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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. | ||||
Title | Intense electromagnetic radiation heating of superconductor electrons in resistive state | Type | Journal Article | ||
Year | 1988 | Publication | Fizika Nizkikh Temperatur | Abbreviated Journal | Fizika Nizkikh Temperatur |
Volume | 14 | Issue | 7 | Pages | 753-763 |
Keywords | Nb HEB | ||||
Abstract | An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1697 | |||
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Author | Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. | ||||
Title | Capture of free holes by charged acceptors in uniaxially deformed Ge | Type | Journal Article | ||
Year | 1988 | Publication | Fizika i Tekhnika Poluprovodnikov | Abbreviated Journal | Fizika i Tekhnika Poluprovodnikov |
Volume | 22 | Issue | 3 | Pages | 540-543 |
Keywords | Ge, free holes, capture | ||||
Abstract | Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. | ||||
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Language | Russian | Summary Language | Original Title | ||
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Notes | Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge | Approved | no | ||
Call Number | Serial | 1698 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I. | ||||
Title | Submillimeter backward-wave-tube spectrometer-relaxometer | Type | Journal Article | ||
Year | 1987 | Publication | Pribory i Tekhnika Eksperimenta | Abbreviated Journal | Pribory i Tekhnika Eksperimenta |
Volume | 30 | Issue | 4 | Pages | 131-137 |
Keywords | BWO, applications | ||||
Abstract | A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops. | ||||
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Language | Russian | Summary Language | Original Title | ||
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Notes | Approved | no | |||
Call Number | Serial | 1699 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N. | ||||
Title | Effect of electromagnetic radiation on a superconductor in a magnetic field | Type | Conference Article | ||
Year | 1988 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Volume | 52 | Issue | 3 | Pages | 449-451 |
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Abstract | The effect of electromagnetic radiation on thin superconducting films of Nb with a large number of static defects is investigated experimentally for the case where the film is in the resistive state due to an applied magnetic field and transport current. The results obtained are found to be well described by a model of spatially homogeneous electron heating. It is noted that the results obtained here for Nb films are also valid for Al, NbN, and MoRe films. | ||||
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Language | Russian | Summary Language | Original Title | ||
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ISSN | 0367-6765 | ISBN | Medium | ||
Area | Expedition | Conference | 4th Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Tallin, Estonian SSR, Apr. 1987 | ||
Notes | Approved | no | |||
Call Number | Serial | 1702 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. | ||||
Title | Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum | Type | Journal Article | ||
Year | 1987 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 46 | Issue | 5 | Pages | 237-238 |
Keywords | YBCO HTS detectors | ||||
Abstract | For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. | ||||
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Call Number | Serial | 1703 | |||
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Author | Gershenzon, Ye. M.; Goltsman, G. N.; Yelantyev, A. I.; Petrova, Ye. B.; Ptitsina, N. G.; Filatov, V. S. | ||||
Title | Lecture demonstrations of properties of superconductors and liquid helium | Type | Journal Article | ||
Year | 1987 | Publication | USSR Rept Phys. Math. JPRS UPM | Abbreviated Journal | USSR Rept Phys. Math. JPRS UPM |
Volume | 24 | Issue | 7 | Pages | 51 |
Keywords | demonstrations, lections | ||||
Abstract | New demonstrations for low temperature physics courses are described. Two transparent Dewar vacuum flasks fitting one inside the other with the external flask for nitrogen and the internal flask for helium are used. The helium temperature can be regulated in the 4.2 to 1.6 K range and the effects of reducing helium to the superfluid state at 2.17 K can be shown: boiling abruptly stops and superfluid flow appears. In order to show the electric and magnetic characteristics of superconductivity, a superconducting NbTi solenoid containing nonsuperconducting wire and germanium and superconducting Nb materials with different critical temperatures is placed in the helium refrigerant vessel. The fall of the resistance at the critical temperatures can be shown. In order to show magnetic field and superconductive current flow properties a shunt of superconductive material is connected in parallel to the coil and is enclosed in a teflon container with a heater which can vary its temperature. When it is heated and not superconductive, magnetic field effects can be demonstrated and when it is unheated and superconducting a continuous current can be demonstrated. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1704 | |||
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Author | Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. | ||||
Title | The excitonic Zeeman effect in uniaxially-strained germanium | Type | Journal Article | ||
Year | 1987 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
Volume | 65 | Issue | 6 | Pages | 1233-1241 |
Keywords | Ge, Zeeman effect | ||||
Abstract | We have carried out a high-resolution spectroscopic study of the absorption of submillimeter radiation by free excitons in germanium compressed along the [ 1 11 ] axis in a magnetic field parallel to the compression axis. In particular, we studied the splitting of the 1s- 2p transition in fields up to 6 kOe at T = 1.6 K, and observed a complex pattern in the Zeeman splitting which we believe is related to the effect of thermal motion of the excitons in a magnetic field on their internal structure (the magneto-Stark effect). The calculated submillimeter spectrum of excitons agrees with the experimental data. We predict that in a magnetic field the energy of the 2p, term is a minimum at a finite value of the exciton momentum perpendicular to the field-that is, the energy minimum forms a ring in momentum space. It follows that the density of states for this term must be a nonmonotonic function of the energy. A theory is developed of analogous phenomena in positronium. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1705 | |||
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Author | Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V. | ||||
Title | Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound | Type | Journal Article | ||
Year | 1987 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 46 | Issue | 6 | Pages | 285-287 |
Keywords | YBCO HTS HEB | ||||
Abstract | For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1706 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. | ||||
Title | Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium | Type | Journal Article | ||
Year | 1986 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
Volume | 64 | Issue | 4 | Pages | 889-897 |
Keywords | Ge, trapping of free carriers | ||||
Abstract | Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3). | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1707 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
Title | Observation of the free-exciton spectrum at submillimeter wavelengths | Type | Journal Article | ||
Year | 1972 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 16 | Issue | 4 | Pages | 161-162 |
Keywords | Ge, energy spectrum, free excitons | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1736 | |||
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Author | Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Кагане, М. Л.; Мултановский, В. В.; Птицина, Н. Г. | ||||
Title | Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках | Type | Journal Article | ||
Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
Volume | 17 | Issue | 8 | Pages | 1430-1437 |
Keywords | BWO spectroscopy, pure semiconductors, residual impurities | ||||
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Language | Russian | Summary Language | Original Title | ||
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Notes | Duplicated as 1714 | Approved | no | ||
Call Number | Serial | 1712 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D. | ||||
Title | Submillimeter backward wave tube spectrometer for measuring superconducting film transmission | Type | Journal Article | ||
Year | 1983 | Publication | Pribory i Tekhnika Eksperimenta | Abbreviated Journal | Pribory i Tekhnika Eksperimenta |
Volume | 26 | Issue | 5 | Pages | 134-137 |
Keywords | BWO spectroscopy, spectrometer, transmission | ||||
Abstract | A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV | ||||
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Language | Russian | Summary Language | Original Title | ||
