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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.
	Title	Submillimeter backward wave tube spectrometer for measuring superconducting film transmission			Type	Journal Article
	Year	1983	Publication	Pribory i Tekhnika Eksperimenta	Abbreviated Journal	Pribory i Tekhnika Eksperimenta
	Volume	26	Issue	5	Pages	134-137
	Keywords	BWO spectroscopy, spectrometer, transmission
	Abstract	A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0032-8162	ISBN		Medium
	Area		Expedition		Conference
	Notes	Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок			Approved	no
	Call Number				Serial	1713
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	Author	Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors			Type	Journal Article
	Year	1983	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
	Volume	17	Issue	8	Pages	908-913
	Keywords	BWO spectroscopy, pure semiconductors, residual impurities
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках			Approved	no
	Call Number				Serial	1714
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	Author	Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Kinetics of submillimeter impurity and exciton photoconduction in Ge			Type	Journal Article
	Year	1982	Publication	Optics and Spectroscopy	Abbreviated Journal	Optics and Spectroscopy
	Volume	52	Issue	4	Pages	454-455
	Keywords	Ge, exciton photoconduction
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1715
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	Author	Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Heating of quasiparticles in a superconducting film in the resistive state			Type	Journal Article
	Year	1981	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	34	Issue	5	Pages	268-271
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1716
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	Author	Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state			Type	Journal Article
	Year	1982	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	36	Issue	7	Pages	296-299
	Keywords	HEB
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии			Approved	no
	Call Number				Serial	1717
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Cross section for binding of free carriers into excitons in germanium			Type	Journal Article
	Year	1981	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	33	Issue	11	Pages	574
	Keywords	Ge, excitons, photoconductivity
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1718
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Population and lifetime of excited states of shallow impurities in Ge			Type	Journal Article
	Year	1979	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	49	Issue	2	Pages	355-362
	Keywords	Ge, photothermal ionization, shallow impurities
	Abstract	An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1719
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G.
	Title	Capture of photoexcited carriers by shallow impurity centers in germanium			Type	Journal Article
	Year	1979	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	50	Issue	4	Pages	728-734
	Keywords	Ge, photoexcited carriers, shallow impurity centers
	Abstract	Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1720
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L.
	Title	Observation of free carrier resonances in p-type germanium at submillimeter wavelengths			Type	Journal Article
	Year	1978	Publication	Sov. Phys. Solid State	Abbreviated Journal	Sov. Phys. Solid State
	Volume	20	Issue	4	Pages	573-579
	Keywords	p-Ge, free carriers, resonances
	Abstract	The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1721
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	Author	Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M.
	Title	Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it			Type	Conference Article
	Year	1978	Publication	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya	Abbreviated Journal	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
	Volume	42	Issue	6	Pages	1142-1148
	Keywords	energy spectrum, Ge, magnetic field
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1722
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	Author	Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N.
	Title	Population of excited-states of small admixtures in germanium			Type	Conference Article
	Year	1978	Publication	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya	Abbreviated Journal	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
	Volume	42	Issue	6	Pages	1154-1159
	Keywords	Ge, excited states, admixtures
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1723
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	Author	Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I.
	Title	Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors			Type	Conference Article
	Year	1978	Publication	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya	Abbreviated Journal	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
	Volume	42	Issue	6	Pages	1231-1234
	Keywords	spectrum, semiconductors, admixtures, strong magnetic-field
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	blagosklonskaya1978effect			Serial	1724
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	Author	Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I.
	Title	Effect of a strong magnetic field on the spectrum of donors in InSb			Type	Journal Article
	Year	1978	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
	Volume	11	Issue	12	Pages	1395-1397
	Keywords	InSb, spectrum of donors, strong magnetic field
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1725
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	Author	Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G.
	Title	Carrier lifetime in excited states of shallow impurities in germanium			Type	Journal Article
	Year	1977	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	25	Issue	12	Pages	539-543
	Keywords	Ge, shallow impurities, excited states
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1726
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L.
	Title	Energy spectrum of acceptors in germanium and its response to a magnetic field			Type	Journal Article
	Year	1977	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	45	Issue	4	Pages	769-776
	Keywords	p-Ge, photoconductivity, energy spectrum, magnetic field
	Abstract	We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1727
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
	Title	Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field			Type	Journal Article
	Year	1977	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	45	Issue	3	Pages	555-565
	Keywords	Ge, GaAs, magnetic field, donors, energy spectrum
	Abstract	The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1728
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	Author	Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
	Title	Effect of a high magnetic field on the spectrum of donors in InSb			Type	Journal Article
	Year	1977	Publication	Fizika i Tekhnika Poluprovodnikov	Abbreviated Journal	Fizika i Tekhnika Poluprovodnikov
	Volume	11	Issue	12	Pages	2373-2375
	Keywords	InSb, energy spectrum, donors, high magnetic field
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Воздействие сильного магнитного поля на спектр доноров в InSb			Approved	no
	Call Number				Serial	1729
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	Author	Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I.
	Title	Intervalley cyclotron-impurity resonance of electrons in n-Ge			Type	Journal Article
	Year	1976	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	24	Issue	3	Pages	125-128
	Keywords	n-Ge, cyclotron-impurity resonance
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1730
Permanent link to this record



	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Investigation of free excitons in Ge and their condensation at submillimeter wavelengths			Type	Journal Article
	Year	1976	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	43	Issue	1	Pages	116-122
	Keywords	Ge, free excitons
	Abstract	Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1731
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	Author	Gershenzon, E. M.; Goltsman, G. N.; Orlov, L.
	Title	Investigation of population and ionization of donor excited states in Ge			Type	Conference Article
	Year	1976	Publication	Physics of Semiconductors	Abbreviated Journal	Physics of Semiconductors
	Volume		Issue		Pages	631-634
	Keywords	Ge, donor excited states
	Abstract
	Address	Amsterdam
	Corporate Author				Thesis
	Publisher	North-Holland Publishing Co.	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1732
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	Author	Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G.
	Title	Investigation of excited donor states in GaAs			Type	Journal Article
	Year	1974	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
	Volume	7	Issue	10	Pages	1248-1250
	Keywords	GaAs, excited donor states
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1733
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	Author	Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G.
	Title	Energy spectrum of free excitons in germanium			Type	Journal Article
	Year	1973	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	18	Issue	3	Pages	93
	Keywords	Ge, free excitons, energy spectrum
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1734
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Submillimeter spectroscopy of semiconductors			Type	Journal Article
	Year	1973	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	37	Issue	2	Pages	299-304
	Keywords	semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons
	Abstract	The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1735
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	Author	Goltsman, G.
	Title	Simple method for stabilizing power of submillimetric spectrometer			Type	Journal Article
	Year	1972	Publication	Pribory i Tekhnika Eksperimenta	Abbreviated Journal	Pribory i Tekhnika Eksperimenta
	Volume		Issue	1	Pages	136
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1738
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P.
	Title	Binding energy of a carrier with a neutral impurity atom in germanium and in silicon			Type	Journal Article
	Year	1971	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	14	Issue	5	Pages	185-186
	Keywords	Ge, Si, neutral impurity atom, binding energy
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1739
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.
	Title	Transitions of electrons between excited states of donors in germanium			Type	Journal Article
	Year	1971	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	14	Issue	2	Pages	63-65
	Keywords	Ge, donors, excited states
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1740
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	Author	Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y.
	Title	Germanium hot-electron narrow-band detector			Type	Journal Article
	Year	1971	Publication	Sov. Radio Engineering And Electronic Physics	Abbreviated Journal	Sov. Radio Engineering And Electronic Physics
	Volume	16	Issue	8	Pages	1346
	Keywords	Ge HEB detectors
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
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	Notes				Approved	no
	Call Number				Serial	1741
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M.
	Title	Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium			Type	Journal Article
	Year	1971	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	14	Issue	6	Pages	241
	Keywords	Ge, gamma irradiation, defects, impurities
	Abstract
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Notes				Approved	no
	Call Number				Serial	1742
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	Author	Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory
	Title	Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors			Type	Abstract
	Year	2020	Publication	Graphene and 2dm Virt. Conf.	Abbreviated Journal	Graphene and 2DM Virt. Conf.
