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| Author | Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures | Type | Journal Article | ||
| Year | 1989 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 50 | Issue | 5 | Pages | 283-286 |
| Keywords | YBCO HTS films | ||||
| Abstract | The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1690 | |||
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| Author | Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. | ||||
| Title | Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure | Type | Journal Article | ||
| Year | 1989 | Publication | Sov. Phys. and Technics of Semiconductors | Abbreviated Journal | Sov. Phys. and Technics of Semiconductors |
| Volume | 23 | Issue | 8 | Pages | 843-846 |
| Keywords | Ge, crystallography | ||||
| Abstract | Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. | ||||
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| Notes | Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge | Approved | no | ||
| Call Number | Serial | 1692 | |||
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| Author | Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Prospects for using high-temperature superconductors to create electron bolometers | Type | Journal Article | ||
| Year | 1989 | Publication | Pisma v Zhurnal Tekhnicheskoi Fiziki | Abbreviated Journal | Pisma v Zhurnal Tekhnicheskoi Fiziki |
| Volume | 15 | Issue | 14 | Pages | 88-93 |
| Keywords | HTS HEB | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0320-0116 | ISBN | Medium | ||
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| Notes | Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров | Approved | no | ||
| Call Number | Serial | 1693 | |||
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| Author | Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D. | ||||
| Title | Fast-response superconducting electron bolometer | Type | Journal Article | ||
| Year | 1989 | Publication | Pisma v Zhurnal Tekhnicheskoi Fiziki | Abbreviated Journal | Pisma v Zhurnal Tekhnicheskoi Fiziki |
| Volume | 15 | Issue | 3 | Pages | 88-92 |
| Keywords | Nb HEB | ||||
| Abstract | The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1694 | |||
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| Author | Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Limiting characteristics of fast-response superconducting bolometers | Type | Journal Article | ||
| Year | 1989 | Publication | Zhurnal Tekhnicheskoi Fiziki | Abbreviated Journal | Zhurnal Tekhnicheskoi Fiziki |
| Volume | 59 | Issue | 2 | Pages | 11-120 |
| Keywords | HEB | ||||
| Abstract | Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1696 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. | ||||
| Title | Intense electromagnetic radiation heating of superconductor electrons in resistive state | Type | Journal Article | ||
| Year | 1988 | Publication | Fizika Nizkikh Temperatur | Abbreviated Journal | Fizika Nizkikh Temperatur |
| Volume | 14 | Issue | 7 | Pages | 753-763 |
| Keywords | Nb HEB | ||||
| Abstract | An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1697 | |||
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| Author | Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. | ||||
| Title | Capture of free holes by charged acceptors in uniaxially deformed Ge | Type | Journal Article | ||
| Year | 1988 | Publication | Fizika i Tekhnika Poluprovodnikov | Abbreviated Journal | Fizika i Tekhnika Poluprovodnikov |
| Volume | 22 | Issue | 3 | Pages | 540-543 |
| Keywords | Ge, free holes, capture | ||||
| Abstract | Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge | Approved | no | ||
| Call Number | Serial | 1698 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I. | ||||
| Title | Submillimeter backward-wave-tube spectrometer-relaxometer | Type | Journal Article | ||
| Year | 1987 | Publication | Pribory i Tekhnika Eksperimenta | Abbreviated Journal | Pribory i Tekhnika Eksperimenta |
| Volume | 30 | Issue | 4 | Pages | 131-137 |
| Keywords | BWO, applications | ||||
| Abstract | A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1699 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N. | ||||
| Title | Effect of electromagnetic radiation on a superconductor in a magnetic field | Type | Conference Article | ||
| Year | 1988 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 52 | Issue | 3 | Pages | 449-451 |
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| Abstract | The effect of electromagnetic radiation on thin superconducting films of Nb with a large number of static defects is investigated experimentally for the case where the film is in the resistive state due to an applied magnetic field and transport current. The results obtained are found to be well described by a model of spatially homogeneous electron heating. It is noted that the results obtained here for Nb films are also valid for Al, NbN, and MoRe films. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| ISSN | 0367-6765 | ISBN | Medium | ||
| Area | Expedition | Conference | 4th Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Tallin, Estonian SSR, Apr. 1987 | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1702 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. | ||||
| Title | Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum | Type | Journal Article | ||
| Year | 1987 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 46 | Issue | 5 | Pages | 237-238 |
| Keywords | YBCO HTS detectors | ||||
| Abstract | For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1703 | |||
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| Author | Gershenzon, Ye. M.; Goltsman, G. N.; Yelantyev, A. I.; Petrova, Ye. B.; Ptitsina, N. G.; Filatov, V. S. | ||||
| Title | Lecture demonstrations of properties of superconductors and liquid helium | Type | Journal Article | ||
| Year | 1987 | Publication | USSR Rept Phys. Math. JPRS UPM | Abbreviated Journal | USSR Rept Phys. Math. JPRS UPM |
| Volume | 24 | Issue | 7 | Pages | 51 |
| Keywords | demonstrations, lections | ||||
| Abstract | New demonstrations for low temperature physics courses are described. Two transparent Dewar vacuum flasks fitting one inside the other with the external flask for nitrogen and the internal flask for helium are used. The helium temperature can be regulated in the 4.2 to 1.6 K range and the effects of reducing helium to the superfluid state at 2.17 K can be shown: boiling abruptly stops and superfluid flow appears. In order to show the electric and magnetic characteristics of superconductivity, a superconducting NbTi solenoid containing nonsuperconducting wire and germanium and superconducting Nb materials with different critical temperatures is placed in the helium refrigerant vessel. The fall of the resistance at the critical temperatures can be shown. In order to show magnetic field and superconductive current flow properties a shunt of superconductive material is connected in parallel to the coil and is enclosed in a teflon container with a heater which can vary its temperature. When it is heated and not superconductive, magnetic field effects can be demonstrated and when it is unheated and superconducting a continuous current can be demonstrated. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1704 | |||
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| Author | Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. | ||||
| Title | The excitonic Zeeman effect in uniaxially-strained germanium | Type | Journal Article | ||
| Year | 1987 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 65 | Issue | 6 | Pages | 1233-1241 |
| Keywords | Ge, Zeeman effect | ||||
| Abstract | We have carried out a high-resolution spectroscopic study of the absorption of submillimeter radiation by free excitons in germanium compressed along the [ 1 11 ] axis in a magnetic field parallel to the compression axis. In particular, we studied the splitting of the 1s- 2p transition in fields up to 6 kOe at T = 1.6 K, and observed a complex pattern in the Zeeman splitting which we believe is related to the effect of thermal motion of the excitons in a magnetic field on their internal structure (the magneto-Stark effect). The calculated submillimeter spectrum of excitons agrees with the experimental data. We predict that in a magnetic field the energy of the 2p, term is a minimum at a finite value of the exciton momentum perpendicular to the field-that is, the energy minimum forms a ring in momentum space. It follows that the density of states for this term must be a nonmonotonic function of the energy. A theory is developed of analogous phenomena in positronium. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1705 | |||
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| Author | Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound | Type | Journal Article | ||
| Year | 1987 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 46 | Issue | 6 | Pages | 285-287 |
| Keywords | YBCO HTS HEB | ||||
