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	Author	Gershenzon, E. M.; Gol'tsman, G. N.
	Title	Effect of electromagnetic radiation on a superconductor in a magnetic field			Type	Conference Article
	Year	1988	Publication	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya	Abbreviated Journal	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
	Volume	52	Issue	3	Pages	449-451
	Keywords
	Abstract	The effect of electromagnetic radiation on thin superconducting films of Nb with a large number of static defects is investigated experimentally for the case where the film is in the resistive state due to an applied magnetic field and transport current. The results obtained are found to be well described by a model of spatially homogeneous electron heating. It is noted that the results obtained here for Nb films are also valid for Al, NbN, and MoRe films.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0367-6765	ISBN		Medium
	Area		Expedition		Conference	4th Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Tallin, Estonian SSR, Apr. 1987
	Notes				Approved	no
	Call Number				Serial	1702
Permanent link to this record



	Author	Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semyonov, A. D.; Sergeev, A. V.
	Title	Heating of electrons in superconductor in the resistive state due to electromagnetic radiation			Type	Journal Article
	Year	1984	Publication	Solid State Communications	Abbreviated Journal	Solid State Communications
	Volume	50	Issue	3	Pages	207-212
	Keywords	Nb HEB
	Abstract	The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0038-1098	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1709
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	Author	Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Heating of electrons in a superconductor in the resistive state by electromagnetic radiation			Type	Journal Article
	Year	1984	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	59	Issue	2	Pages	442-450
	Keywords	Nb HEB
	Abstract	The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ phisix @			Serial	983
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	Author	Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E.
	Title	Amplification of a Raman scattering signal by carbon nanotubes			Type	Journal Article
	Year	2018	Publication	Dokl. Phys.	Abbreviated Journal	Dokl. Phys.
	Volume	63	Issue	12	Pages	496-498
	Keywords	carbon nanotubes, CNT, Raman scattering, RLS
	Abstract	The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1028-3358	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1775
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	Author	Nikoghosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V.
	Title	Effect of absorption on the efficiency of THz radiation generation in a nonlinear crystal placed into a waveguide			Type	Journal Article
	Year	2018	Publication	Armenian J. Phys.	Abbreviated Journal	Armenian J. Phys.
	Volume	11	Issue	4	Pages	257-262
	Keywords	THz, waveguide, nonlinear crystal
	Abstract	The effect of THz radiation absorption on the efficiency of generation of coherent THz radiation in a nonlinear optical crystal placed into a metal rectangular waveguide is studied. The efficiency of the nonlinear conversion of optical laser radiation to the THz band is also a function of the phase-matching (PM) condition inside the nonlinear crystal. The method of partial filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. Phase matching was obtained by the proper choice of the thickness of the nonlinear crystal, namely the degree of partial filling of the waveguide. We have studied the THz radiation attenuation caused by the losses in both the metal walls of the waveguide and in the crystal, taking into account the dimension of the cross section of the waveguide, the degree of partial filling and its dielectric constant.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1829-1171	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1291
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	Author	Gol'tsman, G. N.; Karasik, B. S.; Svechnikov, S. I.; Gershenzon, E. M.; Ekström, H.; Kollberg E.
	Title	Noise temperature of NbN hot—electron quasioptical superconducting mixer in 200-700 GHz range			Type	Abstract
	Year	1995	Publication	Proc. 6^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 6^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	268
	Keywords	NbN HEB mixers, noise temperature
	Abstract	The electron heating effect in superconducting films is becoming very attractive for the development of THz range mixers because of the absence of frequency limitations inherent in the bolometric mechanism. However, the evidence for the spectral dependence of the position of optimal operating point has been found recently for NbN thin film devices 1.2 • The effect is presumably attributed to the variation in the absorption of radiation depending on the frequency. Since the resistive state is not spatially uniform the coupling efficiency of the mixer device with radiation can be different for frequencies larger than Zeilh and those smaller than 2Alh (d is the effective superconducting gap in the resistive state). To study the effect more thoroughly we have investigated the noise temperature of quasioptical NbN mixer device with broken hue tapered slot antenna in the frequency range 200-700 GHz. The device consists of several (5-10) parallel strips 1 jim wide and 6-7 tun thick made from NbN film on Si0 2 -Si 3 N 4 -Si membrane. The strips are connected with the gold contacts of the slot-line antenna which serves both as bias and IF leads. We used backward wave oscillators as LO sources and a standard hot/cold load technique for noise temperature measurements. The frequency dependence of noise temperature is mainly determined by two factors: frequency properties of the antenna and frequency dependence of the NbN film impedance. To separate both factors we monitored the frequency dependence of the device responsivity in the detector mode at a higher temperature within the superconducting transition where the impedance of NbN film is close to its normal resistance. In this case the impedance of the device itself is frequency independent. The experimental results will be reported at the Symposium. 1. G. Gollsman, S. Jacobsson, H. EkstrOm, B. Karasik, E. Kollberg, and E. Gershenzon, “Slot-line tapered antenna with NbN hot electron mixer for 300-360 GHz operation,” Proc of the 5th Int. Symp. on Space Terahertz Technology, pp. 209-213a, May 10-12,1994. 2. B.S. Karasik, G.N. Gol i tsman, B.M. Voronov, S.I. Svechnikov, E.M. Gershenzon, H. Ekstrom, S. Jacobsson, E. Kollberg, and K.S. Yngvesson, “Hot electron quasioptical NbN superconducting mixer,” presented at the ASC94, submitted to IEEE Trans. on Appl. Superconductivity.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1627
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	Author	Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M.
	Title	Electron–phonon interaction in disordered conductors			Type	Journal Article
	Year	1999	Publication	Phys. Rev. B Condens. Matter	Abbreviated Journal	Phys. Rev. B Condens. Matter
	Volume	263-264	Issue		Pages	190-192
	Keywords	disordered conductors, electron-phonon interaction
	Abstract	The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4526	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1765
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	Author	Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
	Title	Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures			Type	Journal Article
	Year	1995	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	61	Issue	7	Pages	591-595
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grﬁneisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a signiﬁcant discrepancy between the experimental and theoretical re-sults.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1624
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	Author	Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I.
	Title	Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation			Type	Journal Article
	Year	2021	Publication	Adv. Electron. Mater.	Abbreviated Journal	Adv. Electron. Mater.
	Volume	7	Issue	3	Pages	2000872
	Keywords	SWCNT transistors
	Abstract	The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2199-160X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1843
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	Author	Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A.
	Title	Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures			Type	Abstract
	Year	2019	Publication	Proc. Amorphous and Nanostructured Chalcogenides	Abbreviated Journal	Proc. Amorphous and Nanostructured Chalcogenides
	Volume		Issue		Pages	47-48
	Keywords	optical waveguides
	Abstract	The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.
	Address
	Corporate Author				Thesis
	Publisher	Technical University of Moldova	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Poster			Approved	no
	Call Number				Serial	1281
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	Author	Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G.
	Title	Luminescence of colloidal Ag₂S/ZnS core/shell quantum dots capped with thioglycolic acid			Type	Journal Article
	Year	2020	Publication	J. Luminescence	Abbreviated Journal	J. Luminescence
	Volume	220	Issue		Pages	117008 (1 to 7)
	Keywords	Ag2S QD, quantum dots
	Abstract	The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-2313	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1267
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	Author	Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V.
	Title	Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si₃N₄ / SiO₂ membranes			Type	Journal Article
	Year	2007	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
	Volume	101	Issue	12	Pages	124508 (1 to 6)
	Keywords	HEB, mixer, membrane
	Abstract	The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	560
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	Author	Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D.
	Title	Fast-response superconducting electron bolometer			Type	Journal Article
	Year	1989	Publication	Pisma v Zhurnal Tekhnicheskoi Fiziki	Abbreviated Journal	Pisma v Zhurnal Tekhnicheskoi Fiziki
	Volume	15	Issue	3	Pages	88-92
	Keywords	Nb HEB
	Abstract	The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1694
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	Author	Gol’tsman, G. N.
	Title	The “Millimetron” project, a future space telescope mission			Type	Abstract
	Year	2007	Publication	Proc. 18^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 18^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	255
	Keywords	Millimetron space observatory, VLBI
	Abstract	The goal of the Millimetron project is to develop a space observatory operating in the millimeter, sub-millimeter and infrared wavelength ranges using a 12-m actively cooled telescope in a single-dish mode and as an interferometer with the space-ground and space-space baselines (the later after the launch of the second identical space telescope). The Millimetron’s main reflector and other optics will be cooled down to 4K thus enabling astronomical observations with super high sensitivity in MM and subMM (down to nanoJansky level). Heterodyne observations in an interferometer mode at frequencies 0.1-1 THz will provide super high angular resolution. The main instruments, planned to be installed are wide-range imaging arrays, radiometers with spectrometers and polarimeters, VLBI heterodyne receivers, and Mikelson type interferometer devices. Wide-range MM and subMM imaging arrays and spectrometers will be based on a superconducting hot electron direct detectors with Andreev mirrors operating at 0.1 K. Such detectors are the best candidates to reach the noise equivalent power level of 10 -19 -10 -20 W/√Hz. Heterodyne receivers will be both SIS based superconducting integrated receiver with flux-flow oscillator as LO (0.1-0.9 THz range) and HEB based receivers using multiplied Gunn oscillator as LO for 1-2 THz range and quantum cascade lasers as LO for 2-5 THz range. For observations in middle IR region there will be installed large arrays of superconducting single photon detectors, providing imaging with very high dynamic range and ultimate sensitivity.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1422
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	Author	Kawamura, J.; Blundell, R.; Tong, C.‐yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B.