	Volume		Issue		Pages
	Keywords	single layer graphene, SLG, CVD, plasmons, FET
	Abstract	Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464.
	Address	Grenoble, France
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Series Volume		Series Issue		Edition
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	Area		Expedition		Conference	Graphene and 2dm Virtual Conference & Expo
	Notes				Approved	no
	Call Number				Serial	1743
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	Author	Goltsman, Gregory
	Title	Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors			Type	Conference Article
	Year	2017	Publication	16th ISEC	Abbreviated Journal	16th ISEC
	Volume		Issue		Pages	Th-I-QTE-03 (1 to 3)
	Keywords	waveguide SSPD, SNSPD
	Abstract	We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chipquantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Series Volume		Series Issue		Edition
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	Area		Expedition		Conference	IEEE/CSC & ESAS Superconductivity News Forum
	Notes				Approved	no
	Call Number				Serial	1745
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	Author	Gol’tsman, G.N.
	Title	Overview of recent results for superconducting NbN terahertz and optical detectors and mixers			Type	Miscellaneous
	Year	2014	Publication	SM2 – Seminar on Terahertz Photonics	Abbreviated Journal
	Volume		Issue		Pages	0562
	Keywords	NbN SSPD, SNSPD, HEB
	Abstract	We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications.
	Address
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	Language		Summary Language		Original Title
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	Notes				Approved	no
	Call Number				Serial	1746
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	Author	Pentin, Ivan; Finkel, Matvey; Maslennikov, Sergey; Vakhtomin, Yuri; Smirnov, Konstantin; Kaurova, Nataliya; Goltsman, Gregory
	Title	Superconducting hot-electron-bolometer mixers for the mid-IR			Type	Journal Article
	Year	2017	Publication	Rus. J. Radio Electron.	Abbreviated Journal	Rus. J. Radio Electron.
	Volume		Issue	10	Pages
	Keywords	IR NbN HEB mixers
	Abstract	The work presents the result of development of the NbN superconducting hot-electron-bolometer (HEB) mixer. The sensitive element of the mixer is directly coupled to mid-IR radiation, and doesn’t have planar metallic antenna. Investigations of noise characteristics of NbN HEB mixer were performed at the frequency 28.4 THz (λ = 10.6 µm) by using gas-discharge CW CO2-laser without consideration of optical and electrical losses in the heterodyne receiver. The noise temperature of NbN HEB mixer with the size of the sensitive element 10 µm × 10 µm was 2320 K (~ 1.5hν/kB) at the heterodyne frequency of 28.4 THz. The noise temperature was determined by measuring the Y-factor taking into account the term which describes fluctuations of zero-point oscillations in accordance with the fluctuation-dissipation theorem of Calle-Welton. Isothermal method was used to estimate the absorbed heterodyne radiation power which was 9 µW at the optimal operating point for the minimum noise temperature of NbN HEB mixer.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1684-1719	ISBN		Medium
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	Notes	http://jre.cplire.ru/jre/oct17/9/abstract.html (Russian) Гетеродинный приемник со сверхпроводниковым смесителем на эффекте электронного разогрева для среднего инфракрасного диапазона			Approved	no
	Call Number				Serial	1747
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	Author	Averkin, A. S.; Shishkin, A. G.; Chichkov, V. I.; Voronov, B. M.; Goltsman, G. N.; Karpov, A.; Ustinov, A. V.
	Title	Tunable frequency-selective surface based on superconducting split-ring resonators			Type	Conference Article
	Year	2014	Publication	8th Metamaterials	Abbreviated Journal	8th Metamaterials
	Volume		Issue		Pages
	Keywords	superconducting split-ring resonators
	Abstract	We study a possibility to use the 2D superconducting metamaterial as a tunable frequency-selective surface (FSS). The proposed FSS is made of sub-wavelength size (l/14) metamaterial unit cells, where a split-ring resonator is embedded in a small iris aperture in a metal plane. The split-ring resonator is made of NbN film, and its resonance frequency is tuned by the temperature of the sample, changing the kinetic inductance of NbN film. The Ansoft HFSS simulation predicts the FSS tuning range of about 10-20 %. The developed superconducting FSS may be used as a tunable band-pass filter or modulator.
	Address	Copenhagen, Denmark
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Area		Expedition		Conference	8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics – Metamaterials
	Notes				Approved	no
	Call Number				Serial	1749
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	Author	Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, Roman; Korneev, A.; Kouminov, P.; Okunev, O.; Chulkova, G.; Gol'tsman, G.
	Title	Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range			Type	Miscellaneous
	Year	2004	Publication	ResearchGate	Abbreviated Journal	ResearchGate
	Volume		Issue		Pages
	Keywords	NbN SSPD, SNSPD
	Abstract	We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices.
	Address
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	Language		Summary Language		Original Title
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	Notes	Not attributed to any publisher! File name: PR9VervekinSfin_f.doc; Author: JAOLEARY; Last modification date: 2004-02-26			Approved	no
	Call Number				Serial	1751
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	Author	Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б.
	Title	Механизм преобразования частоты в n-InSb-смесителе			Type	Journal Article
	Year	1991	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	25	Issue	11	Pages	1986-1998
	Keywords	n-InSb mixer
	Abstract	Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1753
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	Author	Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.; Гусинский, Э. Н.; Литвак-Горская, Л. Б.
	Title	Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла			Type	Journal Article
	Year	1990	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	24	Issue	12	Pages	2145-2150
	Keywords	Hall constant, concentration of impurities, p-Si
	Abstract	На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая.
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	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
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	Notes				Approved	no
	Call Number				Serial	1754
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	Author	Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г.
	Title	Влияние магнитного поля на захват свободных носителей мелкими примесями в Ge			Type	Journal Article
	Year	1990	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	24	Issue	10	Pages	1881-1883
	Keywords	impurities, photoconductivity, Ge, capture of free carriers, magnetic field
	Abstract	Цель настоящей работы — измерение кинетики примесной фотопроводимости в квантующих магнитных полях.
	Address
	Corporate Author				Thesis
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	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
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	Notes				Approved	no
	Call Number				Serial	1755
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	Author	Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б.
	Title	Кинетические явления в компенсированном n-InSb при низких температурах			Type	Journal Article
	Year	1990	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	24	Issue	1	Pages	3-24
	Keywords	compensated n-InSb, impurities
	Abstract	Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb.
	Address
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	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
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	Notes				Approved	no
	Call Number				Serial	1756
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	Author	Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.
	Title	Особенности температурной зависимости холловской подвижности в легированных и некомпенсированных полупроводниках			Type	Journal Article
	Year	1989	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	23	Issue	2	Pages	338-345
	Keywords	weakly compensated Si, Ge, doped, Hall mobility
	Abstract	На примере легированного и слабо компенсированного Si⟨B⟩ проведены исследования особенностей температурной зависимости подвижности при различных механизмах рассеяния. Уточнен метод определения концентрации компенсирующей примеси по μI(T). Полученные результаты обсуждаются и для Ge.
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	Notes				Approved	no
	Call Number				Serial	1758
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	Author	Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З.
	Title	Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩			Type	Journal Article
	Year	1986	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	20	Issue	1	Pages	99-103
	Keywords	n-Ge, Hubbard upper zone conductivity, negative magnetoresistance
	Abstract	В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph.
	Address
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	Notes				Approved	no
	Call Number				Serial	1759
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	Author	Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С.
	Title	Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца			Type	Journal Article
	Year	1985	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	19	Issue	9	Pages	1696-1698
	Keywords	uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
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	Notes				Approved	no
	Call Number				Serial	1760
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	Author	Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С.
	Title	О механизме динамического сужения линии ЭПР доноров фосфора в кремнии			Type	Journal Article
	Year	1984	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	18	Issue	3	Pages	421-425
	Keywords	Si, phosphorus donors, EPR
	Abstract	Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам.
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	Notes				Approved	no
	Call Number				Serial	1761
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	Author	Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.
	Title	Об одном способе определения концентрации глубоких примесей в германии			Type	Journal Article
	Year	1983	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	17	Issue	10	Pages	1896-1898
	Keywords	Ge, deep impurities
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1762
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	Author	Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И.