| Abstract | For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1706 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. | ||||
| Title | Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium | Type | Journal Article | ||
| Year | 1986 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 64 | Issue | 4 | Pages | 889-897 |
| Keywords | Ge, trapping of free carriers | ||||
| Abstract | Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3). | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1707 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Observation of the free-exciton spectrum at submillimeter wavelengths | Type | Journal Article | ||
| Year | 1972 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 16 | Issue | 4 | Pages | 161-162 |
| Keywords | Ge, energy spectrum, free excitons | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1736 | |||
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| Author | Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Кагане, М. Л.; Мултановский, В. В.; Птицина, Н. Г. | ||||
| Title | Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 8 | Pages | 1430-1437 |
| Keywords | BWO spectroscopy, pure semiconductors, residual impurities | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Duplicated as 1714 | Approved | no | ||
| Call Number | Serial | 1712 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D. | ||||
| Title | Submillimeter backward wave tube spectrometer for measuring superconducting film transmission | Type | Journal Article | ||
| Year | 1983 | Publication | Pribory i Tekhnika Eksperimenta | Abbreviated Journal | Pribory i Tekhnika Eksperimenta |
| Volume | 26 | Issue | 5 | Pages | 134-137 |
| Keywords | BWO spectroscopy, spectrometer, transmission | ||||
| Abstract | A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| ISSN | 0032-8162 | ISBN | Medium | ||
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| Notes | Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок | Approved | no | ||
| Call Number | Serial | 1713 | |||
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| Author | Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
| Title | Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors | Type | Journal Article | ||
| Year | 1983 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
| Volume | 17 | Issue | 8 | Pages | 908-913 |
| Keywords | BWO spectroscopy, pure semiconductors, residual impurities | ||||
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| Notes | Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках | Approved | no | ||
| Call Number | Serial | 1714 | |||
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| Author | Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
| Title | Kinetics of submillimeter impurity and exciton photoconduction in Ge | Type | Journal Article | ||
| Year | 1982 | Publication | Optics and Spectroscopy | Abbreviated Journal | Optics and Spectroscopy |
| Volume | 52 | Issue | 4 | Pages | 454-455 |
| Keywords | Ge, exciton photoconduction | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1715 | |||
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| Author | Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Heating of quasiparticles in a superconducting film in the resistive state | Type | Journal Article | ||
| Year | 1981 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 34 | Issue | 5 | Pages | 268-271 |
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| Notes | Approved | no | |||
| Call Number | Serial | 1716 | |||
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| Author | Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state | Type | Journal Article | ||
| Year | 1982 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 36 | Issue | 7 | Pages | 296-299 |
| Keywords | HEB | ||||
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| Notes | Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии | Approved | no | ||
| Call Number | Serial | 1717 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
| Title | Cross section for binding of free carriers into excitons in germanium | Type | Journal Article | ||
| Year | 1981 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 33 | Issue | 11 | Pages | 574 |
| Keywords | Ge, excitons, photoconductivity | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1718 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Population and lifetime of excited states of shallow impurities in Ge | Type | Journal Article | ||
| Year | 1979 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 49 | Issue | 2 | Pages | 355-362 |
| Keywords | Ge, photothermal ionization, shallow impurities | ||||
| Abstract | An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1719 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. | ||||
| Title | Capture of photoexcited carriers by shallow impurity centers in germanium | Type | Journal Article | ||
| Year | 1979 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 50 | Issue | 4 | Pages | 728-734 |
| Keywords | Ge, photoexcited carriers, shallow impurity centers | ||||
| Abstract | Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1720 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. | ||||
| Title | Observation of free carrier resonances in p-type germanium at submillimeter wavelengths | Type | Journal Article | ||
| Year | 1978 | Publication | Sov. Phys. Solid State | Abbreviated Journal | Sov. Phys. Solid State |
| Volume | 20 | Issue | 4 | Pages | 573-579 |
| Keywords | p-Ge, free carriers, resonances | ||||
| Abstract | The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1721 | |||
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| Author | Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M. | ||||
| Title | Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it | Type | Conference Article | ||
| Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 42 | Issue | 6 | Pages | 1142-1148 |
| Keywords | energy spectrum, Ge, magnetic field | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1722 | |||
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| Author | Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. | ||||
| Title | Population of excited-states of small admixtures in germanium | Type | Conference Article | ||
| Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 42 | Issue | 6 | Pages | 1154-1159 |
| Keywords | Ge, excited states, admixtures | ||||
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| Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia | Place of Publication | Editor |
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| Notes | Approved | no | |||
| Call Number | Serial | 1723 | |||
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| Author | Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. | ||||
| Title | Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors | Type | Conference Article | ||
| Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 42 | Issue | 6 | Pages | 1231-1234 |
| Keywords | spectrum, semiconductors, admixtures, strong magnetic-field | ||||
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| Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia | Place of Publication | Editor |
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| Notes | Approved | no | |||
| Call Number | blagosklonskaya1978effect | Serial | 1724 | ||
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| Author | Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. | ||||
| Title | Effect of a strong magnetic field on the spectrum of donors in InSb | Type | Journal Article | ||
| Year | 1978 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
| Volume | 11 | Issue | 12 | Pages | 1395-1397 |
| Keywords | InSb, spectrum of donors, strong magnetic field | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1725 | |||
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| Author | Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. | ||||
| Title | Carrier lifetime in excited states of shallow impurities in germanium | Type | Journal Article | ||
| Year | 1977 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 25 | Issue | 12 | Pages | 539-543 |
| Keywords | Ge, shallow impurities, excited states | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1726 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. | ||||
| Title | Energy spectrum of acceptors in germanium and its response to a magnetic field | Type | Journal Article | ||
| Year | 1977 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 45 | Issue | 4 | Pages | 769-776 |
| Keywords | p-Ge, photoconductivity, energy spectrum, magnetic field | ||||
| Abstract | We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1727 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. | ||||
| Title | Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field | Type | Journal Article | ||
| Year | 1977 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 45 | Issue | 3 | Pages | 555-565 |
| Keywords | Ge, GaAs, magnetic field, donors, energy spectrum | ||||
