Records |
Author |
Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Wilsher, K.; Lo, W.; Okunev, O.; Korneev, A.; Kouminov, P.; Chulkova, G.; Gol’tsman, G. N. |
Title |
A superconducting single-photon detector for CMOS IC probing |
Type |
Conference Article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
2003 |
Publication |
Proc. 16-th LEOS |
Abbreviated Journal |
Proc. 16-th LEOS |
Volume |
2 |
Issue |
|
Pages |
602-603 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA). |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003. |
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1510 |
Permanent link to this record |
|
|
|
Author |
Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
Title |
GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits |
Type |
Journal Article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
2003 |
Publication |
Microelectronic Engineering |
Abbreviated Journal |
Microelectronic Engineering |
Volume |
69 |
Issue |
2-4 |
Pages |
274-278 |
Keywords |
NbN SSPD, SNSPD, applications |
Abstract |
We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0167-9317 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1511 |
Permanent link to this record |
|
|
|
Author |
Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
Title |
Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
Type |
Journal Article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
2003 |
Publication |
Electron. Lett. |
Abbreviated Journal |
Electron. Lett. |
Volume |
39 |
Issue |
14 |
Pages |
1086-1088 |
Keywords |
NbN SSPD, SNSPD, applications |
Abstract |
The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0013-5194 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1512 |
Permanent link to this record |
|
|
|
Author |
Sobolewski, R.; Zhang, J.; Slysz, W.; Pearlman, A.; Verevkin, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Goltsman, G. N. |
Title |
Ultrafast superconducting single-photon optical detectors |
Type |
Conference Article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
2003 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
5123 |
Issue |
|
Pages |
1-11 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
SPIE |
Place of Publication |
|
Editor |
Spigulis, J.; Teteris, J.; Ozolinsh, M.; Lusis, A. |
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
Advanced Optical Devices, Technologies, and Medical Applications |
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1513 |
Permanent link to this record |
|
|
|
Author |
Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Lo, W.; Wilsher, K. |
Title |
Infrared picosecond superconducting single-photon detectors for CMOS circuit testing |
Type |
Conference Article |
Year ![sorted by Year field, ascending order (up)](img/sort_asc.gif) |
2003 |
Publication |
CLEO/QELS |
Abbreviated Journal |
CLEO/QELS |
Volume |
|
Issue |
|
Pages |
Cmv4 |
Keywords |
NbN SSPD; SNSPD; Infrared; Quantum detectors; Electron beam lithography; Infrared detectors; Infrared radiation; Quantum efficiency; Single photon detectors; Superconductors |
Abstract |
Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
Optical Society of America |
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1518 |
Permanent link to this record |