	Title	Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда			Type	Journal Article
	Year	1983	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	17	Issue	10	Pages	1873-1876
	Keywords	compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1763
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	Author	Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б.
	Title	О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси			Type	Journal Article
	Year	1983	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	17	Issue	3	Pages	499-501
	Keywords	shallow neutral impurities, capture, inverse distribution function, Si
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1764
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	Author	Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G.
	Title	Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons			Type	Journal Article
	Year	1975	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	40	Issue	2	Pages	311-315
	Keywords	Ge, cyclotron resonance
	Abstract	Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1768
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	Author	Goltsman, Gregory N.
	Title	Development and applications of terahertz hot electron bolometers			Type	Abstract
	Year	2021	Publication	1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments	Abbreviated Journal	1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments
	Volume		Issue		Pages
	Keywords
	Abstract	The development of techniques and technologies for the deposition of ultrathin superconducting films, the creation of superconducting structures on a nanometer scale is the basis of significant progress in the field of superconducting receiving systems. Ultrathin NbN films are the basis for a wide range of record-breaking hot electron devices: direct and heterodyne terahertz detectors. Terahertz receivers are especially in demand in high-resolution spectroscopy for astronomical, atmospheric, and medical research. HEB receivers are widely used in terahertz radio astronomy. For example, the Dutch SRON Institute is preparing a project for the GUSTO hot air balloon telescope with a HEB mixer array at 1.4 THz and 1.9 THz. A 5-meter Chinese terahertz telescope DATE5 with HEB mixers at 1.4 THz is installed at the South Pole. The Stratospheric Observatory (SOFIA) uses HEB mixer matrices in the GREAT instrument operating in the 1.2 – 4.7 THz range. It is planned to implement the international project Origins Space Telescope (OST) in the far infrared region based on HEB receivers. The Japanese project Smiles-2 will allow measurements at 1.8 THz in the upper layers of the stratosphere and mesosphere. The development of the Millimetron space observatory continues in Russia.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	First Moscow International Conference on Submillimeter and Millimeter Astronomy: Objectives and Instruments, Astro Space Center, Moscow, 12-16 April 2021, id. 2
	Notes	Downloaded from https://millimetron.ru/conference_2021/Goltsman.pdf; Author: Sergey; Last modification: 2021-04-14			Approved	no
	Call Number				Serial	1771
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	Author	Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G.
	Title	Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions			Type	Journal Article
	Year	1976	Publication	Presumably: Sov. Phys. Semicond. \| Физика и техника полупроводников	Abbreviated Journal	Presumably: Sov. Phys. Semicond. \| Физика и техника полупроводников
	Volume	10	Issue		Pages	1379-1383
	Keywords	Ge, cyclotron resonance, charged impurities,
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1772
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	Author	Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G.
	Title	Absorption spectra in electron transitions between excited states of impurities in germanium			Type	Journal Article
	Year	1975	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	22	Issue	4	Pages	95-97
	Keywords	Ge, impurities, excited states, absorption spectra
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1773
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	Author	Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G.
	Title	Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields			Type	Journal Article
	Year	1972	Publication	Presumably: Sov. Phys. Semicond. \| Физика и техника полупроводников	Abbreviated Journal	Presumably: Sov. Phys. Semicond. \| Физика и техника полупроводников
	Volume	6	Issue		Pages	362-363
	Keywords	Ge, cyclotron resonance, quantizing magnetic fields
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1774
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	Author	Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V.
	Title	Development of disordered ultra-thin superconducting vanadium nitride films			Type	Conference Article
	Year	2019	Publication	Proc. 8th Int. Conf. Photonics and Information Optics	Abbreviated Journal	Proc. 8th Int. Conf. Photonics and Information Optics
	Volume		Issue		Pages	425-426
	Keywords	VN films
	Abstract	We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-7262-2536-4	Medium
	Area		Expedition		Conference
	Notes	http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf			Approved	no
	Call Number				Serial	1802
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	Author	Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.
	Title	Characterization of topologies of superconducting photon number resolving detectors			Type	Conference Article
	Year	2019	Publication	Proc. 8th Int. Conf. Photonics and Information Optics	Abbreviated Journal	Proc. 8th Int. Conf. Photonics and Information Optics
	Volume		Issue		Pages	465-466
	Keywords	PNR SSPD
	Abstract	Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-7262-2536-4	Medium
	Area		Expedition		Conference
	Notes	http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf			Approved	no
	Call Number				Serial	1803
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	Author	Мошкова, М. А.; Дивочий, А. В.; Морозов, П. В.; Антипов, А. В.; Вахтомин, Ю. Б.; Смирнов, К. В.
	Title	Оценка статистики распределения фотонов с использованием многоэлементного сверхпроводникового однофотонного детектора			Type	Conference Article
	Year	2019	Publication	Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского	Abbreviated Journal
	Volume		Issue		Pages	201-202
	Keywords	SSPD
	Abstract	Проведен сравнительный анализ топологий сверхпроводниковых однофотонных детекторов с способностью к разрешению до четырёх фотонов в коротком импульсе ИК излучения. Получен детектор, с системной квантовой эффективностью ~85% на λ=1550 нм. Продемонстрирована возможность его использования для распределения числа фотонов импульсного источника излучения.
	Address	Москва
	Corporate Author				Thesis
	Publisher	МИЭМ НИУ ВШЭ	Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1804
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	Author	Золотов, Ф. И.; Смирнов, К. В.
	Title	Особенности осаждения разупорядоченных сверхтонких плёнок нитрида ванадия			Type	Conference Article
	Year	2019	Publication	Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского	Abbreviated Journal
	Volume		Issue		Pages	204-205
	Keywords	VN films
	Abstract	В работе изучены особенности роста сверхтонких плёнок нитрида ванадия толщиной ~10 нм. Обнаружено, что при изменении температуры подложки и общего давления газов в процессе осаждения плёнок меняется значение их поверхностного сопротивления вблизи перехода к сверхпроводящему состоянию.
	Address	Москва
	Corporate Author				Thesis
	Publisher	МИЭМ НИУ ВШЭ	Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1805
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	Author	Райтович, А. А.; Пентин, И. В.; Золотов, Ф. И.; Селезнев, В. А.; Вахтомин, Ю. Б.; Смирнов, К. В.
	Title	Время энергетической релаксации электронов в сверхпроводниковых VN наноструктурах			Type	Conference Article
	Year	2018	Publication	Сборник трудов 13 Всероссийской конференции молодых ученых	Abbreviated Journal
	Volume		Issue		Pages	236-238
	Keywords	VN films
	Abstract
	Address	Саратовский филиал ИРЭ им. В.А. Котельникова РАН
	Corporate Author				Thesis
	Publisher	Техно-Декор	Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Наноэлектроника, нанофотоника и нелинейная физика
	Notes	http://nnnph.ru/data/documents/Sborni-trudov-NNNF-2018.pdf			Approved	no
	Call Number				Serial	1807
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	Author	Zolotov, P. I.; Vakhtomin, Yu. B.; Divochiy, A. V.; Seleznev, V. A.; Smirnov, K. V.
	Title	Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons			Type	Journal Article
	Year	2016	Publication	Proc. 5th Int. Conf. Photonics and Information Optics	Abbreviated Journal	Proc. 5th Int. Conf. Photonics and Information Optics
	Volume		Issue		Pages	115-116
	Keywords	NbN SSPD
	Abstract	This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-7262-2215-8	Medium
	Area		Expedition		Conference
	Notes	http://fioconf.mephi.ru/files/2015/12/FIO2016-Sbornik.pdf Разработка технологии создания резонаторных структур для увеличения квантовой эффективности NBN детекторов ИК-фотонов			Approved	no
	Call Number				Serial	1811
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	Author	Корнеев, А. А.; Окунев, О. В.; Чулкова, Г. М.; Смирнов, К. В.; Милостная, И. И.; Минаева, О. В.; Корнеева, Ю. П.; Каурова, Н. С.; Воронов, Б. М.; Гольцман, Г. Н.
