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Author Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. url  openurl
  Title Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца Type Journal Article
  Year 1985 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 19 Issue 9 Pages 1696-1698  
  Keywords uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation  
  Abstract  
  Address  
  Corporate Author Thesis (up)  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1760  
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Author Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. url  openurl
  Title О механизме динамического сужения линии ЭПР доноров фосфора в кремнии Type Journal Article
  Year 1984 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 18 Issue 3 Pages 421-425  
  Keywords Si, phosphorus donors, EPR  
  Abstract Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам.  
  Address  
  Corporate Author Thesis (up)  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1761  
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Author Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. url  openurl
  Title Об одном способе определения концентрации глубоких примесей в германии Type Journal Article
  Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 17 Issue 10 Pages 1896-1898  
  Keywords Ge, deep impurities  
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  Address  
  Corporate Author Thesis (up)  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1762  
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Author Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. url  openurl
  Title Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда Type Journal Article
  Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 17 Issue 10 Pages 1873-1876  
  Keywords compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance  
  Abstract  
  Address  
  Corporate Author Thesis (up)  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1763  
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Author Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. url  openurl
  Title О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси Type Journal Article
  Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 17 Issue 3 Pages 499-501  
  Keywords shallow neutral impurities, capture, inverse distribution function, Si  
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  Corporate Author Thesis (up)  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1764  
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Author Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. url  doi
openurl 
  Title Electron–phonon interaction in disordered conductors Type Journal Article
  Year 1999 Publication Phys. Rev. B Condens. Matter Abbreviated Journal Phys. Rev. B Condens. Matter  
  Volume 263-264 Issue Pages 190-192  
  Keywords disordered conductors, electron-phonon interaction  
  Abstract The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.  
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  Corporate Author Thesis (up)  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1765  
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Author Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. url  doi
openurl 
  Title Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate Type Journal Article
  Year 1997 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 56 Issue 16 Pages 10089-10096  
  Keywords disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity  
  Abstract The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1766  
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Author Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. url  doi
openurl 
  Title Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films Type Conference Article
  Year 1996 Publication Czech J. Phys. Abbreviated Journal Czech J. Phys.  
  Volume 46 Issue S5 Pages 2489-2490  
  Keywords Al, Be, Nb films  
  Abstract The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0011-4626 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1767  
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Author Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. url  openurl
  Title Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons Type Journal Article
  Year 1975 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 40 Issue 2 Pages 311-315  
  Keywords Ge, cyclotron resonance  
  Abstract Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1768  
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Author Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. url  openurl
  Title Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions Type Journal Article
  Year 1976 Publication Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников Abbreviated Journal Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников  
  Volume 10 Issue Pages 1379-1383  
  Keywords Ge, cyclotron resonance, charged impurities,  
  Abstract  
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  Corporate Author Thesis (up)  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1772  
Permanent link to this record
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