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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D. | ||||
| Title | Submillimeter backward wave tube spectrometer for measuring superconducting film transmission | Type | Journal Article | ||
| Year | 1983 | Publication | Pribory i Tekhnika Eksperimenta | Abbreviated Journal | Pribory i Tekhnika Eksperimenta |
| Volume | 26 | Issue | 5 | Pages | 134-137 |
| Keywords | BWO spectroscopy, spectrometer, transmission | ||||
| Abstract | A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| ISSN | 0032-8162 | ISBN | Medium | ||
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| Notes | Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок | Approved | no | ||
| Call Number | Serial | 1713 | |||
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| Author | Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
| Title | Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors | Type | Journal Article | ||
| Year | 1983 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
| Volume | 17 | Issue | 8 | Pages | 908-913 |
| Keywords | BWO spectroscopy, pure semiconductors, residual impurities | ||||
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| Notes | Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках | Approved | no | ||
| Call Number | Serial | 1714 | |||
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| Author | Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
| Title | Kinetics of submillimeter impurity and exciton photoconduction in Ge | Type | Journal Article | ||
| Year | 1982 | Publication | Optics and Spectroscopy | Abbreviated Journal | Optics and Spectroscopy |
| Volume | 52 | Issue | 4 | Pages | 454-455 |
| Keywords | Ge, exciton photoconduction | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1715 | |||
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| Author | Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Heating of quasiparticles in a superconducting film in the resistive state | Type | Journal Article | ||
| Year | 1981 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 34 | Issue | 5 | Pages | 268-271 |
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| Notes | Approved | no | |||
| Call Number | Serial | 1716 | |||
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| Author | Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state | Type | Journal Article | ||
| Year | 1982 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 36 | Issue | 7 | Pages | 296-299 |
| Keywords | HEB | ||||
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| Notes | Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии | Approved | no | ||
| Call Number | Serial | 1717 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
| Title | Cross section for binding of free carriers into excitons in germanium | Type | Journal Article | ||
| Year | 1981 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 33 | Issue | 11 | Pages | 574 |
| Keywords | Ge, excitons, photoconductivity | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1718 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Population and lifetime of excited states of shallow impurities in Ge | Type | Journal Article | ||
| Year | 1979 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 49 | Issue | 2 | Pages | 355-362 |
| Keywords | Ge, photothermal ionization, shallow impurities | ||||
| Abstract | An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1719 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. | ||||
| Title | Capture of photoexcited carriers by shallow impurity centers in germanium | Type | Journal Article | ||
| Year | 1979 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 50 | Issue | 4 | Pages | 728-734 |
| Keywords | Ge, photoexcited carriers, shallow impurity centers | ||||
| Abstract | Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1720 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. | ||||
| Title | Observation of free carrier resonances in p-type germanium at submillimeter wavelengths | Type | Journal Article | ||
| Year | 1978 | Publication | Sov. Phys. Solid State | Abbreviated Journal | Sov. Phys. Solid State |
| Volume | 20 | Issue | 4 | Pages | 573-579 |
| Keywords | p-Ge, free carriers, resonances | ||||
| Abstract | The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1721 | |||
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| Author | Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M. | ||||
| Title | Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it | Type | Conference Article | ||
| Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 42 | Issue | 6 | Pages | 1142-1148 |
| Keywords | energy spectrum, Ge, magnetic field | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1722 | |||
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| Author | Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. | ||||
| Title | Population of excited-states of small admixtures in germanium | Type | Conference Article | ||
| Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 42 | Issue | 6 | Pages | 1154-1159 |
| Keywords | Ge, excited states, admixtures | ||||
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| Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1723 | |||
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| Author | Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. | ||||
| Title | Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors | Type | Conference Article | ||
| Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 42 | Issue | 6 | Pages | 1231-1234 |
| Keywords | spectrum, semiconductors, admixtures, strong magnetic-field | ||||
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| Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | blagosklonskaya1978effect | Serial | 1724 | ||
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| Author | Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. | ||||
| Title | Effect of a strong magnetic field on the spectrum of donors in InSb | Type | Journal Article | ||
| Year | 1978 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
| Volume | 11 | Issue | 12 | Pages | 1395-1397 |
| Keywords | InSb, spectrum of donors, strong magnetic field | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1725 | |||
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| Author | Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. | ||||
| Title | Carrier lifetime in excited states of shallow impurities in germanium | Type | Journal Article | ||
| Year | 1977 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 25 | Issue | 12 | Pages | 539-543 |
| Keywords | Ge, shallow impurities, excited states | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1726 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. | ||||
| Title | Energy spectrum of acceptors in germanium and its response to a magnetic field | Type | Journal Article | ||
| Year | 1977 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 45 | Issue | 4 | Pages | 769-776 |
| Keywords | p-Ge, photoconductivity, energy spectrum, magnetic field | ||||
| Abstract | We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1727 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. | ||||
| Title | Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field | Type | Journal Article | ||
| Year | 1977 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 45 | Issue | 3 | Pages | 555-565 |
| Keywords | Ge, GaAs, magnetic field, donors, energy spectrum | ||||
| Abstract | The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1728 | |||
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| Author | Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. | ||||
| Title | Effect of a high magnetic field on the spectrum of donors in InSb | Type | Journal Article | ||
| Year | 1977 | Publication | Fizika i Tekhnika Poluprovodnikov | Abbreviated Journal | Fizika i Tekhnika Poluprovodnikov |
| Volume | 11 | Issue | 12 | Pages | 2373-2375 |
| Keywords | InSb, energy spectrum, donors, high magnetic field | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Воздействие сильного магнитного поля на спектр доноров в InSb | Approved | no | ||
| Call Number | Serial | 1729 | |||
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| Author | Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. | ||||
| Title | Intervalley cyclotron-impurity resonance of electrons in n-Ge | Type | Journal Article | ||
| Year | 1976 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 24 | Issue | 3 | Pages | 125-128 |
| Keywords | n-Ge, cyclotron-impurity resonance | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1730 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Investigation of free excitons in Ge and their condensation at submillimeter wavelengths | Type | Journal Article | ||
| Year | 1976 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 43 | Issue | 1 | Pages | 116-122 |
| Keywords | Ge, free excitons | ||||
| Abstract | Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1731 | |||
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| Author | Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. | ||||
| Title | Investigation of population and ionization of donor excited states in Ge | Type | Conference Article | ||
| Year | 1976 | Publication | Physics of Semiconductors | Abbreviated Journal | Physics of Semiconductors |
| Volume | Issue | Pages | 631-634 | ||
| Keywords | Ge, donor excited states | ||||
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| Address | Amsterdam | ||||
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| Publisher | North-Holland Publishing Co. | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1732 | |||
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| Author | Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. | ||||
| Title | Investigation of excited donor states in GaAs | Type | Journal Article | ||
| Year | 1974 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
| Volume | 7 | Issue | 10 | Pages | 1248-1250 |
| Keywords | GaAs, excited donor states | ||||
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| Publisher | Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1733 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. | ||||
