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	Author	Финкель, М. И.; Масленников, С. Н.; Гольцман, Г. Н.
	Title	Концепция приёмного комплекса космического радиотелескопа «Миллиметрон»			Type	Journal Article
	Year	2007	Publication	Известия высших учебных заведений. Радиофизика	Abbreviated Journal
	Volume	50	Issue	10-11	Pages	924-934
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ s @ mix_review_2007_rus			Serial	410
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	Author	Kawamura, Jonathan; Blundell, Raymond; Tong, C.-Y. Edward; Papa, D. Cosmo; Hunter, Todd R.; Paine, Scot.t. N.; Patt, Ferdinand; Gol'tsman, Gregory; Cherednichenko, Sergei; Voronov, Boris; Gershenzon, Eugene
	Title	Superconductive hot-electron bolometer mixer receiver for 800 GHz operation			Type	Miscellaneous
	Year	2000	Publication	IEEE Trans. Microwave Theory and Techniques	Abbreviated Journal	IEEE Trans. Microwave Theory and Techniques
	Volume	48	Issue	4	Pages	683-689
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ s @ Kawamura_superconductivehot-electron			Serial	424
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	Author	Финкель, М. И.; Масленников, С. Н.; Гольцман, Г. Н.
	Title	Супергетеродинные терагерцовые приёмники со сверхпроводниковым смесителем на электронном разогреве			Type	Journal Article
	Year	2005	Publication	Известия высших учебных заведений. Радиофизика	Abbreviated Journal
	Volume	48	Issue	10	Pages	964-970
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 381			Approved	no
	Call Number				Serial	380
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	Author	Gol'tsman, G.; Korneev, A.; Minaeva, O.; Antipov, A.; Divochiy, A.; Kaurova, N.; Voronov, B.; Pan, D.; Cross, A.; Pearlman, A.; Komissarov, I.; Slysz, W.; Sobolewski, R.
	Title	Middle-infrared to visible-light ultrafast superconducting single-photon detector			Type	Conference Article
	Year	2006	Publication	Proc. ASC	Abbreviated Journal
	Volume		Issue		Pages
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Seattle	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ s @ SSPD_cavity_ASC			Serial	389
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	Author	Гершензон, Е. М.; Гершензон, М. Е.; Гольцман, Г. Н.; Семенов, А. Д.; Сергеев, А. В.
	Title	Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии			Type	Journal Article
	Year	1982	Publication	Письма в ЖЭТФ	Abbreviated Journal	Письма в ЖЭТФ
	Volume	36	Issue	7	Pages	241-244
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1717			Approved	no
	Call Number	MSPU @ s @			Serial	225
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	Author	Гершензон, Е. М.
	Title	Воздействие электромагнитного излучения на сверхпроводящую плёнку ниобия в резистивном состоянии			Type	Conference Article
	Year	1982	Publication	Тезисы докладов 22 Всесоюзной конференции по физике низких температур	Abbreviated Journal
	Volume		Issue		Pages	79-80
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	231
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	Author	Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H. W.; Svechnikov, S.; Voronov, B.; Gol'tsman, G.; Wang, Z.
	Title	Hot electron bolometric mixers based on NbN films deposited on MgO substrates			Type	Conference Article
	Year	1999	Publication	Inst. Phys. Conf. Ser.	Abbreviated Journal	Inst. Phys. Conf. Ser.
	Volume	167	Issue		Pages	687-690
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Barcelona, Spain	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	4th Europ. Conf. on Appl. Superconductivity, Inst. Phys. Conf. Ser.
	Notes				Approved	no
	Call Number				Serial	297
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	Author	Maslennikov, S.; Antipov, S.; Shishkov, A.; Svechnikov, S.; Voronov, B.; Smirnov, K.; Kaurova, N.; Drakinski, V.; Gol'tsman, G.
	Title	NbN HEB mixer noise temperature measurements with hot/cold load mounted inside the helium cryostat at 300 GHz			Type	Conference Article
	Year	2002	Publication	Proc. Int. Student Seminar on Microwave Appl. of Novel Physical Phenomena supported by IEEE	Abbreviated Journal
	Volume		Issue		Pages
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	LETI	Place of Publication	St.-Petersburg	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	324
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	Author	Ozhegov, R.; Morozov, D.; Maslennikov, S.; Okunev, O.; Smirnov, K.; Gol'tsman, G.
	Title	Submillimeter wave range imaging system for registering human body radiation and finding out the things covered under clothes			Type	Conference Article
	Year	2004	Publication	Proc. 3rd Int. exhibition and conf. Non-Destructive Testing Equipment and Devices	Abbreviated Journal
	Volume		Issue		Pages
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Moscow	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	345
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	Author	Ожегов, Р. В.; Морозов, Д. В.; Масленников, С. Н.; Смирнов, К. В.; Окунев, О. В.; Гольцман, Г. Н.
	Title	Тепловизор субмиллиметрового диапазона волн для регистрации теплового излучения тела человека и обнаружения скрытых под одеждой предметов			Type	Conference Article
	Year	2004	Publication	3-я Международная выставка и конференция Неразрушающий контроль и техническая диагностика в промышленности	Abbreviated Journal
	Volume		Issue		Pages
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Москва	Editor
	Language	russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 345			Approved	no
	Call Number				Serial	346
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	Author	Ozhegov, R.; Maslennikov, S.; Morozov, D.; Okunev, O.; Smirnov, K.; Gol'tsman, G.
	Title	Imaging system for submillimeter wave range			Type	Conference Article
	Year	2004	Publication	Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10)	Abbreviated Journal
	Volume		Issue		Pages
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Moscow	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ s @ thzimaging_vnksf10_2004			Serial	347
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	Author	Ожегов, Р. В.; Масленников, С. Н.; Морозов, Д. В.; Окунев, О. В.; Смирнов, К. В.; Гольцман, Г. Н.
	Title	Тепловизор субмиллиметрового диапазона длин волн			Type	Conference Article
	Year	2004	Publication	Десятая всероссийская научная конференция студентов-физиков и молодых ученых (ВНКСФ-10)	Abbreviated Journal
	Volume		Issue		Pages
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Москва	Editor
	Language	russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 347			Approved	no
	Call Number	RPLAB @ s @ thzimaging_vnksf10_2004_rus			Serial	348
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	Author	Maslennikov, S.; Vachtomin, Yu.; Antipov, S.; Smirnov, K.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G.
	Title	NbN HEB mixers for frequencies of 2.5 and 3.8 THz			Type	Conference Article
	Year	2004	Publication	Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10)	Abbreviated Journal
	Volume		Issue		Pages
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Moscow	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ s @ qoheb_vnksf10_2004			Serial	349
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	Author	Масленников, С. Н.; Вахтомин, Ю. Б.; Антипов, С. В.; Смирнов, К. В.; Каурова, Н. С.; Гришина, Е. В.; Воронов, Б. М.; Гольцман, Г. Н.
	Title	Смесители на основе электронного разогрева в тонких пленках NbN для частот 2.5 и 3.8 ТГц			Type	Conference Article
	Year	2004	Publication	Десятая всероссийская научная конференция студентов-физиков и молодых ученых (ВНКСФ-10)	Abbreviated Journal
	Volume		Issue		Pages
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Москва	Editor
	Language	russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 349			Approved	no
	Call Number	RPLAB @ s @ qoheb_vnksf10_2004_rus			Serial	350
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	Author	Vachtomin, Yu. B.; Antipov, S. V.; Kaurova, N. S.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Svechnikov, S. I.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N.
	Title	Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess			Type	Conference Article
	Year	2004	Publication	Proc. 29th IRMMW / 12th THz	Abbreviated Journal	Proc. 29th IRMMW / 12th THz
	Volume		Issue		Pages	329-330
	Keywords
	Abstract	We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area.
	Address	Karlsruhe, Germany
	Corporate Author				Thesis
	Publisher		Place of Publication	Karlsruhe, Germany	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ s @ nt_ifb_lopow_qoheb_karlsruhe_2004			Serial	354
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	Author	Каурова, Н. С.; Финкель, М. И.; Масленников, С. Н.; Вахтомин, Ю. Б.; Антипов, С. В.; Смирнов, К. В.; Воронов, Б. М.; Гольцман, Г. Н.; Ильин, К. С.
