Romanov NR, Zolotov PI, Smirnov KV. Development of disordered ultra-thin superconducting vanadium nitride films. In: Proc. 8th Int. Conf. Photonics and Information Optics.; 2019. p. 425–6.
Abstract: We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained.
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Zolotov PI, Vakhtomin YB, Divochiy AV, Seleznev VA, Smirnov KV. Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons. Proc 5th Int Conf Photonics and Information Optics. 2016:115–6.
Abstract: This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures.
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Zolotov PI, Semenov AV, Divochiy AV, Goltsman GN, Romanov NR, Klapwijk TM. Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN. IEEE Trans Appl Supercond. 2021;31(5):1–5.
Abstract: We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated.
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Samsonova AS, Zolotov PI, Baeva EM, Lomakin AI, Titova NA, Kardakova AI, et al. Signatures of surface magnetic disorder in niobium films. IEEE Trans Appl Supercond. 2021;31(5):1–5.
Abstract: We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder ( kFl≈150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm −2 , which is in agreement with the previously reported data for Nb films.
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Baeva EM, Sidorova MV, Korneev AA, Smirnov KV, Divochy AV, Morozov PV, et al. Thermal properties of NbN single-photon detectors. Phys Rev Applied. 2018;10(6):064063 (1 to 8).
Abstract: We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.
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