| Title | Energy spectrum of free excitons in germanium | Type | Journal Article | ||
| Year | 1973 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 18 | Issue | 3 | Pages | 93 |
| Keywords | Ge, free excitons, energy spectrum | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1734 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Submillimeter spectroscopy of semiconductors | Type | Journal Article | ||
| Year | 1973 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 37 | Issue | 2 | Pages | 299-304 |
| Keywords | semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons | ||||
| Abstract | The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1735 | |||
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| Author | Goltsman, G. | ||||
| Title | Simple method for stabilizing power of submillimetric spectrometer | Type | Journal Article | ||
| Year | 1972 | Publication | Pribory i Tekhnika Eksperimenta | Abbreviated Journal | Pribory i Tekhnika Eksperimenta |
| Volume | Issue | 1 | Pages | 136 | |
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| Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1738 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. | ||||
| Title | Binding energy of a carrier with a neutral impurity atom in germanium and in silicon | Type | Journal Article | ||
| Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 14 | Issue | 5 | Pages | 185-186 |
| Keywords | Ge, Si, neutral impurity atom, binding energy | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1739 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N. | ||||
| Title | Transitions of electrons between excited states of donors in germanium | Type | Journal Article | ||
| Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 14 | Issue | 2 | Pages | 63-65 |
| Keywords | Ge, donors, excited states | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1740 | |||
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| Author | Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. | ||||
| Title | Germanium hot-electron narrow-band detector | Type | Journal Article | ||
| Year | 1971 | Publication | Sov. Radio Engineering And Electronic Physics | Abbreviated Journal | Sov. Radio Engineering And Electronic Physics |
| Volume | 16 | Issue | 8 | Pages | 1346 |
| Keywords | Ge HEB detectors | ||||
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| Publisher | Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1741 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. | ||||
| Title | Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium | Type | Journal Article | ||
| Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 14 | Issue | 6 | Pages | 241 |
| Keywords | Ge, gamma irradiation, defects, impurities | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1742 | |||
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| Author | Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory | ||||
| Title | Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors | Type | Abstract | ||
| Year | 2020 | Publication | Graphene and 2dm Virt. Conf. | Abbreviated Journal | Graphene and 2DM Virt. Conf. |
| Volume | Issue | Pages | |||
| Keywords | single layer graphene, SLG, CVD, plasmons, FET | ||||
| Abstract | Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464. | ||||
| Address | Grenoble, France | ||||
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| Area | Expedition | Conference | Graphene and 2dm Virtual Conference & Expo | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1743 | |||
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| Author | Goltsman, Gregory | ||||
| Title | Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors | Type | Conference Article | ||
| Year | 2017 | Publication | 16th ISEC | Abbreviated Journal | 16th ISEC |
| Volume | Issue | Pages | Th-I-QTE-03 (1 to 3) | ||
| Keywords | waveguide SSPD, SNSPD | ||||
| Abstract | We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chipquantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. | ||||
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| Area | Expedition | Conference | IEEE/CSC & ESAS Superconductivity News Forum | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1745 | |||
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| Author | Gol’tsman, G.N. | ||||
| Title | Overview of recent results for superconducting NbN terahertz and optical detectors and mixers | Type | Miscellaneous | ||
| Year | 2014 | Publication | SM2 – Seminar on Terahertz Photonics | Abbreviated Journal | |
| Volume | Issue | Pages | 0562 | ||
| Keywords | NbN SSPD, SNSPD, HEB | ||||
| Abstract | We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1746 | |||
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| Author | Pentin, Ivan; Finkel, Matvey; Maslennikov, Sergey; Vakhtomin, Yuri; Smirnov, Konstantin; Kaurova, Nataliya; Goltsman, Gregory | ||||
| Title | Superconducting hot-electron-bolometer mixers for the mid-IR | Type | Journal Article | ||
| Year | 2017 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
| Volume | Issue | 10 | Pages | ||
| Keywords | IR NbN HEB mixers | ||||
| Abstract | The work presents the result of development of the NbN superconducting hot-electron-bolometer (HEB) mixer. The sensitive element of the mixer is directly coupled to mid-IR radiation, and doesn’t have planar metallic antenna. Investigations of noise characteristics of NbN HEB mixer were performed at the frequency 28.4 THz (λ = 10.6 µm) by using gas-discharge CW CO2-laser without consideration of optical and electrical losses in the heterodyne receiver. The noise temperature of NbN HEB mixer with the size of the sensitive element 10 µm × 10 µm was 2320 K (~ 1.5hν/kB) at the heterodyne frequency of 28.4 THz. The noise temperature was determined by measuring the Y-factor taking into account the term which describes fluctuations of zero-point oscillations in accordance with the fluctuation-dissipation theorem of Calle-Welton. Isothermal method was used to estimate the absorbed heterodyne radiation power which was 9 µW at the optimal operating point for the minimum noise temperature of NbN HEB mixer. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1684-1719 | ISBN | Medium | ||
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| Notes | http://jre.cplire.ru/jre/oct17/9/abstract.html (Russian) Гетеродинный приемник со сверхпроводниковым смесителем на эффекте электронного разогрева для среднего инфракрасного диапазона | Approved | no | ||
| Call Number | Serial | 1747 | |||
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| Author | Averkin, A. S.; Shishkin, A. G.; Chichkov, V. I.; Voronov, B. M.; Goltsman, G. N.; Karpov, A.; Ustinov, A. V. | ||||
| Title | Tunable frequency-selective surface based on superconducting split-ring resonators | Type | Conference Article | ||
| Year | 2014 | Publication | 8th Metamaterials | Abbreviated Journal | 8th Metamaterials |
| Volume | Issue | Pages | |||
| Keywords | superconducting split-ring resonators | ||||
| Abstract | We study a possibility to use the 2D superconducting metamaterial as a tunable frequency-selective surface (FSS). The proposed FSS is made of sub-wavelength size (l/14) metamaterial unit cells, where a split-ring resonator is embedded in a small iris aperture in a metal plane. The split-ring resonator is made of NbN film, and its resonance frequency is tuned by the temperature of the sample, changing the kinetic inductance of NbN film. The Ansoft HFSS simulation predicts the FSS tuning range of about 10-20 %. The developed superconducting FSS may be used as a tunable band-pass filter or modulator. | ||||
| Address | Copenhagen, Denmark | ||||
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| Area | Expedition | Conference | 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics – Metamaterials | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1749 | |||
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| Author | Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, Roman; Korneev, A.; Kouminov, P.; Okunev, O.; Chulkova, G.; Gol'tsman, G. | ||||
| Title | Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range | Type | Miscellaneous | ||
| Year | 2004 | Publication | ResearchGate | Abbreviated Journal | ResearchGate |
| Volume | Issue | Pages | |||
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices. | ||||
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| Notes | Not attributed to any publisher! File name: PR9VervekinSfin_f.doc; Author: JAOLEARY; Last modification date: 2004-02-26 | Approved | no | ||
| Call Number | Serial | 1751 | |||
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| Author | Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. | ||||
| Title | Механизм преобразования частоты в n-InSb-смесителе | Type | Journal Article | ||
| Year | 1991 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 25 | Issue | 11 | Pages | 1986-1998 |
| Keywords | n-InSb mixer | ||||
| Abstract | Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1753 | |||
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| Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.; Гусинский, Э. Н.; Литвак-Горская, Л. Б. | ||||
| Title | Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла | Type | Journal Article | ||
| Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 24 | Issue | 12 | Pages | 2145-2150 |
| Keywords | Hall constant, concentration of impurities, p-Si | ||||
| Abstract | На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1754 | |||
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| Author | Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. | ||||
| Title | Влияние магнитного поля на захват свободных носителей мелкими примесями в Ge | Type | Journal Article | ||
| Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 24 | Issue | 10 | Pages | 1881-1883 |
| Keywords | impurities, photoconductivity, Ge, capture of free carriers, magnetic field | ||||
| Abstract | Цель настоящей работы — измерение кинетики примесной фотопроводимости в квантующих магнитных полях. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1755 | |||
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| Author | Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б. | ||||