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ISSN | 0032-8162 | ISBN | Medium | ||
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Notes | Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок | Approved | no | ||
Call Number | Serial | 1713 | |||
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Author | Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
Title | Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors | Type | Journal Article | ||
Year | 1983 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
Volume | 17 | Issue | 8 | Pages | 908-913 |
Keywords | BWO spectroscopy, pure semiconductors, residual impurities | ||||
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Notes | Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках | Approved | no | ||
Call Number | Serial | 1714 | |||
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Author | Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
Title | Kinetics of submillimeter impurity and exciton photoconduction in Ge | Type | Journal Article | ||
Year | 1982 | Publication | Optics and Spectroscopy | Abbreviated Journal | Optics and Spectroscopy |
Volume | 52 | Issue | 4 | Pages | 454-455 |
Keywords | Ge, exciton photoconduction | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1715 | |||
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Author | Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
Title | Heating of quasiparticles in a superconducting film in the resistive state | Type | Journal Article | ||
Year | 1981 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 34 | Issue | 5 | Pages | 268-271 |
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Call Number | Serial | 1716 | |||
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Author | Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
Title | Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state | Type | Journal Article | ||
Year | 1982 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 36 | Issue | 7 | Pages | 296-299 |
Keywords | HEB | ||||
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Notes | Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии | Approved | no | ||
Call Number | Serial | 1717 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
Title | Cross section for binding of free carriers into excitons in germanium | Type | Journal Article | ||
Year | 1981 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 33 | Issue | 11 | Pages | 574 |
Keywords | Ge, excitons, photoconductivity | ||||
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Call Number | Serial | 1718 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
Title | Population and lifetime of excited states of shallow impurities in Ge | Type | Journal Article | ||
Year | 1979 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
Volume | 49 | Issue | 2 | Pages | 355-362 |
Keywords | Ge, photothermal ionization, shallow impurities | ||||
Abstract | An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1719 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. | ||||
Title | Capture of photoexcited carriers by shallow impurity centers in germanium | Type | Journal Article | ||
Year | 1979 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
Volume | 50 | Issue | 4 | Pages | 728-734 |
Keywords | Ge, photoexcited carriers, shallow impurity centers | ||||
Abstract | Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1720 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. | ||||
Title | Observation of free carrier resonances in p-type germanium at submillimeter wavelengths | Type | Journal Article | ||
Year | 1978 | Publication | Sov. Phys. Solid State | Abbreviated Journal | Sov. Phys. Solid State |
Volume | 20 | Issue | 4 | Pages | 573-579 |
Keywords | p-Ge, free carriers, resonances | ||||
Abstract | The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1721 | |||
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Author | Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M. | ||||
Title | Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it | Type | Conference Article | ||
Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Volume | 42 | Issue | 6 | Pages | 1142-1148 |
Keywords | energy spectrum, Ge, magnetic field | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1722 | |||
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Author | Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. | ||||
Title | Population of excited-states of small admixtures in germanium | Type | Conference Article | ||
Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Volume | 42 | Issue | 6 | Pages | 1154-1159 |
Keywords | Ge, excited states, admixtures | ||||
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Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia | Place of Publication | Editor | ||
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Notes | Approved | no | |||
Call Number | Serial | 1723 | |||
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Author | Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. | ||||
Title | Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors | Type | Conference Article | ||
Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Volume | 42 | Issue | 6 | Pages | 1231-1234 |
Keywords | spectrum, semiconductors, admixtures, strong magnetic-field | ||||
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Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia | Place of Publication | Editor | ||
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Notes | Approved | no | |||
Call Number | blagosklonskaya1978effect | Serial | 1724 | ||
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Author | Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. | ||||
Title | Effect of a strong magnetic field on the spectrum of donors in InSb | Type | Journal Article | ||
Year | 1978 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
Volume | 11 | Issue | 12 | Pages | 1395-1397 |
Keywords | InSb, spectrum of donors, strong magnetic field | ||||
Abstract | |||||
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Notes | Approved | no | |||
Call Number | Serial | 1725 | |||
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Author | Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. | ||||
Title | Carrier lifetime in excited states of shallow impurities in germanium | Type | Journal Article | ||
Year | 1977 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 25 | Issue | 12 | Pages | 539-543 |
Keywords | Ge, shallow impurities, excited states | ||||
Abstract | |||||
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Notes | Approved | no | |||
Call Number | Serial | 1726 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. | ||||
Title | Energy spectrum of acceptors in germanium and its response to a magnetic field | Type | Journal Article | ||
Year | 1977 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
Volume | 45 | Issue | 4 | Pages | 769-776 |
Keywords | p-Ge, photoconductivity, energy spectrum, magnetic field | ||||
Abstract | We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1727 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. | ||||
Title | Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field | Type | Journal Article | ||
Year | 1977 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
Volume | 45 | Issue | 3 | Pages | 555-565 |
Keywords | Ge, GaAs, magnetic field, donors, energy spectrum | ||||
Abstract | The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1728 | |||
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Author | Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. | ||||
Title | Effect of a high magnetic field on the spectrum of donors in InSb | Type | Journal Article | ||
Year | 1977 | Publication | Fizika i Tekhnika Poluprovodnikov | Abbreviated Journal | Fizika i Tekhnika Poluprovodnikov |
Volume | 11 | Issue | 12 | Pages | 2373-2375 |
Keywords | InSb, energy spectrum, donors, high magnetic field | ||||
Abstract | |||||
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Language | Russian | Summary Language | Original Title | ||
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Notes | Воздействие сильного магнитного поля на спектр доноров в InSb | Approved | no | ||
Call Number | Serial | 1729 | |||
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Author | Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. | ||||
Title | Intervalley cyclotron-impurity resonance of electrons in n-Ge | Type | Journal Article | ||
Year | 1976 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 24 | Issue | 3 | Pages | 125-128 |
Keywords | n-Ge, cyclotron-impurity resonance | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1730 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
Title | Investigation of free excitons in Ge and their condensation at submillimeter wavelengths | Type | Journal Article | ||
Year | 1976 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
Volume | 43 | Issue | 1 | Pages | 116-122 |
Keywords | Ge, free excitons | ||||
Abstract | Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1731 | |||
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Author | Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. | ||||
Title | Investigation of population and ionization of donor excited states in Ge | Type | Conference Article | ||
