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Trifonov A, Tong CE, Lobanov Y, Kaurova N, Blundell R, Gol’tsman G. An investigation of the DC and IF performance of silicon-membrane HEB mixer elements. In: Proc. 26th Int. Symp. Space Terahertz Technol.; 2015. 40.
Abstract: We report on our initial development towards a 2x2 multi-pixel HEB waveguide mixer for operation at 1.4 THz. We have successfully fabricated devices comprising an NbN bridge integrated with antenna test structure using a silicon membrane as the supporting substrate. DC measurements of the test chips demonstrate critical current from 0.1 – 1mA depending on the size of device, with T c of around 10 K and ΔTc ~ 0.8 K.
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Bakhvalova T, Belkin ME, Kovalyuk VV, Prokhodtcov AI, Goltsman GN, Sigov AS. Studying key principles for design and fabrication of silicon photonic-based beamforming networks. In: PIERS-Spring.; 2019. p. 745–51.
Abstract: In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array.
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Komrakova S, Kovalyuk V, An P, Golikov A, Rybin M, Obraztsova E, et al. Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012135.
Abstract: In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide.
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Tretyakov I, Shurakov A, Perepelitsa A, Kaurova N, Svyatodukh S, Zilberley T, et al. Silicon room temperature IR detectors coated with Ag2S quantum dots. In: Proc. IWQO.; 2019. p. 369–71.
Abstract: For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
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Elmanova A, An P, Kovalyuk V, Golikov A, Elmanov I, Goltsman G. Study of silicon nitride O-ring resonator for gas-sensing applications. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012124.
Abstract: In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.
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Елманов ИА, Елманова АВ, Голиков АД, Комракова СА, Каурова НС, Ковалюк ВВ, et al. Способ определения параметров резистов для электронной литографии фотонных интегральных схем на платформе нитрида кремния. In: Proc. IWQO.; 2019. p. 306–8.
Abstract: В работе были измерены толщины резистов ZEP 520A и ma-N 2400 для электронно-лучевой литографии, неразрушающим способом, а также подобран рецепт, обеспечивающий высокое отношение скорости травления нитрида кремния по сравнению с резистом. Работа имеет практическое значение для электронной литографии интегрально-оптических устройств и устройств нанофотоники на основе нитрида кремния.
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Zubkova E, An P, Kovalyuk V, Korneev A, Ferrari S, Pernice W, et al. Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform. In: J. Phys.: Conf. Ser. Vol 917.; 2017. 062042.
Abstract: We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. These waveguides would serve as efficient notch-filters with the desired characteristics. Transmission spectra of the fabricated integrated notch filters have been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. Performance of the filters has been studied depending on different parameters, such as pitch, filling factor, and height of teeth of the Bragg grating
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Гершензон ЕМ, Семенов ИТ, Фогельсон МС. О механизме динамического сужения линии ЭПР доноров фосфора в кремнии. Физика и техника полупроводников. 1984;18(3):421–5.
Abstract: Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам.
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Shurakov A, Prikhodko A, Mikhailov D, Belikov I, Kaurova N, Voronov B, et al. Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012156.
Abstract: In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.
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Гершензон ЕМ, Мельников АП, Рабинович РИ, Смирнова ВБ. О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси. Физика и техника полупроводников. 1983;17(3):499–501.
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