| Title | Кинетические явления в компенсированном n-InSb при низких температурах | Type | Journal Article | ||
| Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 24 | Issue | 1 | Pages | 3-24 |
| Keywords | compensated n-InSb, impurities | ||||
| Abstract | Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1756 | |||
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| Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. | ||||
| Title | Особенности температурной зависимости холловской подвижности в легированных и некомпенсированных полупроводниках | Type | Journal Article | ||
| Year | 1989 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 23 | Issue | 2 | Pages | 338-345 |
| Keywords | weakly compensated Si, Ge, doped, Hall mobility | ||||
| Abstract | На примере легированного и слабо компенсированного Si⟨B⟩ проведены исследования особенностей температурной зависимости подвижности при различных механизмах рассеяния. Уточнен метод определения концентрации компенсирующей примеси по μI(T). Полученные результаты обсуждаются и для Ge. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1758 | |||
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| Author | Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. | ||||
| Title | Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ | Type | Journal Article | ||
| Year | 1986 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 20 | Issue | 1 | Pages | 99-103 |
| Keywords | n-Ge, Hubbard upper zone conductivity, negative magnetoresistance | ||||
| Abstract | В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1759 | |||
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| Author | Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. | ||||
| Title | Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца | Type | Journal Article | ||
| Year | 1985 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 19 | Issue | 9 | Pages | 1696-1698 |
| Keywords | uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1760 | |||
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| Author | Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. | ||||
| Title | О механизме динамического сужения линии ЭПР доноров фосфора в кремнии | Type | Journal Article | ||
| Year | 1984 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 18 | Issue | 3 | Pages | 421-425 |
| Keywords | Si, phosphorus donors, EPR | ||||
| Abstract | Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1761 | |||
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| Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. | ||||
| Title | Об одном способе определения концентрации глубоких примесей в германии | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 10 | Pages | 1896-1898 |
| Keywords | Ge, deep impurities | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1762 | |||
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| Author | Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. | ||||
| Title | Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 10 | Pages | 1873-1876 |
| Keywords | compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1763 | |||
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| Author | Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. | ||||
| Title | О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 3 | Pages | 499-501 |
| Keywords | shallow neutral impurities, capture, inverse distribution function, Si | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1764 | |||
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| Author | Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
| Title | Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons | Type | Journal Article | ||
| Year | 1975 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 40 | Issue | 2 | Pages | 311-315 |
| Keywords | Ge, cyclotron resonance | ||||
| Abstract | Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1768 | |||
| Permanent link to this record | |||||
| Author | Goltsman, Gregory N. | ||||
| Title | Development and applications of terahertz hot electron bolometers | Type | Abstract | ||
| Year | 2021 | Publication | 1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments | Abbreviated Journal | 1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments |
| Volume | Issue | Pages | |||
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| Abstract | The development of techniques and technologies for the deposition of ultrathin superconducting films, the creation of superconducting structures on a nanometer scale is the basis of significant progress in the field of superconducting receiving systems. Ultrathin NbN films are the basis for a wide range of record-breaking hot electron devices: direct and heterodyne terahertz detectors. Terahertz receivers are especially in demand in high-resolution spectroscopy for astronomical, atmospheric, and medical research. HEB receivers are widely used in terahertz radio astronomy. For example, the Dutch SRON Institute is preparing a project for the GUSTO hot air balloon telescope with a HEB mixer array at 1.4 THz and 1.9 THz. A 5-meter Chinese terahertz telescope DATE5 with HEB mixers at 1.4 THz is installed at the South Pole. The Stratospheric Observatory (SOFIA) uses HEB mixer matrices in the GREAT instrument operating in the 1.2 – 4.7 THz range. It is planned to implement the international project Origins Space Telescope (OST) in the far infrared region based on HEB receivers. The Japanese project Smiles-2 will allow measurements at 1.8 THz in the upper layers of the stratosphere and mesosphere. The development of the Millimetron space observatory continues in Russia. | ||||
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| Area | Expedition | Conference | First Moscow International Conference on Submillimeter and Millimeter Astronomy: Objectives and Instruments, Astro Space Center, Moscow, 12-16 April 2021, id. 2 | ||
| Notes | Downloaded from https://millimetron.ru/conference_2021/Goltsman.pdf; Author: Sergey; Last modification: 2021-04-14 | Approved | no | ||
| Call Number | Serial | 1771 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
| Title | Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions | Type | Journal Article | ||
| Year | 1976 | Publication | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников | Abbreviated Journal | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
| Volume | 10 | Issue | Pages | 1379-1383 | |
| Keywords | Ge, cyclotron resonance, charged impurities, | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1772 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. | ||||
| Title | Absorption spectra in electron transitions between excited states of impurities in germanium | Type | Journal Article | ||
| Year | 1975 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 22 | Issue | 4 | Pages | 95-97 |
| Keywords | Ge, impurities, excited states, absorption spectra | ||||
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| Language | Summary Language | Original Title | |||
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| Notes | Approved | no | |||
| Call Number | Serial | 1773 | |||
| Permanent link to this record | |||||
| Author | Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
| Title | Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields | Type | Journal Article | ||
| Year | 1972 | Publication | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников | Abbreviated Journal | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
| Volume | 6 | Issue | Pages | 362-363 | |
| Keywords | Ge, cyclotron resonance, quantizing magnetic fields | ||||
| Abstract | |||||
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| Language | Summary Language | Original Title | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1774 | |||
| Permanent link to this record | |||||
| Author | Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V. | ||||
| Title | Development of disordered ultra-thin superconducting vanadium nitride films | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. 8th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 8th Int. Conf. Photonics and Information Optics |
| Volume | Issue | Pages | 425-426 | ||
| Keywords | VN films | ||||
| Abstract | We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained. | ||||
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| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-7262-2536-4 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf | Approved | no | ||
| Call Number | Serial | 1802 | |||
| Permanent link to this record | |||||
| Author | Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. | ||||
| Title | Characterization of topologies of superconducting photon number resolving detectors | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. 8th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 8th Int. Conf. Photonics and Information Optics |
| Volume | Issue | Pages | 465-466 | ||
| Keywords | PNR SSPD | ||||
| Abstract | Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated. | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-7262-2536-4 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf | Approved | no | ||
| Call Number | Serial | 1803 | |||
| Permanent link to this record | |||||
| Author | Мошкова, М. А.; Дивочий, А. В.; Морозов, П. В.; Антипов, А. В.; Вахтомин, Ю. Б.; Смирнов, К. В. | ||||
| Title | Оценка статистики распределения фотонов с использованием многоэлементного сверхпроводникового однофотонного детектора | Type | Conference Article | ||
| Year | 2019 | Publication | Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского | Abbreviated Journal | |
| Volume | Issue | Pages | 201-202 | ||
| Keywords | SSPD | ||||
| Abstract | Проведен сравнительный анализ топологий сверхпроводниковых однофотонных детекторов с способностью к разрешению до четырёх фотонов в коротком импульсе ИК излучения. Получен детектор, с системной квантовой эффективностью ~85% на λ=1550 нм. Продемонстрирована возможность его использования для распределения числа фотонов импульсного источника излучения. | ||||
| Address | Москва | ||||
| Corporate Author | Thesis | ||||
