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Ren Y, Zhang DX, Zhou KM, Miao W, Zhang W, Shi SC, et al. 10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser. AIP Advances. 2019;9(7):075307.
Abstract: We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated.
The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy.
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Moshkova M, Divochiy A, Morozov P, Vakhtomin Y, Antipov A, Zolotov P, et al. High-performance superconducting photon-number-resolving detectors with 86% system efficiency at telecom range. J Opt Soc Am B. 2019;36(3):B20.
Abstract: The use of improved fabrication technology, highly disordered NbN thin films, and intertwined section topology makes it possible to create high-performance photon-number-resolving superconducting single-photon detectors (PNR SSPDs) that are comparable to conventional single-element SSPDs at the telecom range. The developed four-section PNR SSPD has simultaneously an 86±3% system detection efficiency, 35 cps dark count rate, ∼2 ns dead time, and maximum 90 ps jitter. An investigation of the PNR SSPD’s detection efficiency for multiphoton events shows good uniformity across sections. As a result, such a PNR SSPD is a good candidate for retrieving the photon statistics for light sources and quantum key distribution systems.
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Nikogosyan AS, Martirosyan RM, Hakhoumian AA, Makaryan AH, Tadevosyan VR, Goltsman GN, et al. Effect of absorption on the efficiency of terahertz radiation generation in the metal waveguide partially filled with nonlinear crystal LiNbO3, DAST or ZnTe. J Contemp Phys. 2019;54(1):97–104.
Abstract: The influence of terahertz (THz) radiation absorption on the efficiency of generation of coherent THz radiation in the system ‘nonlinear-optical crystal partially filling the cross section of a rectangular metal waveguide’ has been investigated. The efficiency of the nonlinear frequency conversion of optical laser radiation to the THz range depends on the loss in the system and the fulfillment of the phase-matching (FM) condition in a nonlinear crystal. The method of partially filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. The phase matching is achieved by numerical determination of the thickness of the nonlinear crystal, that is the degree of partial filling of the waveguide. The attenuation of THz radiation caused by losses both in the metal walls of the waveguide and in the crystal was studied, taking into account the dimension of the cross section of the waveguide, the degree of partial filling, and the dielectric constant of the crystal. It is shown that the partial filling of the waveguide with a nonlinear crystal results in an increase in the efficiency of generation of THz radiation by an order of magnitude, owing to the decrease in absorption.
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Kovaluyk V, Lazarenko P, Kozyukhin S, An P, Prokhodtsov A, Goltsman G, et al. Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures [abstract]. In: Proc. Amorphous and Nanostructured Chalcogenides. Technical University of Moldova; 2019. p. 47–8.
Abstract: The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.
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Chandrasekar R, Lapin ZJ, Nichols AS, Braun RM, Fountain AW. Photonic integrated circuits for Department of Defense-relevant chemical and biological sensing applications: state-of-the-art and future outlooks. In: Opt. Eng. Vol 58.; 2019. 1.
Abstract: Photonic integrated circuits (PICs), the optical counterpart of traditional electronic integrated circuits, are paving the way toward truly portable and highly accurate biochemical sensors for Department of Defense (DoD)-relevant applications. We introduce the fundamentals of PIC-based biochemical sensing and describe common PIC sensor architectures developed to-date for single-identification and spectroscopic sensor classes. We discuss DoD investments in PIC research and summarize current challenges. We also provide future research directions likely required to realize widespread application of PIC-based biochemical sensors. These research directions include materials research to optimize sensor components for multiplexed sensing; engineering improvements to enhance the practicality of PIC-based devices for field use; and the use of synthetic biology techniques to design new selective receptors for chemical and biological agents.
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Moshkova MA, Divochiy AV, Morozov PV, Antipov AV, Vakhtomin YB, Smirnov KV. Characterization of topologies of superconducting photon number resolving detectors. In: Proc. 8th Int. Conf. Photonics and Information Optics.; 2019. p. 465–6.
Abstract: Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated.
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Елманов ИА, Елманова АВ, Голиков АД, Комракова СА, Каурова НС, Ковалюк ВВ, et al. Способ определения параметров резистов для электронной литографии фотонных интегральных схем на платформе нитрида кремния. In: Proc. IWQO.; 2019. p. 306–8.
Abstract: В работе были измерены толщины резистов ZEP 520A и ma-N 2400 для электронно-лучевой литографии, неразрушающим способом, а также подобран рецепт, обеспечивающий высокое отношение скорости травления нитрида кремния по сравнению с резистом. Работа имеет практическое значение для электронной литографии интегрально-оптических устройств и устройств нанофотоники на основе нитрида кремния.
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Tretyakov I, Shurakov A, Perepelitsa A, Kaurova N, Svyatodukh S, Zilberley T, et al. Silicon room temperature IR detectors coated with Ag2S quantum dots. In: Proc. IWQO.; 2019. p. 369–71.
Abstract: For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
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Bakhvalova T, Belkin ME, Kovalyuk VV, Prokhodtcov AI, Goltsman GN, Sigov AS. Studying key principles for design and fabrication of silicon photonic-based beamforming networks. In: PIERS-Spring.; 2019. p. 745–51.
Abstract: In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array.
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Baksheeva K, Vdovydchenko A, Gorshkov K, Ozhegov R, Kinev N, Koshelets V, et al. Study of human skin radiation in the terahertz frequency range. In: J. Phys.: Conf. Ser. Vol 1410.; 2019. 012076 (1 to 5).
Abstract: The radiation of human skin in the terahertz frequency range under the influence of mental stresses has been studied in the current work. An experimental setup for observation of changes in human skin radiation, which occur under the influence of psychological stresses, by means of a superconducting integrated receiver has been developed. More than 30 volunteers participate in these studies, which allows us to verify presence of correlation between the signals from the superconducting integrated terahertz receiver and other sensors that monitor human mental stress.
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