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Zhang J, Pearlman A, Slysz W, Verevkin A, Sobolewski R, Okunev O, et al. Infrared picosecond superconducting single-photon detectors for CMOS circuit testing. In: CLEO/QELS. Optical Society of America; 2003. Cmv4.
Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system.
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Gershenzon EM, Gol'tsman GN, Zorin MA, Karasik BS, Trifonov VA. Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation. In: Council on Low-temp. Phys.; 1994. p. 82–3.
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Chulcova GM, Ptitsina NG, Gershenzon EM, Gershenzon ME, Sergeev AV. Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films. In: Czech J. Phys. Vol 46.; 1996. p. 2489–90.
Abstract: The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
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Il'in KS, Karasik BS, Ptitsina NG, Sergeev AV, Gol'tsman GN, Gershenzon EM, et al. Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity. In: Czech. J. Phys. Vol 46.; 1996. p. 857–8.
Abstract: Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
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Eletskii AV, Sarychev AK, Boginskaya IA, Bocharov GS, Gaiduchenko IA, Egin MS, et al. Amplification of a Raman scattering signal by carbon nanotubes. Dokl Phys. 2018;63(12):496–8.
Abstract: The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes.
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Zhang J, Boiadjieva N, Chulkova G, Deslandes H, Gol'tsman GN, Korneev A, et al. Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors. Electron Lett. 2003;39(14):1086–8.
Abstract: The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
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Lobanov YV, Shcherbatenko ML, Semenov AV, Kovalyuk VV, Korneev AA, Goltsman GN, et al. Heterodyne spectroscopy with superconducting single-photon detector. In: EPJ Web Conf. Vol 132.; 2017. 01005.
Abstract: We demonstrate successful operation of a Superconducting Single Photon Detector (SSPD) as the core element in a heterodyne receiver. Irradiating the SSPD by both a local oscillator power and signal power simultaneously, we observed beat signal at the intermediate frequency of a few MHz. Gain bandwidth was found to coincide with the detector single pulse width, where the latter depends on the detector kinetic inductance, determined by the superconducting nanowire length.
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Prokhodtsov A, Golikov A, An P, Kovalyuk V, Goltsman G, Arakelyan S, et al. Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency. In: EPJ Web Conf. Vol 220.; 2019. 02009.
Abstract: The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform.
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Elmanov I, Elmanova A, Komrakova S, Golikov A, Kaurova N, Kovalyuk V, et al. Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform. In: EPJ Web Conf. Vol 220.; 2019. 03012.
Abstract: In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
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Elmanova A, Elmanov I, Komrakova S, Golikov A, Javadzade J, Vorobyev V, et al. Integration of nanodiamonds with NV-centers on optical silicon nitride structures. In: EPJ Web Conf. Vol 220.; 2019. 03013.
Abstract: In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources.
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