	Title	Смеситель субмиллиметрового диапазона длин волн на основе тонкой пленки YBa₂Cu₃O_7-x			Type	Conference Article
	Year	2004	Publication	1-я международная конференция Фундаментальные проблемы высокотемпературной сверхпроводимости	Abbreviated Journal
	Volume		Issue		Pages	291
	Keywords
	Abstract
	Address	Москва-Звенигород
	Corporate Author				Thesis
	Publisher		Place of Publication	Москва-Звенигород	Editor
	Language	russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ s @ htsmix_zvenigorod_2004_rus			Serial	356
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	Author	Корнеев, Александр Александрович
	Title	Квантовая эффективность и темновой счет NbN сверхпроводникового инфракрасного однофотонного детектора			Type	Manuscript
	Year	2006	Publication	М. МПГУ	Abbreviated Journal
	Volume		Issue		Pages
	Keywords
	Abstract
	Address
	Corporate Author				Thesis	Ph.D. thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	480
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	Author	Морозов, Дмитрий Владимирович
	Title	Приемные устройства терагерцового диапазона на эффекте разогрева двумерного электронного газа в гетероструктурах AlGaAs/GaAs			Type	Manuscript
	Year	2007	Publication	М. МПГУ	Abbreviated Journal
	Volume		Issue		Pages
	Keywords
	Abstract
	Address
	Corporate Author				Thesis	Ph.D. thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ s @			Serial	626
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	Author	Maslennikova, Anna; Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Kaurova, Natalia; Voronov, Boris; Gol’tsman, Gregory
	Title	Gain bandwidth and noise temperature of NbN HEB mixers with simultaneous phonon and diffusion cooling			Type	Abstract
	Year	2010	Publication	Proc. 21^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 21^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	218-219
	Keywords
	Abstract	The space observatory Millimetron will be operating in the millimeter, sub-millimeter and infrared ranges using a 12-m cryogenic telescope in a single-dish mode, and as an interferometer with the space-earth and space-space baselines (the latter after the launch of the second identical space telescope). The observatory will allow performing astronomical observations with an unprecedented sensitivity (down to nJy level) in the single-dish mode, and observations with a high angular resolution in the interferometer mode. The total spectral range 20 μm – 2 cm is separated into 10 bands. HEB mixers with two cooling channels (diffusion and phonon) have been chosen to be the detectors of choice of the system covering the range from 1 THz to 6 THz as the best detectors in terahertz receivers. This type of HEB has already shown good work in the terahertz range. A gain bandwidth of 6 GHz at an LO frequency of 300 GHz and a noise temperature of 750 K at an LO frequency of 2.5 THz are the best values for HEB mixers with two cooling channels [1]. Theoretical estimations predict a bandwidth up to 12 GHz. Reaching such good result demands more systematic and thorough research. We present the results of the gain bandwidth and noise temperature measurements for superconducting hot- electron bolometer mixers with two cooling channels. These characteristics of the devices of lengths varying from 50 to 200 nm were measured for the purposes of Millimetron at frequencies of 600 GHz, 2.5 THz, and 3.8 THz. For gain bandwidth measurements we use two BWO’s operating at 600 GHz: one as the signal and the second as the LO. The noise temperature measurements were performed using a gas discharge laser as the LO and blackbodies at 77 K and 295 K as input signals. The devices studied consist of 3.5-nm-thick NbN bridges connected to thick (10 nm) high conductivity Au leads fabricated in situ. This method of fabricating devices has already proved promising by opening the diffusion cooling channel. [2] Fig. 1 shows a SEM photograph of a log-spiral antenna with an HEB at its apex. Fig. 1. Left: a SEM photograph of a log-spiral antenna with an HEB at its apex; right: a close-up of the HEB at the antenna apex. [1] S. A. Ryabchun, I. V. Tretyakov, M. I. Finkel, S. N. Maslennikov, N. S. Kaurova, V. A. Seleznev, B. M. Voronov, and G. N. Gol’tsman, NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling, Proc. of the 20 th Int. Symp. Space. Technol., Charlottesville, Virginia, USA, April 20 – 22, 2009. 218[2] S. A. Ryabchun * , I. V. Tretyakov, M. I. Finkel, S. N. Maslennikov, N. S. Kaurova, V. A. Seleznev, B. M. Voronov and G. N. Goltsman, Fabrication and characterisation of NbN HEB mixers with in situ gold contacts, Proc. of the 19 th Int. Symp. Space. Technol., Groningen, The Netherlands, April 28-30, 2008
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1393
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	Author	Третьяков, И.В.; Рябчун, С.А.; Каурова, Н.С.; Ларионов, П.А.; Лобастова, А.А.; Воронов, Б.М.; Финкель, М.И.; Гольцман, Г.Н.
	Title	Оптимальная поглощенная мощность гетеродина для терагерцового сверхпроводникового NbN смесителя на электронном разогреве			Type	Journal Article
	Year	2010	Publication	Письма в Журнал технической физики	Abbreviated Journal	Письма в ЖТФ
	Volume	36	Issue	23	Pages	78-84
	Keywords
	Abstract	Представлены результаты измерений поглощенной мощности гетеродина малошумящим широкополосным смесителем на эффекте электронного разогрева в резистивном состоянии сверхпроводниковой ультратонкой пленки NbN. Оптимальная поглощенная мощность гетеродина составила около 100 nW на частоте 2.5 THz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ gujma @			Serial	703
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	Author	Ожегов, Р.В.; Горшков, К.Н.; Окунев, О.В.; Гольцман, Г.Н.
	Title	Сверхпроводниковый смеситель на эффекте электронного разогрева как элемент матрицы системы построения тепловых изображений			Type	Journal Article
	Year	2010	Publication	Письма в Журнал технической физики	Abbreviated Journal	Письма в ЖТФ
	Volume	36	Issue	21	Pages	70-78
	Keywords
	Abstract	Исследована возможность использования матрицы чувствительных элементов на гиперполусферической линзе диаметром 12 mm в тепловизоре терагерцевого диапазона частот. Получены размеры области на линзе, приемлемой для расположения матрицы, в которой шумовая температура приемника меняется в пределах 16% от средней. Диаметр этой области составил 3.3% диаметра линзы.Получены отклонения основного лепестка диаграммы направленности, которые составили ±1.25â—<a6> от направления с оптимальным положением смесителя. Флуктуационная чувствительность приемника в эксперименте составила 0.5 K на частоте 300 GHz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ gujma @			Serial	704
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	Author	Ожегов, Р. В.; Окунев, О. В.; Гольцман, Г. Н.; Филиппенко, Л. В.; Кошелец, В. П.
	Title	Флуктуационная чувствительность сверхпроводящего интегрального приемника терагерцового диапазона частот			Type	Journal Article
	Year	2009	Publication	Радиотехника и электроника	Abbreviated Journal	Радиотех. электроник.
	Volume	54	Issue	6	Pages	750-755
	Keywords
	Abstract	Исследована зависимость флуктуационной чувствительности сверхпроводящего интегрального приемника (СИП) от шумовой температуры приемника и величины входного сигнала. Измерена рекордная флуктуационная чувствительность приемника (13 ± 2 мК), полученная при шумовой температуре приемника 200 К, ширине полосы промежуточных частот 4 ГГц и постоянной времени 1 с. При уменьшении входного сигнала наблюдалось улучшение флуктуационной чувствительности; предложено обÑŠяснение полученного эффекта: причиной является уменьшение влияния нестабильностей источников питания приемника и усилительного тракта при снижении входного сигнала.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ gujma @			Serial	710
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	Author	Расулова, Г.К.; Брунков, П.Н.; Пентин, И.В.; Ковалюк, В.В.; Горшков, К.Н.; Казаков, А.Ю.; Иванов, С.Ю.; Егоров, А.Ю.; Саксеев, Д.А.; Конников, С.Г.
	Title	Взаимная синхронизация двух связанных генераторов автоколебаний на основе сверхрешеток GaAs/AlGaAs			Type	Journal Article
	Year	2011	Publication	Журнал технической физики	Abbreviated Journal	ЖТФ
	Volume	81	Issue	6	Pages	80-86
	Keywords
	Abstract	Проведено исследование взаимодействия генераторов автоколебаний на основе 30-периодной слабосвязанной сверхрешетки GaAs/AlGaAs. Воздействие одного генератора автоколебаний на другой осуществлялось при заданном постоянном смещении в отсутствие в одном из них генерации автономных колебаний. Показано, что вынужденные колебания в захватывающем генераторе возникают из-за возбуждения колебаний в системе связанных осцилляторов, образующих границу электрополевого домена на частоте одной из высших гармоник вынуждающего колебания.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
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	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ gujma @			Serial	711
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	Author	Гольцман, Г. Н.; Разумовская, И. В.; Окунев, О. В; Чулкова, Г. М.; Корнеев, А. А.; Финкель, М. И.; Масленников, С. Н.; Семенов, А. В.; Александров, В. Н.
	Title	Сборник программ учебных дисциплин профессионального цикла подготовки магистров и бакалавров по направлению «Физика»			Type	Journal Article
	Year	2011	Publication	Прометей	Abbreviated Journal	Прометей
	Volume		Issue		Pages	67
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Учебное пособие			Approved	no
	Call Number	RPLAB @ gujma @			Serial	717
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	Author	Смирнов, Андрей Владимирович
	Title	Исследование полосы преобразования терагерцовых смесителей на эффекте электронного разогрева в NbZr, NbN и в одиночном гетеропереходе AlGaAs/GaAs			Type	Manuscript
	Year	2009	Publication	Радиофизика	Abbreviated Journal	Радиофиз.
	Volume		Issue		Pages	139
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Диссертация			Approved	no
	Call Number	RPLAB @ gujma @			Serial	718
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	Author	Seleznev, V. A.; Tarkhov, M. A.; Voronov, B. M.; Milostnaya, I. I.; Lyakhno, V. Yu; Garbuz, A. S.; Mikhailov, M. Yu; Zhigalina, O. M.; Gol'tsman, G. N.
	Title	Deposition and characterization of few-nanometers-thick superconducting Mo-Re films			Type	Journal Article
	Year	2008	Publication	Supercond. Sci. Technol.	Abbreviated Journal	Supercond. Sci. Technol.