	Title	Performance of NbN lattice‐cooled hot‐electron bolometric mixers			Type	Journal Article
	Year	1996	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
	Volume	80	Issue	7	Pages	4232-4234
	Keywords	NbN HEB mixers
	Abstract	The heterodyne performance of lattice‐cooled hot‐electron bolometric mixers is measured at 200 GHz. Superconducting thin‐film niobium nitride strips with ∼5 nm thickness are used as waveguide mixer elements. A double‐sideband receiver noise temperature of 750 K at 244 GHz is measured at an intermediate frequency centered at 1.5 GHz with 500 MHz bandwidth and with 4.2 K device temperature. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator power required by the mixer is about 0.5 μW. The mixer is linear to within 1 dB up to an input power level 6 dB below the local oscillator power. A receiver incorporating a hot‐electron bolometric mixer was used to detect molecular line emission in a laboratory gascell. This experiment unambiguously confirms that the receiver noise temperature determined from Y‐factor measurements reflects the true heterodyne sensitivity.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1607
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	Author	Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R.
	Title	High resolution THz gas spectrometer based on semiconductor and superconductor devices			Type	Conference Article
	Year	2017	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	132	Issue		Pages	02001 (1 to 2)
	Keywords	NbN HEB mixers, detectors, THz spectroscopy
	Abstract	The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1328
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	Author	Aksaev, E. E.; Gershenzon, E.M.; Gol'tsman, G. N.; Mirskij, G. I.; Semenov, A. D.
	Title	Submillimetric spectrometer-relaxometer based on backward-wave tubes with picosecond time resolution			Type	Journal Article
	Year	1991	Publication	Pribory i Tekhnika Eksperimenta	Abbreviated Journal	Pribory i Tekhnika Eksperimenta
	Volume	34	Issue	2	Pages	125-131
	Keywords	BWO, applications
	Abstract	The high-sensitive automatic spectrometer-relaxometer based on backward-wave tubes in the range of 4÷0.25 mm was described permitting to study the response kinetics of sample under investigation in any point of this range with the resolution time of 10-11 s. The relaxation measurements were conducted using oscillation beats of two adequate tubes, the frequency of one of them was fixed, while that of the other one was changeable. The amplitude-frequency characteristic of the response under the conditions of synchronous reception was recorded at beat frequency variation from 107 to 1010 Hz. The high sensitivity was reached by decreasing the device recording band down to 100 Hz in the whole measuring range.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0032-8162	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1683
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	Author	Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M.
	Title	Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon			Type	Journal Article
	Year	2001	Publication	Jetp Lett.	Abbreviated Journal	Jetp Lett.
	Volume	73	Issue	1	Pages	44-47
	Keywords	uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field
	Abstract	The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1752
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	Author	Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A.
	Title	Technology for NbN HEB based multipixel matrix of THz range			Type	Conference Article
	Year	2018	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	195	Issue		Pages	05011
	Keywords	NbN HEB
	Abstract	The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1318
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	Author	Nikogosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V.
	Title	Effect of absorption on the efficiency of terahertz radiation generation in the metal waveguide partially filled with nonlinear crystal LiNbO3, DAST or ZnTe			Type	Journal Article
	Year	2019	Publication	J. Contemp. Phys.	Abbreviated Journal	J. Contemp. Phys.
	Volume	54	Issue	1	Pages	97-104
	Keywords	nonlinear crystal, THz, waveguide
	Abstract	The influence of terahertz (THz) radiation absorption on the efficiency of generation of coherent THz radiation in the system ‘nonlinear-optical crystal partially filling the cross section of a rectangular metal waveguide’ has been investigated. The efficiency of the nonlinear frequency conversion of optical laser radiation to the THz range depends on the loss in the system and the fulfillment of the phase-matching (FM) condition in a nonlinear crystal. The method of partially filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. The phase matching is achieved by numerical determination of the thickness of the nonlinear crystal, that is the degree of partial filling of the waveguide. The attenuation of THz radiation caused by losses both in the metal walls of the waveguide and in the crystal was studied, taking into account the dimension of the cross section of the waveguide, the degree of partial filling, and the dielectric constant of the crystal. It is shown that the partial filling of the waveguide with a nonlinear crystal results in an increase in the efficiency of generation of THz radiation by an order of magnitude, owing to the decrease in absorption.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1068-3372	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1289
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	Author	Schwaab, G.W.; Auen, K.; Bruendermann, E.; Feinaeugle, R.; Gol’tsman, G.N.; Huebers, H.-W.; Krabbe, A.; Roeser, H.-P.; Sirmain, G.
	Title	2- to 6-THz heterodyne receiver array for the Stratospheric Observatory for Infrared Astronomy (SOFIA)			Type	Conference Article
	Year	1998	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	3357	Issue		Pages	85-96
	Keywords	NbN HEB mixers, applications, stratospheric observatory, airborne
	Abstract	The Institute of Space Sensor Technology of the German Aerospace Center (DLR) is developing a heterodyne array receiver for the frequency range 2 to 6 THz for the Stratospheric Observatory for Infrared Astronomy (SOFIA). Key science issues in that frequency range are the observation of lines of atoms [e.g. (OI)], ions [e.g. (CII), (NII)], and molecules (e.g. OH, HD, CO) with high spectral resolution to study the dynamics and evolution of galactic and extragalactic objects. Long term goal is the development of an integrated array heterodyne receiver with superconducting hot electron bolometric (HEB) mixers and p-type Ge or Si lasers as local oscillators. The first generation receiver will be composed of HEB mixers in a 2 pixel 2 polarization array which will be pumped by a gas laser local oscillator. Improved Schottky diode mixers are the backup solution for the HEBs. The state of the art of HEB mixer and p-type Ge laser technology are described as well as possible improvements in the ’conventional’ optically pumped far-infrared laser and Schottky diode mixer technology. Finally, the frequency coverage of the first generation heterodyne receiver for some important astronomical transitions is discussed. The expected sensitivity is compared to line fluxes measured by the ISO satellite.
	Address
	Corporate Author				Thesis
	Publisher	SPIE	Place of Publication		Editor	Phillips, T.G.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Advanced Technology MMW, Radio, and Terahertz Telescopes
	Notes				Approved	no
	Call Number				Serial	1583
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	Author	Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Kovalyuk, V. V.; Gorshkov, K. N.; Kazakov, A. Y.; Ivanov, S. Y.; Egorov, A. Y.; Sakseev, D. A.; Konnikov, S. G.
	Title	Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices			Type	Journal Article
	Year	2011	Publication	Tech. Phys.	Abbreviated Journal	Tech. Phys.
	Volume	56	Issue	6	Pages	826-830
	Keywords	GaAs/AlGaAs superlattices
	Abstract	The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7842	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1214
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	Author	Lusche, Robert; Semenov, Alexey; Huebers, Heinz-Willhelm; Ilin, Konstantin; Siegel, Michael; Korneeva, Yuliya; Trifonov, Andrey; Korneev, Alexander; Goltsman, Gregory
	Title	Effect of the wire geometry and an externally applied magnetic field on the detection efficiency of superconducting nanowire single-photon detectors			Type	Abstract
	Year	2013	Publication	INIS	Abbreviated Journal	INIS
	Volume	46	Issue	8	Pages	1-3
	Keywords	TaN, NbN SSPD, SNSPD
	Abstract	The interest in single-photon detectors in the near-infrared wavelength regime for applications, e.g. in quantum cryptography has immensely increased in the last years. Superconducting nanowire single-photon detectors (SNSPD) already show quite reasonable detection efficiencies in the NIR which can even be further improved. Novel theoretical approaches including vortex-assisted photon counting state that the detection efficiency in the long wavelength region can be enhanced by the detector geometry and an applied magnetic field. We present spectral measurements in the wavelength range from 350-2500 nm of the detection efficiency of meander-type TaN and NbN SNSPD with varying nanowire line width from 80 to 250 nm. Due to the used experimental setup we can accurately normalize the measured spectra and are able to extract the intrinsic detection efficiency (IDE) of our detectors. The results clearly indicate an improvement of the IDE depending on the wire width according to the theoretic models. Furthermore we experimentally found that the smallest detectable photon-flux can be increased by applying a small magnetic field to the detectors.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1374
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	Author	Lobanov, Y.V.; Tong, C.-Y.E.; Hedden, A.S.; Blundell, R.; Voronov, B.M.; Gol'tsman, G.N.
