, N., Chulkova, G., Deslandes, H., Gol'tsman, G. N., Korneev, A., et al. (2003). Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors. Electron. Lett., 39(14), 1086–1088.
Abstract: The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
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Sobolewski, R., Zhang, J., Slysz, W., Pearlman, A., Verevkin, A., Lipatov, A., et al. (2003). Ultrafast superconducting single-photon optical detectors. In J. Spigulis, J. Teteris, M. Ozolinsh, & A. Lusis (Eds.), Proc. SPIE (Vol. 5123, pp. 1–11). SPIE.
Abstract: We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography.
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Verevkin, A. A., Pearlman, A., Slysz, W., Zhang, J., Sobolewski, R., Chulkova, G., et al. (2003). Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications. In E. Donkor, A. R. Pirich, & H. E. Brandt (Eds.), Proc. SPIE (Vol. 5105, pp. 160–170). SPIE.
Abstract: We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10-18 W/Hz1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed.
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Zhang, J., Pearlman, A., Slysz, W., Verevkin, A., Sobolewski, R., Okunev, O., et al. (2003). Infrared picosecond superconducting single-photon detectors for CMOS circuit testing. In CLEO/QELS (Cmv4). Optical Society of America.
Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system.
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Zhang, J., Słysz, W., Pearlman, A., Verevkin, A., Sobolewski, R., Okunev, O., et al. (2003). Time delay of resistive-state formation in superconducting stripes excited by single optical photons. Phys. Rev. B, 67(13), 132508 (1 to 4).
Abstract: We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.
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Korneev, A., Kouminov, P., Matvienko, V., Chulkova, G., Smirnov, K., Voronov, B., et al. (2004). Sensitivity and gigahertz counting performance of NbN superconducting single-photon detectors. Appl. Phys. Lett., 84(26), 5338–5340.
Abstract: We have measured the quantum efficiencysQEd, GHz counting rate, jitter, and noise-equivalentpowersNEPdof nanostructured NbN superconducting single-photon detectorssSSPDsdin thevisible to infrared radiation range. Our 3.5-nm-thick and 100- to 200-nm-wide meander-typedevices(total area 10310mm2), operating at 4.2 K, exhibit an experimental QE of up to 20% inthe visible range and,10% at 1.3 to 1.55mm wavelength and are potentially sensitive up tomidinfrareds,10mmdradiation. The SSPD counting rate was measured to be above 2 GHz withjitter,18 ps, independent of the wavelength. The devices’ NEP varies from,10−17W/Hz1/2for1.55mm photons to,10−20W/Hz1/2for visible radiation. Lowering the SSPD operatingtemperature to 2.3 K significantly enhanced its performance, by increasing the QE to,20% andlowering the NEP level to,3310−22W/Hz1/2, both measured at 1.26mm wavelength.
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Verevkin, A., Pearlman, A., Slysz, W., Zhang, J., Currie, M., Korneev, A., et al. (2004). Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications. J. Modern Opt., 51(9-10), 1447–1458.
Abstract: The paper reports progress on the design and development of niobium-nitride, superconducting single-photon detectors (SSPDs) for ultrafast counting of near-infrared photons for secure quantum communications. The SSPDs operate in the quantum detection mode, based on photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-width superconducting stripe. The devices are fabricated from 3.5 nm thick NbN films and kept at cryogenic (liquid helium) temperatures inside a cryostat. The detector experimental quantum efficiency in the photon-counting mode reaches above 20% in the visible radiation range and up to 10% at the 1.3–1.55 μn infrared range. The dark counts are below 0.01 per second. The measured real-time counting rate is above 2 GHz and is limited by readout electronics (the intrinsic response time is below 30 ps). The SSPD jitter is below 18 ps, and the best-measured value of the noise-equivalent power (NEP) is 2 × 10−18 W/Hz1/2. at 1.3 μm. In terms of photon-counting efficiency and speed, these NbN SSPDs significantly outperform semiconductor avalanche photodiodes and photomultipliers.
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Rubtsova, I., Korneev, A., Matvienko, V., Chulkova, G., Milostnaya, I., Goltsman, G., et al. (2004). Spectral sensitivity, quantum efficiency, and noise equivalent power of NbN superconducting single-photon detectors in the IR range. In Proc. 29th IRMMW / 12th THz (pp. 461–462).
Abstract: We have developed nanostructured NbN superconducting single-photon detectors capable of GHz-rate photon counting in the 0.4 to 5 /spl mu/m wavelength range. Quantum efficiency of 30%, dark count rate 3/spl times/10/sup -4/ s/sup -1/, and NEP=10/sup -20/ W/Hz/sup -1/2/ have been measured at the 1.3-/spl mu/m wavelength for the device operating at 2.0 K.
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