	Volume	21	Issue	11	Pages	115006 (1 to 6)
	Keywords
	Abstract	We report on the fabrication and investigation of few-nanometers-thick superconducting molybdenum-rhenium (Mo-Re) films intended for use in nanowire single-photon superconducting detectors (SSPDs). Mo-Re films were deposited on sapphire substrates by DC magnetron sputtering of an Mo(60)-Re(40) alloy target in an atmosphere of argon. The films 2-10 nm thick had critical temperatures (Tc) from 5.6 to 9.7 K. HRTEM (high-resolution transmission electron microscopy) analysis showed that the films had a homogeneous structure. XPS (x-ray photoelectron spectroscopy) analysis showed the Mo to Re atom ratio to be 0.575/0.425, oxygen concentration to be 10%, and concentration of other elements to be 1%.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ gujma @			Serial	723
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	Author	Bell, M.; Sergeev, A.; Mitin, V.; Bird, J.; Verevkin, A.; Gol'tsman, G.
	Title	One-dimensional resistive states in quasi-two-dimensional superconductors			Type	Journal Article
	Year	2007	Publication	arXiv:0709.0709v1 [cond-mat.supr-con]	Abbreviated Journal
	Volume		Issue		Pages	1-11
	Keywords
	Abstract	We investigate competition between one- and two-dimensional topological excitations – phase slips and vortices – in formation of resistive states in quasi-two-dimensional superconductors in a wide temperature range below the mean-field transition temperature T(C0). The widths w = 100 nm of our ultrathin NbN samples is substantially larger than the Ginzburg-Landau coherence length Î¾ = 4nm and the fluctuation resistivity above T(C0) has a two-dimensional character. However, our data shows that the resistivity below T(C0) is produced by one-dimensional excitations, – thermally activated phase slip strips (PSSs) overlapping the sample cross-section. We also determine the scaling phase diagram, which shows that even in wider samples the PSS contribution dominates over vortices in a substantial region of current/temperature variations. Measuring the resistivity within seven orders of magnitude, we find that the quantum phase slips can only be essential below this level.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ atomics90 @			Serial	948
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	Author	Dzardanov, A.; Ekstrom, H.; Gershenzon, E.; Gol'tsman, G.; Jacobsson, S.; Karasik, B.; Kollberg, E.; Okunev, O.; Voronov, B.; Yngvesson, S.
	Title	Hot-electron superconducting mixers for 20-500 GHz operation			Type	Conference Article
	Year	1994	Publication	Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl.	Abbreviated Journal
	Volume	2250	Issue	4D	Pages	276-278
	Keywords
	Abstract	Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ phisix @			Serial	981
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	Author	Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R.
	Title	Character of submillimeter photoconductivity in n-lnSb			Type	Journal Article
	Year	1979	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	49	Issue	1	Pages	121-128
	Keywords
	Abstract	A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ phisix @			Serial	985
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	Author	Ptitsina N. G.; Chulkova G. M.; Il'in K. S.; Sergeev A. V.; Pochinkov F. S.; Gershenzon E. M.
	Title	Superconductivity has been found in a number of new compounds between the non-superconducting transition elements and nonmetals such as Si, Ge, and Te. These findings have suggested possible criteria for superconductivity in both elements and compounds.			Type	Journal Article
	Year	1997	Publication	Phys. Rev. B	Abbreviated Journal	Phys. Rev. B
	Volume	56	Issue	16	Pages
	Keywords
	Abstract	The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path L=1.5– 10 nm has been measured at 4.2–300 K. The resistance of all the films contains a T^2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference â€žM. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 ~1987! @Sov. Phys. JETP 65, 1291 ~1987!#â€¦, we obtain constants of nteraction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electronphonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
	Address
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	Language		Summary Language		Original Title
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	Notes				Approved	no
	Call Number	RPLAB @ phisix @			Serial	988
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	Author	Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M.
	Title	Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films			Type	Journal Article
	Year	1995	Publication	JETP	Abbreviated Journal	JETP
	Volume	80	Issue	5	Pages	960-964
	Keywords
	Abstract	The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ phisix @			Serial	989
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	Author	Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Minaeva, O.; Kaurova, N.; Divochiy, A.; Korneev, A.; Tarkhov, M.; Voronov, B.; Milostnaya, I.; Gol'tsman, G.; Sobolewski, R.
	Title	Fluctuations in two-dimensional superconducting NbN nanobridges and nanostructures meanders			Type	Abstract
	Year	2007	Publication	Proc. APS March Meeting	Abbreviated Journal	Proc. APS March Meeting
	Volume	52	Issue	1	Pages	L9.00013
	Keywords
	Abstract	We have observed fluctuations, manifested as sub-nanosecond to nanosecond transient, millivolt-amplitude voltage pulses, generated in two-dimensional NbN nanobridges, as well as in extended superconducting meander nanostructures, designed for single photon counting. Both nanobridges and nano-stripe meanders were biased at currents close to the critical current and measured in a range of temperatures from 1.5 to 8 K. During the tests, the devices were blocked from all incoming radiation by a metallic enclosure and shielded from any external magnetic fields. We attribute the observed spontaneous voltage pulses to the Kosterlitz-Thouless-type fluctuations, where the high enough applied bias current reduces the binding energy of vortex-antivortex pairs and, subsequently, thermal fluctuations break them apart causing the order parameter to momentarily reduce to zero, which in turn causes a transient voltage pulse. The duration of the voltage pulses depended on the device geometry (with the high-kinetic inductance meander structures having longer, nanosecond, pulses) while their rate was directly related to the biasing current as well as temperature.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1027
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	Author	Smirnov, Konstantin; Vachtomin, Yury; Divochiy, Alexander; Antipov, Andrey; Goltsman, Gregory
	Title	Dependence of dark count rates in superconducting single photon detectors on the filtering effect of standard single mode optical fibers			Type	Journal Article
	Year	2015	Publication	Appl. Phys. Express	Abbreviated Journal	Appl. Phys. Express
	Volume	8	Issue	2	Pages	022501 (1 to 4)
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	IOP Publishing	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1882-0778	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ sasha @ smirnov2015dependence			Serial	1049
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	Author	Sidorova, Maria V.; Divochiy, Alexander; Vakhtomin, Yury B.; Smirnov, Konstantin V.
	Title	Ultrafast superconducting single-photon detector with reduced-size active area coupled to a tapered lensed single-mode fiber			Type	Conference Article
	Year	2015	Publication	Proc. SPIE	Abbreviated Journal
	Volume	9504	Issue		Pages	950408 (1 to 9)
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	International Society for Optics and Photonics
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ sasha @ sidorova2015ultrafast			Serial	1051
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	Author	Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V.
	Title	Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system			Type	Conference Article
	Year	2017	Publication	EPJ Web of Conferences	Abbreviated Journal	EPJ Web of Conferences
	Volume	132	Issue	2	Pages	2
	Keywords
	Abstract	Recently bright-light control of the SSPD has been demonstrated. This attack employed a â€œbackdoorâ€ in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains â€œlatchedâ€ in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
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	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1116
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	Author	Peltonen, J. T.; Peng, Z. H.; Korneeva, Yu. P.; Voronov, B. M.; Korneev, A. A.; Semenov, A. V.; Gol'tsman, G. N.; Tsai, J. S; Astafiev, Oleg
	Title	Coherent dynamics and decoherence in a superconducting weak link			Type	Journal Article
	Year	2016	Publication	Physic. Rev. B,	Abbreviated Journal	Physic. Rev. B,
	Volume	94	Issue		Pages	180508
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
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	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ akorneev @			Serial	1123
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	Author	Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Room temperature silicon detector for IR range coated with Ag₂S quantum dots			Type	Journal Article
	Year	2019	Publication	Phys. Status Solidi RRL	Abbreviated Journal	Phys. Status Solidi RRL
	Volume	13	Issue	9	Pages	1900187-(1-6)
	Keywords
	Abstract	For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1862-6254	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1149
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	Author	Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G.
	Title	Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer			Type	Journal Article
	Year	2018	Publication	Microelectronic Engineering	Abbreviated Journal	Microelectronic Engineering
	Volume	195	Issue		Pages	26-31
	Keywords
	Abstract	In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0167-9317	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1155
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	Author	Divochiy, A.; Misiaszek, M.; Vakhtomin, Y.; Morozov, P.; Smirnov, K.; Zolotov, P.; Kolenderski, P.
	Title	Single photon detection system for visible and infrared spectrum range			Type	Journal Article
	Year	2018	Publication	Opt. Lett.	Abbreviated Journal	Opt. Lett.
	Volume	43	Issue	24	Pages	6085-6088
	Keywords
	Abstract	We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452-2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric downconversion, where one photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as high as 4x10(4) in our detection setting. A photon detection efficiency as high as 64% at 1550 nm and 15% at 2300 nm was observed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0146-9592	ISBN		Medium
	Area		Expedition		Conference
	Notes	https://arxiv.org/abs/1807.04273			Approved	no
	Call Number				Serial	1227
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	Author	Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Seleznev, V.; Morozov, P.; Smirnov, K.
	Title	Superconducting single-photon detectors made of ultra-thin VN films			Type	Conference Article
	Year	2018	Publication	KnE Energy	Abbreviated Journal	KnE Energy
	Volume	3	Issue	3	Pages	83-89
	Keywords
	Abstract	We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1230
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	Author	Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N.