	Title	Direct measurement of the gain and noise bandwidths of HEB mixers			Type	Journal Article
	Year	2011	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	21	Issue	3	Pages	645-648
	Keywords	waveguide NbN HEB mixers
	Abstract	The intermediate frequency (IF) bandwidth of a hot electron bolometer (HEB) mixer is an important parameter of the mixer, in that it helps to determine its suitability for a given application. With the availability of wideband low noise amplifiers, it is simple to measure the performance of an HEB mixer over a wide range of IF at a fixed LO frequency using the standard Y-factor method. This in-situ method allows us to measure both the gain and noise bandwidths simultaneously. We have also measured mixer output impedance with a vector network analyser. Intrinsic time constant has been extracted from the impedance data and compared to the mixer's bandwidths determined from receiver Y-factor measurement.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ gujma @			Serial	720
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Kinetics of electron and hole binding into excitons in germanium			Type	Journal Article
	Year	1983	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	57	Issue	2	Pages	369-376
	Keywords	Ge, electron and hole binding
	Abstract	The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1711
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	Author	Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsyna, N. G.; Chulkova, G. M.
	Title	AC losses and submillimeter absorption in single crystals La2CuO4			Type	Journal Article
	Year	1990	Publication	Phys. B Condens. Mat.	Abbreviated Journal	Phys. B Condens. Mat.
	Volume	165-166	Issue		Pages	1269-1270
	Keywords	metal-dielectric-La2Cu04
	Abstract	The La2CuO4 single crystals were used to carry out the measurements of transmission spectra within the submillimeter range of wavelengths, as well as the capacitance C and conductivity G in the region of acoustic frequencies of the metal-dielectric-La2Cu04 system at low temperatures. The optical spectra display a threshold character. There takes place a sharp decreasing of transmission signal in the energy range of hυ>1.5meV. The C(ω,T) and G(ω,T) dependences have a universal form characteristic of relaxation processes of the Debye type. The relaxation time dependence displays a thermoactivation character τ(T)-exp(ξ/T) with a gap value of ξ≃2meV,coinciding with the optical one. It is assumed that there exist excitations with a characteristic energy ~ 2meV in La2Cu04.A possible nature of the revealed low-energy excitations is discussed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4526	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1686
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	Author	Cherednichenko, S.; Kroug, M.; Merkel, H.; Kollberg, E.; Loudkov, D.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Gershenzon, E.
	Title	Local oscillator power requirement and saturation effects in NbN HEB mixers			Type	Conference Article
	Year	2001	Publication	Proc. 12^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 12^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	273-285
	Keywords	NbN HEB mixers, LO power, local oscillator power, saturation effect, dynamic range
	Abstract	The local oscillator power required for NbN hot-electron bolometric mixers (P LO ) was investigated with respect to mixer size, critical temperature and ambient temperature. P LO can be decreased by a factor of 10 as the mixer size decreases from 4×0.4 µm 2 to 0.6×0.13 µm 2 . For the smallest volume mixer the optimal local oscillator power was found to be 15 nW. We found that for such mixer no signal compression was observed up to an input signal of 2 nW which corresponds to an equivalent input load of 20,000 K. For a constant mixer volume, reduction of T c can decrease optimal local oscillator power at least by a factor of 2 without a deterioration of the receiver noise temperature. Bath temperature was found to have minor effect on the receiver characteristics.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	San Diego, CA, USA	Editor	Jet Propulsion Laboratory, California Inst.it.u.t.e of Technology
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	318
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	Author	Ekstrom, H.; Karasik, B.; Weikle, R.; Yngvesson, K. S.; Gol’tsman, G.; Kollberg, E.; Gershenzon, E.
	Title	Mixers using superconducting Nb films in the resistive state			Type	Conference Article
	Year	1993	Publication	23rd European Microwave Conf.	Abbreviated Journal	23rd European Microwave Conf.
	Volume		Issue		Pages	787-789
	Keywords	Nb HEB mixers
	Abstract	The mixing of 20 GHz radiation in a Nb superconducting film in the resistive state was studied. The experiment gave evidence of electron-heating to be the origin of the non-linear phenomenon. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are determined. Our measurements indicate a conversion loss of about 6-8 dB. The hot-electron bolometer is considered to be very promising for use in heterodyne receivers in a wide frequency range from microwaves to terahertz frequencies.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1651
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	Author	Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.
	Title	Energy relaxation of two-dimensional electrons in the quantum Hall effect regime			Type	Journal Article
	Year	2000	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	71	Issue	1	Pages	31-34
	Keywords	2DEG, GaAs/AlGaAs heterostructures
	Abstract	The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes	http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”)			Approved	no
	Call Number				Serial	1559
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	Author	Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.
	Title	Thermal boundary resistance at YBaCuO film-substrate interface			Type	Conference Article
	Year	1993	Publication	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences	Abbreviated Journal	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
	Volume	112	Issue		Pages	405-406
	Keywords	YBCO films
	Abstract	The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	Meissner, M.; Pohl, R. O.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
	Notes				Approved	no
	Call Number				Serial	1665
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	Author	Svechnikov, S.; Verevkin, A.; Voronov, B.; Menschikov, E.; Gershenzon, E.; Gol'tsman, G.
	Title	Quasioptical phonon-cooled NbN hot electron bolometer mixers at 0.5-1.1 THz			Type	Conference Article
	Year	1998	Publication	Proc. 9^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 9^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	45-51
	Keywords	NbN HEB mixers
	Abstract	The noise performance of a receiver incorporating spiral antenna coupled NbN phonon-cooled superconducting hot electron bolometric mixer is measured from 450 GHz to 1200 GHz. The mixer element is thin (thickness nm) NbN 1.5 pm wide and 0.2 i.um long film fabricated by lift-off e-beam lithography on high-resistive silicon substrate. The noise of the receiver temperature is 1000 K at 800-900 GHz, 1200 K at 950 GHz, and 1600 K at 1.08 THz. The required (absorbed) local-oscillator power is —20 nW.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1586
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	Author	Kawamura, J.; Blundell, R.; Tong, C-Y. E.; Gol'tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S.
	Title	Phonon-cooled NbN HEB mixers for submillimeter wavelengths			Type	Conference Article
	Year	1997	Publication	Proc. 8^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 8^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	23-28
	Keywords	waveguide NbN HEB mixers
	Abstract	The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	275
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	Author	Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R.
	Title	Noise characteristics of a NbN hot-electron mixer at 2.5 THz			Type	Journal Article
	Year	1997	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	7	Issue	2	Pages	3572-3575
	Keywords	NbN HEB mixers
	Abstract	The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1594
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	Author	Tikhonov, V. V.; Boyarskii, D. A.; Polyakova, O. N.; Dzardanov, A. L.; Goltsman, G. N.
	Title	Radiophysical and dielectric properties of ore minerals in 12--145 GHz frequency range			Type	Journal Article
	Year	2010	Publication	PIER B	Abbreviated Journal	PIER B
	Volume	25	Issue		Pages	349-367
	Keywords	complex permittivity, ore minerals
	Abstract	The paper discusses a retrieval technique of complex permittivity of ore minerals in frequency ranges of 12--38 GHz and 77--145 GHz. The method is based on measuring frequency dependencies of transmissivity and reflectivity of plate-parallel mineral samples. In the 12--38 GHz range, the measurements were conducted using a panoramic standing wave ratio and attenuation meter. In the 77--145 GHz range, frequency dependencies of transmissivity and reflectivity were obtained using millimeter-band spectrometer with backward-wave oscillators. The real and imaginary parts of complex permittivity of a mineral were determined solving an equation system for frequency dependencies of transmissivity and reflectivity of an absorbing layer located between two dielectric media. In the course of the work, minerals that are primary ores in iron, zinc, copper and titanium mining were investigated: magnetite, hematite, sphalerite, chalcopyrite, pyrite, and ilmenite.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ gujma @			Serial	639
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	Author	Gol’tsman, G. N.; Gershenzon, E. M.
	Title	Phonon-cooled hot-electron bolometric mixer: overview of recent results			Type	Journal Article
	Year	1999	Publication	Appl. Supercond.	Abbreviated Journal	Appl. Supercond.
	Volume	6	Issue	10-12	Pages	649-655
	Keywords	NbN HEB mixers
	Abstract	The paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixer has crossed the level of 1 K·GHz−1 at 430 GHz (410 K) and 600–650 GHz (480 K) and is close to this level at 820 GHz (1100 K) and 900 GHz (980 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and are about 100 nW for mixers made by e-beam lithography. The studies in terahertz receivers based on HEB superconducting mixers now present a dynamic, rapidly developing field.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0964-1807	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1564
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	Author	Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K.
	Title	Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation			Type	Journal Article
	Year	2020	Publication	Sci. Rep.	Abbreviated Journal	Sci. Rep.
	Volume	10	Issue	1	Pages	16819
	Keywords	VN HEB
	Abstract	The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.
	Address	National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Series Volume		Series Issue		Edition
	ISSN	2045-2322	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:33033360; PMCID:PMC7546726			Approved	no
	Call Number				Serial	1797
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	Author	Verevkin, A.; Pearlman, A.; Slysz, W.; Zhang, J.; Currie, M.; Korneev, A.; Chulkova, G.; Okunev, O.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G. N.; Sobolewski, R.
	Title	Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications			Type	Journal Article
	Year	2004	Publication	J. Modern Opt.	Abbreviated Journal	J. Modern Opt.