Year | 1976 | Publication | Physics of Semiconductors | Abbreviated Journal | Physics of Semiconductors |
Volume | Issue | Pages | 631-634 | ||
Keywords | Ge, donor excited states | ||||
Abstract | |||||
Address | Amsterdam | ||||
Corporate Author | Thesis | ||||
Publisher | North-Holland Publishing Co. | Place of Publication | Editor | ||
Language | Summary Language | Original Title | |||
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Notes | Approved | no | |||
Call Number | Serial | 1732 | |||
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Author | Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. | ||||
Title | Investigation of excited donor states in GaAs | Type | Journal Article | ||
Year | 1974 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
Volume | 7 | Issue | 10 | Pages | 1248-1250 |
Keywords | GaAs, excited donor states | ||||
Abstract | |||||
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Publisher | Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa | Place of Publication | Editor | ||
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Notes | Approved | no | |||
Call Number | Serial | 1733 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. | ||||
Title | Energy spectrum of free excitons in germanium | Type | Journal Article | ||
Year | 1973 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 18 | Issue | 3 | Pages | 93 |
Keywords | Ge, free excitons, energy spectrum | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1734 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
Title | Submillimeter spectroscopy of semiconductors | Type | Journal Article | ||
Year | 1973 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
Volume | 37 | Issue | 2 | Pages | 299-304 |
Keywords | semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons | ||||
Abstract | The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1735 | |||
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Author | Goltsman, G. | ||||
Title | Simple method for stabilizing power of submillimetric spectrometer | Type | Journal Article | ||
Year | 1972 | Publication | Pribory i Tekhnika Eksperimenta | Abbreviated Journal | Pribory i Tekhnika Eksperimenta |
Volume | Issue | 1 | Pages | 136 | |
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Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia | Place of Publication | Editor | ||
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Notes | Approved | no | |||
Call Number | Serial | 1738 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. | ||||
Title | Binding energy of a carrier with a neutral impurity atom in germanium and in silicon | Type | Journal Article | ||
Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 14 | Issue | 5 | Pages | 185-186 |
Keywords | Ge, Si, neutral impurity atom, binding energy | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1739 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N. | ||||
Title | Transitions of electrons between excited states of donors in germanium | Type | Journal Article | ||
Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 14 | Issue | 2 | Pages | 63-65 |
Keywords | Ge, donors, excited states | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1740 | |||
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Author | Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. | ||||
Title | Germanium hot-electron narrow-band detector | Type | Journal Article | ||
Year | 1971 | Publication | Sov. Radio Engineering And Electronic Physics | Abbreviated Journal | Sov. Radio Engineering And Electronic Physics |
Volume | 16 | Issue | 8 | Pages | 1346 |
Keywords | Ge HEB detectors | ||||
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Publisher | Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 | Place of Publication | Editor | ||
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Notes | Approved | no | |||
Call Number | Serial | 1741 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. | ||||
Title | Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium | Type | Journal Article | ||
Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 14 | Issue | 6 | Pages | 241 |
Keywords | Ge, gamma irradiation, defects, impurities | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1742 | |||
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Author | Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory | ||||
Title | Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors | Type | Abstract | ||
Year | 2020 | Publication | Graphene and 2dm Virt. Conf. | Abbreviated Journal | Graphene and 2DM Virt. Conf. |
Volume | Issue | Pages | |||
Keywords | single layer graphene, SLG, CVD, plasmons, FET | ||||
Abstract | Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464. | ||||
Address | Grenoble, France | ||||
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Area | Expedition | Conference | Graphene and 2dm Virtual Conference & Expo | ||
Notes | Approved | no | |||
Call Number | Serial | 1743 | |||
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Author | Goltsman, Gregory | ||||
Title | Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors | Type | Conference Article | ||
Year | 2017 | Publication | 16th ISEC | Abbreviated Journal | 16th ISEC |
Volume | Issue | Pages | Th-I-QTE-03 (1 to 3) | ||
Keywords | waveguide SSPD, SNSPD | ||||
Abstract | We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chipquantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. | ||||
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Area | Expedition | Conference | IEEE/CSC & ESAS Superconductivity News Forum | ||
Notes | Approved | no | |||
Call Number | Serial | 1745 | |||
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Author | Gol’tsman, G.N. | ||||
Title | Overview of recent results for superconducting NbN terahertz and optical detectors and mixers | Type | Miscellaneous | ||
Year | 2014 | Publication | SM2 – Seminar on Terahertz Photonics | Abbreviated Journal | |
Volume | Issue | Pages | 0562 | ||
Keywords | NbN SSPD, SNSPD, HEB | ||||
Abstract | We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1746 | |||
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Author | Pentin, Ivan; Finkel, Matvey; Maslennikov, Sergey; Vakhtomin, Yuri; Smirnov, Konstantin; Kaurova, Nataliya; Goltsman, Gregory | ||||
Title | Superconducting hot-electron-bolometer mixers for the mid-IR | Type | Journal Article | ||
Year | 2017 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
Volume | Issue | 10 | Pages | ||
Keywords | IR NbN HEB mixers | ||||
Abstract | The work presents the result of development of the NbN superconducting hot-electron-bolometer (HEB) mixer. The sensitive element of the mixer is directly coupled to mid-IR radiation, and doesn’t have planar metallic antenna. Investigations of noise characteristics of NbN HEB mixer were performed at the frequency 28.4 THz (λ = 10.6 µm) by using gas-discharge CW CO2-laser without consideration of optical and electrical losses in the heterodyne receiver. The noise temperature of NbN HEB mixer with the size of the sensitive element 10 µm × 10 µm was 2320 K (~ 1.5hν/kB) at the heterodyne frequency of 28.4 THz. The noise temperature was determined by measuring the Y-factor taking into account the term which describes fluctuations of zero-point oscillations in accordance with the fluctuation-dissipation theorem of Calle-Welton. Isothermal method was used to estimate the absorbed heterodyne radiation power which was 9 µW at the optimal operating point for the minimum noise temperature of NbN HEB mixer. | ||||
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Language | Russian | Summary Language | Original Title | ||
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ISSN | 1684-1719 | ISBN | Medium | ||
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Notes | http://jre.cplire.ru/jre/oct17/9/abstract.html (Russian) Гетеродинный приемник со сверхпроводниковым смесителем на эффекте электронного разогрева для среднего инфракрасного диапазона | Approved | no | ||
Call Number | Serial | 1747 | |||
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Author | Averkin, A. S.; Shishkin, A. G.; Chichkov, V. I.; Voronov, B. M.; Goltsman, G. N.; Karpov, A.; Ustinov, A. V. | ||||
Title | Tunable frequency-selective surface based on superconducting split-ring resonators | Type | Conference Article | ||
Year | 2014 | Publication | 8th Metamaterials | Abbreviated Journal | 8th Metamaterials |
Volume | Issue | Pages | |||
Keywords | superconducting split-ring resonators | ||||
Abstract | We study a possibility to use the 2D superconducting metamaterial as a tunable frequency-selective surface (FSS). The proposed FSS is made of sub-wavelength size (l/14) metamaterial unit cells, where a split-ring resonator is embedded in a small iris aperture in a metal plane. The split-ring resonator is made of NbN film, and its resonance frequency is tuned by the temperature of the sample, changing the kinetic inductance of NbN film. The Ansoft HFSS simulation predicts the FSS tuning range of about 10-20 %. The developed superconducting FSS may be used as a tunable band-pass filter or modulator. | ||||
Address | Copenhagen, Denmark | ||||