| Abstract | The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1728 | |||
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| Author | Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. | ||||
| Title | Effect of a high magnetic field on the spectrum of donors in InSb | Type | Journal Article | ||
| Year | 1977 | Publication | Fizika i Tekhnika Poluprovodnikov | Abbreviated Journal | Fizika i Tekhnika Poluprovodnikov |
| Volume | 11 | Issue | 12 | Pages | 2373-2375 |
| Keywords | InSb, energy spectrum, donors, high magnetic field | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Воздействие сильного магнитного поля на спектр доноров в InSb | Approved | no | ||
| Call Number | Serial | 1729 | |||
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| Author | Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. | ||||
| Title | Intervalley cyclotron-impurity resonance of electrons in n-Ge | Type | Journal Article | ||
| Year | 1976 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 24 | Issue | 3 | Pages | 125-128 |
| Keywords | n-Ge, cyclotron-impurity resonance | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1730 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Investigation of free excitons in Ge and their condensation at submillimeter wavelengths | Type | Journal Article | ||
| Year | 1976 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 43 | Issue | 1 | Pages | 116-122 |
| Keywords | Ge, free excitons | ||||
| Abstract | Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1731 | |||
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| Author | Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. | ||||
| Title | Investigation of population and ionization of donor excited states in Ge | Type | Conference Article | ||
| Year | 1976 | Publication | Physics of Semiconductors | Abbreviated Journal | Physics of Semiconductors |
| Volume | Issue | Pages | 631-634 | ||
| Keywords | Ge, donor excited states | ||||
| Abstract | |||||
| Address | Amsterdam | ||||
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| Publisher | North-Holland Publishing Co. | Place of Publication | Editor |
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| Notes | Approved | no | |||
| Call Number | Serial | 1732 | |||
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| Author | Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. | ||||
| Title | Investigation of excited donor states in GaAs | Type | Journal Article | ||
| Year | 1974 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
| Volume | 7 | Issue | 10 | Pages | 1248-1250 |
| Keywords | GaAs, excited donor states | ||||
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| Publisher | Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa | Place of Publication | Editor |
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| Notes | Approved | no | |||
| Call Number | Serial | 1733 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. | ||||
| Title | Energy spectrum of free excitons in germanium | Type | Journal Article | ||
| Year | 1973 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 18 | Issue | 3 | Pages | 93 |
| Keywords | Ge, free excitons, energy spectrum | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1734 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Submillimeter spectroscopy of semiconductors | Type | Journal Article | ||
| Year | 1973 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 37 | Issue | 2 | Pages | 299-304 |
| Keywords | semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons | ||||
| Abstract | The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1735 | |||
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| Author | Goltsman, G. | ||||
| Title | Simple method for stabilizing power of submillimetric spectrometer | Type | Journal Article | ||
| Year | 1972 | Publication | Pribory i Tekhnika Eksperimenta | Abbreviated Journal | Pribory i Tekhnika Eksperimenta |
| Volume | Issue | 1 | Pages | 136 | |
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| Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia | Place of Publication | Editor |
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| Notes | Approved | no | |||
| Call Number | Serial | 1738 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. | ||||
| Title | Binding energy of a carrier with a neutral impurity atom in germanium and in silicon | Type | Journal Article | ||
| Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 14 | Issue | 5 | Pages | 185-186 |
| Keywords | Ge, Si, neutral impurity atom, binding energy | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1739 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N. | ||||
| Title | Transitions of electrons between excited states of donors in germanium | Type | Journal Article | ||
| Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 14 | Issue | 2 | Pages | 63-65 |
| Keywords | Ge, donors, excited states | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1740 | |||
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| Author | Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. | ||||
| Title | Germanium hot-electron narrow-band detector | Type | Journal Article | ||
| Year | 1971 | Publication | Sov. Radio Engineering And Electronic Physics | Abbreviated Journal | Sov. Radio Engineering And Electronic Physics |
| Volume | 16 | Issue | 8 | Pages | 1346 |
| Keywords | Ge HEB detectors | ||||
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| Publisher | Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 | Place of Publication | Editor |
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| Notes | Approved | no | |||
| Call Number | Serial | 1741 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. | ||||
| Title | Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium | Type | Journal Article | ||
| Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 14 | Issue | 6 | Pages | 241 |
| Keywords | Ge, gamma irradiation, defects, impurities | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1742 | |||
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| Author | Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory | ||||
| Title | Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors | Type | Abstract | ||
| Year | 2020 | Publication | Graphene and 2dm Virt. Conf. | Abbreviated Journal | Graphene and 2DM Virt. Conf. |
| Volume | Issue | Pages | |||
| Keywords | single layer graphene, SLG, CVD, plasmons, FET | ||||
| Abstract | Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464. | ||||
| Address | Grenoble, France | ||||
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| Area | Expedition | Conference | Graphene and 2dm Virtual Conference & Expo | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1743 | |||
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| Author | Goltsman, Gregory | ||||
| Title | Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors | Type | Conference Article | ||
| Year | 2017 | Publication | 16th ISEC | Abbreviated Journal | 16th ISEC |
| Volume | Issue | Pages | Th-I-QTE-03 (1 to 3) | ||
| Keywords | waveguide SSPD, SNSPD | ||||
| Abstract | We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chipquantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. | ||||
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| Area | Expedition | Conference | IEEE/CSC & ESAS Superconductivity News Forum | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1745 | |||
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| Author | Gol’tsman, G.N. | ||||
| Title | Overview of recent results for superconducting NbN terahertz and optical detectors and mixers | Type | Miscellaneous | ||
| Year | 2014 | Publication | SM2 – Seminar on Terahertz Photonics | Abbreviated Journal | |
| Volume | Issue | Pages | 0562 | ||
| Keywords | NbN SSPD, SNSPD, HEB | ||||
| Abstract | We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1746 | |||
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| Author | Pentin, Ivan; Finkel, Matvey; Maslennikov, Sergey; Vakhtomin, Yuri; Smirnov, Konstantin; Kaurova, Nataliya; Goltsman, Gregory | ||||
| Title | Superconducting hot-electron-bolometer mixers for the mid-IR | Type | Journal Article | ||
| Year | 2017 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
| Volume | Issue | 10 | Pages | ||
| Keywords | IR NbN HEB mixers | ||||
| Abstract | The work presents the result of development of the NbN superconducting hot-electron-bolometer (HEB) mixer. The sensitive element of the mixer is directly coupled to mid-IR radiation, and doesn’t have planar metallic antenna. Investigations of noise characteristics of NbN HEB mixer were performed at the frequency 28.4 THz (λ = 10.6 µm) by using gas-discharge CW CO2-laser without consideration of optical and electrical losses in the heterodyne receiver. The noise temperature of NbN HEB mixer with the size of the sensitive element 10 µm × 10 µm was 2320 K (~ 1.5hν/kB) at the heterodyne frequency of 28.4 THz. The noise temperature was determined by measuring the Y-factor taking into account the term which describes fluctuations of zero-point oscillations in accordance with the fluctuation-dissipation theorem of Calle-Welton. Isothermal method was used to estimate the absorbed heterodyne radiation power which was 9 µW at the optimal operating point for the minimum noise temperature of NbN HEB mixer. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| ISSN | 1684-1719 | ISBN | Medium | ||