| Publisher | МИЭМ НИУ ВШЭ | Place of Publication | Editor | ||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1804 | |||
| Permanent link to this record | |||||
| Author | Золотов, Ф. И.; Смирнов, К. В. | ||||
| Title | Особенности осаждения разупорядоченных сверхтонких плёнок нитрида ванадия | Type | Conference Article | ||
| Year | 2019 | Publication | Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского | Abbreviated Journal | |
| Volume | Issue | Pages | 204-205 | ||
| Keywords | VN films | ||||
| Abstract | В работе изучены особенности роста сверхтонких плёнок нитрида ванадия толщиной ~10 нм. Обнаружено, что при изменении температуры подложки и общего давления газов в процессе осаждения плёнок меняется значение их поверхностного сопротивления вблизи перехода к сверхпроводящему состоянию. | ||||
| Address | Москва | ||||
| Corporate Author | Thesis | ||||
| Publisher | МИЭМ НИУ ВШЭ | Place of Publication | Editor | ||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1805 | |||
| Permanent link to this record | |||||
| Author | Райтович, А. А.; Пентин, И. В.; Золотов, Ф. И.; Селезнев, В. А.; Вахтомин, Ю. Б.; Смирнов, К. В. | ||||
| Title | Время энергетической релаксации электронов в сверхпроводниковых VN наноструктурах | Type | Conference Article | ||
| Year | 2018 | Publication | Сборник трудов 13 Всероссийской конференции молодых ученых | Abbreviated Journal | |
| Volume | Issue | Pages | 236-238 | ||
| Keywords | VN films | ||||
| Abstract | |||||
| Address | Саратовский филиал ИРЭ им. В.А. Котельникова РАН | ||||
| Corporate Author | Thesis | ||||
| Publisher | Техно-Декор | Place of Publication | Editor | ||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | Наноэлектроника, нанофотоника и нелинейная физика | ||
| Notes | http://nnnph.ru/data/documents/Sborni-trudov-NNNF-2018.pdf | Approved | no | ||
| Call Number | Serial | 1807 | |||
| Permanent link to this record | |||||
| Author | Zolotov, P. I.; Vakhtomin, Yu. B.; Divochiy, A. V.; Seleznev, V. A.; Smirnov, K. V. | ||||
| Title | Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons | Type | Journal Article | ||
| Year | 2016 | Publication | Proc. 5th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 5th Int. Conf. Photonics and Information Optics |
| Volume | Issue | Pages | 115-116 | ||
| Keywords | NbN SSPD | ||||
| Abstract | This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures. | ||||
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| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-7262-2215-8 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | http://fioconf.mephi.ru/files/2015/12/FIO2016-Sbornik.pdf Разработка технологии создания резонаторных структур для увеличения квантовой эффективности NBN детекторов ИК-фотонов | Approved | no | ||
| Call Number | Serial | 1811 | |||
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| Author | Корнеев, А. А.; Окунев, О. В.; Чулкова, Г. М.; Смирнов, К. В.; Милостная, И. И.; Минаева, О. В.; Корнеева, Ю. П.; Каурова, Н. С.; Воронов, Б. М.; Гольцман, Г. Н. | ||||
| Title | Спонтанные и фотоиндуцированные резистивные состояния в узких сверхпроводящих NbN полосках | Type | Book Whole | ||
| Year | 2015 | Publication | Abbreviated Journal | ||
| Volume | Issue | Pages | |||
| Keywords | NbN films | ||||
| Abstract | Монография посвящена актуальной проблеме современной фотоники: разработке высокочувствительных и быстродействующих сверхпроводниковых однофотонных детекторов на основе тонкой пленки NbN. В работе исследуются неравновесные процессы, протекающие в тонкой сверхпроводящей пленке после поглощения инфракрасного фотона и приводящие к возникновению резистивного состояния. На этих процессах основан механизм фотоотклика исследуемого в работе однофотонного детектора. В частности, исследуются зависимости квантовой эффективности и скорости темнового счета от геометрических параметров детектора: толщины пленки, ширины полоски, а также от величины транспортного тока детектора. Монография предназначена для студентов старших курсов, аспирантов и начинающих исследователей, работающих в области сверхпроводниковой наноэлектроники и радиофизики. | ||||
| Address | Москва | ||||
| Corporate Author | Thesis | ||||
| Publisher | МПГУ | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-4263-0269-3 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | УДК: 535; Число страниц: 108 | Approved | no | ||
| Call Number | Serial | 1812 | |||
| Permanent link to this record | |||||
| Author | Smirnov, K.; Vachtomin, Y.; Divochiy, A.; Antipov, A.; Goltsman, G. | ||||
| Title | The limitation of noise equivalent power by background radiation for infrared superconducting single photon detectors coupled to standard single mode optical fibers | Type | Journal Article | ||
| Year | 2015 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
| Volume | Issue | 5 | Pages | ||
| Keywords | NbN SSPD | ||||
| Abstract | We investigated the minimum level of the dark count rates and noise equivalent power of superconducting single photon detectors coupled to standard single mode optical fibers. We found that background radiation limits the minimum level of the dark count rates. We also proposed the effective method for reducing background radiation out of the required spectral range of the detector. Measured noise equivalent power of detector reaches 8.9×10-19 W×Hz1/2 at a wavelength of 1.55 μm and quantum efficiency 35%. | ||||
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| Notes | 14 pages | Approved | no | ||
| Call Number | Serial | 1813 | |||
| Permanent link to this record | |||||
| Author | Смирнов, Константин Владимирович; Чулкова, Галина Меркурьевна; Вахтомин, Юрий Борисович; Корнеев, Александр Александрович; Окунев, Олег Валерьевич; Дивочий, Александр Валерьевич; Семенов, Александр Владимирович; Гольцман, Григорий Наумович | ||||
| Title | Особенности разогрева и релаксации горячих электронов О-754 в тонкопленочных cверхпроводниковых наноструктурах и 2D полупроводниковых гетероструктурах при поглощении излучения инфракрасного и терагерцового диапазонов | Type | Book Whole | ||
| Year | 2014 | Publication | Abbreviated Journal | ||
| Volume | Issue | Pages | |||
| Keywords | 2DEG | ||||
| Abstract | В монографии рассмотрены основные особенности эффекта электронного разогрева в тонких сверхпроводниковых пленках и полупроводниковых гетеропереходах, возникающего при поглощении носителями заряда излучений терагерцового и инфракрасного диапазонов. Значительная часть монографии посвящена представлению современных достижений при использовании указанного эффекта для создания приемных устройств с рекордными характеристиками: терагерцовых гетеродинных и болометрических приемников на основе сверхпроводниковых и полупроводниковых структур; сверхпроводниковых приемников одиночных ИК фотонов. В работе также подробно рассмотрены основы современной сверхпроводниковой тонкопленочной технологии. Монография может быть полезна студентам старших курсов, аспирантам и начинающим исследователям, работающим в области физики твердого тела, оптики, радиофизики. |
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| Address | Москва | ||||
| Corporate Author | Thesis | ||||
| Publisher | МПГУ | Place of Publication | Editor | ||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-4263-0145-0 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | 240 страниц | Approved | no | ||
| Call Number | Serial | 1814 | |||
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| Author | Гольцман, Григорий Наумович; Корнеев, Александр Александрович; Антипов, Андрей Владимирович; Минаева, Ольга Вячеславовна; Дивочий, Александр Валерьевич; Антипов, Сергей Владимирович; Вахтомин, Юрий Борисович; Смирнов, Константин Владимирович | ||||
| Title | Способ фильтрации фонового излучения инфракрасного диапазона | Type | Patent | ||
| Year | 2014 | Publication | Abbreviated Journal | ||
| Volume | Issue | RU 2510056 C1 | Pages | ||
| Keywords | |||||
| Abstract | Изобретение относится к способам уменьшения интенсивности фонового излучения инфракрасного диапазона. Способ фильтрации фонового излучения инфракрасного диапазона, падающего на сверхпроводниковый однофотонный детектор, включает передачу излучения инфракрасного диапазона с длиной волны 0,4-1,8 микрометров на сверхпроводниковый однофотонный детектор при помощи одномодового волокна, частично находящегося при температуре 4,0-4,4 К. При этом длина охлаждаемого участка одномодового волокна составляет 0,2-3,5 м. Технический результат заключается в повышении надежности работы фотонных детекторов. 2 з.п. ф-лы. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1815 | |||
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| Author | Антипов, Андрей Владимирович; Дивочий, Александр Валерьевич; Вахтомин, Юрий Борисович; Финкель, Матвей Ильич; Смирнов, Константин Владимирович | ||||
| Title | Способ прецизионного позиционирования чувствительного элемента фотонного детектора | Type | Patent | ||
| Year | 2014 | Publication | Abbreviated Journal | ||
| Volume | Issue | RU 2506664 C1 | Pages | ||
| Keywords | |||||
| Abstract | Изобретение относится к способам, позволяющим производить совмещение фотонных детекторов относительно оптического излучения. Способ прецизионного позиционирования чувствительного элемента фотонного детектора относительно амплитудно-модулированного оптического излучения включает смещение чувствительного элемента фотонного детектора постоянным током с последующей регистрацией электрического сигнала, возникающего на контактах детектора на частоте модуляции излучения. Полученный при этом сигнал используют как параметр, определяющий качество позиционирования. Обеспечивается повышение технико-эксплуатационных характеристик детектора. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1816 | |||
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| Author | Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В. | ||||
| Title | Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе | Type | Book Whole | ||
| Year | 2012 | Publication | Abbreviated Journal | ||
| Volume | Issue | Pages | |||
| Keywords | 2DEG, AlGaAs/GaAs, NbN detectors | ||||
| Abstract | Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники. | ||||
| Address | Москва | ||||
| Corporate Author | Thesis | ||||