	Title	Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder			Type	Miscellaneous
	Year	2019	Publication	arXiv	Abbreviated Journal	arXiv
	Volume		Issue		Pages	1-10
	Keywords
	Abstract	We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of ∼1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
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	Corporate Author				Thesis
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	Notes				Approved	no
	Call Number				Serial	1278
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	Author	Bandurin, Denis; Svintsov, Dmitry; Gayduchenko, Igor; Xu, Shuigang; Principi, Alessandro; Moskotin, Maksim; Tretyakov, Ivan; Yagodkin, Denis; Zhukov, Sergey; Taniguchi, Takashi; Watanabe, Kenji; Grigorieva, Irina; Polini, Marco; Goltsman, Gregory; Geim, Andre; Fedorov, Georgy
	Title	Resonant terahertz photoresponse and superlattice plasmons in graphene field-effect transistors			Type	Abstract
	Year	2019	Publication	APS March Meeting	Abbreviated Journal	APS March Meeting
	Volume		Issue		Pages	F14.015
	Keywords
	Abstract	Plasmons, collective oscillations of electron systems, can couple light and electric current, and thus can be used to create compact photodetectors, radiation mixers, and spectrometers. Despite the effort, it has proven challenging to implement plasmonic devices operating at THz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically-tunable plasmons. In this talk, we will demonstrate plasmon-assisted resonant detection of THz radiation by antenna-coupled graphene FETs that act as both rectifying elements and plasmonic Fabry-Perot cavities amplifying the photoresponse. We will show that by varying the plasmon velocity using gate voltage, our detectors can be tuned between multiple resonant modes, a functionality that we apply to measure plasmons' wavelength and lifetime in graphene as well as to probe collective modes in its moire minibands. Our approach offers a convenient tool for further plasmonic research that is often difficult under non-ambient conditions and promises a viable route for various THz applications. We acknowledge Leverhulme Trust, Russian Science Foundation Grants N18-72-00234 and 17-72-30036, Russian Foundation for Basic Research No. 18-57-06001 and 16-29-03402.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Notes				Approved	no
	Call Number				Serial	1290
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	Author	Korneev, A.; Semenov, A.; Vodolazov, D.; Gol’tsman, G. N.; Sobolewski, R.
	Title	Physics and operation of superconducting single-photon devices			Type	Book Chapter
	Year	2017	Publication	Superconductors at the Nanoscale	Abbreviated Journal
	Volume		Issue		Pages	279-308
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	De Gruyter	Place of Publication		Editor	Wördenweber, R.; Moshchalkov, V.; Bending, S.; Tafuri, F.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
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	Notes				Approved	no
	Call Number				Serial	1326
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	Author	Mehdi, I.; Gol'tsman, G.; Putz, P.
	Title	Introduction to the mini-special-issue on the 25th international symposium on space terahertz technology (ISSTT)			Type	Miscellaneous
	Year	2015	Publication	IEEE Trans. THz Sci. Technol.	Abbreviated Journal	IEEE Trans. THz Sci. Technol.
	Volume	5	Issue	1	Pages	14-15
	Keywords
	Abstract	THE 25th International Symposium on Space Terahertz Technology (ISSTT) was held in Moscow, Russia, between April 27–30, 2014. The conference was organized by Moscow State Pedagogical University and the Higher School of Economics (National Research University) and Chaired by Professor Gregory Gol'tsman of Moscow State Pedagogical University. The conference was attended by roughly 150 participants from 15 countries. The technology covered by ISSTT includes detectors, devices, circuits and systems in various areas of THz science and technology. Each year this symposium brings together the global THz space science technology community, and as such, emphasizes the broad international collaboration that is required to execute these large complicated instrument programs that dominate this field. However, talks covering technologies for balloon, aircraft, and ground-based telescopes were also presented. In this special section of IEEE Transactions on Terahertz Science and Technology, we include eight expanded papers from the 25th ISSTT symposium. The papers range from development of SIS mixers to optical adjustment systems for radio telescopes. The 26th ISSTT will be held in Boston, MA, USA, during March 16–18, 2015. Researchers and scientist involved in THz research are invited to attend this symposium (more details are at http://www.cfa.harvard.edu/events/2015/isstt2015/). You can access the full list of papers presented at the ISSTT symposia from the National Radio Astronomy Observatory website: http://www.nrao.edu/meetings/isstt/index.shtml Yours sincerely
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2156-342X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1353
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	Author	Lobanov, Yury V.; Tong, Cheuk-yu E.; Hedden, Abigail S.; Blundell, Raymond; Gol’tsman, Gregory N.
	Title	Microwave-assisted measurement of the frequency response of terahertz HEB mixers with a Fourier transform spectrometer			Type	Conference Article
	Year	2010	Publication	Proc. 21^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 21^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	420-423
	Keywords
	Abstract	We describe a novel method of operation of the HEB direct detector for use with a Fourier Transform Spectrometer. Instead of elevating the bath temperature, we have measured the RF response of waveguide HEB mixers by applying microwave radiation to select appropriate bias conditions. In our experiment, a microwave signal is injected into the HEB mixer via its IF port. By choosing an appropriate injection level, the device can be operated close to the desired operating point. Furthermore, we have shown that both thermal biasing and microwave injection can reproduce the same spectral response of the HEB mixer. However, with the use of microwave injection, there is no need to wait for the mixer to reach thermal equilibrium, so characterisation can be done in less time. Also, the liquid helium consumption for our wet cryostat is also reduced. We have demonstrated that the signal- to-noise ratio of the FTS measurements can be improved with microwave injection.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
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	Notes				Approved	no
	Call Number				Serial	1394
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	Author	Goltsman, G. N.
	Title	Submillimeter superconducting receivers for astronomy, atmospheric studies and other applications			Type	Abstract
	Year	2006	Publication	31nd IRMW / 14th ICTE	Abbreviated Journal	31nd IRMW / 14th ICTE
	Volume		Issue		Pages	177
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics
	Notes				Approved	no
	Call Number				Serial	1443
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	Author	Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N.
	Title	Receiver measurements of pHEB beam lead mixers on 3-μm silicon			Type	Conference Article
	Year	2005	Publication	Proc. 30th IRMMW / 13th THz	Abbreviated Journal	Proc. 30th IRMMW / 13th THz
	Volume		Issue		Pages	271-272
	Keywords
	Abstract	We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics
	Notes				Approved	no
	Call Number				Serial	1460
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	Author	Semenov, Alexei; Hübers, Heinz.-Wilhelm; Richter, Heiko; Birk, Manfred; Krocka, Michael; Mair, Ulrich; Smirnov, Konstantin; Gol'tsman, Grigory; Voronov, Boris
	Title	Performance of terahertz heterodyne receiver with a superconducting hot-electron mixer			Type	Conference Article
	Year	2002	Publication	Proc. 13^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 13^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	229-234
	Keywords
	Abstract	During the past decade major advances have been made regarding low noise mixers for terahertz heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a microwatt power from the local oscillator (L0). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, is of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated its performance. This yields important information for future development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA) [1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR.
	Address
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	Language		Summary Language		Original Title
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	Notes				Approved	no
	Call Number				Serial	1529
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.
	Title	Hot-electron superconducting mixers			Type	Conference Article
	Year	1993	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	2104	Issue		Pages	329-330
	Keywords
	Abstract	The creation of low noise heterodyne receivers for frequencies above 1 THz is in the urgentneed for radio astronomy, laser spectroscopy, plasma diagnostic, etc. In this paper we discussthe nonlinear effect related to hot electrons in superconductors, and their potential use in lownoise submilimeter wave mixer. We also discuss results achieved so far as well as possible futuredevelopments.
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	Corporate Author				Thesis
	Publisher	SPIE	Place of Publication		Editor	Birch, J.R.; Parker, T.J.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	18th International Conference on Infrared and Millimeter Waves
	Notes				Approved	no
	Call Number				Serial	1654
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.
	Title	Effect of electromagnetic radiation on a superconductor in a magnetic field			Type	Conference Article
	Year	1988	Publication	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya	Abbreviated Journal	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
	Volume	52	Issue	3	Pages	449-451
	Keywords
	Abstract	The effect of electromagnetic radiation on thin superconducting films of Nb with a large number of static defects is investigated experimentally for the case where the film is in the resistive state due to an applied magnetic field and transport current. The results obtained are found to be well described by a model of spatially homogeneous electron heating. It is noted that the results obtained here for Nb films are also valid for Al, NbN, and MoRe films.
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	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0367-6765	ISBN		Medium
	Area		Expedition		Conference	4th Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Tallin, Estonian SSR, Apr. 1987
	Notes				Approved	no
	Call Number				Serial	1702
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	Author	Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Heating of quasiparticles in a superconducting film in the resistive state			Type	Journal Article
	Year	1981	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	34	Issue	5	Pages	268-271
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	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1716
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	Author	Goltsman, G.
	Title	Simple method for stabilizing power of submillimetric spectrometer			Type	Journal Article
	Year	1972	Publication	Pribory i Tekhnika Eksperimenta	Abbreviated Journal	Pribory i Tekhnika Eksperimenta
	Volume		Issue	1	Pages	136
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1738
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	Author	Goltsman, Gregory N.