	Title	Спонтанные и фотоиндуцированные резистивные состояния в узких сверхпроводящих NbN полосках			Type	Book Whole
	Year	2015	Publication		Abbreviated Journal
	Volume		Issue		Pages
	Keywords	NbN films
	Abstract	Монография посвящена актуальной проблеме современной фотоники: разработке высокочувствительных и быстродействующих сверхпроводниковых однофотонных детекторов на основе тонкой пленки NbN. В работе исследуются неравновесные процессы, протекающие в тонкой сверхпроводящей пленке после поглощения инфракрасного фотона и приводящие к возникновению резистивного состояния. На этих процессах основан механизм фотоотклика исследуемого в работе однофотонного детектора. В частности, исследуются зависимости квантовой эффективности и скорости темнового счета от геометрических параметров детектора: толщины пленки, ширины полоски, а также от величины транспортного тока детектора. Монография предназначена для студентов старших курсов, аспирантов и начинающих исследователей, работающих в области сверхпроводниковой наноэлектроники и радиофизики.
	Address	Москва
	Corporate Author				Thesis
	Publisher	МПГУ	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-4263-0269-3	Medium
	Area		Expedition		Conference
	Notes	УДК: 535; Число страниц: 108			Approved	no
	Call Number				Serial	1812
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	Author	Smirnov, K.; Vachtomin, Y.; Divochiy, A.; Antipov, A.; Goltsman, G.
	Title	The limitation of noise equivalent power by background radiation for infrared superconducting single photon detectors coupled to standard single mode optical fibers			Type	Journal Article
	Year	2015	Publication	Rus. J. Radio Electron.	Abbreviated Journal	Rus. J. Radio Electron.
	Volume		Issue	5	Pages
	Keywords	NbN SSPD
	Abstract	We investigated the minimum level of the dark count rates and noise equivalent power of superconducting single photon detectors coupled to standard single mode optical fibers. We found that background radiation limits the minimum level of the dark count rates. We also proposed the effective method for reducing background radiation out of the required spectral range of the detector. Measured noise equivalent power of detector reaches 8.9×10-19 W×Hz1/2 at a wavelength of 1.55 μm and quantum efficiency 35%.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	14 pages			Approved	no
	Call Number				Serial	1813
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	Author	Смирнов, Константин Владимирович; Чулкова, Галина Меркурьевна; Вахтомин, Юрий Борисович; Корнеев, Александр Александрович; Окунев, Олег Валерьевич; Дивочий, Александр Валерьевич; Семенов, Александр Владимирович; Гольцман, Григорий Наумович
	Title	Особенности разогрева и релаксации горячих электронов О-754 в тонкопленочных cверхпроводниковых наноструктурах и 2D полупроводниковых гетероструктурах при поглощении излучения инфракрасного и терагерцового диапазонов			Type	Book Whole
	Year	2014	Publication		Abbreviated Journal
	Volume		Issue		Pages
	Keywords	2DEG
	Abstract	В монографии рассмотрены основные особенности эффекта электронного разогрева в тонких сверхпроводниковых пленках и полупроводниковых гетеропереходах, возникающего при поглощении носителями заряда излучений терагерцового и инфракрасного диапазонов. Значительная часть монографии посвящена представлению современных достижений при использовании указанного эффекта для создания приемных устройств с рекордными характеристиками: терагерцовых гетеродинных и болометрических приемников на основе сверхпроводниковых и полупроводниковых структур; сверхпроводниковых приемников одиночных ИК фотонов. В работе также подробно рассмотрены основы современной сверхпроводниковой тонкопленочной технологии. Монография может быть полезна студентам старших курсов, аспирантам и начинающим исследователям, работающим в области физики твердого тела, оптики, радиофизики.
	Address	Москва
	Corporate Author				Thesis
	Publisher	МПГУ	Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-4263-0145-0	Medium
	Area		Expedition		Conference
	Notes	240 страниц			Approved	no
	Call Number				Serial	1814
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	Author	Гольцман, Григорий Наумович; Корнеев, Александр Александрович; Антипов, Андрей Владимирович; Минаева, Ольга Вячеславовна; Дивочий, Александр Валерьевич; Антипов, Сергей Владимирович; Вахтомин, Юрий Борисович; Смирнов, Константин Владимирович
	Title	Способ фильтрации фонового излучения инфракрасного диапазона			Type	Patent
	Year	2014	Publication		Abbreviated Journal
	Volume		Issue	RU 2510056 C1	Pages
	Keywords
	Abstract	Изобретение относится к способам уменьшения интенсивности фонового излучения инфракрасного диапазона. Способ фильтрации фонового излучения инфракрасного диапазона, падающего на сверхпроводниковый однофотонный детектор, включает передачу излучения инфракрасного диапазона с длиной волны 0,4-1,8 микрометров на сверхпроводниковый однофотонный детектор при помощи одномодового волокна, частично находящегося при температуре 4,0-4,4 К. При этом длина охлаждаемого участка одномодового волокна составляет 0,2-3,5 м. Технический результат заключается в повышении надежности работы фотонных детекторов. 2 з.п. ф-лы.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1815
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	Author	Антипов, Андрей Владимирович; Дивочий, Александр Валерьевич; Вахтомин, Юрий Борисович; Финкель, Матвей Ильич; Смирнов, Константин Владимирович
	Title	Способ прецизионного позиционирования чувствительного элемента фотонного детектора			Type	Patent
	Year	2014	Publication		Abbreviated Journal
	Volume		Issue	RU 2506664 C1	Pages
	Keywords
	Abstract	Изобретение относится к способам, позволяющим производить совмещение фотонных детекторов относительно оптического излучения. Способ прецизионного позиционирования чувствительного элемента фотонного детектора относительно амплитудно-модулированного оптического излучения включает смещение чувствительного элемента фотонного детектора постоянным током с последующей регистрацией электрического сигнала, возникающего на контактах детектора на частоте модуляции излучения. Полученный при этом сигнал используют как параметр, определяющий качество позиционирования. Обеспечивается повышение технико-эксплуатационных характеристик детектора.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1816
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	Author	Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В.
	Title	Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе			Type	Book Whole
	Year	2012	Publication		Abbreviated Journal
	Volume		Issue		Pages
	Keywords	2DEG, AlGaAs/GaAs, NbN detectors
	Abstract	Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники.
	Address	Москва
	Corporate Author				Thesis
	Publisher	Прометей, МПГУ	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-4263-0118-4	Medium
	Area		Expedition		Conference
	Notes	УДК: 537.311			Approved	no
	Call Number				Serial	1818
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	Author	Семенов, А. В.; Корнеев, А. А.; Лобанов, Ю. В.; Корнеева, Ю. П.; Рябчун, С. А.; Лаврова, О. С.; Третьяков, И. В.; Флоря, И. Н.; Силаев, М. А.; Кинев, Н. В.; Ковалюк, В. В.; Смирнов, К. В.; Гольцман, Г. Н.
	Title	Поляризация электромагнитной волны вблизи фокуса зеркала и системы зеркал в субтерагерцовом диапазоне частот			Type	Journal Article
	Year	2012	Publication	Современные проблемы науки и образования	Abbreviated Journal
	Volume		Issue	2	Pages
	Keywords	sub-terahertz radio telescope
	Abstract	Рассмотрено влияние оптической системы телескопа на поляризацию принимаемого электромагнитного сигнала. Описано изменение поляризации луча при отражении от произвольно ориентированной поверхности зеркала. Учтены искажения поляризации, обусловленные как отклонением лучей от первоначального направления, так и различием в коэффициентах отражения для разных поляризаций в случае неидеального отражения. В рамках метода Френеля получены оценочные формулы, дающие отношение амплитуд поля с исходной поляризацией и с поляризацией, перпендикулярной исходной, вблизи фокальной точки оптической системы. Формулы выведены для нескольких практически важных случаев, в том числе для параболического зеркала и системы двух зеркал. Оценена верхняя граница поляризационных искажений в пределах кружка Эйри. Полученные оценки согласуются с результатами численного расчёта для двухзеркального радиотелескопа субтерагерцового диапазона.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	9 страниц; УДК 535-47			Approved	no
	Call Number				Serial	1819
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	Author	Казаков, А. Ю.; Селиверстов, С. В.; Дивочий, А. В.; Смирнов, К. В.; Финкель, М. И.; Вахтомин, Ю. Б.