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Area | Expedition | Conference | 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics – Metamaterials | ||
Notes | Approved | no | |||
Call Number | Serial | 1749 | |||
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Author | Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, Roman; Korneev, A.; Kouminov, P.; Okunev, O.; Chulkova, G.; Gol'tsman, G. | ||||
Title | Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range | Type | Miscellaneous | ||
Year | 2004 | Publication | ResearchGate | Abbreviated Journal | ResearchGate |
Volume | Issue | Pages | |||
Keywords | NbN SSPD, SNSPD | ||||
Abstract | We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices. | ||||
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Notes | Not attributed to any publisher! File name: PR9VervekinSfin_f.doc; Author: JAOLEARY; Last modification date: 2004-02-26 | Approved | no | ||
Call Number | Serial | 1751 | |||
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Author | Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. | ||||
Title | Механизм преобразования частоты в n-InSb-смесителе | Type | Journal Article | ||
Year | 1991 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
Volume | 25 | Issue | 11 | Pages | 1986-1998 |
Keywords | n-InSb mixer | ||||
Abstract | Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн. | ||||
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Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.; Гусинский, Э. Н.; Литвак-Горская, Л. Б. | ||||
Title | Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла | Type | Journal Article | ||
Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
Volume | 24 | Issue | 12 | Pages | 2145-2150 |
Keywords | Hall constant, concentration of impurities, p-Si | ||||
Abstract | На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая. | ||||
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Call Number | Serial | 1754 | |||
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Author | Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. | ||||
Title | Влияние магнитного поля на захват свободных носителей мелкими примесями в Ge | Type | Journal Article | ||
Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
Volume | 24 | Issue | 10 | Pages | 1881-1883 |
Keywords | impurities, photoconductivity, Ge, capture of free carriers, magnetic field | ||||
Abstract | Цель настоящей работы — измерение кинетики примесной фотопроводимости в квантующих магнитных полях. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1755 | |||
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Author | Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б. | ||||
Title | Кинетические явления в компенсированном n-InSb при низких температурах | Type | Journal Article | ||
Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
Volume | 24 | Issue | 1 | Pages | 3-24 |
Keywords | compensated n-InSb, impurities | ||||
Abstract | Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb. | ||||
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Call Number | Serial | 1756 | |||
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Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. | ||||
Title | Особенности температурной зависимости холловской подвижности в легированных и некомпенсированных полупроводниках | Type | Journal Article | ||
Year | 1989 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
Volume | 23 | Issue | 2 | Pages | 338-345 |
Keywords | weakly compensated Si, Ge, doped, Hall mobility | ||||
Abstract | На примере легированного и слабо компенсированного Si⟨B⟩ проведены исследования особенностей температурной зависимости подвижности при различных механизмах рассеяния. Уточнен метод определения концентрации компенсирующей примеси по μI(T). Полученные результаты обсуждаются и для Ge. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1758 | |||
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Author | Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. | ||||
Title | Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ | Type | Journal Article | ||
Year | 1986 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
Volume | 20 | Issue | 1 | Pages | 99-103 |
Keywords | n-Ge, Hubbard upper zone conductivity, negative magnetoresistance | ||||
Abstract | В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1759 | |||
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Author | Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. | ||||
Title | Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца | Type | Journal Article | ||
Year | 1985 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
Volume | 19 | Issue | 9 | Pages | 1696-1698 |
Keywords | uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1760 | |||
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Author | Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. | ||||
Title | О механизме динамического сужения линии ЭПР доноров фосфора в кремнии | Type | Journal Article | ||
Year | 1984 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
Volume | 18 | Issue | 3 | Pages | 421-425 |
Keywords | Si, phosphorus donors, EPR | ||||
Abstract | Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1761 | |||
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Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. | ||||
Title | Об одном способе определения концентрации глубоких примесей в германии | Type | Journal Article | ||
Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
Volume | 17 | Issue | 10 | Pages | 1896-1898 |
Keywords | Ge, deep impurities | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1762 | |||
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Author | Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. | ||||
Title | Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда | Type | Journal Article | ||
Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
Volume | 17 | Issue | 10 | Pages | 1873-1876 |
Keywords | compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance | ||||
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Call Number | Serial | 1763 | |||
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Author | Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. | ||||
Title | О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси | Type | Journal Article | ||
Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
Volume | 17 | Issue | 3 | Pages | 499-501 |
Keywords | shallow neutral impurities, capture, inverse distribution function, Si | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1764 | |||
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Author | Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
Title | Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons | Type | Journal Article | ||
Year | 1975 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
Volume | 40 | Issue | 2 | Pages | 311-315 |
Keywords | Ge, cyclotron resonance | ||||
Abstract | Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1768 | |||
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Author | Goltsman, Gregory N. | ||||
Title | Development and applications of terahertz hot electron bolometers | Type | Abstract | ||
Year | 2021 | Publication | 1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments | Abbreviated Journal | 1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments |
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Abstract | The development of techniques and technologies for the deposition of ultrathin superconducting films, the creation of superconducting structures on a nanometer scale is the basis of significant progress in the field of superconducting receiving systems. Ultrathin NbN films are the basis for a wide range of record-breaking hot electron devices: direct and heterodyne terahertz detectors. Terahertz receivers are especially in demand in high-resolution spectroscopy for astronomical, atmospheric, and medical research. HEB receivers are widely used in terahertz radio astronomy. For example, the Dutch SRON Institute is preparing a project for the GUSTO hot air balloon telescope with a HEB mixer array at 1.4 THz and 1.9 THz. A 5-meter Chinese terahertz telescope DATE5 with HEB mixers at 1.4 THz is installed at the South Pole. The Stratospheric Observatory (SOFIA) uses HEB mixer matrices in the GREAT instrument operating in the 1.2 – 4.7 THz range. It is planned to implement the international project Origins Space Telescope (OST) in the far infrared region based on HEB receivers. The Japanese project Smiles-2 will allow measurements at 1.8 THz in the upper layers of the stratosphere and mesosphere. The development of the Millimetron space observatory continues in Russia. | ||||
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Area | Expedition | Conference | First Moscow International Conference on Submillimeter and Millimeter Astronomy: Objectives and Instruments, Astro Space Center, Moscow, 12-16 April 2021, id. 2 | ||
Notes | Downloaded from https://millimetron.ru/conference_2021/Goltsman.pdf; Author: Sergey; Last modification: 2021-04-14 | Approved | no | ||
Call Number | Serial | 1771 | |||
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Author | Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