	Title	Development and applications of terahertz hot electron bolometers			Type	Abstract
	Year	2021	Publication	1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments	Abbreviated Journal	1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments
	Volume		Issue		Pages
	Keywords
	Abstract	The development of techniques and technologies for the deposition of ultrathin superconducting films, the creation of superconducting structures on a nanometer scale is the basis of significant progress in the field of superconducting receiving systems. Ultrathin NbN films are the basis for a wide range of record-breaking hot electron devices: direct and heterodyne terahertz detectors. Terahertz receivers are especially in demand in high-resolution spectroscopy for astronomical, atmospheric, and medical research. HEB receivers are widely used in terahertz radio astronomy. For example, the Dutch SRON Institute is preparing a project for the GUSTO hot air balloon telescope with a HEB mixer array at 1.4 THz and 1.9 THz. A 5-meter Chinese terahertz telescope DATE5 with HEB mixers at 1.4 THz is installed at the South Pole. The Stratospheric Observatory (SOFIA) uses HEB mixer matrices in the GREAT instrument operating in the 1.2 – 4.7 THz range. It is planned to implement the international project Origins Space Telescope (OST) in the far infrared region based on HEB receivers. The Japanese project Smiles-2 will allow measurements at 1.8 THz in the upper layers of the stratosphere and mesosphere. The development of the Millimetron space observatory continues in Russia.
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	Language		Summary Language		Original Title
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	Area		Expedition		Conference	First Moscow International Conference on Submillimeter and Millimeter Astronomy: Objectives and Instruments, Astro Space Center, Moscow, 12-16 April 2021, id. 2
	Notes	Downloaded from https://millimetron.ru/conference_2021/Goltsman.pdf; Author: Sergey; Last modification: 2021-04-14			Approved	no
	Call Number				Serial	1771
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	Author	Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory
	Title	Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds			Type	Conference Article
	Year	2020	Publication	Proc. 32-nd EMSS	Abbreviated Journal	Proc. 32-nd EMSS
	Volume		Issue		Pages	344-348
	Keywords
	Abstract	The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength.
	Address	NV-centers, nanodiamonds
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2724-0029	ISBN	978-88-85741-44-7	Medium
	Area		Expedition		Conference	32nd European Modeling & Simulation Symposium
	Notes				Approved	no
	Call Number				Serial	1840
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	Author	Гольцман, Григорий Наумович; Корнеев, Александр Александрович; Антипов, Андрей Владимирович; Минаева, Ольга Вячеславовна; Дивочий, Александр Валерьевич; Антипов, Сергей Владимирович; Вахтомин, Юрий Борисович; Смирнов, Константин Владимирович
	Title	Способ фильтрации фонового излучения инфракрасного диапазона			Type	Patent
	Year	2014	Publication		Abbreviated Journal
	Volume		Issue	RU 2510056 C1	Pages
	Keywords
	Abstract	Изобретение относится к способам уменьшения интенсивности фонового излучения инфракрасного диапазона. Способ фильтрации фонового излучения инфракрасного диапазона, падающего на сверхпроводниковый однофотонный детектор, включает передачу излучения инфракрасного диапазона с длиной волны 0,4-1,8 микрометров на сверхпроводниковый однофотонный детектор при помощи одномодового волокна, частично находящегося при температуре 4,0-4,4 К. При этом длина охлаждаемого участка одномодового волокна составляет 0,2-3,5 м. Технический результат заключается в повышении надежности работы фотонных детекторов. 2 з.п. ф-лы.
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	Notes				Approved	no
	Call Number				Serial	1815
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	Author	Антипов, Андрей Владимирович; Дивочий, Александр Валерьевич; Вахтомин, Юрий Борисович; Финкель, Матвей Ильич; Смирнов, Константин Владимирович
	Title	Способ прецизионного позиционирования чувствительного элемента фотонного детектора			Type	Patent
	Year	2014	Publication		Abbreviated Journal
	Volume		Issue	RU 2506664 C1	Pages
	Keywords
	Abstract	Изобретение относится к способам, позволяющим производить совмещение фотонных детекторов относительно оптического излучения. Способ прецизионного позиционирования чувствительного элемента фотонного детектора относительно амплитудно-модулированного оптического излучения включает смещение чувствительного элемента фотонного детектора постоянным током с последующей регистрацией электрического сигнала, возникающего на контактах детектора на частоте модуляции излучения. Полученный при этом сигнал используют как параметр, определяющий качество позиционирования. Обеспечивается повышение технико-эксплуатационных характеристик детектора.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
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	Notes				Approved	no
	Call Number				Serial	1816
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	Author	Гольцман, Г. Н.; Веревкин, А. А.; Гершензон, Е. М.; Птицина, Н. Г.; Смирнов, К. В.; Чулкова, Г. М.
	Title	Исследования процессов неупругой релаксации и примесная спектроскопия-релаксометрия в двумерном электронном газе в полупроводниковых структурах с квантовыми ямами			Type	Report
	Year	1995	Publication		Abbreviated Journal
	Volume		Issue		Pages
	Keywords
	Abstract	В гетероструктурах GaAs/AlGaAs впервые прямым методом измерена температурная зависимость вpемени энеpгетической pелаксации двумерного электронного газа te(T) в широком диапазоне температур Т=1,5 – 50 К в квазиравновесных условиях. Для измерений использовался высокочувствительный спектрометр миллиметрового диапазона волн с высоким временным разрешением, который позволял измерять релаксационные времена до 150 пс с погрешностью не более 20%. Верхний предел температуры определялся временным разрешением спектрометра. Исследования проводились на высококачественных образцах с поверхностной концентрацией носителей ns = 4,2 1011 см-2 и подвижностью m = 7 105 см2В-1с-1 (при Т = 4,2К). В квазиравновесных условиях из температурной зависимости tе определен предел подвижности при низких температурах (T<4.2 K), связанный с рассеянием на пьезоакустическом потенциале, получено время неупругой релаксации, связанное с рассеянием на деформационном потенциале (15 K25 K), получено характерное время испускания оптического фонона (tLO>4,5пс), которое существенно превышает время сронтанного излучения оптического фонона (примерно в 30 раз), что связано с большой ролью процессов перепоглащения фононов электронами.При низких температурах проведены измерения tе в условиях сильного разогрева. Полученные значения tе и зависимость tе от температуры электронов Те совпадают с tе(Т) в квазиравновесных условиях при Т=Те. Из полученных значений tе(Те) построена зависимость мощности энергетических потерь от Те, которая хорошо согласуется с литературными данными.Начаты измерения в магнитном поле, которые показывают переспективность использованного нами метода измерений как в области слабых магнитных полей при факторе заполнения >10, так и в области сильных магнитных полей при факторе заполнения >1-2.
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	Corporate Author				Thesis
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	Notes	Отчет о НИР/НИОКР; РФФИ: 95-02-06409-а;			Approved	no
	Call Number				Serial	1831
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	Author	Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N.
	Title	A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure			Type	Journal Article
	Year	2005	Publication	Semicond.	Abbreviated Journal	Semicond.
	Volume	39	Issue	9	Pages	1082-1086
	Keywords	2D electron gas, AlGaAs/GaAs heterostructures, mixers
	Abstract	Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7826	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1463
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	Author	Смирнов, Константин Владимирович; Чулкова, Галина Меркурьевна; Вахтомин, Юрий Борисович; Корнеев, Александр Александрович; Окунев, Олег Валерьевич; Дивочий, Александр Валерьевич; Семенов, Александр Владимирович; Гольцман, Григорий Наумович
	Title	Особенности разогрева и релаксации горячих электронов О-754 в тонкопленочных cверхпроводниковых наноструктурах и 2D полупроводниковых гетероструктурах при поглощении излучения инфракрасного и терагерцового диапазонов			Type	Book Whole
	Year	2014	Publication		Abbreviated Journal
	Volume		Issue		Pages
	Keywords	2DEG
	Abstract	В монографии рассмотрены основные особенности эффекта электронного разогрева в тонких сверхпроводниковых пленках и полупроводниковых гетеропереходах, возникающего при поглощении носителями заряда излучений терагерцового и инфракрасного диапазонов. Значительная часть монографии посвящена представлению современных достижений при использовании указанного эффекта для создания приемных устройств с рекордными характеристиками: терагерцовых гетеродинных и болометрических приемников на основе сверхпроводниковых и полупроводниковых структур; сверхпроводниковых приемников одиночных ИК фотонов. В работе также подробно рассмотрены основы современной сверхпроводниковой тонкопленочной технологии. Монография может быть полезна студентам старших курсов, аспирантам и начинающим исследователям, работающим в области физики твердого тела, оптики, радиофизики.
	Address	Москва
	Corporate Author				Thesis
	Publisher	МПГУ	Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-4263-0145-0	Medium
	Area		Expedition		Conference
	Notes	240 страниц			Approved	no
	Call Number				Serial	1814
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	Author	Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И.
	Title	Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs			Type	Journal Article
	Year	2010	Publication	Изв. РАН Сер. Физ.	Abbreviated Journal	Изв. РАН Сер. Физ.
	Volume	74	Issue	1	Pages	110-112
	Keywords	2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth
	Abstract	Методом субмиллиметровой спектроскопии с высоким временным разрешением при Т = 4.2 К измерена концентрационная зависимость полосы преобразования гетеродинного детектирования гетероструктур AlGaAs/GaAs с двумерным электронным газом. С увеличением концентрации двумерных электронов ns = (1.6–6.6) Â· 1011см-2 ширина полосы преобразования f3dB уменьшается от 245 до 145 МГц. В исследованной области концентраций наблюдается зависимость f3dB , обусловленная рассеянием электронов на деформационном потенциале акустических фононов и пьезоэлектрическим рассеянием.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1217			Approved	no
	Call Number	RPLAB @ gujma @			Serial	642
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	Author	Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
	Title	Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures			Type	Journal Article
	Year	2010	Publication	Bull. Russ. Acad. Sci. Phys.	Abbreviated Journal	Bull. Russ. Acad. Sci. Phys.
