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Doi Y, Wang Z, Ueda T, Nickels P, Komiyama S, Patrashin M, et al. CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument. SPICA. 2009;(SPICA Workshop 2009).
Abstract: We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors.
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Cao Q, Yoon SF, Tong CZ, Ngo CY, Liu CY, Wang R, et al. Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers. Appl Phys Lett. 2009;95(19):3.
Abstract: The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
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Driessen EFC. Coupling light to periodic nanostructures. Fac Scien, Leiden Un. 2009:144.
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Wang Z, Miki S, Fujiwara M. Superconducting nanowire single-photon detectors for quantum information and communications. IEEE J. Sel. Topics Quantum Electron.. 2009;15(6):1741–7.
Abstract: Superconducting nanowire single-photon detectors (SNSPDs or SSPD) are highly promising devices in the growing field of quantum information and communications technology. We have developed a practical SSPD system with our superconducting thin films and devices fabrication, optical coupling packaging, and cryogenic technology. The SSPD system consists of six-channel SSPD devices and a compact Gifford-McMahon (GM) cryocooler, and can operate continuously on 100 V ac power without the need for any cryogens. The SSPD devices were fabricated from high-quality niobium nitride (NbN) ultrathin films that were epitaxially grown on single-crystal MgO substrates. The packaged SSPD devices were temperature stabilized to 2.96 K ± 10 mK. The system detection efficiency for an SSPD device with an area of 20 × 20 ¿m2 was found to be 2.6% and 4.5% at wavelengths of 1550 and 1310 nm, respectively, at a dark count rate of 100 Hz, and a jitter of 100 ps full-width at half maximum. We also performed ultrafast BB84 quantum key distribution (QKD) field testing and entanglement-based QKD experiments using these SSPD devices.
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Yang JKW, Kerman AJ, Dauler EA, Cord B, Anant V, Molnar RJ, et al. Suppressed critical current in superconducting nanowire single-photon detectors with high fill-factors. IEEE Trans. Appl. Supercond.. 2009;19(3):318–22.
Abstract: In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor.
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Hadfield RH. Single-photon detectors for optical quantum information applications. Nature Photonics. 2009;3:696–705.
Abstract: The past decade has seen a dramatic increase in interest in new single-photon detector technologies. A major cause of this trend has undoubtedly been the push towards optical quantum information applications such as quantum key distribution. These new applications place extreme demands on detector performance that go beyond the capabilities of established single-photon detectors. There has been considerable effort to improve conventional photon-counting detectors and to transform new device concepts into workable technologies for optical quantum information applications. This Review aims to highlight the significant recent progress made in improving single-photon detector technologies, and the impact that these developments will have on quantum optics and quantum information science.
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Hu X, Zhong T, White JE, Dauler EAN Faraz, Herder CH, Wong FNC, et al. Fiber-coupled nanowire photon counter at 1550 nm with 24% system detection efficiency. Opt Lett. 2009;34(23):3607–9.
Abstract: We developed a fiber-coupled superconducting nanowire single-photon detector system in a close-cycled cryocooler and achieved 24% and 22% system detection efficiencies at wavelengths of 1550 and 1315 nm, respectively. The maximum dark count rate was ~1000 counts/s.
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Kerman AJ, Yang JKW, Molnar RJ, Dauler EA, Berggren KK. Electrothermal feedback in superconducting nanowire single-photon detectors. Phys Rev B. 2009;79(10):4.
Abstract: We investigate the role of electrothermal feedback in the operation of superconducting nanowire single-photon detectors (SNSPDs). It is found that the desired mode of operation for SNSPDs is only achieved if this feedback is unstable, which happens naturally through the slow electrical response associated with their relatively large kinetic inductance. If this response is sped up in an effort to increase the device count rate, the electrothermal feedback becomes stable and results in an effect known as latching, where the device is locked in a resistive state and can no longer detect photons. We present a set of experiments which elucidate this effect and a simple model which quantitatively explains the results.
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Venkatasubramanian C, Cabarcos OM, Allara DLH Mark W., Ashok S. Correlation of temperature response and structure of annealed VOx thin films for IR detector applications. J. Vac. Sci. Technol. A. 2009;27(4):6.
Abstract: The effects of thermal annealing on vanadium oxide (VOx) thin films prepared by pulsed-dc magnetron sputtering were studied to explore methods of improving the efficiency of uncooled IR imaging microbolometers, particularly with respect to maximizing the temperature coefficients of resistance (TCR) (typically ~2%) while minimizing resistivity values (typically 0.05–5 Ω cm). Since high TCR values are usually associated with high resistivities, the experiments were designed to find processing conditions that provide an optimal balance in these properties and to then determine the underlying structural correlations which would enable rational design of thin films for this specific application. VOx films of different compositions were deposited by pulsed-dc reactive sputtering from a vanadium target at different oxygen flow rates. The deposited films were further modified by annealing in inert (nitrogen) and oxidizing (oxygen) atmospheres at four different temperatures for 10, 20, or 30 min at a time. The resistivities of the as-deposited films ranged from 0.2 to 13 Ω cm and the TCR values varied from –1.6% to –2.2%. Depending on the exact annealing conditions, several orders of magnitude change in resistance and significant variations in TCR were observed. Optimal results were obtained with annealing in a nitrogen atmosphere. Structural characterization by x-ray diffraction, field emission scanning electron microscopy, atomic force microscopy, and Raman spectroscopy indicated changes in the film crystallinity and phase for annealing conditions over 300 °C with the onset and extent of the changes dependent on which annealing atmosphere was used.
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Yates SJC, Baryshev AM, Baselmans JJA, Klein B, Güsten R. Fast Fourier transform spectrometer readout for large arrays of microwave kinetic inductance detectors. Appl Phys Lett. 2009;95(4):3.
Abstract: Microwave kinetic inductance detectors have great potential for large, very sensitive detector arrays for use in, for example, submillimeter imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing ~1000 s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of fast Fourier transform spectrometer readout, showing no deterioration of the noise performance compared to the low noise analog mixing while allowing high multiplexing ratios.
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