|
Records |
Links |
|
Author |
Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
Type |
Journal Article |
|
Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
|
|
Volume |
73 |
Issue |
1 |
Pages |
44-47 |
|
|
Keywords |
uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
|
|
Abstract |
The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-3640 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1752 |
|
Permanent link to this record |
|
|
|
|
Author |
Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Механизм преобразования частоты в n-InSb-смесителе |
Type |
Journal Article |
|
Year |
1991 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
|
Volume |
25 |
Issue |
11 |
Pages |
1986-1998 |
|
|
Keywords |
n-InSb mixer |
|
|
Abstract |
Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн. |
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
Russian |
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1753 |
|
Permanent link to this record |
|
|
|
|
Author |
Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.; Гусинский, Э. Н.; Литвак-Горская, Л. Б. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла |
Type |
Journal Article |
|
Year |
1990 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
|
Volume |
24 |
Issue |
12 |
Pages |
2145-2150 |
|
|
Keywords |
Hall constant, concentration of impurities, p-Si |
|
|
Abstract |
На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая. |
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
Russian |
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1754 |
|
Permanent link to this record |
|
|
|
|
Author |
Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Влияние магнитного поля на захват свободных носителей мелкими примесями в Ge |
Type |
Journal Article |
|
Year |
1990 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
|
Volume |
24 |
Issue |
10 |
Pages |
1881-1883 |
|
|
Keywords |
impurities, photoconductivity, Ge, capture of free carriers, magnetic field |
|
|
Abstract |
Цель настоящей работы — измерение кинетики примесной фотопроводимости в квантующих магнитных полях. |
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
Russian |
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1755 |
|
Permanent link to this record |
|
|
|
|
Author |
Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Кинетические явления в компенсированном n-InSb при низких температурах |
Type |
Journal Article |
|
Year |
1990 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
|
Volume |
24 |
Issue |
1 |
Pages |
3-24 |
|
|
Keywords |
compensated n-InSb, impurities |
|
|
Abstract |
Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb. |
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
Russian |
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1756 |
|
Permanent link to this record |
|
|
|
|
Author |
Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Особенности температурной зависимости холловской подвижности в легированных и некомпенсированных полупроводниках |
Type |
Journal Article |
|
Year |
1989 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
|
Volume |
23 |
Issue |
2 |
Pages |
338-345 |
|
|
Keywords |
weakly compensated Si, Ge, doped, Hall mobility |
|
|
Abstract |
На примере легированного и слабо компенсированного Si⟨B⟩ проведены исследования особенностей температурной зависимости подвижности при различных механизмах рассеяния. Уточнен метод определения концентрации компенсирующей примеси по μI(T). Полученные результаты обсуждаются и для Ge. |
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1758 |
|
Permanent link to this record |
|
|
|
|
Author |
Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ |
Type |
Journal Article |
|
Year |
1986 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
|
Volume |
20 |
Issue |
1 |
Pages |
99-103 |
|
|
Keywords |
n-Ge, Hubbard upper zone conductivity, negative magnetoresistance |
|
|
Abstract |
В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. |
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1759 |
|
Permanent link to this record |
|
|
|
|
Author |
Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца |
Type |
Journal Article |
|
Year |
1985 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
|
Volume |
19 |
Issue |
9 |
Pages |
1696-1698 |
|
|
Keywords |
uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation |
|
|
Abstract |
|
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1760 |
|
Permanent link to this record |
|
|
|
|
Author |
Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
О механизме динамического сужения линии ЭПР доноров фосфора в кремнии |
Type |
Journal Article |
|
Year |
1984 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
|
Volume |
18 |
Issue |
3 |
Pages |
421-425 |
|
|
Keywords |
Si, phosphorus donors, EPR |
|
|
Abstract |
Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам. |
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1761 |
|
Permanent link to this record |
|
|
|
|
Author |
Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Об одном способе определения концентрации глубоких примесей в германии |
Type |
Journal Article |
|
Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
|
Volume |
17 |
Issue |
10 |
Pages |
1896-1898 |
|
|
Keywords |
Ge, deep impurities |
|
|
Abstract |
|
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1762 |
|
Permanent link to this record |
|
|
|
|
Author |
Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда |
Type |
Journal Article |
|
Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
|
Volume |
17 |
Issue |
10 |
Pages |
1873-1876 |
|
|
Keywords |
compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance |
|
|
Abstract |
|
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1763 |
|
Permanent link to this record |
|
|
|
|
Author |
Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси |
Type |
Journal Article |
|
Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
|
Volume |
17 |
Issue |
3 |
Pages |
499-501 |
|
|
Keywords |
shallow neutral impurities, capture, inverse distribution function, Si |
|
|
Abstract |
|
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1764 |
|
Permanent link to this record |
|
|
|
|
Author |
Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Electron–phonon interaction in disordered conductors |
Type |
Journal Article |
|
Year |
1999 |
Publication |
Phys. Rev. B Condens. Matter |
Abbreviated Journal |
Phys. Rev. B Condens. Matter |
|
|
Volume |
263-264 |
Issue |
|
Pages |
190-192 |
|
|
Keywords |
disordered conductors, electron-phonon interaction |
|
|
Abstract |
The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. |
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0921-4526 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1765 |
|
Permanent link to this record |
|
|
|
|
Author |
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
Type |
Journal Article |
|
Year |
1997 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
|
|
Volume |
56 |
Issue |
16 |
Pages |
10089-10096 |
|
|
Keywords |
disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity |
|
|
Abstract |
The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0163-1829 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1766 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
Type |
Journal Article |
|
Year |
1975 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
|
|
Volume |
40 |
Issue |
2 |
Pages |
311-315 |
|
|
Keywords |
Ge, cyclotron resonance |
|
|
Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
|
|
Address ![sorted by Address field, descending order (down)](img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1768 |
|
Permanent link to this record |