	Volume	74	Issue	1	Pages	100-102
	Keywords	2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth
	Abstract	The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1062-8738	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1217
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	Author	Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R.
	Title	Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions			Type	Conference Article
	Year	2002	Publication	Mater. Sci. Forum	Abbreviated Journal	Mater. Sci. Forum
	Volume	384-3	Issue		Pages	107-116
	Keywords	2DEG, AlGaAs/GaAs
	Abstract	A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Materials Science Forum
	Notes				Approved	no
	Call Number				Serial	1536
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	Author	Gol’tsman, G. N.; Smirnov, K. V.
	Title	Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures			Type	Journal Article
	Year	2001	Publication	Jetp Lett.	Abbreviated Journal	Jetp Lett.
	Volume	74	Issue	9	Pages	474-479
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes	По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах			Approved	no
	Call Number				Serial	1541
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S.
	Title	Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts			Type	Journal Article
	Year	1999	Publication	Semicond.	Abbreviated Journal	Semicond.
	Volume	33	Issue	5	Pages	551-554
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7826	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1571
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S.
	Title	Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range			Type	Conference Article
	Year	1997	Publication	Proc. 4-th Int. Semicond. Device Research Symp.	Abbreviated Journal	Proc. 4-th Int. Semicond. Device Research Symp.
	Volume		Issue		Pages	55-58
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1602
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S.
	Title	Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K			Type	Journal Article
	Year	1996	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	64	Issue	5	Pages	404-409
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes	http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”)			Approved	no
	Call Number				Serial	1608
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
	Title	Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions			Type	Journal Article
	Year	1996	Publication	Surface Science	Abbreviated Journal	Surface Science
	Volume	361-362	Issue		Pages	569-573
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0039-6028	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1609
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
	Title	Determination of the limiting mobility of a two-dimensional electron gas in Al_xGa_1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time			Type	Journal Article
	Year	1996	Publication	Phys. Rev. B Condens. Matter.	Abbreviated Journal	Phys. Rev. B Condens. Matter.
	Volume	53	Issue	12	Pages	R7592-R7595
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:9982274			Approved	no
	Call Number				Serial	1612
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	Author	Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
	Title	Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures			Type	Journal Article
	Year	1995	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	61	Issue	7	Pages	591-595
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grﬁneisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a signiﬁcant discrepancy between the experimental and theoretical re-sults.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1624
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	Author	Гольцман, Г. Н.; Смирнов, К. В.
	Title	По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах			Type	Journal Article
	Year	2001	Publication	Письма в ЖЭТФ	Abbreviated Journal	Письма в ЖЭТФ
	Volume	74	Issue	9	Pages	532-538
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	Рассмотрены теоретические и экспериментальные работы, посвященные изучению электрон-фононного взаимодействия в двумерном электронном газе полупроводниковых гетероструктур при низких температурах в случае сильного разогрева в электрическом поле, в квазиравновесных условиях и в квантующем магнитном поле, перпендикулярном 2D слою.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1541: “Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures”			Approved	no
	Call Number				Serial	1832
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	Author	Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И.
	Title	Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов			Type	Journal Article
	Year	2010	Publication	Физика и техника полупроводников	Abbreviated Journal
	Volume	44	Issue	11	Pages	1475-1478
	Keywords	2DEG, AlGaAs/GaAs heterostructures mixers
	Abstract	Методом субмиллиметровой спектроскопии с высоким временным разрешением измерены температурная и концентрационная зависимости полосы преобразования смесителей терагерцового диапазона AlGaAs/GaAs на разогреве двумерных электронов с фононным каналом их охлаждения. Полоса преобразования на уровне 3 дБ (f3 dB) при 4.2 K при изменении концентрации ns варьируется в пределах 150-250 МГц в соответствии со степенным законом f3 dB propto ns-0.5, что соответствует доминирующему механизму рассеяния на пьезоэлектрических фононах. Минимальное значение коэффициента потерь преобразования полупроводникового смесителя достигается в структурах с высокой подвижностью носителей mu>3·105 см2/В·с при 4.2 K.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1216			Approved	no
	Call Number	RPLAB @ gujma @			Serial	702
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	Author	Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
	Title	Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons			Type	Journal Article
	Year	2010	Publication	Semicond.	Abbreviated Journal	Semicond.
	Volume	44	Issue	11	Pages	1427-1429
	Keywords	2DEG, AlGaAs/GaAs heterostructures mixers
	Abstract	The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7826	ISBN		Medium
	Area		Expedition		Conference
	Notes	Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов			Approved	no
	Call Number				Serial	1216
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	Author	Смирнов, К. В.
	Title	AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона			Type	Abstract
	Year	2003	Publication	Тезисы докладов VI Российской конференции по физике полупроводников	Abbreviated Journal
	Volume		Issue		Pages	181
	Keywords	2DEG, AlGaAs/GaAs heterostructures, mixer
	Abstract
	Address	ФТИ им. А. Ф. Иоффе, Санк-Петербург
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	VI Российской конференции по физике полупроводников (27-31 октября)
	Notes	Unconfirmed; Сама конференция, однако, была -- её упоминают: [http://www.nsc.ru/HBC/article.phtml?nid=271&id=17], [https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/lab-20/publikatsii/2003], [http://www.ioffe.ru/sem_tech/sem%5Fteh%5Fmovpe%5Fpublications%5Fru.htm#R2003], [https://istina.ips.ac.ru/collections/828771/]			Approved	no
	Call Number				Serial	1837
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	Author	Смирнов, Константин Владимирович
	Title	Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе			Type	Manuscript
	Year	2000	Publication	М. МПГУ	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	2DEG, AlGaAs/GaAs heterostructures, NbN films
	Abstract	Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств.
	Address	Москва, МПГУ
	Corporate Author				Thesis	Ph.D. thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1830
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	Author	Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В.
	Title	Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе			Type	Book Whole
	Year	2012	Publication		Abbreviated Journal
	Volume		Issue		Pages
	Keywords	2DEG, AlGaAs/GaAs, NbN detectors
	Abstract	Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники.
	Address	Москва
	Corporate Author				Thesis
	Publisher	Прометей, МПГУ	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-4263-0118-4	Medium
	Area		Expedition		Conference
	Notes	УДК: 537.311			Approved	no
	Call Number				Serial	1818
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	Author	Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.
	Title	Energy relaxation of two-dimensional electrons in the quantum Hall effect regime			Type	Journal Article
	Year	2000	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	71	Issue	1	Pages	31-34
	Keywords	2DEG, GaAs/AlGaAs heterostructures
	Abstract	The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes	http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”)			Approved	no
	Call Number				Serial	1559
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	Author	Anosov, A. A.; Barabanenkov, Yu. N.; Kazanskii, A. S.; Less, Yu. A.; Sharakshane, A. S.
	Title	The inverse problem of acoustothermography with correlation reception of thermal acoustic radiation			Type	Journal Article
	Year	2009	Publication	Acoust. Phys.	Abbreviated Journal
	Volume	55	Issue	1	Pages	114-119
	Keywords	acoustic thermography, acoustothermography
	Abstract	For the one-dimensional inverse problem of acoustothermography with correlation reception of thermal acoustic radiation, an integral equation is presented and experimentally verified. A method of solving the inverse problem is proposed. The method is based on combining the correlation functions of thermal acoustic radiation that were obtained for different distances between the receivers.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1131
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	Author	Anosov, A. A.; Nemchenko, O. Yu.; Less, Yu. A.; Kazanskii, A. S.; Mansfel'd, A. D.
	Title	Possibilities of acoustic thermometry for controlling targeted drug delivery			Type	Journal Article
	Year	2015	Publication	Acoust. Phys.	Abbreviated Journal
	Volume	61	Issue	4	Pages	488-493
	Keywords	acoustic thermometry, liposome suspension, thermography
	Abstract	Model acoustic thermometry experiments were conducted during heating of an aqueous liposome suspension. Heating was done to achieve the liposome phase transition temperature. At the moment of the phase transition, the thermal acoustic signal achieved a maximum and decreased, despite continued heating. During subsequent cooling of the suspension, when lipids again passed through the phase transition point, the thermal acoustic signal again increased, despite a reduction in temperature. This effect is related to an increase in ultrasound absorption by the liposome suspension at the moment of the lipid phase transition. The result shows that acoustic thermography can be used to control targeted delivery of drugs mixed in thermally sensitive liposomes, the integrity of which is violated during heating to the phase transition temperature.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1130
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	Author	Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G.
	Title	Luminescence of colloidal Ag₂S/ZnS core/shell quantum dots capped with thioglycolic acid			Type	Journal Article
	Year	2020	Publication	J. Luminescence	Abbreviated Journal	J. Luminescence
	Volume	220	Issue		Pages	117008 (1 to 7)
	Keywords	Ag2S QD, quantum dots
	Abstract	The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-2313	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1267
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	Author	Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Room temperature silicon detector for IR range coated with Ag₂S quantum dots			Type	Conference Article
	Year	2019	Publication	IRMMW-THz	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	Ag2S quantum dots
	Abstract	A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2162-2035	ISBN	978-1-5386-8285-2	Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	8874267			Serial	1286
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	Author	Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V.