	Title	Возможность применения сверхпроводниковых материалов в качестве отражающего покрытия зеркала телескопа, предназначенного для наблюдений анизотропии реликтового излучения			Type	Journal Article
	Year	2012	Publication	Преподаватель ХХI век	Abbreviated Journal
	Volume		Issue	3	Pages	221-224
	Keywords	submillimeter radio telescope
	Abstract	В статье исследуется возможность использования сверхпроводящего материала в качестве отражающего слоя зеркала субмиллиметрового телескопа, охлажденного до криогенных температур и предназначенного для наблюдений реликтового излучения. Для нескольких сверхпроводниковых материалов вычислен диапазон частот, в котором флуктуации теплового излучения покрытия меньше флуктуаций источника. Показана перспективность применения покрытия из Nb3Ge.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1820
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	Author	Семенов, А. В.; Корнеев, А. А.; Лобанов, Ю. В.; Корнеева, Ю. П.; Рябчун, С. А.; Третьяков, И. В.; Флоря, И. Н.; Смирнов, А. В.; Ковалюк, В. В.; Смирнов, К. В.; Гольцман, Г. Н.
	Title	Оценка поляризационных искажений, вносимых оптической системой радиотелескопа миллиметрового диапазона			Type	Journal Article
	Year	2012	Publication	Преподаватель ХХI век	Abbreviated Journal
	Volume		Issue	4	Pages	230-236
	Keywords	millimeter radio telescope
	Abstract	В статье рассмотрена поляризация электромагнитного поля вблизи фокальной точки телескопической системы. Оценена верхняя граница поляризационных искажений, вносимых отражающими поверхностями, в том числе с учетом неидеальности отражения.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1821
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	Author	Семенов, А. В.; Корнеев, А. А.; Смирнов, А. В.; Смирнов, К. В.; Ожегов, Р. В.; Окунев, О. В.; Гольцман, Г. Н.; Девятов, И. А.
	Title	Линейные по мощности поглощаемого излучения поправки к спектральным функциям «грязного» сверхпроводника и отклик сверхпроводниковых детекторов			Type	Journal Article
	Year	2012	Publication	Преподаватель ХХI век	Abbreviated Journal
	Volume		Issue	3	Pages	216-220
	Keywords	dirty superconductor film
	Abstract	В статье развит метод расчета малых поправок к спектральным функциям пленки «грязного» сверхпроводника, возникающих под действием поглощаемой мощности электромагнитного излучения. Метод пригоден в случае спектральных функций произвольного вида, что позволяет применять его для расчета отклика сверхпроводниковых детекторов излучения различного типа.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1822
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	Author	Корнеева, Ю. П.; Трифонов, А. В.; Вахтомин, Ю. Б.; Смирнов, К. В.; Корнеев, А. А.; Рябчун, С. А.; Третьяков, И. В.; Гольцман, Г. Н.
	Title	Расчет согласующего оптического резонатора для сверхпроводникового нанополоскового детектора			Type	Journal Article
	Year	2012	Publication	Преподаватель ХХI век	Abbreviated Journal
	Volume		Issue	3	Pages	225-227
	Keywords	SSPD, SNSPD
	Abstract	В статье произведен расчет резонатора, предназначенного для согласования сверхпроводникового нанополоскового однофотонного детектора с оптическим сигналом. Показано, что для детектора, выполненного из пленки с типичным сопротивлением квадрата 500 Ом и коэффициентом заполнения 0.5 коэффициент согласования с излучением, поляризованным параллельно полоскам детектора, достигает величины около 60%.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1823
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	Author	Semenov, A. V.; Devyatov, I. A.; Korneev, A. A.; Smirnov, K. V.; Goltsman, G. N.; Melnikov, A. P.
	Title	Derivation of expression for thermodynamic potential of “dirty” superconductor			Type	Journal Article
	Year	2012	Publication	Rus. J. Radio Electron.	Abbreviated Journal	Rus. J. Radio Electron.
	Volume		Issue	4	Pages
	Keywords	dirty superconductor, Usadel theory, thermodynamic potential
	Abstract	We derive a formula for thermodynamic potential of dirty superconductor which express it via isotropic quasiclassical Green functions of Usadel theory. Our result allows unify description of dynamic processes and fluctuations in superconducting nano-electronic devices.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	7 pages			Approved	no
	Call Number				Serial	1824
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	Author	Смирнов, А. В.; Карманцов, М. С.; Смирнов, К. В.; Вахтомин, Ю. Б.; Мастеров, Д. В.; Тархов, М. А.; Павлов, С. А.; Парафин, А. Е.
	Title	Терагерцовый отклик болометров на основе тонких пленок YBCO			Type	Journal Article
	Year	2012	Publication	ЖТФ	Abbreviated Journal	ЖТФ
	Volume	82	Issue	12	Pages	108-111
	Keywords	YBCO HEB NEP
	Abstract	Представлены первые результаты измерения болометрического отклика высокотемпературных сверхпроводниковых детекторов на основе тонких пленок YBCO на электромагнитное излучение с частотой 2.5 THz. Минимальное значение оптической мощности, эквивалентной шуму созданных детекторов, составило 3.5· 10-9 W/sqrt(Hz)sqrt. Обсуждена возможность дальнейшего увеличения чувствительности исследуемых детекторов.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1825
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	Author	Чулкова, Галина Меркурьевна; Семёнов, Александр Владимирович; Тархов, Михаил Александрович; Гольцман, Григорий Наумович; Корнеев, Александр Александрович; Смирнов, Константин Владимирович
	Title	О возможности использования PNR-SNPD в системах телекоммуникационной связи			Type	Journal Article
	Year	2012	Publication	Преподаватель ХХI век	Abbreviated Journal
	Volume		Issue	2	Pages	244-246
	Keywords	PNR SSPD, SNSPD, SNPD
	Abstract	Рассмотрена возможность применения сверхпроводникового нанополоскового детектора, разрешающего число фотонов (Photon-Number Resolving Superconducting Nanowire Photon Detector, PNR-SNPD), в качестве датчика приёмных модулей телекоммуникационных линий. Оценена мощность оптического импульса, необходимая для достижения приемлемо низкой доли ошибочных битов.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1826
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	Author	Korneeva, Yu. P.; Trifonov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.
	Title	Design of resonator for superconducting single-photon detector			Type	Journal Article
	Year	2011	Publication	Rus. J. Radio Electron.	Abbreviated Journal	Rus. J. Radio Electron.
	Volume		Issue	12	Pages
	Keywords	SSPD optical resonator, SNSPD
	Abstract	A resonator for superconducting single-photon detector is designed. Near 60% coupling with a radiation propagating from a dielectric substrate of optical fiber is demonstrated to be achieved for typical values of the detector’s film sheet resistance.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	6 pages			Approved	no
	Call Number				Serial	1827
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	Author	Hübers, H.-W.; Semenov, A.; Richter, H.; Birk, Manfred; Krocka, Michael; Mair, Ulrich; Smirnov, K.; Gol'tsman, G.; Voronov, B.
	Title	Terahertz heterodyne receiver with a hot-electron bolometer mixer			Type	Conference Article
	Year	2002	Publication	Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop	Abbreviated Journal	Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop
	Volume		Issue		Pages
	Keywords	NbN HEB mixers
	Abstract	During the past decade major advances have been made regarding low noise mixers for terahertz (THz) heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a µW power from the local oscillator (LO). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, are of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated the performance of the receiver. This yields important information for the development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA)[1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR.
	Address	Monterey, CA, USA
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	Wold, J.; Davidson, J.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	4 pages; Unconfirmed but cited in https://kups.ub.uni-koeln.de/1622/1/bedorf.pdf; There is a Program of the Workshop: https://www.yumpu.com/en/document/view/7411055/far-ir-submm-mm-detector-technology-workshop-sofia-usra (there is no title of this article in the Program); There is also identical publication in Proc. ISSTT (Serial: 332, “A broadband terahertz heterodyne receiver with an NbN HEB mixer”).			Approved	no
	Call Number				Serial	1829
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	Author	Смирнов, Константин Владимирович
	Title	Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе			Type	Manuscript
	Year	2000	Publication	М. МПГУ	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	2DEG, AlGaAs/GaAs heterostructures, NbN films
	Abstract	Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств.