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| Notes | http://jre.cplire.ru/jre/oct17/9/abstract.html (Russian) Гетеродинный приемник со сверхпроводниковым смесителем на эффекте электронного разогрева для среднего инфракрасного диапазона | Approved | no | ||
| Call Number | Serial | 1747 | |||
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| Author | Averkin, A. S.; Shishkin, A. G.; Chichkov, V. I.; Voronov, B. M.; Goltsman, G. N.; Karpov, A.; Ustinov, A. V. | ||||
| Title | Tunable frequency-selective surface based on superconducting split-ring resonators | Type | Conference Article | ||
| Year | 2014 | Publication | 8th Metamaterials | Abbreviated Journal | 8th Metamaterials |
| Volume | Issue | Pages | |||
| Keywords | superconducting split-ring resonators | ||||
| Abstract | We study a possibility to use the 2D superconducting metamaterial as a tunable frequency-selective surface (FSS). The proposed FSS is made of sub-wavelength size (l/14) metamaterial unit cells, where a split-ring resonator is embedded in a small iris aperture in a metal plane. The split-ring resonator is made of NbN film, and its resonance frequency is tuned by the temperature of the sample, changing the kinetic inductance of NbN film. The Ansoft HFSS simulation predicts the FSS tuning range of about 10-20 %. The developed superconducting FSS may be used as a tunable band-pass filter or modulator. | ||||
| Address | Copenhagen, Denmark | ||||
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| Area | Expedition | Conference | 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics – Metamaterials | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1749 | |||
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| Author | Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, Roman; Korneev, A.; Kouminov, P.; Okunev, O.; Chulkova, G.; Gol'tsman, G. | ||||
| Title | Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range | Type | Miscellaneous | ||
| Year | 2004 | Publication | ResearchGate | Abbreviated Journal | ResearchGate |
| Volume | Issue | Pages | |||
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices. | ||||
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| Notes | Not attributed to any publisher! File name: PR9VervekinSfin_f.doc; Author: JAOLEARY; Last modification date: 2004-02-26 | Approved | no | ||
| Call Number | Serial | 1751 | |||
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| Author | Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. | ||||
| Title | Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon | Type | Journal Article | ||
| Year | 2001 | Publication | Jetp Lett. | Abbreviated Journal | Jetp Lett. |
| Volume | 73 | Issue | 1 | Pages | 44-47 |
| Keywords | uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field | ||||
| Abstract | The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-3640 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1752 | |||
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| Author | Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. | ||||
| Title | Механизм преобразования частоты в n-InSb-смесителе | Type | Journal Article | ||
| Year | 1991 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 25 | Issue | 11 | Pages | 1986-1998 |
| Keywords | n-InSb mixer | ||||
| Abstract | Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1753 | |||
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| Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.; Гусинский, Э. Н.; Литвак-Горская, Л. Б. | ||||
| Title | Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла | Type | Journal Article | ||
| Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 24 | Issue | 12 | Pages | 2145-2150 |
| Keywords | Hall constant, concentration of impurities, p-Si | ||||
| Abstract | На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1754 | |||
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| Author | Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. | ||||
| Title | Влияние магнитного поля на захват свободных носителей мелкими примесями в Ge | Type | Journal Article | ||
| Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 24 | Issue | 10 | Pages | 1881-1883 |
| Keywords | impurities, photoconductivity, Ge, capture of free carriers, magnetic field | ||||
| Abstract | Цель настоящей работы — измерение кинетики примесной фотопроводимости в квантующих магнитных полях. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1755 | |||
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| Author | Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б. | ||||
| Title | Кинетические явления в компенсированном n-InSb при низких температурах | Type | Journal Article | ||
| Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 24 | Issue | 1 | Pages | 3-24 |
| Keywords | compensated n-InSb, impurities | ||||
| Abstract | Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1756 | |||
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| Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. | ||||
| Title | Особенности температурной зависимости холловской подвижности в легированных и некомпенсированных полупроводниках | Type | Journal Article | ||
| Year | 1989 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 23 | Issue | 2 | Pages | 338-345 |
| Keywords | weakly compensated Si, Ge, doped, Hall mobility | ||||
| Abstract | На примере легированного и слабо компенсированного Si⟨B⟩ проведены исследования особенностей температурной зависимости подвижности при различных механизмах рассеяния. Уточнен метод определения концентрации компенсирующей примеси по μI(T). Полученные результаты обсуждаются и для Ge. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1758 | |||
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| Author | Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. | ||||
| Title | Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ | Type | Journal Article | ||
| Year | 1986 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 20 | Issue | 1 | Pages | 99-103 |
| Keywords | n-Ge, Hubbard upper zone conductivity, negative magnetoresistance | ||||
| Abstract | В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1759 | |||
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| Author | Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. | ||||
| Title | Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца | Type | Journal Article | ||
| Year | 1985 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 19 | Issue | 9 | Pages | 1696-1698 |
| Keywords | uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1760 | |||
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| Author | Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. | ||||
| Title | О механизме динамического сужения линии ЭПР доноров фосфора в кремнии | Type | Journal Article | ||
| Year | 1984 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 18 | Issue | 3 | Pages | 421-425 |
| Keywords | Si, phosphorus donors, EPR | ||||
| Abstract | Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1761 | |||
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| Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. | ||||
| Title | Об одном способе определения концентрации глубоких примесей в германии | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 10 | Pages | 1896-1898 |
| Keywords | Ge, deep impurities | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1762 | |||
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| Author | Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. | ||||
| Title | Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 10 | Pages | 1873-1876 |
| Keywords | compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1763 | |||
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| Author | Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. | ||||
| Title | О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 3 | Pages | 499-501 |
| Keywords | shallow neutral impurities, capture, inverse distribution function, Si | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1764 | |||
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| Author | Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. | ||||
| Title | Electron–phonon interaction in disordered conductors | Type | Journal Article | ||
| Year | 1999 | Publication | Phys. Rev. B Condens. Matter | Abbreviated Journal | Phys. Rev. B Condens. Matter |
| Volume | 263-264 | Issue | Pages | 190-192 | |
| Keywords | disordered conductors, electron-phonon interaction | ||||
| Abstract | The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0921-4526 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1765 | |||