	Title	Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films			Type	Conference Article
	Year	1996	Publication	Czech J. Phys.	Abbreviated Journal	Czech J. Phys.
	Volume	46	Issue	S5	Pages	2489-2490
	Keywords	Al, Be, Nb films
	Abstract	The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0011-4626	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1767
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	Author	Maslennikov, S. N.; Morozov, D. V.; Ozhegov, R. V.; Smirnov, K. V.; Okunev, O. V.; Gol’tsman, G. N.
	Title	Imaging system for submillimeter wave range based on AlGaAs/GaAs hot electron bolometer mixers			Type	Conference Article
	Year	2004	Publication	Proc. 5-th MSMW	Abbreviated Journal	Proc. 5-th MSMW
	Volume	2	Issue		Pages	558-560
	Keywords	AlGaAs/GaAs HEB mixers
	Abstract	Electromagnetic radiation of the submillimeter (SMM) range is dispersed and absorbed significantly less than infrared (IR) radiation when passing through different objects. That is the reason for the development of an SMM imaging system. In this paper, we discuss the design of an SMM heterodyne imager, based on a matrix of AlGaAs/GaAs heterostructure hot electron bolometer mixers (HEB) with relatively high (about 77 K) operating temperature. The predicted double side band (DSB) noise temperature is about 1000 K and optimal local oscillator (LO) power is about 1 /spl mu/W for such mixers, which seems to be quite prospective for an SMM heterodyne imager.
	Address	Kharkov, Ukraine
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828)
	Notes				Approved	no
	Call Number				Serial	1487
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	Author	Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P.
	Title	Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements			Type	Journal Article
	Year	2011	Publication	Semicond. Sci. Technol.	Abbreviated Journal	Semicond. Sci. Technol.
	Volume	26	Issue	2	Pages	025013
	Keywords	AlGaAs/GaAs heterojunctions
	Abstract	We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0268-1242	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1215
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	Author	Schwaab, G. W.; Hübers, H.-W.; Schubert, J.; Erichsen, Patrik; Gol'tsman, G.; Semenov, A.; Verevkin, A.; Cherednichenko, S.; Gershenzon, E.
	Title	A high resolution spectrometer for the investigation of molecular structures in the THZ range			Type	Conference Article
	Year	1999	Publication	Proc. 10^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 10^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	530-538
	Keywords	antireflection coatings, dielectric mirrors
	Abstract	A status report on the design study of a novel tunable far-infrared (TuFTR) spectrometer for the investigation of the structure of weakly bound molecular complexes is given. The goal is a sensitive TuFIR spectrometer with full frequency coverage from 1-6 THz. To hit the goal, advanced sources (e.g. p-Ge lasers) and detectors (e.g. superconducting hot electron bolometric (HEB) mixers) shall be employed to extend the technique of cavity ringdown spectroscopy, that is currently used at optical and infrared frequencies to the FIR spectral range. Critical for such a system are high-Q resonators that still allow good optical coupling, and wideband antireflection coatings to increase detector sensitivity and decrease optical path losses. 2 nd order effective media theory and an iterative multilayer algorithm have been employed to design wideband antireflection coatings for dielectrics with large dielectric constants like Ge or Si. Taking into account 6 layers, for Si bandwidths of 100% of the center frequency could be obtained with power reflectivities below 1% for both polarizations simultaneously. Wideband dielectric mirrors including absorption losses were also studied yielding a bandwidth of about 50% with reflectivities larger than 99.5%.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1577
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	Author	Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E.
	Title	Relaxation of the resistive superconducting state in boron-doped diamond films			Type	Journal Article
	Year	2016	Publication	Phys. Rev. B	Abbreviated Journal	Phys. Rev. B
	Volume	93	Issue	6	Pages	064506
	Keywords	boron-doped diamond films, resistive superconducting state, relaxation time
	Abstract	We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2469-9950	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1167
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	Author	Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G.
	Title	Optimization of contra-directional coupler based on silicon nitride Bragg rib waveguide			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051048
	Keywords	Bragg waveguide, Si3N4
	Abstract	We report on the development and fabrication of a contra-directional coupler based on the Bragg waveguide on Si3N4 platform. Transmitted and reflected by the contra-directional coupler spectra were measured. The reflected spectra exactly matches the one notched by the main channel of the coupler. Losses are about 3dB, coupling to the directing branch of the coupler is practically lossless. FWHM of the transmitted (reflected) spectra is 3.46 nm.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1195
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	Author	Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Goltsman, G.
	Title	Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform			Type	Conference Article
	Year	2017	Publication	Proc. SPBOPEN	Abbreviated Journal	Proc. SPBOPEN
	Volume		Issue		Pages	449-450
	Keywords	Bragg waveguides
	Abstract	We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. Transmission spectra of the integrated notch filter has been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed.
	Address	St. Petersburg, Russia
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1141			Approved	no
	Call Number				Serial	1257
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	Author	Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G.
	Title	CMOS compatible nanoantenna-nanodiamond integration			Type	Conference Article
	Year	2019	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1410	Issue		Pages	012180
	Keywords	bull-eye antenna, hyperbolic metamaterials, NV-centers
	Abstract	Here we demonstrate CMOS compatible method to deterministically produce nanoantenna with nanodiamonds systems on example of bull-eye antenna on top of on hyperbolic metamaterials. We study the statistics of the placement of nanodiamonds and measure the fluorescence lifetime and the second-order correlation function of NV-centers inside nanodiamonds.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1182
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	Author	Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Кагане, М. Л.; Мултановский, В. В.; Птицина, Н. Г.
	Title	Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках			Type	Journal Article
	Year	1983	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	17	Issue	8	Pages	1430-1437
	Keywords	BWO spectroscopy, pure semiconductors, residual impurities
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1714			Approved	no
	Call Number				Serial	1712
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	Author	Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors			Type	Journal Article
	Year	1983	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
	Volume	17	Issue	8	Pages	908-913
	Keywords	BWO spectroscopy, pure semiconductors, residual impurities
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках			Approved	no
	Call Number				Serial	1714
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.
	Title	Submillimeter backward wave tube spectrometer for measuring superconducting film transmission			Type	Journal Article
	Year	1983	Publication	Pribory i Tekhnika Eksperimenta	Abbreviated Journal	Pribory i Tekhnika Eksperimenta
	Volume	26	Issue	5	Pages	134-137
	Keywords	BWO spectroscopy, spectrometer, transmission
	Abstract	A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0032-8162	ISBN		Medium
	Area		Expedition		Conference
	Notes	Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок			Approved	no
	Call Number				Serial	1713
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	Author	Aksaev, E. E.; Gershenzon, E.M.; Gol'tsman, G. N.; Mirskij, G. I.; Semenov, A. D.
	Title	Submillimetric spectrometer-relaxometer based on backward-wave tubes with picosecond time resolution			Type	Journal Article
	Year	1991	Publication	Pribory i Tekhnika Eksperimenta	Abbreviated Journal	Pribory i Tekhnika Eksperimenta
	Volume	34	Issue	2	Pages	125-131
	Keywords	BWO, applications
	Abstract	The high-sensitive automatic spectrometer-relaxometer based on backward-wave tubes in the range of 4÷0.25 mm was described permitting to study the response kinetics of sample under investigation in any point of this range with the resolution time of 10-11 s. The relaxation measurements were conducted using oscillation beats of two adequate tubes, the frequency of one of them was fixed, while that of the other one was changeable. The amplitude-frequency characteristic of the response under the conditions of synchronous reception was recorded at beat frequency variation from 107 to 1010 Hz. The high sensitivity was reached by decreasing the device recording band down to 100 Hz in the whole measuring range.
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Series Volume		Series Issue		Edition
	ISSN	0032-8162	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1683
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I.
	Title	Submillimeter backward-wave-tube spectrometer-relaxometer			Type	Journal Article
	Year	1987	Publication	Pribory i Tekhnika Eksperimenta	Abbreviated Journal	Pribory i Tekhnika Eksperimenta
	Volume	30	Issue	4	Pages	131-137
	Keywords	BWO, applications
	Abstract	A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops.
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	Language	Russian	Summary Language		Original Title
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	Series Volume		Series Issue		Edition
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	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1699
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	Author	Iomdina, E. N.; Seliverstov, S.; Sianosyan, A.; Teplyakova, K.; Rusova, A.; Goltsman, G.
	Title	The prospects of using the radiation for the assessment of corneal and scleral hydration			Type	Abstract
	Year	2016	Publication	Acta Ophthalmol.	Abbreviated Journal	Acta Ophthalmol.