	Address	Москва, МПГУ
	Corporate Author				Thesis	Ph.D. thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1830
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	Author	Гольцман, Г. Н.; Веревкин, А. А.; Гершензон, Е. М.; Птицина, Н. Г.; Смирнов, К. В.; Чулкова, Г. М.
	Title	Исследования процессов неупругой релаксации и примесная спектроскопия-релаксометрия в двумерном электронном газе в полупроводниковых структурах с квантовыми ямами			Type	Report
	Year	1995	Publication		Abbreviated Journal
	Volume		Issue		Pages
	Keywords
	Abstract	В гетероструктурах GaAs/AlGaAs впервые прямым методом измерена температурная зависимость вpемени энеpгетической pелаксации двумерного электронного газа te(T) в широком диапазоне температур Т=1,5 – 50 К в квазиравновесных условиях. Для измерений использовался высокочувствительный спектрометр миллиметрового диапазона волн с высоким временным разрешением, который позволял измерять релаксационные времена до 150 пс с погрешностью не более 20%. Верхний предел температуры определялся временным разрешением спектрометра. Исследования проводились на высококачественных образцах с поверхностной концентрацией носителей ns = 4,2 1011 см-2 и подвижностью m = 7 105 см2В-1с-1 (при Т = 4,2К). В квазиравновесных условиях из температурной зависимости tе определен предел подвижности при низких температурах (T<4.2 K), связанный с рассеянием на пьезоакустическом потенциале, получено время неупругой релаксации, связанное с рассеянием на деформационном потенциале (15 K25 K), получено характерное время испускания оптического фонона (tLO>4,5пс), которое существенно превышает время сронтанного излучения оптического фонона (примерно в 30 раз), что связано с большой ролью процессов перепоглащения фононов электронами.При низких температурах проведены измерения tе в условиях сильного разогрева. Полученные значения tе и зависимость tе от температуры электронов Те совпадают с tе(Т) в квазиравновесных условиях при Т=Те. Из полученных значений tе(Те) построена зависимость мощности энергетических потерь от Те, которая хорошо согласуется с литературными данными.Начаты измерения в магнитном поле, которые показывают переспективность использованного нами метода измерений как в области слабых магнитных полей при факторе заполнения >10, так и в области сильных магнитных полей при факторе заполнения >1-2.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Отчет о НИР/НИОКР; РФФИ: 95-02-06409-а;			Approved	no
	Call Number				Serial	1831
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	Author	Гольцман, Г. Н.; Смирнов, К. В.
	Title	По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах			Type	Journal Article
	Year	2001	Publication	Письма в ЖЭТФ	Abbreviated Journal	Письма в ЖЭТФ
	Volume	74	Issue	9	Pages	532-538
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	Рассмотрены теоретические и экспериментальные работы, посвященные изучению электрон-фононного взаимодействия в двумерном электронном газе полупроводниковых гетероструктур при низких температурах в случае сильного разогрева в электрическом поле, в квазиравновесных условиях и в квантующем магнитном поле, перпендикулярном 2D слою.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1541: “Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures”			Approved	no
	Call Number				Serial	1832
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	Author	Селиверстов, С. В.; Финкель, М. И.; Рябчун, С. А.; Воронов, Б. М.; Каурова, Н. С.; Селезнев, В. А.; Смирнов, К. В.; Вахтомин, Ю. Б.; Пентин, И. В.; Гольцман, Г. Н.
	Title	Терагерцевый сверхпроводниковый детектор с аттоджоулевым энергетическим разрешением и постоянной времени 25 пс			Type	Conference Article
	Year	2014	Publication	Труды XVIII международного симпозиума «Нанофизика и наноэлектроника»	Abbreviated Journal
	Volume	1	Issue		Pages	91-92
	Keywords	NbN HEB
	Abstract	Представлены результаты измерения энергетического разрешения терагерцевого сверхпроводникового NbN-детектора на эффектеэлектронного разогрева, работающего при температуре около 10 К. Использование инновационной in situ технологии производства привело к существенному улучшению чувствительности детектора. Увеличение быстродействия детектора было достигнуто за счет реализации дополнительного диффузионного канала охла-ждения электронной подсистемы. Измеренное значение эквивалентной мощности шума на частоте 2.5 ТГц составило 2.0×10-13Вт•Гц-0.5, постоянной времени 25 пс. Соответствующее расчетное значение энергетического разрешения составило 2.5 аДж.
	Address	Нижний Новгород, Россия
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1833
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	Author	Бурмистрова, А. В.; Девятов, И. А.
	Title	Расчет электронного транспорта в гетероструктурах, содержащих многозонные сверхпроводники			Type	Conference Article
	Year	2014	Publication	Труды XVIII международного симпозиума «Нанофизика и наноэлектроника»	Abbreviated Journal
	Volume	1	Issue		Pages	21-22
	Keywords	N/I/Sp junctions
	Abstract	В рамках приближения сильной связи теоретически рассчитаны проводимости контактов вида нормальный металл/изолятор/одноорбитальный сверхпроводник с p-типом сверхпроводящего спаривания (N/I/Sp). Объяснено наблюдаемое экспериментально как появление пика при нулевом напряжении, так и его расщепление в зависимости от толщины слоя изолятора. В рамках этой же микроскопической теории развит вариант техники решеточной функции Грина в мацубаровом представлении. Используя разработанный подход, рассчитаны фазовые и температурные зависимости тока Джозефсона для контакта сверхпроводника s-типа и многозонного железосодержащего сверхпроводника (ферропниктида) для различных ориентаций границы по отношению к кристаллографическим осям пниктида.
	Address	Нижний Новгород, Россия
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1834
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	Author	Кардакова, А. И.; Финкель, М. И.; Морозов, Д. В.; Ковалюк, В. В.; Ан, П. П.; Гольцман, Г. Н.
	Title	Время электрон-фононного взаимодействия в сверхпроводниковых пленках нитрида титана			Type	Conference Article
	Year	2014	Publication	Труды XVIII международного симпозиума «Нанофизика и наноэлектроника»	Abbreviated Journal
	Volume	1	Issue		Pages	47-48
	Keywords	TiN films
	Abstract	Определены времена электрон-фононного взаимодействия в тонких сверхпроводниковых пленках нитрида титана. Измеренные значения τ_eph находятся в диапазоне от 5.5 нс до 88 нс при температурах 4,2 К и 1,7 К, соответственно, и соответствуют температурной зависимости Т^-3.
	Address	Нижний Новгород, Россия
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1835
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	Author	Корнеева, Ю. П.; Михайлов, М. М.; Манова, Н. Н.; Дивочий, А. А.; Корнеев, А. А.; Вахтомин, Ю. Б.; Першин, Ю. П.; Гольцман, Г. Н.
	Title	Сверхпроводниковый однофотонный детектор на основе аморфных пленок MoSi			Type	Conference Article
	Year	2014	Publication	Труды XVIII международного симпозиума «Нанофизика и наноэлектроника»	Abbreviated Journal
	Volume	1	Issue		Pages	53-54
	Keywords	MoSi SSPD
	Abstract	Нами были изготовлены и исследованы однофотонные детекторы на основе сверхпроводящих пленок Mo x Si 1-x двух различных стехиометрий: Mo 3 Si и Mo 4 Si. При температуре 1.7 К лучшие детекторы площадью 7 мкм*7 мкм на основе этих пленок продемонстрировали системную квантовую эффективность 18% при скорости темнового счета 10 с -1 на длине волны 1.2 мкм с использованием неполяризованного источника, длительность импульса – 6 нс, джиттер – 120 пс.
	Address	Нижний Новгород, Россия
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1836
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	Author	Смирнов, К. В.
	Title	AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона			Type	Abstract
	Year	2003	Publication	Тезисы докладов VI Российской конференции по физике полупроводников	Abbreviated Journal
	Volume		Issue		Pages	181
	Keywords	2DEG, AlGaAs/GaAs heterostructures, mixer
	Abstract
	Address	ФТИ им. А. Ф. Иоффе, Санк-Петербург
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	VI Российской конференции по физике полупроводников (27-31 октября)
	Notes	Unconfirmed; Сама конференция, однако, была -- её упоминают: [http://www.nsc.ru/HBC/article.phtml?nid=271&id=17], [https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/lab-20/publikatsii/2003], [http://www.ioffe.ru/sem_tech/sem%5Fteh%5Fmovpe%5Fpublications%5Fru.htm#R2003], [https://istina.ips.ac.ru/collections/828771/]			Approved	no
	Call Number				Serial	1837
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	Author	Tiulina, V.; Iomdina, E.; Goltsman, G.; Seliverstov, S.; Sianosyan, A.; Teplyakova, K.; Rusova, A.; Zaitsev, S.; Zernii, E.; Senin, I.