	Volume	51	Issue	9-10	Pages	1447-1458
	Keywords	NbN SSPD, SNSPD
	Abstract	The paper reports progress on the design and development of niobium-nitride, superconducting single-photon detectors (SSPDs) for ultrafast counting of near-infrared photons for secure quantum communications. The SSPDs operate in the quantum detection mode, based on photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-width superconducting stripe. The devices are fabricated from 3.5 nm thick NbN films and kept at cryogenic (liquid helium) temperatures inside a cryostat. The detector experimental quantum efficiency in the photon-counting mode reaches above 20% in the visible radiation range and up to 10% at the 1.3–1.55 μn infrared range. The dark counts are below 0.01 per second. The measured real-time counting rate is above 2 GHz and is limited by readout electronics (the intrinsic response time is below 30 ps). The SSPD jitter is below 18 ps, and the best-measured value of the noise-equivalent power (NEP) is 2 × 10−18 W/Hz1/2. at 1.3 μm. In terms of photon-counting efficiency and speed, these NbN SSPDs significantly outperform semiconductor avalanche photodiodes and photomultipliers.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0950-0340	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1488
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	Author	Semenov, Alexei D; Gol'tsman, Gregory N; Sobolewski, Roman
	Title	Hot-electron effect in superconductors and its applications for radiation sensors			Type	Journal Article
	Year	2002	Publication	Superconductor Science and Technology	Abbreviated Journal	Supercond. Sci. Technol.
	Volume	15	Issue	4	Pages	R1-R16
	Keywords	HEB, SSPD
	Abstract	The paper reviews the main aspects of nonequilibrium hot-electron phenomena in superconductors and various theoretical models developed to describe the hot-electron effect. We discuss implementation of the hot-electron avalanche mechanism in superconducting radiation sensors and present the most successful practical devices, such as terahertz mixers and direct intensity detectors, for far-infrared radiation. Our presentation also includes the novel approach to hot-electron quantum detection implemented in superconducting x-ray to optical photon counters.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-2048	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	416
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	Author	Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E.
	Title	Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies			Type	Journal Article
	Year	1999	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	9	Issue	2	Pages	3757-3760
	Keywords	NbN HEB mixers
	Abstract	The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1569
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	Author	Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol’tsman, G.; Gershenzon, E.
	Title	Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies			Type	Conference Article
	Year	1998	Publication	Proc. 6-th Int. Conf. Terahertz Electron.	Abbreviated Journal	Proc. 6-th Int. Conf. Terahertz Electron.
	Volume		Issue		Pages	149-152
	Keywords	NbN HEB mixers
	Abstract	The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB.
	Address
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	Area		Expedition		Conference	IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171)
	Notes				Approved	no
	Call Number				Serial	1582
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	Author	Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Hübers, H.-W.; Schubert, J.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E.
	Title	NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz			Type	Conference Article
	Year	1999	Publication	Proc. 10^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 10^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	238-246
	Keywords	NbN HEB mixers
	Abstract	The performance of NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1- 0.2 gm, the width is 1-2 gm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power required is less than 500 nW at the receiver input. First results on the spiral antenna polarization measurements are reported.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
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	Notes				Approved	no
	Call Number				Serial	1575
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	Author	Korneeva, Y. P.; Manova, N. N.; Florya, I. N.; Mikhailov, M. Y.; Dobrovolskiy, O. V.; Korneev, A. A.; Vodolazov, D. Y.
	Title	Different single-photon response of wide and narrow superconducting Mo_xSi_1−x strips			Type	Journal Article
	Year	2020	Publication	Phys. Rev. Applied	Abbreviated Journal	Phys. Rev. Applied
	Volume	13	Issue	2	Pages	024011 (1 to 7)
	Keywords	MoSi SSPD, SNSPD
	Abstract	The photon count rate (PCR) of superconducting single-photon detectors made of MoxSi1−x films shaped as a 2-μm-wide strip and a 115-nm-wide meander strip line is studied experimentally as a function of the dc biasing current at different values of the perpendicular magnetic field. For the wide strip, a crossover current Icross is observed, below which the PCR increases with an increasing magnetic field and above which it decreases. This behavior contrasts with the narrow MoxSi1−x meander, for which no crossover current is observed, thus suggesting different photon-detection mechanisms in the wide and narrow strips. Namely, we argue that in the wide strip the absorbed photon destroys superconductivity locally via the vortex-antivortex mechanism for the emergence of resistance, while in the narrow meander superconductivity is destroyed across the whole strip line, forming a hot belt. Accordingly, the different photon-detection mechanisms associated with vortices and the hot belt determine the qualitative difference in the dependence of the PCR on the magnetic field.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2331-7019	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1790
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	Author	Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Wide-band highspeed Nb and YBaCuO detectors			Type	Journal Article
	Year	1991	Publication	IEEE Trans. Magn.	Abbreviated Journal	IEEE Trans. Magn.
	Volume	27	Issue	2	Pages	2836-2839
	Keywords	YBCO, HTS, Nb detectors
	Abstract	The physical limitations on the response time and the nature of nonequilibrium detection of radiation were investigated for Nb and YBCO film in a wide spectral range from millimeter to near-infrared wavelengths. In the case of ideal heat removal from the film, the detection mechanism is connected with an electron heating effect which is not selective over a wide spectral interval. For Nb, the dependence of the response time on the electron mean free path l and temperature T is tau varies as T/sup -2/l/sup -1/. The values of detectivity D* and tau are 310/sup 11/ W/sup -1/ Hz/sup 1/2/ cm and 510/sup -9/ s at T=1.6 K, respectively. For YBCO film the tau value of 1-2 ps at T=77 K was obtained; the NEP value of 3*10/sup -11/ W-Hz/sup -1/2/ can be obtained at T=77 K in the case of the optimal film matching to the radiation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0018-9464	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	239
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	Author	Okunev, 0.; Dzardranov, A.; Gol'tsman, G.; Gershenzon, E.
	Title	Performances of hot—electron superconducting mixer for frequencies less than the gap energy: NbN mixer for 100 GHz operation			Type	Conference Article
	Year	1995	Publication	Proc. 6^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 6^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	247-253
	Keywords	NbN HEB mixers
	Abstract	The possibilities to improve the parameters of the 100 GHz NbN HEB superconducting waveguide mixers have been studied. The device consists of a signal strip 1 gm wide by 2 Am long made of 40 A thick NbN film. The best operation point was found at 5 K, where the mixer bandwidth made up 1.5-2 GHz and the total loss diminished down to 8 dB. The critical current density has been increased up to " 40 6 A/cm 2 , the noise temperature of the receiver (DSB) has reduced down to 450 K and the local oscillator power has decreased down to -.4).1 mcV.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1625
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Submillimeter spectroscopy of semiconductors			Type	Journal Article
	Year	1973	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	37	Issue	2	Pages	299-304
	Keywords	semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons
	Abstract	The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
	Address
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1735
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	Author	Smirnov, K.; Divochiy, A.; Vakhtomin, Y.; Morozov, P.; Zolotov, P.; Antipov, A.; Seleznev, V.
	Title	NbN single-photon detectors with saturated dependence of quantum efficiency			Type	Journal Article
	Year	2018	Publication	Supercond. Sci. Technol.	Abbreviated Journal	Supercond. Sci. Technol.
	Volume	31	Issue	3	Pages	035011 (1 to 8)
	Keywords	NbN SSPD, SNSPD
	Abstract	The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-2048	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1232
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	Author	Akhmadishina, K. F.; Bobrinetskiy, I. I.; Komarov, I. A.; Malovichko, A. M.; Nevolin, V. K.; Fedorov, G. E.; Golovin, A. V.; Zalevskiy, A. O.; Aidarkhanov, R. D.
	Title	Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers			Type	Journal Article
	Year	2015	Publication	Semicond.	Abbreviated Journal	Semicond.
	Volume	49	Issue	13	Pages	1749-1753
	Keywords	carbon nanotubes, CNT detectors
	Abstract	The possibility of the fabrication of a fast-response biological sensor based on a composite of single-layer carbon nanotubes and aptamers for the specific detection of proteins is shown. The effect of modification of the surface of the carbon nanotubes on the selectivity and sensitivity of the sensors is investigated. It is shown that carboxylated nanotubes have a better selectivity for detecting thrombin.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7826	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1783
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	Author	Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V.
	Title	Generation of nanosecond terahertz pulses by the optical rectification method			Type	Journal Article
	Year	2012	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	96	Issue	2	Pages	94-97
	Keywords	optical rectification, lithium niobate crystal
	Abstract	The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1377
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	Author	Ozhegov, R. V.; Gorshkov, K. N.; Okunev, O. V.; Gol’tsman, G. N.
	Title	Superconducting hot-electron bolometer mixer as element of thermal imager matrix			Type	Journal Article
	Year	2010	Publication	Tech. Phys. Lett.	Abbreviated Journal	Tech. Phys. Lett.