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| Author | Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. | ||||
| Title | Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate | Type | Journal Article | ||
| Year | 1997 | Publication | Phys. Rev. B | Abbreviated Journal | Phys. Rev. B |
| Volume | 56 | Issue | 16 | Pages | 10089-10096 |
| Keywords | disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity | ||||
| Abstract | The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0163-1829 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1766 | |||
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| Author | Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. | ||||
| Title | Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films | Type | Conference Article | ||
| Year | 1996 | Publication | Czech J. Phys. | Abbreviated Journal | Czech J. Phys. |
| Volume | 46 | Issue | S5 | Pages | 2489-2490 |
| Keywords | Al, Be, Nb films | ||||
| Abstract | The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K). | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0011-4626 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1767 | |||
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| Author | Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
| Title | Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons | Type | Journal Article | ||
| Year | 1975 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 40 | Issue | 2 | Pages | 311-315 |
| Keywords | Ge, cyclotron resonance | ||||
| Abstract | Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1768 | |||
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| Author | Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. | ||||
| Title | Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates | Type | Journal Article | ||
| Year | 2021 | Publication | Phys. Rev. Applied | Abbreviated Journal | Phys. Rev. Applied |
| Volume | 15 | Issue | 5 | Pages | 054014 |
| Keywords | InOx, Au/Ni, NbN films | ||||
| Abstract | We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2331-7019 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1769 | |||
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| Author | Shcherbatenko, M.; Elezov, M.; Manova, N.; Sedykh, K.; Korneev, A.; Korneeva, Y.; Dryazgov, M.; Simonov, N.; Feimov, A.; Goltsman, G.; Sych, D. | ||||
| Title | Single-pixel camera with a large-area microstrip superconducting single photon detector on a multimode fiber | Type | Journal Article | ||
| Year | 2021 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 118 | Issue | 18 | Pages | 181103 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | High sensitivity imaging at the level of single photons is an invaluable tool in many areas, ranging from microscopy to astronomy. However, development of single-photon sensitive detectors with high spatial resolution is very non-trivial. Here we employ the single-pixel imaging approach and demonstrate a proof-of-principle single-pixel single-photon imaging setup. We overcome the problem of low light gathering efficiency by developing a large-area microstrip superconducting single photon detector coupled to a multi-mode optical fiber interface. We show that the setup operates well in the visible and near infrared spectrum, and is able to capture images at the single-photon level. We thank Philipp Zolotov and Pavel Morozov for NbN film fabrication, ARC coating, and fiber coupling of the detector. We also thank Swabian Instruments GmbH and Dr. Helmut Fedder personally for the kindly provided experimental equipment (Time Tagger Ultra 8). The work in the part of SNSPD research and development was supported by the Russian Foundation for Basic Research Project No. 18-29-20100. The work in the part of the optical setup and imaging was supported by Russian Foundation for Basic Research Project No. 20-32-51004. |
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1770 | |||
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| Author | Goltsman, Gregory N. | ||||
| Title | Development and applications of terahertz hot electron bolometers | Type | Abstract | ||
| Year | 2021 | Publication | 1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments | Abbreviated Journal | 1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments |
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| Abstract | The development of techniques and technologies for the deposition of ultrathin superconducting films, the creation of superconducting structures on a nanometer scale is the basis of significant progress in the field of superconducting receiving systems. Ultrathin NbN films are the basis for a wide range of record-breaking hot electron devices: direct and heterodyne terahertz detectors. Terahertz receivers are especially in demand in high-resolution spectroscopy for astronomical, atmospheric, and medical research. HEB receivers are widely used in terahertz radio astronomy. For example, the Dutch SRON Institute is preparing a project for the GUSTO hot air balloon telescope with a HEB mixer array at 1.4 THz and 1.9 THz. A 5-meter Chinese terahertz telescope DATE5 with HEB mixers at 1.4 THz is installed at the South Pole. The Stratospheric Observatory (SOFIA) uses HEB mixer matrices in the GREAT instrument operating in the 1.2 – 4.7 THz range. It is planned to implement the international project Origins Space Telescope (OST) in the far infrared region based on HEB receivers. The Japanese project Smiles-2 will allow measurements at 1.8 THz in the upper layers of the stratosphere and mesosphere. The development of the Millimetron space observatory continues in Russia. | ||||
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| Area | Expedition | Conference | First Moscow International Conference on Submillimeter and Millimeter Astronomy: Objectives and Instruments, Astro Space Center, Moscow, 12-16 April 2021, id. 2 | ||
| Notes | Downloaded from https://millimetron.ru/conference_2021/Goltsman.pdf; Author: Sergey; Last modification: 2021-04-14 | Approved | no | ||
| Call Number | Serial | 1771 | |||
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| Author | Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
| Title | Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions | Type | Journal Article | ||
| Year | 1976 | Publication | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников | Abbreviated Journal | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
| Volume | 10 | Issue | Pages | 1379-1383 | |
| Keywords | Ge, cyclotron resonance, charged impurities, | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1772 | |||
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| Author | Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. | ||||
| Title | Absorption spectra in electron transitions between excited states of impurities in germanium | Type | Journal Article | ||
| Year | 1975 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 22 | Issue | 4 | Pages | 95-97 |
| Keywords | Ge, impurities, excited states, absorption spectra | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1773 | |||
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| Author | Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
| Title | Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields | Type | Journal Article | ||
| Year | 1972 | Publication | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников | Abbreviated Journal | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
| Volume | 6 | Issue | Pages | 362-363 | |
| Keywords | Ge, cyclotron resonance, quantizing magnetic fields | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1774 | |||
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| Author | Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E. | ||||
| Title | Amplification of a Raman scattering signal by carbon nanotubes | Type | Journal Article | ||
| Year | 2018 | Publication | Dokl. Phys. | Abbreviated Journal | Dokl. Phys. |
| Volume | 63 | Issue | 12 | Pages | 496-498 |
| Keywords | carbon nanotubes, CNT, Raman scattering, RLS | ||||
| Abstract | The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1028-3358 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1775 | |||
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| Author | Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N. | ||||
| Title | Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection | Type | Journal Article | ||
| Year | 2016 | Publication | Semicond. | Abbreviated Journal | Semicond. |
| Volume | 50 | Issue | 12 | Pages | 1600-1603 |
| Keywords | carbon nanotubes, CNT detectors | ||||
| Abstract | Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7826 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1776 | |||
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| Author | Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Leiman, V. G.; Fedorov, G.; Goltzman, G. N.; Gayduchenko, I. A.; Titova, N.; Coquillat, D.; But, D.; Knap, W.; Mitin, V.; Shur, M. S. | ||||