Title | Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions | Type | Journal Article | ||
Year | 1976 | Publication | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников | Abbreviated Journal | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume | 10 | Issue | Pages | 1379-1383 | |
Keywords | Ge, cyclotron resonance, charged impurities, | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1772 | |||
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Author | Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. | ||||
Title | Absorption spectra in electron transitions between excited states of impurities in germanium | Type | Journal Article | ||
Year | 1975 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 22 | Issue | 4 | Pages | 95-97 |
Keywords | Ge, impurities, excited states, absorption spectra | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1773 | |||
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Author | Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
Title | Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields | Type | Journal Article | ||
Year | 1972 | Publication | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников | Abbreviated Journal | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume | 6 | Issue | Pages | 362-363 | |
Keywords | Ge, cyclotron resonance, quantizing magnetic fields | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1774 | |||
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Author | Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V. | ||||
Title | Development of disordered ultra-thin superconducting vanadium nitride films | Type | Conference Article | ||
Year | 2019 | Publication | Proc. 8th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 8th Int. Conf. Photonics and Information Optics |
Volume | Issue | Pages | 425-426 | ||
Keywords | VN films | ||||
Abstract | We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained. | ||||
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Language | Russian | Summary Language | Original Title | ||
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ISSN | ISBN | 978-5-7262-2536-4 | Medium | ||
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Notes | http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf | Approved | no | ||
Call Number | Serial | 1802 | |||
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Author | Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. | ||||
Title | Characterization of topologies of superconducting photon number resolving detectors | Type | Conference Article | ||
Year | 2019 | Publication | Proc. 8th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 8th Int. Conf. Photonics and Information Optics |
Volume | Issue | Pages | 465-466 | ||
Keywords | PNR SSPD | ||||
Abstract | Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated. | ||||
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Language | Russian | Summary Language | Original Title | ||
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ISSN | ISBN | 978-5-7262-2536-4 | Medium | ||
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Notes | http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf | Approved | no | ||
Call Number | Serial | 1803 | |||
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Author | Мошкова, М. А.; Дивочий, А. В.; Морозов, П. В.; Антипов, А. В.; Вахтомин, Ю. Б.; Смирнов, К. В. | ||||
Title | Оценка статистики распределения фотонов с использованием многоэлементного сверхпроводникового однофотонного детектора | Type | Conference Article | ||
Year | 2019 | Publication | Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского | Abbreviated Journal | |
Volume | Issue | Pages | 201-202 | ||
Keywords | SSPD | ||||
Abstract | Проведен сравнительный анализ топологий сверхпроводниковых однофотонных детекторов с способностью к разрешению до четырёх фотонов в коротком импульсе ИК излучения. Получен детектор, с системной квантовой эффективностью ~85% на λ=1550 нм. Продемонстрирована возможность его использования для распределения числа фотонов импульсного источника излучения. | ||||
Address | Москва | ||||
Corporate Author | Thesis | ||||
Publisher | МИЭМ НИУ ВШЭ | Place of Publication | Editor | ||
Language | Russian | Summary Language | Original Title | ||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1804 | |||
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Author | Золотов, Ф. И.; Смирнов, К. В. | ||||
Title | Особенности осаждения разупорядоченных сверхтонких плёнок нитрида ванадия | Type | Conference Article | ||
Year | 2019 | Publication | Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского | Abbreviated Journal | |
Volume | Issue | Pages | 204-205 | ||
Keywords | VN films | ||||
Abstract | В работе изучены особенности роста сверхтонких плёнок нитрида ванадия толщиной ~10 нм. Обнаружено, что при изменении температуры подложки и общего давления газов в процессе осаждения плёнок меняется значение их поверхностного сопротивления вблизи перехода к сверхпроводящему состоянию. | ||||
Address | Москва | ||||
Corporate Author | Thesis | ||||
Publisher | МИЭМ НИУ ВШЭ | Place of Publication | Editor | ||
Language | Russian | Summary Language | Original Title | ||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1805 | |||
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Author | Райтович, А. А.; Пентин, И. В.; Золотов, Ф. И.; Селезнев, В. А.; Вахтомин, Ю. Б.; Смирнов, К. В. | ||||
Title | Время энергетической релаксации электронов в сверхпроводниковых VN наноструктурах | Type | Conference Article | ||
Year | 2018 | Publication | Сборник трудов 13 Всероссийской конференции молодых ученых | Abbreviated Journal | |
Volume | Issue | Pages | 236-238 | ||
Keywords | VN films | ||||
Abstract | |||||
Address | Саратовский филиал ИРЭ им. В.А. Котельникова РАН | ||||
Corporate Author | Thesis | ||||
Publisher | Техно-Декор | Place of Publication | Editor | ||
Language | Russian | Summary Language | Original Title | ||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | Наноэлектроника, нанофотоника и нелинейная физика | ||
Notes | http://nnnph.ru/data/documents/Sborni-trudov-NNNF-2018.pdf | Approved | no | ||
Call Number | Serial | 1807 | |||
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Author | Zolotov, P. I.; Vakhtomin, Yu. B.; Divochiy, A. V.; Seleznev, V. A.; Smirnov, K. V. | ||||
Title | Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons | Type | Journal Article | ||
Year | 2016 | Publication | Proc. 5th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 5th Int. Conf. Photonics and Information Optics |
Volume | Issue | Pages | 115-116 | ||
Keywords | NbN SSPD | ||||
Abstract | This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures. | ||||
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Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Russian | Summary Language | Original Title | ||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | 978-5-7262-2215-8 | Medium | ||
Area | Expedition | Conference | |||
Notes | http://fioconf.mephi.ru/files/2015/12/FIO2016-Sbornik.pdf Разработка технологии создания резонаторных структур для увеличения квантовой эффективности NBN детекторов ИК-фотонов | Approved | no | ||
Call Number | Serial | 1811 | |||
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Author | Корнеев, А. А.; Окунев, О. В.; Чулкова, Г. М.; Смирнов, К. В.; Милостная, И. И.; Минаева, О. В.; Корнеева, Ю. П.; Каурова, Н. С.; Воронов, Б. М.; Гольцман, Г. Н. | ||||
Title | Спонтанные и фотоиндуцированные резистивные состояния в узких сверхпроводящих NbN полосках | Type | Book Whole | ||
Year | 2015 | Publication | Abbreviated Journal | ||
Volume | Issue | Pages | |||
Keywords | NbN films | ||||
Abstract | Монография посвящена актуальной проблеме современной фотоники: разработке высокочувствительных и быстродействующих сверхпроводниковых однофотонных детекторов на основе тонкой пленки NbN. В работе исследуются неравновесные процессы, протекающие в тонкой сверхпроводящей пленке после поглощения инфракрасного фотона и приводящие к возникновению резистивного состояния. На этих процессах основан механизм фотоотклика исследуемого в работе однофотонного детектора. В частности, исследуются зависимости квантовой эффективности и скорости темнового счета от геометрических параметров детектора: толщины пленки, ширины полоски, а также от величины транспортного тока детектора. Монография предназначена для студентов старших курсов, аспирантов и начинающих исследователей, работающих в области сверхпроводниковой наноэлектроники и радиофизики. | ||||
Address | Москва | ||||
Corporate Author | Thesis | ||||
Publisher | МПГУ | Place of Publication | Editor | ||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | 978-5-4263-0269-3 | Medium | ||
Area | Expedition | Conference | |||
Notes | УДК: 535; Число страниц: 108 | Approved | no | ||
Call Number | Serial | 1812 | |||
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Author | Smirnov, K.; Vachtomin, Y.; Divochiy, A.; Antipov, A.; Goltsman, G. | ||||
Title | The limitation of noise equivalent power by background radiation for infrared superconducting single photon detectors coupled to standard single mode optical fibers | Type | Journal Article | ||
