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Корнеев АА, Минаева О, Рубцова И, Милостная И, Чулкова Г, Воронов Б, et al. Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN. Квантовая электроника. 2005;35(8):698–700.
Abstract: Представлены результаты исследований сверхпроводящих однофотонных детекторов, изготовленных из ультратонкой пленки NbN. Развитие технологического процесса изготовления детекторов, а также снижение рабочей температуры до 2 К позволили существенно увеличить квантовую эффективность: для видимого света (λ = 0.56 мкм) она составила 30%–40%, т.е. достигла предела, определяемого коэффициентом поглощения пленки. С ростом длины волны квантовая эффективность экспоненциально падает, составляя ~20% на λ=1.55 мкм и ~0.02% на λ = 5 мкм. При скорости темнового счета ~10-4s-1 экспериментально измеренная эквивалентная мощность шума составила 1.5 × 10-20 Вт/Гц-1/2; в дальнейшем она может быть уменьшена до рекордно низкого значения 5 × 10-21 Вт/Гц-1/2. Временное разрешение детектора равно 30 пс.
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Zhang J, Slysz W, Verevkin A, Okunev O, Chulkova G, Korneev A, et al. Response time characterization of NbN superconducting single-photon detectors. IEEE Trans. Appl. Supercond.. 2003;13(2):180–3.
Abstract: We report our time-resolved measurements of NbN-based superconducting single-photon detectors. The structures are meander-type, 10-nm thick, and 200-nm wide stripes and were operated at 4.2 K. We have shown that the NbN devices can count single-photon pulses with below 100-ps time resolution. The response signal pulse width was about 150 ps, and the system jitter was measured to be 35 ps.
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Zhang J, Verevkin A, Slysz W, Chulkova G, Korneev A, Lipatov A, et al. Time-resolved characterization of NbN superconducting single-photon optical detectors. In: Armitage JC, editor. Proc. SPIE. Vol 10313. SPIE; 2017. 103130F (1 to 3).
Abstract: NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest.
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Zhang J, Pearlman A, Slysz W, Verevkin A, Sobolewski R, Wilsher K, et al. A superconducting single-photon detector for CMOS IC probing. In: Proc. 16-th LEOS. Vol 2.; 2003. p. 602–3.
Abstract: In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA).
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Zhang J, Pearlman A, Slysz W, Verevkin A, Sobolewski R, Okunev O, et al. Infrared picosecond superconducting single-photon detectors for CMOS circuit testing. In: CLEO/QELS. Optical Society of America; 2003. Cmv4.
Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system.
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Zhang J, Boiadjieva N, Chulkova G, Deslandes H, Gol'tsman GN, Korneev A, et al. Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors. Electron Lett. 2003;39(14):1086–8.
Abstract: The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
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Verevkin A, Zhang J, Slysz W, Sobolewski R, Lipatov A, Okunev O, et al. Spectral sensitivity and temporal resolution of NbN superconducting single-photon detectors. In: Proc. 13th Int. Symp. Space Terahertz Technol.; 2002. p. 105–11.
Abstract: We report our studies on spectral sensitivity and time resolution of superconducting NbN thin film single-photon detectors (SPDs). Our SPDs exhibit an everimentally measured detection efficiencies (DE) from — 0.2% at 2=1550 nm up to —3% at lambda=405 nm wavelength for 10-nm film thickness devices and up to 3.5% at lambda=1550 nm for 3.5-nm film thickness devices. Spectral dependences of detection efficiency (DE) at 2=0.4 —3.0 pm range are presented. With variable optical delay setup, it is shown that NbN SPD potentially can resolve optical pulses with the repetition rate up to 10 GHz at least. The observed full width at the half maximum (FWHM) of the signal pulse is about 150-180 ps, limited by read-out electronics. The jitter of NbN SPD is measured to be —35 ps at optimum biasing.
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Verevkin A, Zhang J, Pearlman A, Slysz W, Sobolewski R, Korneev A, et al. Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range.; 2004.
Abstract: We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices.
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Verevkin A, Slysz W, Pearlman A, Zhang J, Sobolewski R, Okunev O, et al. Real-time GHz-rate counting of infrared photons using nanostructured NbN superconducting detectors. In: CLEO/QELS. Optical Society of America; 2003. CThM8.
Abstract: We demonstrate that our ultrathin, nanometer-width NbN superconducting single-photon detectors are capable of above 1-GHz-frequency, real-time counting of near-infrared photons. The measured system jitter of the detector is below 15 ps.
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Verevkin A, Pearlman A, Slysz W, Zhang J, Currie M, Korneev A, et al. Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications. J Modern Opt. 2004;51(9-10):1447–58.
Abstract: The paper reports progress on the design and development of niobium-nitride, superconducting single-photon detectors (SSPDs) for ultrafast counting of near-infrared photons for secure quantum communications. The SSPDs operate in the quantum detection mode, based on photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-width superconducting stripe. The devices are fabricated from 3.5 nm thick NbN films and kept at cryogenic (liquid helium) temperatures inside a cryostat. The detector experimental quantum efficiency in the photon-counting mode reaches above 20% in the visible radiation range and up to 10% at the 1.3–1.55 μn infrared range. The dark counts are below 0.01 per second. The measured real-time counting rate is above 2 GHz and is limited by readout electronics (the intrinsic response time is below 30 ps). The SSPD jitter is below 18 ps, and the best-measured value of the noise-equivalent power (NEP) is 2 × 10−18 W/Hz1/2. at 1.3 μm. In terms of photon-counting efficiency and speed, these NbN SSPDs significantly outperform semiconductor avalanche photodiodes and photomultipliers.
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