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Author |
Semenov, A.; Richter, H.; Hübers, H.-W.; Smirnov, K.; Voronov, B.; Gol'tsman, G. |
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Title |
Development of terahertz superconducting hot-electron bolometer mixers |
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Conference Article |
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Year |
2003 |
Publication |
Proc. 6th European Conf. Appl. Supercond. |
Abbreviated Journal |
Proc. 6th European Conf. Appl. Supercond. |
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Volume |
181 |
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2960-2965 |
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Keywords |
NbN HEB mixers |
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Abstract |
We present recent results of the development of phonon cooled hot-electron bolometric (HEB) mixers for airborne and balloon borne terahertz heterodyne receivers. Three iomportant issues have been addresses: the quality of NbN films the HEB mixers were made from, the spectral properties of the HEB mixers and the local oscillator power required for optical operation. Studies with an atomic force microscope indicate, that the performance of the HEB mixer might have been effected by the microstructure of the NbN film. Antenna gain and noise temperature were investigated at terahertz frequencies for a HEB embedded in either log-spiral or twin-slot feed antenna. Comparison suggests that at frequencies above 3 THz the spiral feed provides better overall performance. At 1.6 THz, a power of 2.5 µW was required from the local oscillator for optimal operation of the HEB mixer. |
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Sorrento, Italy |
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0750309814, 978-0750309813 |
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1505 |
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Meledin, D.; Tong, C.-Y. E.; Blundell, R.; Goltsman, G. |
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Title |
Measurement of intermediate frequency bandwidth of hot electron bolometer mixers at terahertz frequency range |
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Journal Article |
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Year |
2003 |
Publication |
IEEE Microw. Wireless Compon. Lett. |
Abbreviated Journal |
IEEE Microw. Wireless Compon. Lett. |
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Volume |
13 |
Issue |
11 |
Pages |
493-495 |
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Keywords |
waveguide NbN HEB mixers |
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We have developed a new experimental setup for measuring the IF bandwidth of superconducting hot electron bolometer mixers. In our measurement system we use a chopped hot filament as a broadband signal source, and can perform a high-speed IF scan with no loss of accuracy when compared to coherent methods. Using this technique we have measured the 3 dB IF bandwidth of hot electron bolometer mixers, designed for THz frequency operation, and made from 3-4 nm thick NbN film deposited on an MgO buffer layer over crystalline quartz. |
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1531-1309 |
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1509 |
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Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Wilsher, K.; Lo, W.; Okunev, O.; Korneev, A.; Kouminov, P.; Chulkova, G.; Gol’tsman, G. N. |
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Title |
A superconducting single-photon detector for CMOS IC probing |
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Conference Article |
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2003 |
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Proc. 16-th LEOS |
Abbreviated Journal |
Proc. 16-th LEOS |
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2 |
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602-603 |
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NbN SSPD, SNSPD |
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In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA). |
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The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003. |
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1510 |
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Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
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Title |
GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits |
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Journal Article |
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Year |
2003 |
Publication |
Microelectronic Engineering |
Abbreviated Journal |
Microelectronic Engineering |
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Volume |
69 |
Issue |
2-4 |
Pages |
274-278 |
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Keywords |
NbN SSPD, SNSPD, applications |
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We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics. |
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0167-9317 |
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1511 |
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Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
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Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
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Journal Article |
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Year |
2003 |
Publication |
Electron. Lett. |
Abbreviated Journal |
Electron. Lett. |
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Volume |
39 |
Issue |
14 |
Pages |
1086-1088 |
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Keywords |
NbN SSPD, SNSPD, applications |
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The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
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0013-5194 |
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1512 |
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Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R. |
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Title |
Fabrication of nanostructured superconducting single-photon detectors |
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Journal Article |
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2003 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
13 |
Issue |
2 |
Pages |
192-195 |
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NbN SSPD, SNSPD |
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Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed. |
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1558-2515 |
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1515 |
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Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Lo, W.; Wilsher, K. |
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Title |
Infrared picosecond superconducting single-photon detectors for CMOS circuit testing |
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Conference Article |
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2003 |
Publication |
CLEO/QELS |
Abbreviated Journal |
CLEO/QELS |
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Cmv4 |
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Keywords |
NbN SSPD; SNSPD; Infrared; Quantum detectors; Electron beam lithography; Infrared detectors; Infrared radiation; Quantum efficiency; Single photon detectors; Superconductors |
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Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system. |
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Optical Society of America |
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Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
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1518 |
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Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. |
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Title |
Time delay of resistive-state formation in superconducting stripes excited by single optical photons |
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Journal Article |
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2003 |
Publication |
Phys. Rev. B |
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Phys. Rev. B |
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67 |
Issue |
13 |
Pages |
132508 (1 to 4) |
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NbN SSPD, SNSPD |
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We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes. |
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0163-1829 |
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1519 |
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Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
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The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
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Journal Article |
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2003 |
Publication |
J. of communications technol. & electronics |
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J. of communications technol. & electronics |
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48 |
Issue |
6 |
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671-675 |
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NbN HEB mixers |
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Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer. |
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MAIK Nauka/Interperiodica, Birmingham, AL |
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1064-2269 |
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https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) |
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Vakhtomin2003 |
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1522 |
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Author |
Смирнов, К. В. |
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Title |
AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона |
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2003 |
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Тезисы докладов VI Российской конференции по физике полупроводников |
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181 |
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2DEG, AlGaAs/GaAs heterostructures, mixer |
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ФТИ им. А. Ф. Иоффе, Санк-Петербург |
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VI Российской конференции по физике полупроводников (27-31 октября) |
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Notes |
Unconfirmed; Сама конференция, однако, была -- её упоминают: [http://www.nsc.ru/HBC/article.phtml?nid=271&id=17], [https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/lab-20/publikatsii/2003], [http://www.ioffe.ru/sem_tech/sem%5Fteh%5Fmovpe%5Fpublications%5Fru.htm#R2003], [https://istina.ips.ac.ru/collections/828771/] |
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