Year | 2015 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
Volume | Issue | 5 | Pages | ||
Keywords | NbN SSPD | ||||
Abstract | We investigated the minimum level of the dark count rates and noise equivalent power of superconducting single photon detectors coupled to standard single mode optical fibers. We found that background radiation limits the minimum level of the dark count rates. We also proposed the effective method for reducing background radiation out of the required spectral range of the detector. Measured noise equivalent power of detector reaches 8.9×10-19 W×Hz1/2 at a wavelength of 1.55 μm and quantum efficiency 35%. | ||||
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Language | Summary Language | Original Title | |||
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Notes | 14 pages | Approved | no | ||
Call Number | Serial | 1813 | |||
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Author | Смирнов, Константин Владимирович; Чулкова, Галина Меркурьевна; Вахтомин, Юрий Борисович; Корнеев, Александр Александрович; Окунев, Олег Валерьевич; Дивочий, Александр Валерьевич; Семенов, Александр Владимирович; Гольцман, Григорий Наумович | ||||
Title | Особенности разогрева и релаксации горячих электронов О-754 в тонкопленочных cверхпроводниковых наноструктурах и 2D полупроводниковых гетероструктурах при поглощении излучения инфракрасного и терагерцового диапазонов | Type | Book Whole | ||
Year | 2014 | Publication | Abbreviated Journal | ||
Volume | Issue | Pages | |||
Keywords | 2DEG | ||||
Abstract | В монографии рассмотрены основные особенности эффекта электронного разогрева в тонких сверхпроводниковых пленках и полупроводниковых гетеропереходах, возникающего при поглощении носителями заряда излучений терагерцового и инфракрасного диапазонов. Значительная часть монографии посвящена представлению современных достижений при использовании указанного эффекта для создания приемных устройств с рекордными характеристиками: терагерцовых гетеродинных и болометрических приемников на основе сверхпроводниковых и полупроводниковых структур; сверхпроводниковых приемников одиночных ИК фотонов. В работе также подробно рассмотрены основы современной сверхпроводниковой тонкопленочной технологии. Монография может быть полезна студентам старших курсов, аспирантам и начинающим исследователям, работающим в области физики твердого тела, оптики, радиофизики. |
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Address | Москва | ||||
Corporate Author | Thesis | ||||
Publisher | МПГУ | Place of Publication | Editor | ||
Language | Russian | Summary Language | Original Title | ||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | 978-5-4263-0145-0 | Medium | ||
Area | Expedition | Conference | |||
Notes | 240 страниц | Approved | no | ||
Call Number | Serial | 1814 | |||
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Author | Гольцман, Григорий Наумович; Корнеев, Александр Александрович; Антипов, Андрей Владимирович; Минаева, Ольга Вячеславовна; Дивочий, Александр Валерьевич; Антипов, Сергей Владимирович; Вахтомин, Юрий Борисович; Смирнов, Константин Владимирович | ||||
Title | Способ фильтрации фонового излучения инфракрасного диапазона | Type | Patent | ||
Year | 2014 | Publication | Abbreviated Journal | ||
Volume | Issue | RU 2510056 C1 | Pages | ||
Keywords | |||||
Abstract | Изобретение относится к способам уменьшения интенсивности фонового излучения инфракрасного диапазона. Способ фильтрации фонового излучения инфракрасного диапазона, падающего на сверхпроводниковый однофотонный детектор, включает передачу излучения инфракрасного диапазона с длиной волны 0,4-1,8 микрометров на сверхпроводниковый однофотонный детектор при помощи одномодового волокна, частично находящегося при температуре 4,0-4,4 К. При этом длина охлаждаемого участка одномодового волокна составляет 0,2-3,5 м. Технический результат заключается в повышении надежности работы фотонных детекторов. 2 з.п. ф-лы. | ||||
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Language | Summary Language | Original Title | |||
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ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1815 | |||
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Author | Антипов, Андрей Владимирович; Дивочий, Александр Валерьевич; Вахтомин, Юрий Борисович; Финкель, Матвей Ильич; Смирнов, Константин Владимирович | ||||
Title | Способ прецизионного позиционирования чувствительного элемента фотонного детектора | Type | Patent | ||
Year | 2014 | Publication | Abbreviated Journal | ||
Volume | Issue | RU 2506664 C1 | Pages | ||
Keywords | |||||
Abstract | Изобретение относится к способам, позволяющим производить совмещение фотонных детекторов относительно оптического излучения. Способ прецизионного позиционирования чувствительного элемента фотонного детектора относительно амплитудно-модулированного оптического излучения включает смещение чувствительного элемента фотонного детектора постоянным током с последующей регистрацией электрического сигнала, возникающего на контактах детектора на частоте модуляции излучения. Полученный при этом сигнал используют как параметр, определяющий качество позиционирования. Обеспечивается повышение технико-эксплуатационных характеристик детектора. | ||||
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Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1816 | |||
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Author | Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В. | ||||
Title | Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе | Type | Book Whole | ||
Year | 2012 | Publication | Abbreviated Journal | ||
Volume | Issue | Pages | |||
Keywords | 2DEG, AlGaAs/GaAs, NbN detectors | ||||
Abstract | Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники. | ||||
Address | Москва | ||||
Corporate Author | Thesis | ||||
Publisher | Прометей, МПГУ | Place of Publication | Editor | ||
Language | Summary Language | Original Title | |||
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Series Volume | Series Issue | Edition | |||
ISSN | ISBN | 978-5-4263-0118-4 | Medium | ||
Area | Expedition | Conference | |||
Notes | УДК: 537.311 | Approved | no | ||
Call Number | Serial | 1818 | |||
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Author | Семенов, А. В.; Корнеев, А. А.; Лобанов, Ю. В.; Корнеева, Ю. П.; Рябчун, С. А.; Лаврова, О. С.; Третьяков, И. В.; Флоря, И. Н.; Силаев, М. А.; Кинев, Н. В.; Ковалюк, В. В.; Смирнов, К. В.; Гольцман, Г. Н. | ||||
Title | Поляризация электромагнитной волны вблизи фокуса зеркала и системы зеркал в субтерагерцовом диапазоне частот | Type | Journal Article | ||
Year | 2012 | Publication | Современные проблемы науки и образования | Abbreviated Journal | |
Volume | Issue | 2 | Pages | ||
Keywords | sub-terahertz radio telescope | ||||
Abstract | Рассмотрено влияние оптической системы телескопа на поляризацию принимаемого электромагнитного сигнала. Описано изменение поляризации луча при отражении от произвольно ориентированной поверхности зеркала. Учтены искажения поляризации, обусловленные как отклонением лучей от первоначального направления, так и различием в коэффициентах отражения для разных поляризаций в случае неидеального отражения. В рамках метода Френеля получены оценочные формулы, дающие отношение амплитуд поля с исходной поляризацией и с поляризацией, перпендикулярной исходной, вблизи фокальной точки оптической системы. Формулы выведены для нескольких практически важных случаев, в том числе для параболического зеркала и системы двух зеркал. Оценена верхняя граница поляризационных искажений в пределах кружка Эйри. Полученные оценки согласуются с результатами численного расчёта для двухзеркального радиотелескопа субтерагерцового диапазона. | ||||
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Language | Russian | Summary Language | Original Title | ||
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Notes | 9 страниц; УДК 535-47 | Approved | no | ||
Call Number | Serial | 1819 | |||
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Author | Казаков, А. Ю.; Селиверстов, С. В.; Дивочий, А. В.; Смирнов, К. В.; Финкель, М. И.; Вахтомин, Ю. Б. | ||||
Title | Возможность применения сверхпроводниковых материалов в качестве отражающего покрытия зеркала телескопа, предназначенного для наблюдений анизотропии реликтового излучения | Type | Journal Article | ||
Year | 2012 | Publication | Преподаватель ХХI век | Abbreviated Journal | |
Volume | Issue | 3 | Pages | 221-224 | |
Keywords | submillimeter radio telescope | ||||
Abstract | В статье исследуется возможность использования сверхпроводящего материала в качестве отражающего слоя зеркала субмиллиметрового телескопа, охлажденного до криогенных температур и предназначенного для наблюдений реликтового излучения. Для нескольких сверхпроводниковых материалов вычислен диапазон частот, в котором флуктуации теплового излучения покрытия меньше флуктуаций источника. Показана перспективность применения покрытия из Nb3Ge. | ||||
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Language | Russian | Summary Language | Original Title | ||
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Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1820 | |||