| Publisher | Прометей, МПГУ | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-4263-0118-4 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | УДК: 537.311 | Approved | no | ||
| Call Number | Serial | 1818 | |||
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| Author | Семенов, А. В.; Корнеев, А. А.; Лобанов, Ю. В.; Корнеева, Ю. П.; Рябчун, С. А.; Лаврова, О. С.; Третьяков, И. В.; Флоря, И. Н.; Силаев, М. А.; Кинев, Н. В.; Ковалюк, В. В.; Смирнов, К. В.; Гольцман, Г. Н. | ||||
| Title | Поляризация электромагнитной волны вблизи фокуса зеркала и системы зеркал в субтерагерцовом диапазоне частот | Type | Journal Article | ||
| Year | 2012 | Publication | Современные проблемы науки и образования | Abbreviated Journal | |
| Volume | Issue | 2 | Pages | ||
| Keywords | sub-terahertz radio telescope | ||||
| Abstract | Рассмотрено влияние оптической системы телескопа на поляризацию принимаемого электромагнитного сигнала. Описано изменение поляризации луча при отражении от произвольно ориентированной поверхности зеркала. Учтены искажения поляризации, обусловленные как отклонением лучей от первоначального направления, так и различием в коэффициентах отражения для разных поляризаций в случае неидеального отражения. В рамках метода Френеля получены оценочные формулы, дающие отношение амплитуд поля с исходной поляризацией и с поляризацией, перпендикулярной исходной, вблизи фокальной точки оптической системы. Формулы выведены для нескольких практически важных случаев, в том числе для параболического зеркала и системы двух зеркал. Оценена верхняя граница поляризационных искажений в пределах кружка Эйри. Полученные оценки согласуются с результатами численного расчёта для двухзеркального радиотелескопа субтерагерцового диапазона. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | 9 страниц; УДК 535-47 | Approved | no | ||
| Call Number | Serial | 1819 | |||
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| Author | Казаков, А. Ю.; Селиверстов, С. В.; Дивочий, А. В.; Смирнов, К. В.; Финкель, М. И.; Вахтомин, Ю. Б. | ||||
| Title | Возможность применения сверхпроводниковых материалов в качестве отражающего покрытия зеркала телескопа, предназначенного для наблюдений анизотропии реликтового излучения | Type | Journal Article | ||
| Year | 2012 | Publication | Преподаватель ХХI век | Abbreviated Journal | |
| Volume | Issue | 3 | Pages | 221-224 | |
| Keywords | submillimeter radio telescope | ||||
| Abstract | В статье исследуется возможность использования сверхпроводящего материала в качестве отражающего слоя зеркала субмиллиметрового телескопа, охлажденного до криогенных температур и предназначенного для наблюдений реликтового излучения. Для нескольких сверхпроводниковых материалов вычислен диапазон частот, в котором флуктуации теплового излучения покрытия меньше флуктуаций источника. Показана перспективность применения покрытия из Nb3Ge. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1820 | |||
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| Author | Семенов, А. В.; Корнеев, А. А.; Лобанов, Ю. В.; Корнеева, Ю. П.; Рябчун, С. А.; Третьяков, И. В.; Флоря, И. Н.; Смирнов, А. В.; Ковалюк, В. В.; Смирнов, К. В.; Гольцман, Г. Н. | ||||
| Title | Оценка поляризационных искажений, вносимых оптической системой радиотелескопа миллиметрового диапазона | Type | Journal Article | ||
| Year | 2012 | Publication | Преподаватель ХХI век | Abbreviated Journal | |
| Volume | Issue | 4 | Pages | 230-236 | |
| Keywords | millimeter radio telescope | ||||
| Abstract | В статье рассмотрена поляризация электромагнитного поля вблизи фокальной точки телескопической системы. Оценена верхняя граница поляризационных искажений, вносимых отражающими поверхностями, в том числе с учетом неидеальности отражения. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1821 | |||
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| Author | Семенов, А. В.; Корнеев, А. А.; Смирнов, А. В.; Смирнов, К. В.; Ожегов, Р. В.; Окунев, О. В.; Гольцман, Г. Н.; Девятов, И. А. | ||||
| Title | Линейные по мощности поглощаемого излучения поправки к спектральным функциям «грязного» сверхпроводника и отклик сверхпроводниковых детекторов | Type | Journal Article | ||
| Year | 2012 | Publication | Преподаватель ХХI век | Abbreviated Journal | |
| Volume | Issue | 3 | Pages | 216-220 | |
| Keywords | dirty superconductor film | ||||
| Abstract | В статье развит метод расчета малых поправок к спектральным функциям пленки «грязного» сверхпроводника, возникающих под действием поглощаемой мощности электромагнитного излучения. Метод пригоден в случае спектральных функций произвольного вида, что позволяет применять его для расчета отклика сверхпроводниковых детекторов излучения различного типа. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1822 | |||
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| Author | Корнеева, Ю. П.; Трифонов, А. В.; Вахтомин, Ю. Б.; Смирнов, К. В.; Корнеев, А. А.; Рябчун, С. А.; Третьяков, И. В.; Гольцман, Г. Н. | ||||
| Title | Расчет согласующего оптического резонатора для сверхпроводникового нанополоскового детектора | Type | Journal Article | ||
| Year | 2012 | Publication | Преподаватель ХХI век | Abbreviated Journal | |
| Volume | Issue | 3 | Pages | 225-227 | |
| Keywords | SSPD, SNSPD | ||||
| Abstract | В статье произведен расчет резонатора, предназначенного для согласования сверхпроводникового нанополоскового однофотонного детектора с оптическим сигналом. Показано, что для детектора, выполненного из пленки с типичным сопротивлением квадрата 500 Ом и коэффициентом заполнения 0.5 коэффициент согласования с излучением, поляризованным параллельно полоскам детектора, достигает величины около 60%. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1823 | |||
| Permanent link to this record | |||||
| Author | Semenov, A. V.; Devyatov, I. A.; Korneev, A. A.; Smirnov, K. V.; Goltsman, G. N.; Melnikov, A. P. | ||||
| Title | Derivation of expression for thermodynamic potential of “dirty” superconductor | Type | Journal Article | ||
| Year | 2012 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
| Volume | Issue | 4 | Pages | ||
| Keywords | dirty superconductor, Usadel theory, thermodynamic potential | ||||
| Abstract | We derive a formula for thermodynamic potential of dirty superconductor which express it via isotropic quasiclassical Green functions of Usadel theory. Our result allows unify description of dynamic processes and fluctuations in superconducting nano-electronic devices. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | 7 pages | Approved | no | ||
| Call Number | Serial | 1824 | |||
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| Author | Смирнов, А. В.; Карманцов, М. С.; Смирнов, К. В.; Вахтомин, Ю. Б.; Мастеров, Д. В.; Тархов, М. А.; Павлов, С. А.; Парафин, А. Е. | ||||
| Title | Терагерцовый отклик болометров на основе тонких пленок YBCO | Type | Journal Article | ||
| Year | 2012 | Publication | ЖТФ | Abbreviated Journal | ЖТФ |
| Volume | 82 | Issue | 12 | Pages | 108-111 |
| Keywords | YBCO HEB NEP | ||||
| Abstract | Представлены первые результаты измерения болометрического отклика высокотемпературных сверхпроводниковых детекторов на основе тонких пленок YBCO на электромагнитное излучение с частотой 2.5 THz. Минимальное значение оптической мощности, эквивалентной шуму созданных детекторов, составило 3.5· 10-9 W/sqrt(Hz)sqrt. Обсуждена возможность дальнейшего увеличения чувствительности исследуемых детекторов. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1825 | |||
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| Author | Чулкова, Галина Меркурьевна; Семёнов, Александр Владимирович; Тархов, Михаил Александрович; Гольцман, Григорий Наумович; Корнеев, Александр Александрович; Смирнов, Константин Владимирович | ||||
| Title | О возможности использования PNR-SNPD в системах телекоммуникационной связи | Type | Journal Article | ||
| Year | 2012 | Publication | Преподаватель ХХI век | Abbreviated Journal | |
| Volume | Issue | 2 | Pages | 244-246 | |
| Keywords | PNR SSPD, SNSPD, SNPD | ||||
| Abstract | Рассмотрена возможность применения сверхпроводникового нанополоскового детектора, разрешающего число фотонов (Photon-Number Resolving Superconducting Nanowire Photon Detector, PNR-SNPD), в качестве датчика приёмных модулей телекоммуникационных линий. Оценена мощность оптического импульса, необходимая для достижения приемлемо низкой доли ошибочных битов. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1826 | |||
| Permanent link to this record | |||||
| Author | Korneeva, Yu. P.; Trifonov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. | ||||
| Title | Design of resonator for superconducting single-photon detector | Type | Journal Article | ||
| Year | 2011 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
| Volume | Issue | 12 | Pages | ||
| Keywords | SSPD optical resonator, SNSPD | ||||
| Abstract | A resonator for superconducting single-photon detector is designed. Near 60% coupling with a radiation propagating from a dielectric substrate of optical fiber is demonstrated to be achieved for typical values of the detector’s film sheet resistance. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | 6 pages | Approved | no | ||
| Call Number | Serial | 1827 | |||
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| Author | Hübers, H.-W.; Semenov, A.; Richter, H.; Birk, Manfred; Krocka, Michael; Mair, Ulrich; Smirnov, K.; Gol'tsman, G.; Voronov, B. | ||||
| Title | Terahertz heterodyne receiver with a hot-electron bolometer mixer | Type | Conference Article | ||
| Year | 2002 | Publication | Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop | Abbreviated Journal | Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop |
| Volume | Issue | Pages | |||
| Keywords | NbN HEB mixers | ||||
| Abstract | During the past decade major advances have been made regarding low noise mixers for terahertz (THz) heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a µW power from the local oscillator (LO). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, are of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated the performance of the receiver. This yields important information for the development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA)[1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR. | ||||