| Title | Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection | Type | Journal Article | ||
| Year | 2016 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 120 | Issue | 4 | Pages | 044501 (1 to 13) |
| Keywords | carbon nanotubes, CNT detectors, plasmons | ||||
| Abstract | We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1777 | |||
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| Author | Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. | ||||
| Title | Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors | Type | Journal Article | ||
| Year | 2015 | Publication | Carbon | Abbreviated Journal | Carbon |
| Volume | 87 | Issue | Pages | 330-337 | |
| Keywords | carbon nanotubes, CNT detectors, field effect transistors, FET | ||||
| Abstract | Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0008-6223 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1778 | |||
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| Author | Gorokhov, G.; Bychanok, D.; Gayduchenko, I.; Rogov, Y.; Zhukova, E.; Zhukov, S.; Kadyrov, L.; Fedorov, G.; Ivanov, E.; Kotsilkova, R.; Macutkevic, J.; Kuzhir, P. | ||||
| Title | THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites | Type | Journal Article | ||
| Year | 2020 | Publication | Polymers (Basel) | Abbreviated Journal | Polymers (Basel) |
| Volume | 12 | Issue | 12 | Pages | 3037 (1 to 14) |
| Keywords | THz spectroscopy; nanocomposites, percolation threshold, time-domain spectroscopy, time-domain spectrometer, TDS | ||||
| Abstract | Polymer composites containing nanocarbon fillers are under intensive investigation worldwide due to their remarkable electromagnetic properties distinguished not only by components as such, but the distribution and interaction of the fillers inside the polymer matrix. The theory herein reveals that a particular effect connected with the homogeneity of a composite manifests itself in the terahertz range. Transmission time-domain terahertz spectroscopy was applied to the investigation of nanocomposites obtained by co-extrusion of PLA polymer with additions of graphene nanoplatelets and multi-walled carbon nanotubes. The THz peak of permittivity's imaginary part predicted by the applied model was experimentally shown for GNP-containing composites both below and above the percolation threshold. The physical nature of the peak was explained by the impact on filler particles excluded from the percolation network due to the peculiarities of filler distribution. Terahertz spectroscopy as a versatile instrument of filler distribution diagnostics is discussed. | ||||
| Address | Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu, Finland | ||||
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| Language | English | Summary Language | Original Title | ||
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| ISSN | 2073-4360 | ISBN | Medium | ||
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| Notes | PMID:33353036; PMCID:PMC7767186 | Approved | no | ||
| Call Number | Serial | 1780 | |||
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| Author | Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. | ||||
| Title | Helicity-sensitive plasmonic terahertz interferometer | Type | Journal Article | ||
| Year | 2020 | Publication | Nano Lett. | Abbreviated Journal | Nano Lett. |
| Volume | 20 | Issue | 10 | Pages | 7296-7303 |
| Keywords | graphene, plasmonic interferometer, radiation helicity, terahertz radiation | ||||
| Abstract | Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. | ||||
| Address | CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1530-6984 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:32903004 | Approved | no | ||
| Call Number | Serial | 1781 | |||
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| Author | Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. | ||||
| Title | Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes | Type | Journal Article | ||
| Year | 2015 | Publication | Nano Lett. | Abbreviated Journal | Nano Lett. |
| Volume | 15 | Issue | 12 | Pages | 7859-7866 |
| Keywords | carbon nanotubes, CNT, tunable superconductivity, van Hove singularities | ||||
| Abstract | Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube. | ||||
| Address | Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States | ||||
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| ISSN | 1530-6984 | ISBN | Medium | ||
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| Notes | PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 | Approved | no | ||
| Call Number | Serial | 1782 | |||
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| Author | Akhmadishina, K. F.; Bobrinetskiy, I. I.; Komarov, I. A.; Malovichko, A. M.; Nevolin, V. K.; Fedorov, G. E.; Golovin, A. V.; Zalevskiy, A. O.; Aidarkhanov, R. D. | ||||
| Title | Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers | Type | Journal Article | ||
| Year | 2015 | Publication | Semicond. | Abbreviated Journal | Semicond. |
| Volume | 49 | Issue | 13 | Pages | 1749-1753 |
| Keywords | carbon nanotubes, CNT detectors | ||||
| Abstract | The possibility of the fabrication of a fast-response biological sensor based on a composite of single-layer carbon nanotubes and aptamers for the specific detection of proteins is shown. The effect of modification of the surface of the carbon nanotubes on the selectivity and sensitivity of the sensors is investigated. It is shown that carboxylated nanotubes have a better selectivity for detecting thrombin. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7826 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1783 | |||
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| Author | Dryazgov, M.; Semenov, A.; Manova, N.; Korneeva, Y.; Korneev, A. | ||||
| Title | Modelling of normal domain evolution after single-photon absorption of a superconducting strip of micron width | Type | Conference Article | ||
| Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1695 | Issue | Pages | 012195 (1 to 4) | |
| Keywords | SSPD modelling, SNSPD | ||||
| Abstract | The present paper describes a modelling of normal domain evolution in superconducting strip of micron width using solving differential equations describing the temperature and current changes. The solving results are compared with experimental data. This comparison demonstrates the high accuracy of the model. In future, it is possible to employ this model for improvement of single photon detector based on micron-scale superconducting strips. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1785 | |||
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| Author | Manova, N. N.; Simonov, N. O.; Korneeva, Y. P.; Korneev, A. A. | ||||
| Title | Developing of NbN films for superconducting microstrip single-photon detector | Type | Conference Article | ||
| Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1695 | Issue | Pages | 012116 (1 to 5) | |
| Keywords | NbN SSPD, SNSPD, NbN films | ||||
| Abstract | We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1786 | |||
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| Author | Polyakova, M. I.; Korneev, A. A.; Semenov, A. V. | ||||
| Title | Comparison single- and double- spot detection efficiencies of SSPD based to MoSi and NbN films | Type | Conference Article | ||
| Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1695 | Issue | Pages | 012146 (1 to 3) | |
| Keywords | NbN SSPD, SNSPD, MoSi | ||||
| Abstract | In this work, we present results of quantum detector tomography of superconducting single photon detector (SSPD) based on MoSi film, and compare them with previously reported data on NbN. We find that for both materials hot spot interaction length coincides with the strip width, and the dependence of single and double-spot detection efficiencies on bias current are compatible with sufficiently large hot-spot size, approaching the strip width. | ||||
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| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1787 | |||
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| Author | Vodolazov, D. Y.; Manova, N. N.; Korneeva, Y. P.; Korneev, A. A. | ||||
| Title | Timing jitter in NbN superconducting microstrip single-photon detector | Type | Journal Article | ||
| Year | 2020 | Publication | Phys. Rev. Applied | Abbreviated Journal | Phys. Rev. Applied |
| Volume | 14 | Issue | 4 | Pages | 044041 (1 to 8) |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We experimentally study timing jitter of single-photon detection by NbN superconducting strips with width w ranging from 190 nm to 3μm. We find that timing jitter of both narrow (190 nm) and micron-wide strips is about 40 ps at currents where internal detection efficiency η saturates and it is close to our instrumental jitter. We also calculate intrinsic timing jitter in wide strips using the modified time-dependent Ginzburg-Landau equation coupled with a two-temperature model. We find that with increasing width the intrinsic timing jitter increases and the effect is most considerable at currents where a rapid growth of η changes to saturation. We relate it with complicated vortex and antivortex dynamics, which depends on a photon’s absorption site across the strip and its width. The model also predicts that at current close to depairing current the intrinsic timing jitter of a wide strip could be about ℏ/kBTc (Tc is a critical temperature of superconductor), i.e., the same as for a narrow strip. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2331-7019 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1788 | |||
