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Author Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. url  openurl
  Title Absorption spectra in electron transitions between excited states of impurities in germanium Type Journal Article
  Year 1975 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume (down) 22 Issue 4 Pages 95-97  
  Keywords Ge, impurities, excited states, absorption spectra  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1773  
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Author Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. url  openurl
  Title Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ Type Journal Article
  Year 1986 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume (down) 20 Issue 1 Pages 99-103  
  Keywords n-Ge, Hubbard upper zone conductivity, negative magnetoresistance  
  Abstract В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph.  
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  Notes Approved no  
  Call Number Serial 1759  
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Author Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. url  doi
openurl 
  Title Helicity-sensitive plasmonic terahertz interferometer Type Journal Article
  Year 2020 Publication Nano Lett. Abbreviated Journal Nano Lett.  
  Volume (down) 20 Issue 10 Pages 7296-7303  
  Keywords graphene, plasmonic interferometer, radiation helicity, terahertz radiation  
  Abstract Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials.  
  Address CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland  
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  ISSN 1530-6984 ISBN Medium  
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  Notes PMID:32903004 Approved no  
  Call Number Serial 1781  
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Author Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. url  openurl
  Title Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца Type Journal Article
  Year 1985 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume (down) 19 Issue 9 Pages 1696-1698  
  Keywords uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation  
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  Notes Approved no  
  Call Number Serial 1760  
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Author Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. url  openurl
  Title О механизме динамического сужения линии ЭПР доноров фосфора в кремнии Type Journal Article
  Year 1984 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume (down) 18 Issue 3 Pages 421-425  
  Keywords Si, phosphorus donors, EPR  
  Abstract Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам.  
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  Notes Approved no  
  Call Number Serial 1761  
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Author Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. url  openurl
  Title Об одном способе определения концентрации глубоких примесей в германии Type Journal Article
  Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume (down) 17 Issue 10 Pages 1896-1898  
  Keywords Ge, deep impurities  
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  Notes Approved no  
  Call Number Serial 1762  
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Author Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. url  openurl
  Title Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда Type Journal Article
  Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume (down) 17 Issue 10 Pages 1873-1876  
  Keywords compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance  
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  Notes Approved no  
  Call Number Serial 1763  
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Author Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. url  openurl
  Title О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси Type Journal Article
  Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume (down) 17 Issue 3 Pages 499-501  
  Keywords shallow neutral impurities, capture, inverse distribution function, Si  
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  Notes Approved no  
  Call Number Serial 1764  
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Author Elant'ev, A. I.; Karasik, B. S. openurl 
  Title Effect of high-frequency current on Nb superconductive film in resistive state Type Journal Article
  Year 1989 Publication Sov. J. Low Temp. Phys. Abbreviated Journal Sov. J. Low Temp. Phys.  
  Volume (down) 15 Issue 7 Pages 379-383  
  Keywords Nb HEB  
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  Notes Approved no  
  Call Number Serial 882  
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Author Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. url  doi
openurl 
  Title Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes Type Journal Article
  Year 2015 Publication Nano Lett. Abbreviated Journal Nano Lett.  
  Volume (down) 15 Issue 12 Pages 7859-7866  
  Keywords carbon nanotubes, CNT, tunable superconductivity, van Hove singularities  
  Abstract Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube.  
  Address Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States  
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  Notes PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 Approved no  
  Call Number Serial 1782  
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