| Address | Monterey, CA, USA | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | Wold, J.; Davidson, J. | ||
| Language | Summary Language | Original Title | |||
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| Notes | 4 pages; Unconfirmed but cited in https://kups.ub.uni-koeln.de/1622/1/bedorf.pdf; There is a Program of the Workshop: https://www.yumpu.com/en/document/view/7411055/far-ir-submm-mm-detector-technology-workshop-sofia-usra (there is no title of this article in the Program); There is also identical publication in Proc. ISSTT (Serial: 332, “A broadband terahertz heterodyne receiver with an NbN HEB mixer”). | Approved | no | ||
| Call Number | Serial | 1829 | |||
| Permanent link to this record | |||||
| Author | Смирнов, Константин Владимирович | ||||
| Title | Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе | Type | Manuscript | ||
| Year | 2000 | Publication | М. МПГУ | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords | 2DEG, AlGaAs/GaAs heterostructures, NbN films | ||||
| Abstract | Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств. | ||||
| Address | Москва, МПГУ | ||||
| Corporate Author | Thesis | Ph.D. thesis | |||
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| Notes | Approved | no | |||
| Call Number | Serial | 1830 | |||
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| Author | Гольцман, Г. Н.; Веревкин, А. А.; Гершензон, Е. М.; Птицина, Н. Г.; Смирнов, К. В.; Чулкова, Г. М. | ||||
| Title | Исследования процессов неупругой релаксации и примесная спектроскопия-релаксометрия в двумерном электронном газе в полупроводниковых структурах с квантовыми ямами | Type | Report | ||
| Year | 1995 | Publication | Abbreviated Journal | ||
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| Abstract | В гетероструктурах GaAs/AlGaAs впервые прямым методом измерена температурная зависимость вpемени энеpгетической pелаксации двумерного электронного газа te(T) в широком диапазоне температур Т=1,5 – 50 К в квазиравновесных условиях. Для измерений использовался высокочувствительный спектрометр миллиметрового диапазона волн с высоким временным разрешением, который позволял измерять релаксационные времена до 150 пс с погрешностью не более 20%. Верхний предел температуры определялся временным разрешением спектрометра. Исследования проводились на высококачественных образцах с поверхностной концентрацией носителей ns = 4,2 1011 см-2 и подвижностью m = 7 105 см2В-1с-1 (при Т = 4,2К). В квазиравновесных условиях из температурной зависимости tе определен предел подвижности при низких температурах (T<4.2 K), связанный с рассеянием на пьезоакустическом потенциале, получено время неупругой релаксации, связанное с рассеянием на деформационном потенциале (15 K25 K), получено характерное время испускания оптического фонона (tLO>4,5пс), которое существенно превышает время сронтанного излучения оптического фонона (примерно в 30 раз), что связано с большой ролью процессов перепоглащения фононов электронами.При низких температурах проведены измерения tе в условиях сильного разогрева. Полученные значения tе и зависимость tе от температуры электронов Те совпадают с tе(Т) в квазиравновесных условиях при Т=Те. Из полученных значений tе(Те) построена зависимость мощности энергетических потерь от Те, которая хорошо согласуется с литературными данными.Начаты измерения в магнитном поле, которые показывают переспективность использованного нами метода измерений как в области слабых магнитных полей при факторе заполнения >10, так и в области сильных магнитных полей при факторе заполнения >1-2. | ||||
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| Notes | Отчет о НИР/НИОКР; РФФИ: 95-02-06409-а; | Approved | no | ||
| Call Number | Serial | 1831 | |||
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| Author | Гольцман, Г. Н.; Смирнов, К. В. | ||||
| Title | По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах | Type | Journal Article | ||
| Year | 2001 | Publication | Письма в ЖЭТФ | Abbreviated Journal | Письма в ЖЭТФ |
| Volume | 74 | Issue | 9 | Pages | 532-538 |
| Keywords | 2DEG, AlGaAs/GaAs heterostructures | ||||
| Abstract | Рассмотрены теоретические и экспериментальные работы, посвященные изучению электрон-фононного взаимодействия в двумерном электронном газе полупроводниковых гетероструктур при низких температурах в случае сильного разогрева в электрическом поле, в квазиравновесных условиях и в квантующем магнитном поле, перпендикулярном 2D слою. | ||||
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| Notes | Duplicated as 1541: “Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures” | Approved | no | ||
| Call Number | Serial | 1832 | |||
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| Author | Селиверстов, С. В.; Финкель, М. И.; Рябчун, С. А.; Воронов, Б. М.; Каурова, Н. С.; Селезнев, В. А.; Смирнов, К. В.; Вахтомин, Ю. Б.; Пентин, И. В.; Гольцман, Г. Н. | ||||
| Title | Терагерцевый сверхпроводниковый детектор с аттоджоулевым энергетическим разрешением и постоянной времени 25 пс | Type | Conference Article | ||
| Year | 2014 | Publication | Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» | Abbreviated Journal | |
| Volume | 1 | Issue | Pages | 91-92 | |
| Keywords | NbN HEB | ||||
| Abstract | Представлены результаты измерения энергетического разрешения терагерцевого сверхпроводникового NbN-детектора на эффектеэлектронного разогрева, работающего при температуре около 10 К. Использование инновационной in situ технологии производства привело к существенному улучшению чувствительности детектора. Увеличение быстродействия детектора было достигнуто за счет реализации дополнительного диффузионного канала охла-ждения электронной подсистемы. Измеренное значение эквивалентной мощности шума на частоте 2.5 ТГц составило 2.0×10-13Вт•Гц-0.5, постоянной времени 25 пс. Соответствующее расчетное значение энергетического разрешения составило 2.5 аДж. | ||||
| Address | Нижний Новгород, Россия | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1833 | |||
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| Author | Бурмистрова, А. В.; Девятов, И. А. | ||||
| Title | Расчет электронного транспорта в гетероструктурах, содержащих многозонные сверхпроводники | Type | Conference Article | ||
| Year | 2014 | Publication | Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» | Abbreviated Journal | |
| Volume | 1 | Issue | Pages | 21-22 | |
| Keywords | N/I/Sp junctions | ||||
| Abstract | В рамках приближения сильной связи теоретически рассчитаны проводимости контактов вида нормальный металл/изолятор/одноорбитальный сверхпроводник с p-типом сверхпроводящего спаривания (N/I/Sp). Объяснено наблюдаемое экспериментально как появление пика при нулевом напряжении, так и его расщепление в зависимости от толщины слоя изолятора. В рамках этой же микроскопической теории развит вариант техники решеточной функции Грина в мацубаровом представлении. Используя разработанный подход, рассчитаны фазовые и температурные зависимости тока Джозефсона для контакта сверхпроводника s-типа и многозонного железосодержащего сверхпроводника (ферропниктида) для различных ориентаций границы по отношению к кристаллографическим осям пниктида. | ||||
| Address | Нижний Новгород, Россия | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1834 | |||
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| Author | Кардакова, А. И.; Финкель, М. И.; Морозов, Д. В.; Ковалюк, В. В.; Ан, П. П.; Гольцман, Г. Н. | ||||
| Title | Время электрон-фононного взаимодействия в сверхпроводниковых пленках нитрида титана | Type | Conference Article | ||
| Year | 2014 | Publication | Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» | Abbreviated Journal | |
| Volume | 1 | Issue | Pages | 47-48 | |
| Keywords | TiN films | ||||
| Abstract | Определены времена электрон-фононного взаимодействия в тонких сверхпроводниковых пленках нитрида титана. Измеренные значения τ_eph находятся в диапазоне от 5.5 нс до 88 нс при температурах 4,2 К и 1,7 К, соответственно, и соответствуют температурной зависимости Т^-3. | ||||
| Address | Нижний Новгород, Россия | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1835 | |||
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| Author | Корнеева, Ю. П.; Михайлов, М. М.; Манова, Н. Н.; Дивочий, А. А.; Корнеев, А. А.; Вахтомин, Ю. Б.; Першин, Ю. П.; Гольцман, Г. Н. | ||||
| Title | Сверхпроводниковый однофотонный детектор на основе аморфных пленок MoSi | Type | Conference Article | ||
| Year | 2014 | Publication | Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» | Abbreviated Journal | |
| Volume | 1 | Issue | Pages | 53-54 | |
| Keywords | MoSi SSPD | ||||
| Abstract | Нами были изготовлены и исследованы однофотонные детекторы на основе сверхпроводящих пленок Mo x Si 1-x двух различных стехиометрий: Mo 3 Si и Mo 4 Si. При температуре 1.7 К лучшие детекторы площадью 7 мкм*7 мкм на основе этих пленок продемонстрировали системную квантовую эффективность 18% при скорости темнового счета 10 с -1 на длине волны 1.2 мкм с использованием неполяризованного источника, длительность импульса – 6 нс, джиттер – 120 пс. | ||||
| Address | Нижний Новгород, Россия | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1836 | |||
| Permanent link to this record | |||||
| Author | Смирнов, К. В. | ||||
| Title | AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона | Type | Abstract | ||
| Year | 2003 | Publication | Тезисы докладов VI Российской конференции по физике полупроводников | Abbreviated Journal | |
| Volume | Issue | Pages | 181 | ||
| Keywords | 2DEG, AlGaAs/GaAs heterostructures, mixer | ||||
| Abstract | |||||
| Address | ФТИ им. А. Ф. Иоффе, Санк-Петербург | ||||
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| Area | Expedition | Conference | VI Российской конференции по физике полупроводников (27-31 октября) | ||
| Notes | Unconfirmed; Сама конференция, однако, была -- её упоминают: [http://www.nsc.ru/HBC/article.phtml?nid=271&id=17], [https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/lab-20/publikatsii/2003], [http://www.ioffe.ru/sem_tech/sem%5Fteh%5Fmovpe%5Fpublications%5Fru.htm#R2003], [https://istina.ips.ac.ru/collections/828771/] | Approved | no | ||
| Call Number | Serial | 1837 | |||