	Volume	36	Issue	11	Pages	1006-1008
	Keywords	HEB mixers
	Abstract	The possibility of using a matrix of sensitive elements on a 12-mm-diameter hyperhemispherical lens in a thermal imager operating in the terahertz range has been studied. Dimensions of a lens region acceptable for arrangement of the matrix, in which the receiver noise temperature varies within 16% of the mean value, are determined to be 3.3% of the lens diameter. Deviations of the main lobe of the directivity pattern are evaluated, which amount to ±1.25° relative to the direction toward the optimum position of a mixer. The fluctuation sensitivity of the receiver measured in experiment is 0.5 K at a frequency of 300 GHz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7850	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1390
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	Author	Dryazgov, M.; Semenov, A.; Manova, N.; Korneeva, Y.; Korneev, A.
	Title	Modelling of normal domain evolution after single-photon absorption of a superconducting strip of micron width			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012195 (1 to 4)
	Keywords	SSPD modelling, SNSPD
	Abstract	The present paper describes a modelling of normal domain evolution in superconducting strip of micron width using solving differential equations describing the temperature and current changes. The solving results are compared with experimental data. This comparison demonstrates the high accuracy of the model. In future, it is possible to employ this model for improvement of single photon detector based on micron-scale superconducting strips.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1785
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	Author	Gol’tsman, G. N.
	Title	Terahertz technology in Russia			Type	Conference Article
	Year	1994	Publication	24th European Microwave Conf.	Abbreviated Journal	24th European Microwave Conf.
	Volume	1	Issue		Pages	113-121
	Keywords	BWO, HEB mixers
	Abstract	The presentation consider the parameters and operating peculiarities of unique microwave generators of the terahertz range which have been created in Russia – the backward wave oscillators – as well as certain devices based on these generators, such as high resolution. spectrometers and time-resolving spectrometers with picosecond temporal resolution. Most resent BWO-based studies are illustrated by a project devoted to superconductive hot-electron. bolometers which are of great independent value for the terahertz technology as high-sensitive picosecond detectors and low noise broad-band mixers.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	24th European Microwave Conference
	Notes				Approved	no
	Call Number				Serial	1635
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	Author	Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N.
	Title	Picosecond response of a superconducting hot-electron NbN photodetector			Type	Journal Article
	Year	1998	Publication	Appl. Supercond.	Abbreviated Journal	Appl. Supercond.
	Volume	6	Issue	7-9	Pages	423-428
	Keywords	NbN SSPD, SNSPD
	Abstract	The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0964-1807	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1584
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	Author	Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R.
	Title	Ultimate quantum efficiency of a superconducting hot-electron photodetector			Type	Journal Article
	Year	1998	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	73	Issue	26	Pages	3938-3940
	Keywords	NbN SSPD, SNSPD
	Abstract	The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W, respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1579
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	Author	Baksheeva, K.; Vdovydchenko, A.; Gorshkov, K.; Ozhegov, R.; Kinev, N.; Koshelets, V.; Goltsman, G.
	Title	Study of human skin radiation in the terahertz frequency range			Type	Conference Article
	Year	2019	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1410	Issue		Pages	012076 (1 to 5)
	Keywords	SIS mixer, SIR, applications, medicine, sympathetic nervous system, SNS
	Abstract	The radiation of human skin in the terahertz frequency range under the influence of mental stresses has been studied in the current work. An experimental setup for observation of changes in human skin radiation, which occur under the influence of psychological stresses, by means of a superconducting integrated receiver has been developed. More than 30 volunteers participate in these studies, which allows us to verify presence of correlation between the signals from the superconducting integrated terahertz receiver and other sensors that monitor human mental stress.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1272
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	Author	Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A.
	Title	Tunnel field-effect transistors for sensitive terahertz detection			Type	Journal Article
	Year	2021	Publication	Nat. Commun.	Abbreviated Journal	Nat. Commun.
	Volume	12	Issue	1	Pages	543
	Keywords	field-effect transistors, bilayer graphene, BLG
	Abstract	The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
	Address	Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2041-1723	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:33483488; PMCID:PMC7822863			Approved	no
	Call Number				Serial	1261
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	Author	Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N.
	Title	Ultrafast superconducting bolometer receivers for terahertz applications			Type	Abstract
	Year	2009	Publication	Proc. PIERS	Abbreviated Journal	Proc. PIERS
	Volume		Issue		Pages	867
	Keywords	HEB
	Abstract	The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe.
	Address	Moscow, Russia
	Corporate Author				Thesis
	Publisher	The Electromagnetics Academy	Place of Publication	777 Concord Avenue, Suite 207 Cambridge, MA 02138	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1559-9450	ISBN	978-1-934142-09-7	Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ sasha @ ozhegovultrafast			Serial	1022
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	Author	Smirnov, K. V.; Vakhtomin, Yu. B.; Divochiy, A. V.; Ozhegov, R. V.; Pentin, I. V.; Slivinskaya, E. V.; Tarkhov, M. A.; Gol’tsman, G. N.
	Title	Single-photon detectors for the visible and infrared parts of the spectrum based on NbN nanostructures			Type	Abstract
	Year	2009	Publication	Proc. Progress In Electromagnetics Research Symp.	Abbreviated Journal	Proc. Progress In Electromagnetics Research Symp.
	Volume		Issue		Pages	863-864
	Keywords	SSPD, SNSPD
	Abstract	The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types ofdetectors [1, 2] and their use both in fundamental and applied studies [3–6]. In this paper, wepresent the results of the development and fabrication of receiving systems for the visible andinfrared parts of the spectrum optimised for use in telecommunication systems and quantumcryptography.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Moscow, Russia	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ sasha @ smirnovsession			Serial	1050
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	Author	Romanov, N. R.; Zolotov, P. I.; Vakhtomin, Y. B.; Divochiy, A. V.; Smirnov, K. V.
	Title	Electron diffusivity measurements of VN superconducting single-photon detectors			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051032
	Keywords	SSPD, SNSPD, VN
	Abstract	The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1229
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	Author	Gershenzon, E.M.; Gol'tsman, G.N.; Dzardanov, A.L.; Kuznetsov, E.A.
	Title	Superconducting UHF-limiter based on electron heating up			Type	Journal Article
	Year	1992	Publication	Sverkhprovodimost': Fizika, Khimiya, Tekhnika	Abbreviated Journal	Sverkhprovodimost': Fizika, Khimiya, Tekhnika
	Volume	5	Issue	11	Pages	2164-2170
	Keywords	electron heating, applications
	Abstract	The results of experimental investigation of fast-action 5HF-limiter are presented; the limiter is based on the utilization of electron hetaing phenomenon in thin superconducting films. The design of SHF-limiter, which is intended for operation at liquid helium temperatures and which has the form of a section of superconducting NbN microstrip line for 1-12 GHz rang, is described.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0235-8964	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1669
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	Author	Maslennikova, Anna; Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Kaurova, Natalia; Voronov, Boris; Gol’tsman, Gregory
	Title	Gain bandwidth and noise temperature of NbN HEB mixers with simultaneous phonon and diffusion cooling			Type	Abstract
	Year	2010	Publication	Proc. 21^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 21^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	218-219
	Keywords
	Abstract	The space observatory Millimetron will be operating in the millimeter, sub-millimeter and infrared ranges using a 12-m cryogenic telescope in a single-dish mode, and as an interferometer with the space-earth and space-space baselines (the latter after the launch of the second identical space telescope). The observatory will allow performing astronomical observations with an unprecedented sensitivity (down to nJy level) in the single-dish mode, and observations with a high angular resolution in the interferometer mode. The total spectral range 20 μm – 2 cm is separated into 10 bands. HEB mixers with two cooling channels (diffusion and phonon) have been chosen to be the detectors of choice of the system covering the range from 1 THz to 6 THz as the best detectors in terahertz receivers. This type of HEB has already shown good work in the terahertz range. A gain bandwidth of 6 GHz at an LO frequency of 300 GHz and a noise temperature of 750 K at an LO frequency of 2.5 THz are the best values for HEB mixers with two cooling channels [1]. Theoretical estimations predict a bandwidth up to 12 GHz. Reaching such good result demands more systematic and thorough research. We present the results of the gain bandwidth and noise temperature measurements for superconducting hot- electron bolometer mixers with two cooling channels. These characteristics of the devices of lengths varying from 50 to 200 nm were measured for the purposes of Millimetron at frequencies of 600 GHz, 2.5 THz, and 3.8 THz. For gain bandwidth measurements we use two BWO’s operating at 600 GHz: one as the signal and the second as the LO. The noise temperature measurements were performed using a gas discharge laser as the LO and blackbodies at 77 K and 295 K as input signals. The devices studied consist of 3.5-nm-thick NbN bridges connected to thick (10 nm) high conductivity Au leads fabricated in situ. This method of fabricating devices has already proved promising by opening the diffusion cooling channel. [2] Fig. 1 shows a SEM photograph of a log-spiral antenna with an HEB at its apex. Fig. 1. Left: a SEM photograph of a log-spiral antenna with an HEB at its apex; right: a close-up of the HEB at the antenna apex. [1] S. A. Ryabchun, I. V. Tretyakov, M. I. Finkel, S. N. Maslennikov, N. S. Kaurova, V. A. Seleznev, B. M. Voronov, and G. N. Gol’tsman, NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling, Proc. of the 20 th Int. Symp. Space. Technol., Charlottesville, Virginia, USA, April 20 – 22, 2009. 218[2] S. A. Ryabchun * , I. V. Tretyakov, M. I. Finkel, S. N. Maslennikov, N. S. Kaurova, V. A. Seleznev, B. M. Voronov and G. N. Goltsman, Fabrication and characterisation of NbN HEB mixers with in situ gold contacts, Proc. of the 19 th Int. Symp. Space. Technol., Groningen, The Netherlands, April 28-30, 2008
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1393
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	Author	Manova, N. N.; Korneeva, Yu. P.; Korneev, A. A.; Slysz, W.; Voronov, B. M.; Gol'tsman, G. N.