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| Author | Shein, K. V.; Zarudneva, A. A.; Emel’yanova, V. O.; Logunova, M. A.; Chichkov, V. I.; Sobolev, A.S.; Zav’yalov, V. V.; Lehtinen, J. S.; Smirnov, E. O.; Korneeva, Y. P.; Korneev, A. A.; Arutyunov, K. Y. | ||||
| Title | Superconducting microstructures with high impedance | Type | Journal Article | ||
| Year | 2020 | Publication | Phys. Solid State | Abbreviated Journal | Phys. Solid State |
| Volume | 62 | Issue | 9 | Pages | 1539-1542 |
| Keywords | superconducting channels, SIS, inetic inductance, tunneling contacts, high impedance | ||||
| Abstract | The transport properties of two types of quasi-one-dimensional superconducting microstructures were investigated at ultra-low temperatures: the narrow channels close-packed in the shape of meander, and the chains of tunneling contacts “superconductor-insulator-superconductor.” Both types of the microstructures demonstrated high value of high-frequency impedance and-or the dynamic resistance. The study opens up potential for using of such structures as current stabilizing elements with zero dissipation. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7834 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1789 | |||
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| Author | Korneeva, Y. P.; Manova, N. N.; Florya, I. N.; Mikhailov, M. Y.; Dobrovolskiy, O. V.; Korneev, A. A.; Vodolazov, D. Y. | ||||
| Title | Different single-photon response of wide and narrow superconducting MoxSi1−x strips | Type | Journal Article | ||
| Year | 2020 | Publication | Phys. Rev. Applied | Abbreviated Journal | Phys. Rev. Applied |
| Volume | 13 | Issue | 2 | Pages | 024011 (1 to 7) |
| Keywords | MoSi SSPD, SNSPD | ||||
| Abstract | The photon count rate (PCR) of superconducting single-photon detectors made of MoxSi1−x films shaped as a 2-μm-wide strip and a 115-nm-wide meander strip line is studied experimentally as a function of the dc biasing current at different values of the perpendicular magnetic field. For the wide strip, a crossover current Icross is observed, below which the PCR increases with an increasing magnetic field and above which it decreases. This behavior contrasts with the narrow MoxSi1−x meander, for which no crossover current is observed, thus suggesting different photon-detection mechanisms in the wide and narrow strips. Namely, we argue that in the wide strip the absorbed photon destroys superconductivity locally via the vortex-antivortex mechanism for the emergence of resistance, while in the narrow meander superconductivity is destroyed across the whole strip line, forming a hot belt. Accordingly, the different photon-detection mechanisms associated with vortices and the hot belt determine the qualitative difference in the dependence of the PCR on the magnetic field. | ||||
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| ISSN | 2331-7019 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1790 | |||
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| Author | Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory | ||||
| Title | Integrated contra-directional coupler for NV-centers photon filtering | Type | Conference Article | ||
| Year | 2020 | Publication | Proc. 32-nd EMSS | Abbreviated Journal | Proc. 32-nd EMSS |
| Volume | Issue | Pages | 354-360 | ||
| Keywords | NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings | ||||
| Abstract | We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds. | ||||
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| ISSN | 2724-0029 | ISBN | 978-88-85741-44-7 | Medium | |
| Area | Expedition | Conference | 32nd European Modeling & Simulation Symposium | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1839 | |||
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| Author | Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory | ||||
| Title | Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds | Type | Conference Article | ||
| Year | 2020 | Publication | Proc. 32-nd EMSS | Abbreviated Journal | Proc. 32-nd EMSS |
| Volume | Issue | Pages | 344-348 | ||
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| Abstract | The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength. | ||||
| Address | NV-centers, nanodiamonds | ||||
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| ISSN | 2724-0029 | ISBN | 978-88-85741-44-7 | Medium | |
| Area | Expedition | Conference | 32nd European Modeling & Simulation Symposium | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1840 | |||
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| Author | Neroev, V. V.; Iomdina, E. N.; Khandzhyan, A. T.; Khodzhabekyan, N. V.; Sengaeva, M. D.; Ivanova, A. V.; Seliverstov, S. V.; Teplyakova, K. O.; Goltsman, G. N. | ||||
| Title | Experimental study of the effect of corneal hydration and its biomechanical properties on the results of photorefractive keratectomy | Type | Journal Article | ||
| Year | 2021 | Publication | Vestn. Oftalmol. | Abbreviated Journal | Vestn. Oftalmol. |
| Volume | 137 | Issue | 3 | Pages | 68-75 |
| Keywords | THz scanning, cornea, photorefractive keratectomy, medicine | ||||
| Abstract | Water content in the cornea may affect the outcome of its excimer laser ablation, especially in presbyopic patients with myopic refraction. This hypothesis can be tested by scanning the cornea in the terahertz (THz) range to determine its hydration level. Purpose: To study the effect of hydration of the cornea determined by non-contact THz scanning and its biomechanical parameters on the results of photorefractive keratectomy (PRK) in an experiment. Material and methods: PRK was performed using the Nidek EC-5000 QUEST excimer laser on 8 rabbit eyes. Corneal hydration was evaluated by determining the reflection coefficient (RC) in the THz electromagnetic radiation range before PRK, after 3-5 days, and after 1, 2, 3, and 4 months. Clinical examination included autorefractometry, assessment of corneal thickness and other anatomical and optical parameters of the anterior eye segment (Galilei G6, Ziemer Ophthalmic Systems AG 6.0.2, Switzerland), measurement of corneal hysteresis (CH) and corneal resistance factor (CRF) using the Ocular Response Analyzer (ORA; Reichert, USA), as well as tear production (Schirmer test). Results: The initial water content in the cornea has a significant effect on the thickness of the removed layer, i.e. on the PRK effect, with correlation coefficient of Rs= -0.976 (p<0.01). The correlation between CH and the ablation depth is less pronounced (Rs=0.643), and CRF had no correlation with it (Rs= -0.089). Biomechanical indicators of the cornea depend on its hydration: changes in CH and CRF after excimer laser ablation qualitatively coincide with changes in RC, the correlation coefficient between RC and the initial value of CH is R= -0.619 (moderate negative correlation). Conclusion: THz scanning is an effective non-contact technology for monitoring corneal hydration level. The mismatch of the hypoeffect of keratorefractive excimer laser intervention planned for patients with presbyopia with the actual outcome can be caused by individual decrease in the initial water content in the cornea. |
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1794 | |||
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| Author | Smirnov, K.; Moshkova, M.; Antipov, A.; Morozov, P.; Vakhtomin, Y. | ||||
| Title | The cascade switching of the photon number resolving superconducting single-photon detectors | Type | Journal Article | ||
| Year | 2021 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 31 | Issue | 2 | Pages | 1-4 |
| Keywords | PNR SSPD, SNSPD | ||||
| Abstract | In this article, present the first detailed study of cascade switching in superconducting photon number resolving detectors. The detectors were made in the form of four parallel nanowires, coupled with the single-mode optical fiber and mounted into a closed-cycle refrigerator with a temperature of 2.1 K. We found out the value of additional false pulses (N cas.sw. ) appearing due to cascade switching and showed that it is possible to set up the detector bias current that corresponds to a high level of the detection efficiency and a low level of N cas.sw. simultaneously. We reached the detection efficiency of 60% and N cas.sw. = 0.3%. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1796 | |||
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| Author | Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. | ||||