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| Author | Tiulina, V.; Iomdina, E.; Goltsman, G.; Seliverstov, S.; Sianosyan, A.; Teplyakova, K.; Rusova, A.; Zaitsev, S.; Zernii, E.; Senin, I. | ||||
| Title | UVB promotes the initiation of uveitic inflammatory and changes in thehydration of the cornea in vivo | Type | Miscellaneous | ||
| Year | 2019 | Publication | FEBS Open Bio | Abbreviated Journal | FEBS Open Bio |
| Volume | 9 | Issue | S1 | Pages | 79 |
| Keywords | medicine; scheimpflug imaging; UVB; confocal microscopy; cornea; optical coherent tomography; rabbit eyes; terahertz radiation | ||||
| Abstract | Recently, active research has been conducted in the field of terahertz (THz) scanning of human tissues for noninvasive determination of their hydration level, which haves hown high diagnostic efficiency of this technology in various pathological conditions. Recently, we have developed a laboratory model of the facility for monitoring the state of the water balance of the cornea using THz scanning in vivo, which opens up the possibility of applying this approach in ophthalmology. The aim of the work wasto compare the results of the THz scan of the cornea with its clinical changes using the example of an experimental model of the UV induced keratouveitis. Anexperimental study, which included a comprehensive assessment of clinical changes in the cornea of rabbits during keratouveitis induction, revealed a decrease in the stability of the tear film, pathological changes in the corneal epithelium and stroma, as well as its anatomical and optical parameters. Comparison of data obtained in the THz scan of the cornea with tears production, optical coherence tomography and confocal microscopy showed their consistency in all observation periods, which allows us to conclude that the developed laboratory setup works and the feasibility of further research to promote the corneal hydration evaluation technology in clinical practice. Acknowledgements: Research was funded by the RSF, grant number 161500255. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2211-5463 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Poster P-01-040 | Approved | no | ||
| Call Number | Serial | 1276 | |||
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| Author | Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. | ||||
| Title | Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation | Type | Journal Article | ||
| Year | 2021 | Publication | Adv. Electron. Mater. | Abbreviated Journal | Adv. Electron. Mater. |
| Volume | 7 | Issue | 3 | Pages | 2000872 |
| Keywords | SWCNT transistors | ||||
| Abstract | The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2199-160X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1843 | |||
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| Author | Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G. | ||||
| Title | Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors | Type | Journal Article | ||
| Year | 2018 | Publication | Phys. Status Solidi B | Abbreviated Journal | Phys. Status Solidi B |
| Volume | 255 | Issue | 1 | Pages | 1700227 (1 to 6) |
| Keywords | carbon nanotube schottky diodes, CNT | ||||
| Abstract | Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz. | ||||
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| ISSN | 0370-1972 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1321 | |||
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| Author | Gol'tsman, G. N.; Korneev, A.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Minaeva, O.; Smirnov, K.; Voronov, B.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R. | ||||
| Title | Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications | Type | Journal Article | ||
| Year | 2005 | Publication | Phys. Stat. Sol. (C) | Abbreviated Journal | Phys. Stat. Sol. (C) |
| Volume | 2 | Issue | 5 | Pages | 1480-1488 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We present our progress on the research and development of NbN superconducting single‐photon detectors (SSPD's) for ultrafast counting of near‐infrared photons for secure quantum communications. Our SSPD's operate in the quantum detection mode based on the photon‐induced hotspot formation and subsequent development of a transient resistive barrier across an ultrathin and submicron‐width superconducting stripe. The devices are fabricated from 4‐nm‐thick NbN films and kept in the 4.2‐ to 2‐K temperature range. The detector experimental quantum efficiency in the photon‐counting mode reaches above 40% for the visible light and up to 30% in the 1.3‐ to 1.55‐µm wavelength range with dark counts below 0.01 per second. The experimental real‐time counting rate is above 2 GHz and is limited by our readout electronics. The SSPD's timing jitter is below 18 ps, and the best‐measured value of the noise‐equivalent power (NEP) is 5 × 10–21 W/Hz1/2 at 1.3 µm. In terms of quantum efficiency, timing jitter, and maximum counting rate, our NbN SSPD's significantly outperform semiconductor avalanche photodiodes and photomultipliers in the 1.3‐ to 1.55‐µm range. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1610-1634 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1479 | |||
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| Author | Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Room temperature silicon detector for IR range coated with Ag2S quantum dots | Type | Journal Article | ||
| Year | 2019 | Publication | Phys. Status Solidi RRL | Abbreviated Journal | Phys. Status Solidi RRL |
| Volume | 13 | Issue | 9 | Pages | 1900187-(1-6) |
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| Abstract | For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1862-6254 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1149 | |||
| Permanent link to this record | |||||
| Author | Semenov, A. D.; Hübers, H.-W.; Gol’tsman, G. N.; Smirnov, K. | ||||
| Title | Superconducting quantum detector for astronomy and X-ray spectroscopy | Type | Conference Article | ||
| Year | 2002 | Publication | Proc. Int. Workshop on Supercond. Nano-Electronics Devices | Abbreviated Journal | Proc. Int. Workshop on Supercond. Nano-Electronics Devices |
| Volume | Issue | Pages | 201-210 | ||
| Keywords | NbN SSPD, SNSPD, SQD, superconducting quantum detectors, X-ray spectroscopy | ||||
| Abstract | We propose the novel concept of ultra-sensitive energy-dispersive superconducting quantum detectors prospective for applications in astronomy and X-ray spectroscopy. Depending on the superconducting material and operation conditions, such detector may allow realizing background limited noise equivalent power 10−21 W Hz−1/2 in the terahertz range when exposed to 4-K background radiation or counting of 6-keV photon with almost 10—4 energy resolution. Planar layout and relatively simple technology favor integration of elementary detectors into a detector array. | ||||
| Address | Naples, Italy | ||||
| Corporate Author | Thesis | ||||
| Publisher | Springer | Place of Publication | Boston, MA | Editor | Pekola, J.; Ruggiero, B.; Silvestrini, P. |
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-1-4615-0737-6 | Medium | ||
| Area | Expedition | Conference | International Workshop on Superconducting Nano-Electronics Devices, May 28-June 1, 2001 | ||
| Notes | Approved | no | |||
| Call Number | semenov2002superconducting | Serial | 1525 | ||
| Permanent link to this record | |||||
| Author | Fiore, A.; Marsili, F.; Bitauld, D.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G. | ||||
| Title | Counting photons using a nanonetwork of superconducting wires | Type | Conference Article | ||
| Year | 2009 | Publication | Nano-Net | Abbreviated Journal | |
| Volume | Issue | Pages | 120-122 | ||
| Keywords | SSPD, SNSPD | ||||
| Abstract | We show how the parallel connection of photo-sensitive superconducting nanowires can be used to count the number of photons in an optical pulse, down to the single-photon level. Using this principle we demonstrate photon-number resolving detectors with unprecedented sensitivity and speed at telecommunication wavelengths. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Springer Berlin Heidelberg | Place of Publication | Berlin, Heidelberg | Editor | Cheng, M. |
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 978-3-642-02427-6 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | 10.1007/978-3-642-02427-6_20 | Serial | 1242 | ||
| Permanent link to this record | |||||
| Author | Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M. | ||||
| Title | Thermal boundary resistance at YBaCuO film-substrate interface | Type | Conference Article | ||
| Year | 1993 | Publication | Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences | Abbreviated Journal | Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
| Volume | 112 | Issue | Pages | 405-406 | |
| Keywords | YBCO films | ||||
| Abstract | The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | Meissner, M.; Pohl, R. O. | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1665 | |||
| Permanent link to this record | |||||
| Author | Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gershenzon, E. M. | ||||
| Title | Electron-phonon interaction in thin YBaCuO films and fast detectors | Type | Conference Article | ||
| Year | 1993 | Publication | Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences | Abbreviated Journal | Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
| Volume | 112 | Issue | Pages | 184-185 | |
| Keywords | YBCO HTS detectors | ||||
| Abstract | The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | Meissner, M.; Pohl, R. O. | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1662 | |||
| Permanent link to this record | |||||
| Author | Heusinger, M. A.; Nebosis,R. S.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. | ||||
| Title | Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa2Cu3O7-δ thin film | Type | Conference Article | ||
| Year | 1993 | Publication | Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences | Abbreviated Journal | Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
| Volume | 112 | Issue | Pages | 193-195 | |
| Keywords | YBCO HTS detectors | ||||