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Author | Семенов, А. В.; Корнеев, А. А.; Лобанов, Ю. В.; Корнеева, Ю. П.; Рябчун, С. А.; Третьяков, И. В.; Флоря, И. Н.; Смирнов, А. В.; Ковалюк, В. В.; Смирнов, К. В.; Гольцман, Г. Н. | ||||
Title | Оценка поляризационных искажений, вносимых оптической системой радиотелескопа миллиметрового диапазона | Type | Journal Article | ||
Year | 2012 | Publication | Преподаватель ХХI век | Abbreviated Journal | |
Volume | Issue | 4 | Pages | 230-236 | |
Keywords | millimeter radio telescope | ||||
Abstract | В статье рассмотрена поляризация электромагнитного поля вблизи фокальной точки телескопической системы. Оценена верхняя граница поляризационных искажений, вносимых отражающими поверхностями, в том числе с учетом неидеальности отражения. | ||||
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Language | Russian | Summary Language | Original Title | ||
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Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1821 | |||
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Author | Семенов, А. В.; Корнеев, А. А.; Смирнов, А. В.; Смирнов, К. В.; Ожегов, Р. В.; Окунев, О. В.; Гольцман, Г. Н.; Девятов, И. А. | ||||
Title | Линейные по мощности поглощаемого излучения поправки к спектральным функциям «грязного» сверхпроводника и отклик сверхпроводниковых детекторов | Type | Journal Article | ||
Year | 2012 | Publication | Преподаватель ХХI век | Abbreviated Journal | |
Volume | Issue | 3 | Pages | 216-220 | |
Keywords | dirty superconductor film | ||||
Abstract | В статье развит метод расчета малых поправок к спектральным функциям пленки «грязного» сверхпроводника, возникающих под действием поглощаемой мощности электромагнитного излучения. Метод пригоден в случае спектральных функций произвольного вида, что позволяет применять его для расчета отклика сверхпроводниковых детекторов излучения различного типа. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1822 | |||
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Author | Корнеева, Ю. П.; Трифонов, А. В.; Вахтомин, Ю. Б.; Смирнов, К. В.; Корнеев, А. А.; Рябчун, С. А.; Третьяков, И. В.; Гольцман, Г. Н. | ||||
Title | Расчет согласующего оптического резонатора для сверхпроводникового нанополоскового детектора | Type | Journal Article | ||
Year | 2012 | Publication | Преподаватель ХХI век | Abbreviated Journal | |
Volume | Issue | 3 | Pages | 225-227 | |
Keywords | SSPD, SNSPD | ||||
Abstract | В статье произведен расчет резонатора, предназначенного для согласования сверхпроводникового нанополоскового однофотонного детектора с оптическим сигналом. Показано, что для детектора, выполненного из пленки с типичным сопротивлением квадрата 500 Ом и коэффициентом заполнения 0.5 коэффициент согласования с излучением, поляризованным параллельно полоскам детектора, достигает величины около 60%. | ||||
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Language | Russian | Summary Language | Original Title | ||
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Notes | Approved | no | |||
Call Number | Serial | 1823 | |||
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Author | Semenov, A. V.; Devyatov, I. A.; Korneev, A. A.; Smirnov, K. V.; Goltsman, G. N.; Melnikov, A. P. | ||||
Title | Derivation of expression for thermodynamic potential of “dirty” superconductor | Type | Journal Article | ||
Year | 2012 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
Volume | Issue | 4 | Pages | ||
Keywords | dirty superconductor, Usadel theory, thermodynamic potential | ||||
Abstract | We derive a formula for thermodynamic potential of dirty superconductor which express it via isotropic quasiclassical Green functions of Usadel theory. Our result allows unify description of dynamic processes and fluctuations in superconducting nano-electronic devices. | ||||
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Notes | 7 pages | Approved | no | ||
Call Number | Serial | 1824 | |||
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Author | Смирнов, А. В.; Карманцов, М. С.; Смирнов, К. В.; Вахтомин, Ю. Б.; Мастеров, Д. В.; Тархов, М. А.; Павлов, С. А.; Парафин, А. Е. | ||||
Title | Терагерцовый отклик болометров на основе тонких пленок YBCO | Type | Journal Article | ||
Year | 2012 | Publication | ЖТФ | Abbreviated Journal | ЖТФ |
Volume | 82 | Issue | 12 | Pages | 108-111 |
Keywords | YBCO HEB NEP | ||||
Abstract | Представлены первые результаты измерения болометрического отклика высокотемпературных сверхпроводниковых детекторов на основе тонких пленок YBCO на электромагнитное излучение с частотой 2.5 THz. Минимальное значение оптической мощности, эквивалентной шуму созданных детекторов, составило 3.5· 10-9 W/sqrt(Hz)sqrt. Обсуждена возможность дальнейшего увеличения чувствительности исследуемых детекторов. | ||||
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Language | Russian | Summary Language | Original Title | ||
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Notes | Approved | no | |||
Call Number | Serial | 1825 | |||
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Author | Чулкова, Галина Меркурьевна; Семёнов, Александр Владимирович; Тархов, Михаил Александрович; Гольцман, Григорий Наумович; Корнеев, Александр Александрович; Смирнов, Константин Владимирович | ||||
Title | О возможности использования PNR-SNPD в системах телекоммуникационной связи | Type | Journal Article | ||
Year | 2012 | Publication | Преподаватель ХХI век | Abbreviated Journal | |
Volume | Issue | 2 | Pages | 244-246 | |
Keywords | PNR SSPD, SNSPD, SNPD | ||||
Abstract | Рассмотрена возможность применения сверхпроводникового нанополоскового детектора, разрешающего число фотонов (Photon-Number Resolving Superconducting Nanowire Photon Detector, PNR-SNPD), в качестве датчика приёмных модулей телекоммуникационных линий. Оценена мощность оптического импульса, необходимая для достижения приемлемо низкой доли ошибочных битов. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1826 | |||
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Author | Korneeva, Yu. P.; Trifonov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. | ||||
Title | Design of resonator for superconducting single-photon detector | Type | Journal Article | ||
Year | 2011 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
Volume | Issue | 12 | Pages | ||
Keywords | SSPD optical resonator, SNSPD | ||||
Abstract | A resonator for superconducting single-photon detector is designed. Near 60% coupling with a radiation propagating from a dielectric substrate of optical fiber is demonstrated to be achieved for typical values of the detector’s film sheet resistance. | ||||
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Language | Russian | Summary Language | Original Title | ||
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Notes | 6 pages | Approved | no | ||
Call Number | Serial | 1827 | |||
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Author | Hübers, H.-W.; Semenov, A.; Richter, H.; Birk, Manfred; Krocka, Michael; Mair, Ulrich; Smirnov, K.; Gol'tsman, G.; Voronov, B. | ||||
Title | Terahertz heterodyne receiver with a hot-electron bolometer mixer | Type | Conference Article | ||
Year | 2002 | Publication | Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop | Abbreviated Journal | Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop |
Volume | Issue | Pages | |||
Keywords | NbN HEB mixers | ||||
Abstract | During the past decade major advances have been made regarding low noise mixers for terahertz (THz) heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a µW power from the local oscillator (LO). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, are of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated the performance of the receiver. This yields important information for the development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA)[1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR. | ||||
Address | Monterey, CA, USA | ||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | Wold, J.; Davidson, J. | ||
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Notes | 4 pages; Unconfirmed but cited in https://kups.ub.uni-koeln.de/1622/1/bedorf.pdf; There is a Program of the Workshop: https://www.yumpu.com/en/document/view/7411055/far-ir-submm-mm-detector-technology-workshop-sofia-usra (there is no title of this article in the Program); There is also identical publication in Proc. ISSTT (Serial: 332, “A broadband terahertz heterodyne receiver with an NbN HEB mixer”). | Approved | no | ||
Call Number | Serial | 1829 | |||
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Author | Смирнов, Константин Владимирович | ||||
Title | Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе | Type | Manuscript | ||
Year | 2000 | Publication | М. МПГУ | Abbreviated Journal | |
Volume | Issue | Pages | |||
Keywords | 2DEG, AlGaAs/GaAs heterostructures, NbN films | ||||
Abstract | Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств. | ||||
Address | Москва, МПГУ | ||||
Corporate Author | Thesis | Ph.D. thesis | |||
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Notes | Approved | no | |||
Call Number | Serial | 1830 | |||
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Author | Гольцман, Г. Н.; Веревкин, А. А.; Гершензон, Е. М.; Птицина, Н. Г.; Смирнов, К. В.; Чулкова, Г. М. | ||||