	Title	UVB promotes the initiation of uveitic inflammatory and changes in thehydration of the cornea in vivo			Type	Miscellaneous
	Year	2019	Publication	FEBS Open Bio	Abbreviated Journal	FEBS Open Bio
	Volume	9	Issue	S1	Pages	79
	Keywords	medicine; scheimpflug imaging; UVB; confocal microscopy; cornea; optical coherent tomography; rabbit eyes; terahertz radiation
	Abstract	Recently, active research has been conducted in the field of terahertz (THz) scanning of human tissues for noninvasive determination of their hydration level, which haves hown high diagnostic efficiency of this technology in various pathological conditions. Recently, we have developed a laboratory model of the facility for monitoring the state of the water balance of the cornea using THz scanning in vivo, which opens up the possibility of applying this approach in ophthalmology. The aim of the work wasto compare the results of the THz scan of the cornea with its clinical changes using the example of an experimental model of the UV induced keratouveitis. Anexperimental study, which included a comprehensive assessment of clinical changes in the cornea of rabbits during keratouveitis induction, revealed a decrease in the stability of the tear film, pathological changes in the corneal epithelium and stroma, as well as its anatomical and optical parameters. Comparison of data obtained in the THz scan of the cornea with tears production, optical coherence tomography and confocal microscopy showed their consistency in all observation periods, which allows us to conclude that the developed laboratory setup works and the feasibility of further research to promote the corneal hydration evaluation technology in clinical practice. Acknowledgements: Research was funded by the RSF, grant number 161500255.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2211-5463	ISBN		Medium
	Area		Expedition		Conference
	Notes	Poster P-01-040			Approved	no
	Call Number				Serial	1276
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	Author	Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I.
	Title	Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation			Type	Journal Article
	Year	2021	Publication	Adv. Electron. Mater.	Abbreviated Journal	Adv. Electron. Mater.
	Volume	7	Issue	3	Pages	2000872
	Keywords	SWCNT transistors
	Abstract	The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2199-160X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1843
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	Author	Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G.
	Title	Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors			Type	Journal Article
	Year	2018	Publication	Phys. Status Solidi B	Abbreviated Journal	Phys. Status Solidi B
	Volume	255	Issue	1	Pages	1700227 (1 to 6)
	Keywords	carbon nanotube schottky diodes, CNT
	Abstract	Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0370-1972	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1321
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	Author	Gol'tsman, G. N.; Korneev, A.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Minaeva, O.; Smirnov, K.; Voronov, B.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.
	Title	Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications			Type	Journal Article
	Year	2005	Publication	Phys. Stat. Sol. (C)	Abbreviated Journal	Phys. Stat. Sol. (C)
	Volume	2	Issue	5	Pages	1480-1488
	Keywords	NbN SSPD, SNSPD
	Abstract	We present our progress on the research and development of NbN superconducting single‐photon detectors (SSPD's) for ultrafast counting of near‐infrared photons for secure quantum communications. Our SSPD's operate in the quantum detection mode based on the photon‐induced hotspot formation and subsequent development of a transient resistive barrier across an ultrathin and submicron‐width superconducting stripe. The devices are fabricated from 4‐nm‐thick NbN films and kept in the 4.2‐ to 2‐K temperature range. The detector experimental quantum efficiency in the photon‐counting mode reaches above 40% for the visible light and up to 30% in the 1.3‐ to 1.55‐µm wavelength range with dark counts below 0.01 per second. The experimental real‐time counting rate is above 2 GHz and is limited by our readout electronics. The SSPD's timing jitter is below 18 ps, and the best‐measured value of the noise‐equivalent power (NEP) is 5 × 10–21 W/Hz1/2 at 1.3 µm. In terms of quantum efficiency, timing jitter, and maximum counting rate, our NbN SSPD's significantly outperform semiconductor avalanche photodiodes and photomultipliers in the 1.3‐ to 1.55‐µm range.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1610-1634	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1479
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	Author	Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Room temperature silicon detector for IR range coated with Ag₂S quantum dots			Type	Journal Article
	Year	2019	Publication	Phys. Status Solidi RRL	Abbreviated Journal	Phys. Status Solidi RRL
	Volume	13	Issue	9	Pages	1900187-(1-6)
	Keywords
	Abstract	For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1862-6254	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1149
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	Author	Semenov, A. D.; Hübers, H.-W.; Gol’tsman, G. N.; Smirnov, K.
	Title	Superconducting quantum detector for astronomy and X-ray spectroscopy			Type	Conference Article
	Year	2002	Publication	Proc. Int. Workshop on Supercond. Nano-Electronics Devices	Abbreviated Journal	Proc. Int. Workshop on Supercond. Nano-Electronics Devices
	Volume		Issue		Pages	201-210
	Keywords	NbN SSPD, SNSPD, SQD, superconducting quantum detectors, X-ray spectroscopy
	Abstract	We propose the novel concept of ultra-sensitive energy-dispersive superconducting quantum detectors prospective for applications in astronomy and X-ray spectroscopy. Depending on the superconducting material and operation conditions, such detector may allow realizing background limited noise equivalent power 10−21 W Hz−1/2 in the terahertz range when exposed to 4-K background radiation or counting of 6-keV photon with almost 10—4 energy resolution. Planar layout and relatively simple technology favor integration of elementary detectors into a detector array.
	Address	Naples, Italy
	Corporate Author				Thesis
	Publisher	Springer	Place of Publication	Boston, MA	Editor	Pekola, J.; Ruggiero, B.; Silvestrini, P.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-1-4615-0737-6	Medium
	Area		Expedition		Conference	International Workshop on Superconducting Nano-Electronics Devices, May 28-June 1, 2001
	Notes				Approved	no
	Call Number	semenov2002superconducting			Serial	1525
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	Author	Fiore, A.; Marsili, F.; Bitauld, D.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G.
	Title	Counting photons using a nanonetwork of superconducting wires			Type	Conference Article
	Year	2009	Publication	Nano-Net	Abbreviated Journal
	Volume		Issue		Pages	120-122
	Keywords	SSPD, SNSPD
	Abstract	We show how the parallel connection of photo-sensitive superconducting nanowires can be used to count the number of photons in an optical pulse, down to the single-photon level. Using this principle we demonstrate photon-number resolving detectors with unprecedented sensitivity and speed at telecommunication wavelengths.
	Address
	Corporate Author				Thesis
	Publisher	Springer Berlin Heidelberg	Place of Publication	Berlin, Heidelberg	Editor	Cheng, M.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	978-3-642-02427-6	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	10.1007/978-3-642-02427-6_20			Serial	1242
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	Author	Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.
	Title	Thermal boundary resistance at YBaCuO film-substrate interface			Type	Conference Article
	Year	1993	Publication	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences	Abbreviated Journal	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
	Volume	112	Issue		Pages	405-406
	Keywords	YBCO films
	Abstract	The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	Meissner, M.; Pohl, R. O.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
	Notes				Approved	no
	Call Number				Serial	1665
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	Author	Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gershenzon, E. M.
	Title	Electron-phonon interaction in thin YBaCuO films and fast detectors			Type	Conference Article
	Year	1993	Publication	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences	Abbreviated Journal	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
	Volume	112	Issue		Pages	184-185
	Keywords	YBCO HTS detectors
	Abstract	The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	Meissner, M.; Pohl, R. O.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
	Notes				Approved	no
	Call Number				Serial	1662
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	Author	Heusinger, M. A.; Nebosis,R. S.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M.