| Abstract | We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | Meissner, M.; Pohl, R. O. | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1663 | |||
| Permanent link to this record | |||||
| Author | Sergeev, A. V.; Livanov, D. V. | ||||
| Title | Phonon renormalization of thermoelectric power of high-Tc materials | Type | Conference Article | ||
| Year | 1993 | Publication | Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences | Abbreviated Journal | Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
| Volume | 112 | Issue | Pages | 204-205 | |
| Keywords | HTS, YBCO | ||||
| Abstract | Renormalization of thermoelectric power due to Nielsen — Taylor effect (interference between electron-phonon and electron- impurity interactions) is used for the explanation of the temperature dependence and sign of the thermopower in high-Tc materials. In the framework of the model the negative sign of TEP of untwinned YBa2Cu3O7−x crystal in a-direction observed by Howson et. al. is connected to the strong hole scattering via O-vacancies in chains. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | Meissner, M.; Pohl, R. O. | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1664 | |||
| Permanent link to this record | |||||
| Author | Ozhegov, R. V.; Gorshkov, K. N.; Vachtomin, Y. B.; Smirnov, K. V.; Finkel, M. I.; Goltsman, G. N.; Kiselev, O. S.; Kinev, N. V.; Filippenko, L. V.; Koshelets, V. P. | ||||
| Title | Terahertz imaging system based on superconducting heterodyne integrated receiver | Type | Conference Article | ||
| Year | 2014 | Publication | Proc. THz and Security Applications | Abbreviated Journal | Proc. THz and Security Applications |
| Volume | Issue | Pages | 113-125 | ||
| Keywords | SIS mixer, SIR, THz imaging | ||||
| Abstract | The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compared to traditional systems. In this project we propose a prototype THz imaging system using an 1 pixel SIR and 2D scanner. At a local oscillator frequency of 500 GHz the best noise equivalent temperature difference (NETD) of the SIR is 10 mK at an integration time of 1 s and a detection bandwidth of 4 GHz. The scanner consists of two rotating flat mirrors placed in front of the antenna consisting of a spherical primary reflector and an aspherical secondary reflector. The diameter of the primary reflector is 0.3 m. The operating frequency of the imaging system is 600 GHz, the frame rate is 0.1 FPS, the scanning area is 0.5 × 0.5 m2, the image resolution is 50 × 50 pixels, the distance from an object to the scanner was 3 m. We have obtained THz images with a spatial resolution of 8 mm and a NETD of less than 2 K. |
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| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Springer Netherlands | Place of Publication | Dordrecht | Editor | Corsi, C.; Sizov, F. |
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 978-94-017-8828-1 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1368 | |||
| Permanent link to this record | |||||
| Author | Lang, P. T.; Leipold, I.; Knott, W. J.; Semenov, A. D.; Gol'tsman, G. N.; Renk, K. F. | ||||
| Title | New far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser | Type | Journal Article | ||
| Year | 1991 | Publication | Appl. Phys. B | Abbreviated Journal | Appl. Phys. B |
| Volume | 53 | Issue | 4 | Pages | 207-212 |
| Keywords | CO2 IR lasers, applications, CH3Cl, CH3Br | ||||
| Abstract | In this paper we report on the detection of new far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser. We found 80 new lines for CH3Cl and 9 new lines for CH3Br in the frequency region between 16 cm−1 and 41 cm−1, all due to stimulated Raman scattering. For the Raman gain regions bandwidths up to about 700 MHz were found. We also observed high intensity short far-infrared laser pulses of durations in the nanosecond regime. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0721-7269 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1678 | |||
| Permanent link to this record | |||||
| Author | Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. | ||||
| Title | Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses | Type | Journal Article | ||
| Year | 1994 | Publication | J. Supercond. | Abbreviated Journal | J. Supercond. |
| Volume | 7 | Issue | 4 | Pages | 751-755 |
| Keywords | YBCO HTS detector, nonequilibrium response | ||||
| Abstract | The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0896-1107 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1636 | |||
| Permanent link to this record | |||||
| Author | Sergeev, A.; Semenov, A.; Trifonov, V.; Karasik, B.; Gol'tsman, G.; Gershenzon, E. | ||||
| Title | Heat transfer in YBaCuO thin film/sapphire substrate system | Type | Journal Article | ||
| Year | 1994 | Publication | J. Supercond. | Abbreviated Journal | J. Supercond. |
| Volume | 7 | Issue | 2 | Pages | 341-344 |
| Keywords | YBCO films | ||||
| Abstract | The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0896-1107 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1647 | |||
| Permanent link to this record | |||||
| Author | Zorin, M.; Lindgren, M.; Danerud, M.; Karasik, B.; Winkler, D.; Gol'tsman, G.; Gershenzon, E. | ||||
| Title | Nonequilibrium and bolometric responses of YBaCuO thin films to high-frequency modulated laser radiation | Type | Journal Article | ||
| Year | 1995 | Publication | J. Supercond. | Abbreviated Journal | J. Supercond. |
| Volume | 8 | Issue | 1 | Pages | 11-15 |
| Keywords | YBCO HTS HEB | ||||
| Abstract | Picosecond nonequilibrium and slow bolometric responses to infrared radiation from a patterned high-T c superconducting (HTS) film in resistive and normal states deposited onto LaAlO3, NdGaO3, and MgO substrates were investigated using both pulse and modulation techniques. The response time of 35 ps to a laser pulse of 17 ps FWHM has been observed. The intrinsic response time of the fast process is expected to be about a few picoseconds. The modulation technique, being free from the disadvantages of pulse methods (poor sensitivity, limited dynamic range), makes the detailed study of a number of relaxation processes possible. Besides the nonequilibrium response, two kinds of bolometric processes, namely phonon transport through the film-substrate interface and phonon thermal diffusion in a substrate, manifest themselves in certain frequency dependences. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0896-1107 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1630 | |||
| Permanent link to this record | |||||
| Author | Lang, P. T.; Knott, W. J.; Leipold, I.; Renk, K. F.; Semenov, A. D.; Gol'tsman, G. N. | ||||
| Title | Generation and detection of tunable ultrashort infrared and far-infrared radiation pulses of high intensity | Type | Journal Article | ||
| Year | 1992 | Publication | Int. J. of Infrared and Millimeter Waves | Abbreviated Journal | Int. J. of Infrared and Millimeter Waves |
| Volume | 13 | Issue | 3 | Pages | 373-380 |
| Keywords | CO2 IR lasers, FIR | ||||
| Abstract | We report on generation and detection of intense pulsed radiation with frequency tunability in the infrared and far-infrared spectral regions. Infrared radiation is generated with a transversally electrically excited high pressure CO2 laser. A laser pulse of a total duration of about 300 ns consisted, due to self mode locking, of a series of single pulses, some with pulse durations of less than 450 ps and peak powers larger than 20 MW. Using these pulses for optical with durations less than 400 ps were obtained. For detection a new ultrafast superconducting detector was used. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0195-9271 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1671 | |||
| Permanent link to this record | |||||
| Author | Gousev, Y. P.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M.; Semenov, A. D.; Barowski, H. S.; Nebosis, R. S.; Renk, K. F. | ||||
| Title | Quasioptical superconducting hot electron bolometer for submillmeter waves | Type | Journal Article | ||
| Year | 1996 | Publication | Int. J. of Infrared and Millimeter Waves | Abbreviated Journal | Int. J. of Infrared and Millimeter Waves |
| Volume | 17 | Issue | 2 | Pages | 317-331 |
| Keywords | NbN HEB | ||||
| Abstract | We report on a superconducting hot electron bolometer coupled to radiation via a broadband antenna. The bolometer, a structured NbN film, was patterned on a thin dielectric membrane between terminals of a gold slotline antenna. We investigated the response to submillimeter radiation (wave-lengths ∼ 0.1 mm to 0.7 mm) in the fundamental Gaussian mode. We found that the directivity of the antenna was constant within a factor of 2.5 through the whole experimental range. The noise equivalent power of the bolometer at 119 µm was ∼ 3 · 10−13 W/Hz1/2; a time constant of ∼ 160 ps was estimated. | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0195-9271 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1618 | |||
| Permanent link to this record | |||||
| Author | Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. | ||||
| Title | Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films | Type | Conference Article | ||
| Year | 1996 | Publication | Czech J. Phys. | Abbreviated Journal | Czech J. Phys. |
| Volume | 46 | Issue | S5 | Pages | 2489-2490 |
| Keywords | Al, Be, Nb films | ||||
| Abstract | The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K). | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0011-4626 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1767 | |||
| Permanent link to this record | |||||
| Author | Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. | ||||
| Title | Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity | Type | Conference Article | ||
| Year | 1996 | Publication | Czech. J. Phys. | Abbreviated Journal | Czech. J. Phys. |
| Volume | 46 | Issue | S2 | Pages | 857-858 |
| Keywords | NbC films | ||||
| Abstract | Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory. | ||||
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| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0011-4626 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1617 | |||
| Permanent link to this record | |||||