Title | Исследования процессов неупругой релаксации и примесная спектроскопия-релаксометрия в двумерном электронном газе в полупроводниковых структурах с квантовыми ямами | Type | Report | ||
Year | 1995 | Publication | Abbreviated Journal | ||
Volume | Issue | Pages | |||
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Abstract | В гетероструктурах GaAs/AlGaAs впервые прямым методом измерена температурная зависимость вpемени энеpгетической pелаксации двумерного электронного газа te(T) в широком диапазоне температур Т=1,5 – 50 К в квазиравновесных условиях. Для измерений использовался высокочувствительный спектрометр миллиметрового диапазона волн с высоким временным разрешением, который позволял измерять релаксационные времена до 150 пс с погрешностью не более 20%. Верхний предел температуры определялся временным разрешением спектрометра. Исследования проводились на высококачественных образцах с поверхностной концентрацией носителей ns = 4,2 1011 см-2 и подвижностью m = 7 105 см2В-1с-1 (при Т = 4,2К). В квазиравновесных условиях из температурной зависимости tе определен предел подвижности при низких температурах (T<4.2 K), связанный с рассеянием на пьезоакустическом потенциале, получено время неупругой релаксации, связанное с рассеянием на деформационном потенциале (15 K25 K), получено характерное время испускания оптического фонона (tLO>4,5пс), которое существенно превышает время сронтанного излучения оптического фонона (примерно в 30 раз), что связано с большой ролью процессов перепоглащения фононов электронами.При низких температурах проведены измерения tе в условиях сильного разогрева. Полученные значения tе и зависимость tе от температуры электронов Те совпадают с tе(Т) в квазиравновесных условиях при Т=Те. Из полученных значений tе(Те) построена зависимость мощности энергетических потерь от Те, которая хорошо согласуется с литературными данными.Начаты измерения в магнитном поле, которые показывают переспективность использованного нами метода измерений как в области слабых магнитных полей при факторе заполнения >10, так и в области сильных магнитных полей при факторе заполнения >1-2. | ||||
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Notes | Отчет о НИР/НИОКР; РФФИ: 95-02-06409-а; | Approved | no | ||
Call Number | Serial | 1831 | |||
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Author | Гольцман, Г. Н.; Смирнов, К. В. | ||||
Title | По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах | Type | Journal Article | ||
Year | 2001 | Publication | Письма в ЖЭТФ | Abbreviated Journal | Письма в ЖЭТФ |
Volume | 74 | Issue | 9 | Pages | 532-538 |
Keywords | 2DEG, AlGaAs/GaAs heterostructures | ||||
Abstract | Рассмотрены теоретические и экспериментальные работы, посвященные изучению электрон-фононного взаимодействия в двумерном электронном газе полупроводниковых гетероструктур при низких температурах в случае сильного разогрева в электрическом поле, в квазиравновесных условиях и в квантующем магнитном поле, перпендикулярном 2D слою. | ||||
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Notes | Duplicated as 1541: “Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures” | Approved | no | ||
Call Number | Serial | 1832 | |||
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Author | Селиверстов, С. В.; Финкель, М. И.; Рябчун, С. А.; Воронов, Б. М.; Каурова, Н. С.; Селезнев, В. А.; Смирнов, К. В.; Вахтомин, Ю. Б.; Пентин, И. В.; Гольцман, Г. Н. | ||||
Title | Терагерцевый сверхпроводниковый детектор с аттоджоулевым энергетическим разрешением и постоянной времени 25 пс | Type | Conference Article | ||
Year | 2014 | Publication | Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» | Abbreviated Journal | |
Volume | 1 | Issue | Pages | 91-92 | |
Keywords | NbN HEB | ||||
Abstract | Представлены результаты измерения энергетического разрешения терагерцевого сверхпроводникового NbN-детектора на эффектеэлектронного разогрева, работающего при температуре около 10 К. Использование инновационной in situ технологии производства привело к существенному улучшению чувствительности детектора. Увеличение быстродействия детектора было достигнуто за счет реализации дополнительного диффузионного канала охла-ждения электронной подсистемы. Измеренное значение эквивалентной мощности шума на частоте 2.5 ТГц составило 2.0×10-13Вт•Гц-0.5, постоянной времени 25 пс. Соответствующее расчетное значение энергетического разрешения составило 2.5 аДж. | ||||
Address | Нижний Новгород, Россия | ||||
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Language | Russian | Summary Language | Original Title | ||
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Notes | Approved | no | |||
Call Number | Serial | 1833 | |||
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Author | Бурмистрова, А. В.; Девятов, И. А. | ||||
Title | Расчет электронного транспорта в гетероструктурах, содержащих многозонные сверхпроводники | Type | Conference Article | ||
Year | 2014 | Publication | Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» | Abbreviated Journal | |
Volume | 1 | Issue | Pages | 21-22 | |
Keywords | N/I/Sp junctions | ||||
Abstract | В рамках приближения сильной связи теоретически рассчитаны проводимости контактов вида нормальный металл/изолятор/одноорбитальный сверхпроводник с p-типом сверхпроводящего спаривания (N/I/Sp). Объяснено наблюдаемое экспериментально как появление пика при нулевом напряжении, так и его расщепление в зависимости от толщины слоя изолятора. В рамках этой же микроскопической теории развит вариант техники решеточной функции Грина в мацубаровом представлении. Используя разработанный подход, рассчитаны фазовые и температурные зависимости тока Джозефсона для контакта сверхпроводника s-типа и многозонного железосодержащего сверхпроводника (ферропниктида) для различных ориентаций границы по отношению к кристаллографическим осям пниктида. | ||||
Address | Нижний Новгород, Россия | ||||
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Language | Russian | Summary Language | Original Title | ||
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Notes | Approved | no | |||
Call Number | Serial | 1834 | |||
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Author | Кардакова, А. И.; Финкель, М. И.; Морозов, Д. В.; Ковалюк, В. В.; Ан, П. П.; Гольцман, Г. Н. | ||||
Title | Время электрон-фононного взаимодействия в сверхпроводниковых пленках нитрида титана | Type | Conference Article | ||
Year | 2014 | Publication | Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» | Abbreviated Journal | |
Volume | 1 | Issue | Pages | 47-48 | |
Keywords | TiN films | ||||
Abstract | Определены времена электрон-фононного взаимодействия в тонких сверхпроводниковых пленках нитрида титана. Измеренные значения τ_eph находятся в диапазоне от 5.5 нс до 88 нс при температурах 4,2 К и 1,7 К, соответственно, и соответствуют температурной зависимости Т^-3. | ||||
Address | Нижний Новгород, Россия | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1835 | |||
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Author | Корнеева, Ю. П.; Михайлов, М. М.; Манова, Н. Н.; Дивочий, А. А.; Корнеев, А. А.; Вахтомин, Ю. Б.; Першин, Ю. П.; Гольцман, Г. Н. | ||||
Title | Сверхпроводниковый однофотонный детектор на основе аморфных пленок MoSi | Type | Conference Article | ||
Year | 2014 | Publication | Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» | Abbreviated Journal | |
Volume | 1 | Issue | Pages | 53-54 | |
Keywords | MoSi SSPD | ||||
Abstract | Нами были изготовлены и исследованы однофотонные детекторы на основе сверхпроводящих пленок Mo x Si 1-x двух различных стехиометрий: Mo 3 Si и Mo 4 Si. При температуре 1.7 К лучшие детекторы площадью 7 мкм*7 мкм на основе этих пленок продемонстрировали системную квантовую эффективность 18% при скорости темнового счета 10 с -1 на длине волны 1.2 мкм с использованием неполяризованного источника, длительность импульса – 6 нс, джиттер – 120 пс. | ||||
Address | Нижний Новгород, Россия | ||||
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Language | Russian | Summary Language | Original Title | ||
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Notes | Approved | no | |||
Call Number | Serial | 1836 | |||
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Author | Смирнов, К. В. | ||||
Title | AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона | Type | Abstract | ||
Year | 2003 | Publication | Тезисы докладов VI Российской конференции по физике полупроводников | Abbreviated Journal | |
Volume | Issue | Pages | 181 | ||
Keywords | 2DEG, AlGaAs/GaAs heterostructures, mixer | ||||
Abstract | |||||
Address | ФТИ им. А. Ф. Иоффе, Санк-Петербург | ||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | VI Российской конференции по физике полупроводников (27-31 октября) | ||
Notes | Unconfirmed; Сама конференция, однако, была -- её упоминают: [http://www.nsc.ru/HBC/article.phtml?nid=271&id=17], [https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/lab-20/publikatsii/2003], [http://www.ioffe.ru/sem_tech/sem%5Fteh%5Fmovpe%5Fpublications%5Fru.htm#R2003], [https://istina.ips.ac.ru/collections/828771/] | Approved | no | ||
Call Number | Serial | 1837 | |||
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