	Title	Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa₂Cu₃O_7-δ thin film			Type	Conference Article
	Year	1993	Publication	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences	Abbreviated Journal	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
	Volume	112	Issue		Pages	193-195
	Keywords	YBCO HTS detectors
	Abstract	We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	Meissner, M.; Pohl, R. O.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
	Notes				Approved	no
	Call Number				Serial	1663
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	Author	Sergeev, A. V.; Livanov, D. V.
	Title	Phonon renormalization of thermoelectric power of high-T_c materials			Type	Conference Article
	Year	1993	Publication	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences	Abbreviated Journal	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
	Volume	112	Issue		Pages	204-205
	Keywords	HTS, YBCO
	Abstract	Renormalization of thermoelectric power due to Nielsen — Taylor effect (interference between electron-phonon and electron- impurity interactions) is used for the explanation of the temperature dependence and sign of the thermopower in high-Tc materials. In the framework of the model the negative sign of TEP of untwinned YBa2Cu3O7−x crystal in a-direction observed by Howson et. al. is connected to the strong hole scattering via O-vacancies in chains.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	Meissner, M.; Pohl, R. O.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
	Notes				Approved	no
	Call Number				Serial	1664
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	Author	Ozhegov, R. V.; Gorshkov, K. N.; Vachtomin, Y. B.; Smirnov, K. V.; Finkel, M. I.; Goltsman, G. N.; Kiselev, O. S.; Kinev, N. V.; Filippenko, L. V.; Koshelets, V. P.
	Title	Terahertz imaging system based on superconducting heterodyne integrated receiver			Type	Conference Article
	Year	2014	Publication	Proc. THz and Security Applications	Abbreviated Journal	Proc. THz and Security Applications
	Volume		Issue		Pages	113-125
	Keywords	SIS mixer, SIR, THz imaging
	Abstract	The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compared to traditional systems. In this project we propose a prototype THz imaging system using an 1 pixel SIR and 2D scanner. At a local oscillator frequency of 500 GHz the best noise equivalent temperature difference (NETD) of the SIR is 10 mK at an integration time of 1 s and a detection bandwidth of 4 GHz. The scanner consists of two rotating flat mirrors placed in front of the antenna consisting of a spherical primary reflector and an aspherical secondary reflector. The diameter of the primary reflector is 0.3 m. The operating frequency of the imaging system is 600 GHz, the frame rate is 0.1 FPS, the scanning area is 0.5 × 0.5 m2, the image resolution is 50 × 50 pixels, the distance from an object to the scanner was 3 m. We have obtained THz images with a spatial resolution of 8 mm and a NETD of less than 2 K.
	Address
	Corporate Author				Thesis
	Publisher	Springer Netherlands	Place of Publication	Dordrecht	Editor	Corsi, C.; Sizov, F.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	978-94-017-8828-1	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1368
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	Author	Lang, P. T.; Leipold, I.; Knott, W. J.; Semenov, A. D.; Gol'tsman, G. N.; Renk, K. F.
	Title	New far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser			Type	Journal Article
	Year	1991	Publication	Appl. Phys. B	Abbreviated Journal	Appl. Phys. B
	Volume	53	Issue	4	Pages	207-212
	Keywords	CO2 IR lasers, applications, CH3Cl, CH3Br
	Abstract	In this paper we report on the detection of new far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser. We found 80 new lines for CH3Cl and 9 new lines for CH3Br in the frequency region between 16 cm−1 and 41 cm−1, all due to stimulated Raman scattering. For the Raman gain regions bandwidths up to about 700 MHz were found. We also observed high intensity short far-infrared laser pulses of durations in the nanosecond regime.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0721-7269	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1678
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	Author	Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M.
	Title	Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses			Type	Journal Article
	Year	1994	Publication	J. Supercond.	Abbreviated Journal	J. Supercond.
	Volume	7	Issue	4	Pages	751-755
	Keywords	YBCO HTS detector, nonequilibrium response
	Abstract	The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0896-1107	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1636
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	Author	Sergeev, A.; Semenov, A.; Trifonov, V.; Karasik, B.; Gol'tsman, G.; Gershenzon, E.
	Title	Heat transfer in YBaCuO thin film/sapphire substrate system			Type	Journal Article
	Year	1994	Publication	J. Supercond.	Abbreviated Journal	J. Supercond.
	Volume	7	Issue	2	Pages	341-344
	Keywords	YBCO films
	Abstract	The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0896-1107	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1647
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	Author	Zorin, M.; Lindgren, M.; Danerud, M.; Karasik, B.; Winkler, D.; Gol'tsman, G.; Gershenzon, E.
	Title	Nonequilibrium and bolometric responses of YBaCuO thin films to high-frequency modulated laser radiation			Type	Journal Article
	Year	1995	Publication	J. Supercond.	Abbreviated Journal	J. Supercond.
	Volume	8	Issue	1	Pages	11-15
	Keywords	YBCO HTS HEB
	Abstract	Picosecond nonequilibrium and slow bolometric responses to infrared radiation from a patterned high-T c superconducting (HTS) film in resistive and normal states deposited onto LaAlO3, NdGaO3, and MgO substrates were investigated using both pulse and modulation techniques. The response time of 35 ps to a laser pulse of 17 ps FWHM has been observed. The intrinsic response time of the fast process is expected to be about a few picoseconds. The modulation technique, being free from the disadvantages of pulse methods (poor sensitivity, limited dynamic range), makes the detailed study of a number of relaxation processes possible. Besides the nonequilibrium response, two kinds of bolometric processes, namely phonon transport through the film-substrate interface and phonon thermal diffusion in a substrate, manifest themselves in certain frequency dependences.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0896-1107	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1630
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	Author	Lang, P. T.; Knott, W. J.; Leipold, I.; Renk, K. F.; Semenov, A. D.; Gol'tsman, G. N.
	Title	Generation and detection of tunable ultrashort infrared and far-infrared radiation pulses of high intensity			Type	Journal Article
	Year	1992	Publication	Int. J. of Infrared and Millimeter Waves	Abbreviated Journal	Int. J. of Infrared and Millimeter Waves
	Volume	13	Issue	3	Pages	373-380
	Keywords	CO2 IR lasers, FIR
	Abstract	We report on generation and detection of intense pulsed radiation with frequency tunability in the infrared and far-infrared spectral regions. Infrared radiation is generated with a transversally electrically excited high pressure CO2 laser. A laser pulse of a total duration of about 300 ns consisted, due to self mode locking, of a series of single pulses, some with pulse durations of less than 450 ps and peak powers larger than 20 MW. Using these pulses for optical with durations less than 400 ps were obtained. For detection a new ultrafast superconducting detector was used.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0195-9271	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1671
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	Author	Gousev, Y. P.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M.; Semenov, A. D.; Barowski, H. S.; Nebosis, R. S.; Renk, K. F.
	Title	Quasioptical superconducting hot electron bolometer for submillmeter waves			Type	Journal Article
	Year	1996	Publication	Int. J. of Infrared and Millimeter Waves	Abbreviated Journal	Int. J. of Infrared and Millimeter Waves
	Volume	17	Issue	2	Pages	317-331
	Keywords	NbN HEB
	Abstract	We report on a superconducting hot electron bolometer coupled to radiation via a broadband antenna. The bolometer, a structured NbN film, was patterned on a thin dielectric membrane between terminals of a gold slotline antenna. We investigated the response to submillimeter radiation (wave-lengths ∼ 0.1 mm to 0.7 mm) in the fundamental Gaussian mode. We found that the directivity of the antenna was constant within a factor of 2.5 through the whole experimental range. The noise equivalent power of the bolometer at 119 µm was ∼ 3 · 10−13 W/Hz1/2; a time constant of ∼ 160 ps was estimated.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0195-9271	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1618
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	Author	Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V.
	Title	Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films			Type	Conference Article
	Year	1996	Publication	Czech J. Phys.	Abbreviated Journal	Czech J. Phys.
	Volume	46	Issue	S5	Pages	2489-2490
	Keywords	Al, Be, Nb films
	Abstract	The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0011-4626	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1767
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	Author	Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I.
	Title	Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity			Type	Conference Article
	Year	1996	Publication	Czech. J. Phys.	Abbreviated Journal	Czech. J. Phys.
	Volume	46	Issue	S2	Pages	857-858
	Keywords	NbC films
	Abstract	Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0011-4626	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1617
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