	Title	Superconducting NbN single-photon detector integrated with quarter-wave resonator			Type	Journal Article
	Year	2011	Publication	Tech. Phys. Lett.	Abbreviated Journal	Tech. Phys. Lett.
	Volume	37	Issue	5	Pages	469-471
	Keywords	SSPD, SNSPD
	Abstract	The spectral dependence of the quantum efficiency of superconducting NbN single-photon detectors integrated with quarter-wave resonators based on Si3N4, SiO2, and SiO layers has been studied.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ gujma @			Serial	664
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L.
	Title	Observation of free carrier resonances in p-type germanium at submillimeter wavelengths			Type	Journal Article
	Year	1978	Publication	Sov. Phys. Solid State	Abbreviated Journal	Sov. Phys. Solid State
	Volume	20	Issue	4	Pages	573-579
	Keywords	p-Ge, free carriers, resonances
	Abstract	The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
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	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1721
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
	Title	Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field			Type	Journal Article
	Year	1977	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	45	Issue	3	Pages	555-565
	Keywords	Ge, GaAs, magnetic field, donors, energy spectrum
	Abstract	The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
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	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1728
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	Author	Shurakov, Alexander; Tong, Edward; Blundell, Raymond; Gol'tsman, Gregory
	Title	Microwave stabilization of HEB mixer by a microchip controller			Type	Conference Article
	Year	2012	Publication	IEEE MTT-S international microwave symposium digest	Abbreviated Journal
	Volume		Issue		Pages	1-3
	Keywords	HEB mixer stability, microwave injection, Allan variance, Allan time
	Abstract	The stability of a Hot Electron Bolometer (HEB) mixer can be improved by the use of microwave injection. In this article we report a refinement of this approach. We introduce a microchip controller to facilitate the implementation of the stabilization scheme, and demonstrate that the feedback loop effectively suppresses drifts in the HEB bias current, leading to an improvement in the receiver stability. The measured Allan time of the mixer's IF output power is increased to > 10 s.
	Address	Montreal, QC, Canada
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	857
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	Author	Goltsman, G.; Korneev, A.; Divochiy, A.; Minaeva, O.; Tarkhov, M.; Kaurova, N.; Seleznev, V.; Voronov, B.; Okunev, O.; Antipov, A.; Smirnov, K.; Vachtomin, Yu.; Milostnaya, I.; Chulkova, G.
	Title	Ultrafast superconducting single-photon detector			Type	Journal Article
	Year	2009	Publication	J. Modern Opt.	Abbreviated Journal	J. Modern Opt.
	Volume	56	Issue	15	Pages	1670-1680
	Keywords	SSPD, SNSPD
	Abstract	The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0950-0340	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ akorneev @			Serial	607
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	Author	Rasulova, G. K.; Pentin, I. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Khabibullin, R. A.; Klimov, E. A.; Klochkov, A. N.; Goltsman, G. N.
	Title	Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime			Type	Journal Article
	Year	2020	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
	Volume	128	Issue	22	Pages	224303 (1 to 11)
	Keywords	HEB, resonant tunneling diode, RTD
	Abstract	The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states.
	Address
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1262
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	Author	Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I.
	Title	Electron-phonon scattering rate in impure NbC films			Type	Abstract
	Year	1998	Publication	NASA/ADS	Abbreviated Journal	NASA/ADS
	Volume		Issue		Pages	Y35.08
	Keywords	NbC films
	Abstract	The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
	Address
	Corporate Author				Thesis
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	Language		Summary Language		Original Title
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	Area		Expedition		Conference	American Physical Society, Annual March Meeting, March 16-20, 1998 Los Angeles, CA
	Notes				Approved	no
	Call Number				Serial	1591
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	Author	Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
	Title	Gap frequency and photon absorption in a hot electron bolometer			Type	Conference Article
	Year	2016	Publication	Proc. 27^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 27^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	121
	Keywords	NbN HEB; Si membrane
	Abstract	The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015.
	Address
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	Notes				Approved	no
	Call Number				Serial	1204
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	Author	Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
	Title	Photon absorption near the gap frequency in a hot electron bolometer			Type	Journal Article
	Year	2017	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	27	Issue	4	Pages	1-4
	Keywords	NBN HEB mixer
	Abstract	The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1558-2515	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1331
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	Author	Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M.
	Title	Fast NbN superconducting switch controlled by optical radiation			Type	Journal Article
	Year	1997	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	7	Issue	2	Pages	3734-3737
	Keywords	NbN superconducting switch
	Abstract	The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits.
	Address
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	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
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	Notes				Approved	no
	Call Number				Serial	1596
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	Author	Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
	Title	Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons			Type	Journal Article
	Year	2010	Publication	Semicond.	Abbreviated Journal	Semicond.
	Volume	44	Issue	11	Pages	1427-1429
	Keywords	2DEG, AlGaAs/GaAs heterostructures mixers
	Abstract	The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7826	ISBN		Medium
	Area		Expedition		Conference
	Notes	Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов			Approved	no
	Call Number				Serial	1216
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S.
	Title	Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K			Type	Journal Article
	Year	1996	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	64	Issue	5	Pages	404-409
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes	http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”)			Approved	no
	Call Number				Serial	1608
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	Author	Ptitsina N. G.; Chulkova G. M.; Il'in K. S.; Sergeev A. V.; Pochinkov F. S.; Gershenzon E. M.
	Title	Superconductivity has been found in a number of new compounds between the non-superconducting transition elements and nonmetals such as Si, Ge, and Te. These findings have suggested possible criteria for superconductivity in both elements and compounds.			Type	Journal Article
	Year	1997	Publication	Phys. Rev. B	Abbreviated Journal	Phys. Rev. B
	Volume	56	Issue	16	Pages
	Keywords
	Abstract	The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path L=1.5– 10 nm has been measured at 4.2–300 K. The resistance of all the films contains a T^2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference â€žM. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 ~1987! @Sov. Phys. JETP 65, 1291 ~1987!#â€¦, we obtain constants of nteraction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electronphonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ phisix @			Serial	988
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	Author	Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E.
	Title	Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate			Type	Journal Article
	Year	1997	Publication	Phys. Rev. B	Abbreviated Journal	Phys. Rev. B
	Volume	56	Issue	16	Pages	10089-10096
	Keywords	disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity
	Abstract	The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1766
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	Author	Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M.
	Title	Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films			Type	Journal Article
	Year	1995	Publication	JETP	Abbreviated Journal	JETP
	Volume	80	Issue	5	Pages	960-964
	Keywords
	Abstract	The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ phisix @			Serial	989
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	Author	Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V.
	Title	Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films			Type	Conference Article
	Year	1996	Publication	Czech J. Phys.	Abbreviated Journal	Czech J. Phys.
	Volume	46	Issue	S5	Pages	2489-2490
	Keywords	Al, Be, Nb films
	Abstract	The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0011-4626	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1767
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	Author	Sergeev, A.; Semenov, A.; Trifonov, V.; Karasik, B.; Gol'tsman, G.; Gershenzon, E.
	Title	Heat transfer in YBaCuO thin film/sapphire substrate system			Type	Journal Article
	Year	1994	Publication	J. Supercond.	Abbreviated Journal	J. Supercond.
	Volume	7	Issue	2	Pages	341-344
	Keywords	YBCO films
	Abstract	The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0896-1107	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1647
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	Author	Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gershenzon, E. M.
	Title	Electron-phonon interaction in thin YBaCuO films and fast detectors			Type	Conference Article
	Year	1993	Publication	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences	Abbreviated Journal	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
	Volume	112	Issue		Pages	184-185
	Keywords	YBCO HTS detectors
	Abstract	The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	Meissner, M.; Pohl, R. O.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
	Notes				Approved	no
	Call Number				Serial	1662
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	Author	Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Interaction of electrons with thermal phonons in YBa₂Cu₃O_7-δ films at low temperatures			Type	Journal Article
	Year	1989	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	50	Issue	5	Pages	283-286
	Keywords	YBCO HTS films
	Abstract	The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs.
	Address
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1690
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	Author	Hübers, H.-W.; Semenov, A.; Holldack, K.; Schade, U.; Wüstefeld, G.; Gol’tsman, G.