| Title | Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation | Type | Journal Article | ||
| Year | 2020 | Publication | Sci. Rep. | Abbreviated Journal | Sci. Rep. |
| Volume | 10 | Issue | 1 | Pages | 16819 |
| Keywords | VN HEB | ||||
| Abstract | The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively. | ||||
| Address | National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2045-2322 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:33033360; PMCID:PMC7546726 | Approved | no | ||
| Call Number | Serial | 1797 | |||
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| Author | Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. | ||||
| Title | Influence of deposited material energy on superconducting properties of the WSi films | Type | Conference Article | ||
| Year | 2020 | Publication | IOP Conf. Ser.: Mater. Sci. Eng. | Abbreviated Journal | IOP Conf. Ser.: Mater. Sci. Eng. |
| Volume | 781 | Issue | Pages | 012013 (1 to 6) | |
| Keywords | WSi SSPD, SNSPD | ||||
| Abstract | WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1757-899X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1798 | |||
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| Author | Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K. | ||||
| Title | Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range | Type | Conference Article | ||
| Year | 2020 | Publication | IOP Conf. Ser.: Mater. Sci. Eng. | Abbreviated Journal | IOP Conf. Ser.: Mater. Sci. Eng. |
| Volume | 781 | Issue | Pages | 012011 (1 to 5) | |
| Keywords | WSi, NbN SSPD, SNSPD | ||||
| Abstract | Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm. | ||||
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| ISSN | 1757-899X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1799 | |||
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| Author | Zhang, X.; Lita, A. E.; Smirnov, K.; Liu, H. L.; Zhu, D.; Verma, V. B.; Nam, S. W.; Schilling, A. | ||||
| Title | Strong suppression of the resistivity near the superconducting transition in narrow microbridges in external magnetic fields | Type | Journal Article | ||
| Year | 2020 | Publication | Phys. Rev. B | Abbreviated Journal | Phys. Rev. B |
| Volume | 101 | Issue | 6 | Pages | 060508 (1 to 6) |
| Keywords | MoSi, WSi films | ||||
| Abstract | We have investigated a series of superconducting bridges based on homogeneous amorphous WSi and MoSi films, with bridge widths w ranging from 2 to 1000μm and film thicknesses d∼4−6 and 100 nm. Upon decreasing the bridge widths below the respective Pearl lengths, we observe in all cases distinct changes in the characteristics of the resistive transitions to superconductivity. For each of the films, the resistivity curves R(B,T) separate at a well-defined and field-dependent temperature T∗(B) with decreasing the temperature, resulting in a dramatic suppression of the resistivity and a sharpening of the transitions with decreasing bridge width w. The associated excess conductivity in all the bridges scales as 1/w, which may suggest either the presence of a highly conducting region that is dominating the electric transport, or a change in the vortex dynamics in narrow enough bridges. We argue that this effect can only be observed in materials with sufficiently weak vortex pinning. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2469-9950 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1800 | |||
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| Author | Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B. | ||||
| Title | Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion | Type | Journal Article | ||
| Year | 2019 | Publication | Opt. Lett. | Abbreviated Journal | Opt. Lett. |
| Volume | 44 | Issue | 5 | Pages | 1198-1201 |
| Keywords | HEB applications | ||||
| Abstract | We study parametric down-conversion (PDC) of optical laser radiation in the strongly frequency non-degenerate regime which is promising for the generation of quantum-correlated pairs of extremely different spectral ranges, the optical and the terahertz (THz) ones. The possibility to detect tenuous THz-frequency photon fluxes generated under low-gain spontaneous PDC is demonstrated using a hot electron bolometer. Then experimental dependences of the THz radiation power on the detection angle and on the pump intensity are analyzed. | ||||
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| ISSN | 0146-9592 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:30821747 | Approved | no | ||
| Call Number | Serial | 1801 | |||
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| Author | Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V. | ||||
| Title | Development of disordered ultra-thin superconducting vanadium nitride films | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. 8th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 8th Int. Conf. Photonics and Information Optics |
| Volume | Issue | Pages | 425-426 | ||
| Keywords | VN films | ||||
| Abstract | We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| ISSN | ISBN | 978-5-7262-2536-4 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf | Approved | no | ||
| Call Number | Serial | 1802 | |||
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| Author | Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. | ||||
| Title | Characterization of topologies of superconducting photon number resolving detectors | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. 8th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 8th Int. Conf. Photonics and Information Optics |
| Volume | Issue | Pages | 465-466 | ||
| Keywords | PNR SSPD | ||||
| Abstract | Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| ISSN | ISBN | 978-5-7262-2536-4 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf | Approved | no | ||
| Call Number | Serial | 1803 | |||
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| Author | Мошкова, М. А.; Дивочий, А. В.; Морозов, П. В.; Антипов, А. В.; Вахтомин, Ю. Б.; Смирнов, К. В. | ||||
| Title | Оценка статистики распределения фотонов с использованием многоэлементного сверхпроводникового однофотонного детектора | Type | Conference Article | ||
| Year | 2019 | Publication | Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского | Abbreviated Journal | |
| Volume | Issue | Pages | 201-202 | ||
| Keywords | SSPD | ||||
| Abstract | Проведен сравнительный анализ топологий сверхпроводниковых однофотонных детекторов с способностью к разрешению до четырёх фотонов в коротком импульсе ИК излучения. Получен детектор, с системной квантовой эффективностью ~85% на λ=1550 нм. Продемонстрирована возможность его использования для распределения числа фотонов импульсного источника излучения. | ||||
| Address | Москва | ||||
| Corporate Author | Thesis | ||||
| Publisher | МИЭМ НИУ ВШЭ | Place of Publication | Editor |
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1804 | |||
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| Author | Золотов, Ф. И.; Смирнов, К. В. | ||||
| Title | Особенности осаждения разупорядоченных сверхтонких плёнок нитрида ванадия | Type | Conference Article | ||
| Year | 2019 | Publication | Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского | Abbreviated Journal | |
| Volume | Issue | Pages | 204-205 | ||
| Keywords | VN films | ||||
| Abstract | В работе изучены особенности роста сверхтонких плёнок нитрида ванадия толщиной ~10 нм. Обнаружено, что при изменении температуры подложки и общего давления газов в процессе осаждения плёнок меняется значение их поверхностного сопротивления вблизи перехода к сверхпроводящему состоянию. | ||||
| Address | Москва | ||||
| Corporate Author | Thesis | ||||
| Publisher | МИЭМ НИУ ВШЭ | Place of Publication | Editor |
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1805 | |||
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| Author | Kuznetsov, K. A.; Kornienko, V. V.; Vakhtomin, Y. B.; Pentin, I. V.; Smirnov, K. V.; Kitaeva, G. K. | ||||
| Title | Generation and detection of optical-terahertz biphotons via spontaneous parametric downconversion | Type | Conference Article | ||
| Year | 2018 | Publication | Proc. ICLO | Abbreviated Journal | Proc. ICLO |
| Volume | Issue | Pages | 303 | ||
| Keywords | NbN HEB applications | ||||
| Abstract | We study spontaneous parametric downconversion (SPDC) in the strongly non-degenerate regime when the idler wave hits the terahertz range. By using the hot-electron bolometer, for the first time the SPDC-generated idler-wave photons were directly detected in the terahertz frequency range. Spectrum of corresponding signal photons was measured using standard technique by the CCD camera. Possible applications of correlated optical-terahertz biphotons are discussed. | ||||
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| Area | Expedition | Conference | International Conference Laser Optics | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1806 | |||
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