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Zhang J, Boiadjieva N, Chulkova G, Deslandes H, Gol'tsman GN, Korneev A, et al. Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors. Electron Lett. 2003;39(14):1086–8.
Abstract: The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
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Sobolewski R, Zhang J, Slysz W, Pearlman A, Verevkin A, Lipatov A, et al. Ultrafast superconducting single-photon optical detectors. In: Spigulis J, Teteris J, Ozolinsh M, Lusis A, editors. Proc. SPIE. Vol 5123. SPIE; 2003. p. 1–11.
Abstract: We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography.
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Verevkin AA, Pearlman A, Slysz W, Zhang J, Sobolewski R, Chulkova G, et al. Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications. In: Donkor E, Pirich AR, Brandt HE, editors. Proc. SPIE. Vol 5105. SPIE; 2003. p. 160–70.
Abstract: We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10-18 W/Hz1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed.
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Gol’tsman GN, Smirnov K, Kouminov P, Voronov B, Kaurova N, Drakinsky V, et al. Fabrication of nanostructured superconducting single-photon detectors. IEEE Trans Appl Supercond. 2003;13(2):192–5.
Abstract: Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed.
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Zhang J, Pearlman A, Slysz W, Verevkin A, Sobolewski R, Okunev O, et al. Infrared picosecond superconducting single-photon detectors for CMOS circuit testing. In: CLEO/QELS. Optical Society of America; 2003. Cmv4.
Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system.
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Zhang J, Słysz W, Pearlman A, Verevkin A, Sobolewski R, Okunev O, et al. Time delay of resistive-state formation in superconducting stripes excited by single optical photons. Phys Rev B. 2003;67(13):132508 (1 to 4).
Abstract: We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.
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Baubert J, Salez M, Delorme Y, Pons P, Goltsman G, Merkel H, et al. Membrane-based HEB mixer for THz applications. In: Chiao J-C, Varadan VK, Cané C, editors. Proc. SPIE. Vol 5116. SPIE; 2003. p. 551–62.
Abstract: We report in this paper a new concept for 2.7 THz superconducting Niobium nitride (NbN) Hot-Electron Bolometer mixer (HEB). The membrane process was developped for space telecommnunication applications a few years ago and the HEB mixer concept is now considered as the best choice for low-noise submillimeter-wave frequency heterodyne receivers. The idea is then to join these two technologies. The novel fabrication scheme is to fabricate a NbN HEB mixer on a 1 μm thick stress-less Si3N4/SiO2 membrane. This seems to present numerous improvements concerning : use at higher RF frequencies, power coupling efficiency, HEB mixer sensitivity, noise temperature, and space applications. This work is to be continued within the framework of an ESA TRP project, a 2.7 THz heterodyne camera with numerous applications including a SOFIA airborne receiver. This paper presents the whole fabrication process, the validation tests and preliminary results. Membrane-based HEB mixer theory is currently being investigated and further tests such as heterodyne and Fourier transform spectrometry measurement are planed shortly.
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Cherednichenko S, Khosropanah P, Adam A, Merkel HF, Kollberg EL, Loudkov D, et al. 1.4- to 1.7-THz NbN hot-electron bolometer mixer for the Herschel space observatory. In: Phillips TG, Zmuidzinas J, editors. Proc. SPIE. Vol 4855. SPIE; 2003. p. 361–70.
Abstract: NbN hot- electron bolometer mixers have reached the level of 10hv/k in terms of the input noise temperature with the noise bandwidth of 4-6 GHz from subMM band up to 2.5 THz. In this paper we discuss the major characteristics of this kind of receiver, i.e. the gain and the noise bandwidth, the noise temperature in a wide RF band, bias regimes and optimisation of RF coupling to the quasioptical mixer. We present the status of the development of the mixer for Band 6 Low for Herschel Telescope.
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Vakhtomin YB, Finkel MI, Antipov SV, Smirnov KV, Kaurova NS, Drakinskii VN, et al. The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J of communications technol & electronics. 2003;48(6):671–5.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Смирнов КВ. AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона [abstract]. In: Тезисы докладов VI Российской конференции по физике полупроводников.; 2003. 181.
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