	Title	Time domain analysis of coherent terahertz synchrotron radiation			Type	Journal Article
	Year	2005	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	87	Issue	18	Pages	184103 (1 to 3)
	Keywords	NbN HEB mixers, applications
	Abstract	The time structure of coherent terahertz synchrotron radiation at the electron storage ring of the Berliner Elektronensynchrotron und Speicherring Gesellschaft has been analyzed with a fast superconducting hot-electron bolometer. The emission from a single bunch of electrons was found to last ∼1500ps at frequencies around 0.4THz, which is much longer than the length of an electron bunch in the time domain (∼5ps). It is suggested that this is caused by multiple reflections at the walls of the beam line. The quadratic increase of the power with the number of electrons in the bunch as predicted for coherent synchrotron radiation and the transition from stable to bursting radiation were determined from a single storage ring fill pattern of bunches with different populations.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1457
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	Author	Arutyunov, K. Y.; Ramos-Álvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol’tsman, G. N.
	Title	Quasi-1-dimensional superconductivity in highly disordered NbN nanowires			Type	Miscellaneous
	Year	2016	Publication	arXiv	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	narrow NbN nanowires, BCS
	Abstract	The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the superconducting gap and the pairing potential. Here we report experimental study of electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. We find that conventional models based on phase slip concept provide reasonable fits for the shape of the R(T) transition curve. Temperature dependence of the critical current follows the text-book Ginzburg-Landau prediction for quasi-one-dimensional superconducting channel Ic~(1-T/Tc)^3/2. Hence, one may conclude that the intrinsic electronic inhomogeneity either does not exist in our structures, or, if exist, does not affect their resistive state properties.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1332			Approved	no
	Call Number				Serial	1338
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	Author	Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N.
	Title	Superconductivity in highly disordered NbN nanowires			Type	Journal Article
	Year	2016	Publication	Nanotechnol.	Abbreviated Journal	Nanotechnol.
	Volume	27	Issue	47	Pages	47lt02 (1 to 8)
	Keywords	NbN nanowires
	Abstract	The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links.
	Address	National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0957-4484	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:27782000			Approved	no
	Call Number				Serial	1332
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	Author	Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M.
	Title	Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films			Type	Journal Article
	Year	1993	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	63	Issue	5	Pages	681-683
	Keywords	YBCO HTS detectors, nonequilibrium
	Abstract	The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1655
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	Author	Gol’tsman, G. N.; Kouminov, P. B.; Goghidze, I. G.; Karasik, B. S.; Gershenzon, E. M.
	Title	Nonbolometric and fast bolometric responses of YBaCuO thin films in superconducting, resistive, and normal states			Type	Conference Article
	Year	1994	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	2159	Issue		Pages	81-86
	Keywords	YBCO HTS HEB, nonbolornetric
	Abstract	The transient voltage response in both epitaxial and granular YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 micrometers and 1.54 micrometers was studied. In normal and resistive states both types of films demonstrate two components: nonequilibrium picosecond component and following bolometric nanosecond. The normalized amplitudes are almost the same for all films. In superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to several orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of order parameter by the excess of quasiparticles followed by the change of resistance in normal and resistive states or kinetic inductance in superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the crossection for current percolation through the disordered network os Josephson weak links and by a decrease of condensate density in neighboring regions.
	Address
	Corporate Author				Thesis
	Publisher	SPIE	Place of Publication		Editor	Nahum, M.; Villegier, J.-C.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	High-Temperature Superconducting Detectors: Bolometric and Nonbolometric
	Notes				Approved	no
	Call Number				Serial	1641
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	Author	Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M.
	Title	Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses			Type	Journal Article
	Year	1994	Publication	J. Supercond.	Abbreviated Journal	J. Supercond.
	Volume	7	Issue	4	Pages	751-755
	Keywords	YBCO HTS detector, nonequilibrium response
	Abstract	The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0896-1107	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1636
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	Author	Gershenzon, E. M.; Gol’tsman, G. N.; Dzardanov, A. L.; Zorin, M. A.
	Title	Ultrafast superconductive switch			Type	Journal Article
	Year	1991	Publication	IEEE Trans. Magn.	Abbreviated Journal	IEEE Trans. Magn.
	Volume	27	Issue	2	Pages	2844-2846
	Keywords	Nb superconducting switch
	Abstract	The transition from superconductive to resistive state caused by infrared radiation and bias current pulses was investigated in order to minimize switching time tau and driving power W. Experimental results for Nb microstrips confirm the correctness of calculations based on the model of electron heating. For Nb switches, tau measured directly is 0.3-0.8 ns for radiation pulses and 1-3 ns for bias current pulses at T=4.2 K, while for YBaCuO switches at T=77 K it is expected to be several picoseconds. For an YBaCuO sample with the dimensions of 520.15 mu m/sup 2/, W was 10 mW, and it can be further reduced to the order of several microwatts by decreasing the volume of the sample.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1941-0069	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1680
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	Author	Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M.
	Title	Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation			Type	Journal Article
	Year	1994	Publication	Phys. Rev. B Condens. Matter.	Abbreviated Journal	Phys. Rev. B Condens. Matter.
	Volume	49	Issue	13	Pages	9091-9096
	Keywords	YBCO films
	Abstract	The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:10009690			Approved	no
	Call Number				Serial	1648
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	Author	Shein, K. V.; Zarudneva, A. A.; Emel’yanova, V. O.; Logunova, M. A.; Chichkov, V. I.; Sobolev, A.S.; Zav’yalov, V. V.; Lehtinen, J. S.; Smirnov, E. O.; Korneeva, Y. P.; Korneev, A. A.; Arutyunov, K. Y.
	Title	Superconducting microstructures with high impedance			Type	Journal Article
	Year	2020	Publication	Phys. Solid State	Abbreviated Journal	Phys. Solid State
	Volume	62	Issue	9	Pages	1539-1542
	Keywords	superconducting channels, SIS, inetic inductance, tunneling contacts, high impedance
	Abstract	The transport properties of two types of quasi-one-dimensional superconducting microstructures were investigated at ultra-low temperatures: the narrow channels close-packed in the shape of meander, and the chains of tunneling contacts “superconductor-insulator-superconductor.” Both types of the microstructures demonstrated high value of high-frequency impedance and-or the dynamic resistance. The study opens up potential for using of such structures as current stabilizing elements with zero dissipation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7834	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1789
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation			Type	Journal Article
	Year	1990	Publication	Solid State Communications	Abbreviated Journal	Solid State Communications
	Volume	76	Issue	4	Pages	493-497
	Keywords	YBCO HTS detectors
	Abstract	The ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter to near infrared. With the rise of radiation frequency the Josephson detection at the grain boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. Electron-phonon relaxation time τeph is determined by direct measurements and analyses quasistationary electron heating. Temperature dependence of τeph at T ≤ 40 K was found to be τeph ∼ T−1. The results show that detectors with the response time of few picoseconds at nitrogen temperature are attainable.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0038-1098	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1685
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Semenov, A. D.; Sergeev, A. V.
	Title	Processes of electron-phonon interaction in thin YBaCuO films			Type	Journal Article
	Year	1991	Publication	Phys. C: Supercond.	Abbreviated Journal	Phys. C: Supercond.
	Volume	185-189	Issue		Pages	1371-1372
	Keywords	YBCO HTS detectors
	Abstract	The ultrafast voltage response of YBaCuO films to laser radiation is studied and compared with previously investigated quasiparicles response to radiation of submillimeter wavelength range. Voltage shift under the visible light radiation has two components. Picosecond response realized as suppression superconductivity by nonequilibrium excess quasiparticles, response time is determined by quasiparticles recombination rate. Nanosecond response is probably due to bolometric effect.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4534	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1676
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	Author	Moshkova, M.; Divochiy, A.; Morozov, P.; Vakhtomin, Y.; Antipov, A.; Zolotov, P.; Seleznev, V.; Ahmetov, M.; Smirnov, K.
	Title	High-performance superconducting photon-number-resolving detectors with 86% system efficiency at telecom range			Type	Journal Article
	Year	2019	Publication	J. Opt. Soc. Am. B	Abbreviated Journal	J. Opt. Soc. Am. B
	Volume	36	Issue	3	Pages	B20
	Keywords	NbN PNR SSPD, SNSPD
	Abstract	The use of improved fabrication technology, highly disordered NbN thin films, and intertwined section topology makes it possible to create high-performance photon-number-resolving superconducting single-photon detectors (PNR SSPDs) that are comparable to conventional single-element SSPDs at the telecom range. The developed four-section PNR SSPD has simultaneously an 86±3% system detection efficiency, 35 cps dark count rate, ∼2 ns dead time, and maximum 90 ps jitter. An investigation of the PNR SSPD’s detection efficiency for multiphoton events shows good uniformity across sections. As a result, such a PNR SSPD is a good candidate for retrieving the photon statistics for light sources and quantum key distribution systems.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0740-3224	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1225
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	Author	Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Aksaev, E. E.; Gershenzon, E. M.