	Volume	94	Issue		Pages
	Keywords	BWO, avalanche transit‐time diode, medicine, biology
	Abstract	Purpose An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells – the cornea and the sclera. THz systems creating images in reflected beams are likely to become ideal instruments of noninvasive testing of corneal and scleral hydration degree as THz radiation is highly sensitive to water content. The paper aims at studying the transmittance and reflectance spectra of the cornea and the sclera of rabbit and human eyes, as well as those of the whole rabbit eye, in the frequency range of 0.13–0.32 THz. Methods The experiments were carried out on 3 corneas and 3 rabbit scleras, 2 whole rabbit eyes, and 3 human healthy adult scleras using a specially developed THz system based on reliable and easy‐to‐use continuous wave sources: a backward‐wave oscillator and an avalanche transit‐time diode. Results The transmittance spectra of the cornea and the sclera and the dependence of the reflection coefficient of these tissues in THz range on water percentage content were determined. Comparison of the rabbit cornea hydrated from 73.2% to 76.3% concentration by mass demonstrated an approximately linear relationship between THz reflectivity and water concentration. The decrease of free water concentration by 1% leads to a drop of the reflectance coefficient by 13%. The parameters studied displayed noticeable differences between the sclera and the cornea of rabbits and between rabbit sclera and human sclera. Conclusions Preliminary results demonstrate that the proposed technique, based on continuous THz radiation, may be used to create a device for noninvasive testing of corneal and scleral hydration, which has good potential of wide‐scale practical application. The work was supported by the Russian Foundation of Basic Research (grant No.15‐29‐03843)
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	Series Volume		Series Issue		Edition
	ISSN	1755375X	ISBN		Medium
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	Notes				Approved	no
	Call Number				Serial	1333
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	Author	Gol’tsman, G. N.
	Title	Terahertz technology in Russia			Type	Conference Article
	Year	1994	Publication	24th European Microwave Conf.	Abbreviated Journal	24th European Microwave Conf.
	Volume	1	Issue		Pages	113-121
	Keywords	BWO, HEB mixers
	Abstract	The presentation consider the parameters and operating peculiarities of unique microwave generators of the terahertz range which have been created in Russia – the backward wave oscillators – as well as certain devices based on these generators, such as high resolution. spectrometers and time-resolving spectrometers with picosecond temporal resolution. Most resent BWO-based studies are illustrated by a project devoted to superconductive hot-electron. bolometers which are of great independent value for the terahertz technology as high-sensitive picosecond detectors and low noise broad-band mixers.
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	Language		Summary Language		Original Title
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	Area		Expedition		Conference	24th European Microwave Conference
	Notes				Approved	no
	Call Number				Serial	1635
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	Author	Iomdina, E. N.; Goltsman, G. N.; Seliverstov, S. V.; Sianosyan, A. A.; Teplyakova, K. O.; Rusova, A. A.
	Title	Study of transmittance and reflectance spectra of the cornea and the sclera in the THz frequency range			Type	Journal Article
	Year	2016	Publication	J. Biomed. Opt.	Abbreviated Journal	J. Biomed. Opt.
	Volume	21	Issue	9	Pages	97002 (1 to 5)
	Keywords	BWO, IMPATT diode, Schottky diode, medicine, animals, cornea, physiology, humans, rabbits, sclera diagnostic imaging, physiology
	Abstract	An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells: the cornea and the sclera. Adequate control of corneal and scleral hydration is very important for early diagnosis of a variety of eye diseases, stating indications for and contraindications against keratorefractive surgeries and the choice of contact lens correction solutions. THz systems of creating images in reflected beams are likely to become ideal instruments of noninvasive control of corneal and scleral hydration degrees. This paper reports on the results of a study involving transmittance and reflectance spectra for the cornea and the sclera of rabbit and human eyes, as well as those of the rabbit eye, in the frequency range of 0.13 to 0.32 THz. The dependence of the reflectance coefficient of these tissues on water mass percentage content was determined. The experiments were performed on three corneas, three rabbit scleras, two rabbit eyes, and three human scleras. The preliminary results demonstrate that the proposed technique, based on the use of a continuous THz radiation, may be utilized to create a device for noninvasive control of corneal and scleral hydration, which has clear potential of broad practical application.
	Address	Moscow State Pedagogical University, Department of Physics, 29 Malaya Pirogovskaya Street, Moscow 119435, Russia
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1083-3668	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:27626901			Approved	no
	Call Number				Serial	1335
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	Author	Iomdina, E. N.; Seliverstov, S. V.; Sianosyan, A. A.; Teplyakova, K. O.; Rusova, A. A.; Goltsman, G. N.
	Title	Terahertz scanning for evaluation of corneal and scleral hydration			Type	Journal Article
	Year	2018	Publication	Sovremennye tehnologii v medicine	Abbreviated Journal	STM
	Volume	10	Issue	4	Pages	143-149
	Keywords	BWO; Golay cell; medicine; cornea; sclera; THz radiation; corneal hydration; backward-wave oscillator; avalanche transit-time diode; IMPATT diode
	Abstract	The aim of the investigation was to study the prospects of using continuous THz scanning of the cornea and the sclera to determine water concentration in these tissues and on the basis of the obtained data to develop the experimental installation for monitoring corneal and scleral hydration degree.Materials and Methods. To evaluate corneal and scleral transmittance and reflectance spectra in the THz range, the developed experimental installations were used to study 3 rabbit corneas and 3 scleras, 2 whole rabbit eyes, and 3 human scleras. Besides, two rabbit eyes were studied in vivo prior to keratorefractive surgery as well as 10 and 21 days following the surgery (LASIK).Results. There have been created novel experimental installations enabling in vitro evaluation of frequency dependence of corneal and scleral transmittance coefficients and reflectance coefficients on water percentage in the THz range. Decrease in corneal water content by 1% was found to lead to reliably established decrease in the reflected signal by 13%. The reflectance spectrum of the whole rabbit eye was measured in the range of 0.13–0.32 THz. The study revealed the differences between the indices of rabbit cornea and sclera, as well as rabbit and human sclera. There was developed a laboratory model of the installation for in vivo evaluation of corneal and scleral hydration using THz radiation.Conclusion. The preliminary findings show that the proposed technique based on the use of continuous THz radiation can be employed to create a device for noninvasive control of corneal and scleral hydration.
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	Language		Summary Language		Original Title
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	Notes				Approved	no
	Call Number				Serial	1315
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	Author	Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G.
	Title	Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors			Type	Journal Article
	Year	2018	Publication	Phys. Status Solidi B	Abbreviated Journal	Phys. Status Solidi B
	Volume	255	Issue	1	Pages	1700227 (1 to 6)
	Keywords	carbon nanotube schottky diodes, CNT
	Abstract	Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz.
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	Corporate Author				Thesis
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	Series Volume		Series Issue		Edition
	ISSN	0370-1972	ISBN		Medium
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	Notes				Approved	no
	Call Number				Serial	1321
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	Author	Khasminskaya, S.; Pyatkov, F.; Słowik, K.; Ferrari, S.; Kahl, O.; Kovalyuk, V.; Rath, P.; Vetter, A.; Hennrich, F.; Kappes, M. M.; Gol'tsman, G.; Korneev, A.; Rockstuhl, C.; Krupke, R.; Pernice, W. H. P.
	Title	Fully integrated quantum photonic circuit with an electrically driven light source			Type	Journal Article
	Year	2016	Publication	Nat. Photon.	Abbreviated Journal	Nat. Photon.
	Volume	10	Issue	11	Pages	727-732
	Keywords	Carbon nanotubes and fullerenes, Integrated optics, Single photons and quantum effects, Waveguide integrated single-photon detector
	Abstract	Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices.
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	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1105
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	Author	Pyatkov, Felix; Khasminskaya, Svetlana; Fütterling, Valentin; Fechner, Randy; Słowik, Karolina; Ferrari, Simone; Kahl1, Oliver; Kovalyuk, Vadim; Rath, Patrik; Vetter, Andreas; Flavel, Benjamin S.; Hennrich, Frank; Kappes, Manfred M.; Gol’tsman, Gregory N.; Korneev, Alexander; Rockstuhl, Carsten; Krupke, Ralph; Pernice, Wolfram H. P.
	Title	Carbon nanotubes as exceptional electrically driven on-chip light sources			Type	Miscellaneous
	Year	2016	Publication	2Physics	Abbreviated Journal	2Physics
	Volume		Issue		Pages
	Keywords	carbon nanotubes, CNT
	Abstract	Carbon nanotubes (CNTs) belong to the most exciting objects of the nanoworld. Typically, around 1 nm in diameter and several microns long, these cylindrically shaped carbon-based structures exhibit a number of exceptional mechanical, electrical and optical characteristics [1]. In particular, they are promising ultra-small light sources for the next generation of optoelectronic devices, where electrical components are interconnected with photonic circuits. Few years ago, we demonstrated that electically driven CNTs can serve as waveguide-integrated light sources [2]. Progress in the field of nanotube sorting, dielectrophoretical site-selective deposition and efficient light coupling into underlying substrate has made CNTs suitable for wafer-scale fabrication of active hybrid nanophotonic devices [2,3]. Recently we presented a nanotube-based waveguide integrated light emitters with tailored, exceptionally narrow emission-linewidths and short response times [4]. This allows conversion of electrical signals into well-defined optical signals directly within an optical waveguide, as required for future on-chip optical communication. Schematics and realization of this device is shown in Figure 1. The devices were manufactured by etching a photonic crystal waveguide into a dielectric layer following electron beam lithography. Photonic crystals are nanostructures that are also used by butterflies to give the impression of color on their wings. The same principle has been used in this study to select the color of light emitted by the CNT. The precise dimensions of the structure were numerically simulated to tailor the properties of the final device. Metallic contacts in the vicinity to the waveguide were fabricated to provide electrical access to CNT emitters. Finally, CNTs, sorted by structural and electronic properties, were deposited from a solution across the waveguide using dielectrophoresis, which is an electric-field-assisted deposition technique.
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	Series Volume		Series Issue		Edition
	ISSN	2372-1782	ISBN		Medium
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	Notes				Approved	no
	Call Number				Serial	1219
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