	Title	Non-equilibrium quasiparticle response to radiation and bolometric effect in YBaCuO films			Type	Journal Article
	Year	1993	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	3	Issue	1	Pages	2132-2135
	Keywords	YBCO HTS HEB detectors
	Abstract	The voltage photoresponse of structured current biased YBCO films on different substrates to 20-ps laser pulses of 0.63- mu m and 1.54- mu m wavelengths and to continuously modulated radiation of 2-mm wavelength is measured to temperatures around T_c. Fast picosecond decay of the response to pulsed radiation is followed by slow exponential relaxation with a nanosecond characteristic time depending on the substrate material and film dimensions. The slow component does not depend on wavelength and is attributed to the bolometric effect, while the magnitude of the fast component associated with nonequilibrium response rises with wavelength. More than an order-of-magnitude increase of the nonequilibrium response is seen from near-infrared to millimeter-wave range. This dependence plausibly reflects the low efficiency of multiplication of photoexcited electrons in YBaCuO compared to conventional superconductors.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1558-2515	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1659
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	Author	Pentin, Ivan; Finkel, Matvey; Maslennikov, Sergey; Vakhtomin, Yuri; Smirnov, Konstantin; Kaurova, Nataliya; Goltsman, Gregory
	Title	Superconducting hot-electron-bolometer mixers for the mid-IR			Type	Journal Article
	Year	2017	Publication	Rus. J. Radio Electron.	Abbreviated Journal	Rus. J. Radio Electron.
	Volume		Issue	10	Pages
	Keywords	IR NbN HEB mixers
	Abstract	The work presents the result of development of the NbN superconducting hot-electron-bolometer (HEB) mixer. The sensitive element of the mixer is directly coupled to mid-IR radiation, and doesn’t have planar metallic antenna. Investigations of noise characteristics of NbN HEB mixer were performed at the frequency 28.4 THz (λ = 10.6 µm) by using gas-discharge CW CO2-laser without consideration of optical and electrical losses in the heterodyne receiver. The noise temperature of NbN HEB mixer with the size of the sensitive element 10 µm × 10 µm was 2320 K (~ 1.5hν/kB) at the heterodyne frequency of 28.4 THz. The noise temperature was determined by measuring the Y-factor taking into account the term which describes fluctuations of zero-point oscillations in accordance with the fluctuation-dissipation theorem of Calle-Welton. Isothermal method was used to estimate the absorbed heterodyne radiation power which was 9 µW at the optimal operating point for the minimum noise temperature of NbN HEB mixer.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1684-1719	ISBN		Medium
	Area		Expedition		Conference
	Notes	http://jre.cplire.ru/jre/oct17/9/abstract.html (Russian) Гетеродинный приемник со сверхпроводниковым смесителем на эффекте электронного разогрева для среднего инфракрасного диапазона			Approved	no
	Call Number				Serial	1747
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	Author	Gol’tsman, G. N.; Smirnov, K. V.
	Title	Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures			Type	Journal Article
	Year	2001	Publication	Jetp Lett.	Abbreviated Journal	Jetp Lett.
	Volume	74	Issue	9	Pages	474-479
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes	По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах			Approved	no
	Call Number				Serial	1541
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	Author	Kollberg, Erik L.; Gershenzon, E.; Goltsman, G.; Yngvesson, K. S.
	Title	Hot electron mixers, the potential competition			Type	Conference Article
	Year	1992	Publication	Proc. ESA Symp. on Photon Detectors for Space Instrumentation	Abbreviated Journal	Proc. ESA Symp. on Photon Detectors for Space Instrumentation
	Volume		Issue		Pages	201-206
	Keywords	HEB mixers
	Abstract	There is an urgent need in radio astronomy for low noise heterodyne receivers for frequencies above about 500 GHz. It is not certain that mixers based on superconducting quasiparticle tunnelling (SIS mixers) may turn out to be the answer to this need. In order to try to find an alternative way for realizing low noise heterodyne receivers for submillimeter waves, so called hot electron bolometric effects for mixing are now being investigated. Two basically different approaches are tried, one based on semiconductors and one on superconductors. Both methods are briefly discussed in this overview paper.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	ESA Symposium on Photon Detectors for Space Instrumentation
	Notes				Approved	no
	Call Number				Serial	1667
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	Author	Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Golts'man, G.; Gershenzon, E.; Voronov B.
	Title	Superconductive NbN hot-electron bolometric mixer performance at 250 GHz			Type	Conference Article
	Year	1996	Publication	Proc. 7^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 7^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	331-336
	Keywords	NbN HEB mixers
	Abstract	Thin film NbN (<40 A) strips are used as waveguide mixer elements. The electron cooling mechanism for the geometry is the electron-phonon interaction. We report a receiver noise temperature of 750 K at 244 GHz, with / IF = 1.5 GHz, Af= 500 MHz, and Tphysical = 4 K. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator (LO) power is 0.5 1.tW with 3 dB-uncertainty. The mixer is linear to 1 dB up to an input power level 6 dB below the LO power. We report the first detection of a molecular line emission using this class of mixer, and that the receiver noise temperature determined from Y-factor measurements reflects the true heterodyne sensitivity.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	945
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	Author	Lindgren, M.; Trifonov, V.; Zorin, M.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E.M.
	Title	Transient resistive photoresponse of YBa₂Cu₃O_7−δ films using low power 0.8 and 10.6 μm laser radiation			Type	Journal Article
	Year	1994	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	64	Issue	22	Pages	3036-3038
	Keywords	YBCO HTS HEB, nonequilibrium
	Abstract	Thin YBa2Cu3O7−δ laser deposited films were patterned into devices consisting of ten parallel 1 μm wide strips. Nonequilibrium picosecond and bolometric photoresponses were studied by the use of 17 ps full width at half‐maximum laser pulses and amplitude modulated radiation from an AlGaAs laser up to 10 GHz and from a CO2 laser up to 1 GHz. The time and frequency domain measurements were in agreement. The fast response can be explained by electron heating. The use of low optical power and a sensitive measurement system excluded any nonlinear transient processes and kinetic inductance changes in the superconducting state. At 1 GHz modulation frequency, the responsivity was ∼1.2 V/W both for 0.8 and 10.6 μm wavelengths. The sensitivity of a fast and spectrally broadband infrared detector is discussed.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1639
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	Author	Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W.
	Title	Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits: supplementary material			Type	Miscellaneous
	Year	2017	Publication	Optica	Abbreviated Journal
	Volume		Issue		Pages	1-9
	Keywords	Quantum detectors; Spectrometers and spectroscopic instrumentation; Nanophotonics and photonic crystals; Fluorescence correlation spectroscopy; Fluorescence resonance energy transfer; Fluorescence spectroscopy; Imaging techniques; Optical components; Quantum key distribution
	Abstract	This document provides supplementary information to “Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits", DOI:10.1364/optica.4.000557. Here we detail the on-chip spectrometer design, its characterization and the experimental setup we used. In addition, we present a detailed report concerning the characterization of the superconducting nanowire single photon detectors. In the final sections, we describe sample preparation and characterization of the nanodiamonds containing silicon vacancy color centers.
	Address
	Corporate Author				Thesis
	Publisher	Osa	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
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	Notes				Approved	no
	Call Number	Kahl:17			Serial	1218
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	Author	Morozov, P.; Lukina, M.; Shirmanova, M.; Divochiy, A.; Dudenkova, V.; Gol'tsman, G. N.; Becker, W.; Shcheslavskiy, V. I.
	Title	Singlet oxygen phosphorescence imaging by superconducting single-photon detector and time-correlated single-photon counting			Type	Journal Article
	Year	2021	Publication	Opt. Lett.	Abbreviated Journal	Opt. Lett.
	Volume	46	Issue	6	Pages	1217-1220
	Keywords	SSPD, SNSPD, applications
	Abstract	This Letter presents, to the best of our knowledge, a novel optical configuration for direct time-resolved measurements of luminescence from singlet oxygen, both in solutions and from cultured cells on photodynamic therapy. The system is based on the superconducting single-photon detector, coupled to the confocal scanner that is modified for the near-infrared measurements. The recording of a phosphorescence signal from singlet oxygen at 1270 nm has been done using time-correlated single-photon counting. The performance of the system is verified by measuring phosphorescence from singlet oxygen generated by the photosensitizers commonly used in photodynamic therapy: methylene blue and chlorin e6. The described system can be easily upgraded to the configuration when both phosphorescence from singlet oxygen and fluorescence from the cells can be detected in the imaging mode. Thus, co-localization of the signal from singlet oxygen with the areas inside the cells can be done.
	Address
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	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0146-9592	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:33720151			Approved	no
	Call Number				Serial	1221
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	Author	Zolotov, P. I.; Vakhtomin, Yu. B.; Divochiy, A. V.; Seleznev, V. A.; Smirnov, K. V.
	Title	Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons			Type	Journal Article
	Year	2016	Publication	Proc. 5th Int. Conf. Photonics and Information Optics	Abbreviated Journal	Proc. 5th Int. Conf. Photonics and Information Optics
	Volume		Issue		Pages	115-116
	Keywords	NbN SSPD
	Abstract	This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-7262-2215-8	Medium
	Area		Expedition		Conference
	Notes	http://fioconf.mephi.ru/files/2015/12/FIO2016-Sbornik.pdf Разработка технологии создания резонаторных структур для увеличения квантовой эффективности NBN детекторов ИК-фотонов			Approved	no
	Call Number				Serial	1811
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