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Author |
Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
High speed hot-electron superconducting bolometer |
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Conference Article |
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Year |
1993 |
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Proc. SPIE |
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Proc. SPIE |
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Volume |
2104 |
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Pages |
181-182 |
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NbN HEb, Nb, Al |
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Abstract |
Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q. |
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SPIE |
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Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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1652 |
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Danerud, M.; Winkler, D.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N.; Lindgren, M. |
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Title |
Picosecond detection of infrared radiation with YBa2Cu3O7-δ thin films |
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Conference Article |
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Year |
1993 |
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Proc. SPIE |
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Proc. SPIE |
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Volume |
2104 |
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183-184 |
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YBCO HTS HEB detectors |
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Picosecond nonequilibrium and slow bolometric responses from a patterned high-Tc superconducting (HTS) film due toinfrared radiation were investigated using both modulation and pulse techniques. Measurements at A, = 0.85 [tm andA, = 10.6 lim have shown a similar behaviour of the response vs modulation frequency f. The responsivity of the HTS filmbased detector at f ..- 0.6-1 GHz is estimated to be 10-2 – 10-1 V/W. |
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Spie |
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Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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10.1117/12.2298489 |
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1653 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
Hot-electron superconducting mixers |
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Conference Article |
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Year |
1993 |
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Proc. SPIE |
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Proc. SPIE |
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Volume |
2104 |
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329-330 |
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The creation of low noise heterodyne receivers for frequencies above 1 THz is in the urgentneed for radio astronomy, laser spectroscopy, plasma diagnostic, etc. In this paper we discussthe nonlinear effect related to hot electrons in superconductors, and their potential use in lownoise submilimeter wave mixer. We also discuss results achieved so far as well as possible futuredevelopments. |
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SPIE |
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Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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1654 |
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Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
Hot electron superconductive mixers |
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Conference Article |
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Year |
1993 |
Publication |
Proc. 4th Int. Symp. Space Terahertz Technol. |
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Proc. 4th Int. Symp. Space Terahertz Technol. |
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618-622 |
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HEB mixers |
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1656 |
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Gol'tsman, G. N.; Elant'iev, A. I.; Karasik, B. S.; Gershenzon, E. M. |
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Title |
Antenna – coupled superconducting electron-heating bolometer |
Type |
Conference Article |
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Year |
1993 |
Publication |
Proc. 4th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 4th Int. Symp. Space Terahertz Technol. |
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623-628 |
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Keywords |
HEB |
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Abstract |
We propose a novel antenna-coupled superconducting bolometer based on electron-heating in the resistive state. A short narrow ultrathin super- conducting film strip (sized approximately 4x1x0.01 pm 3 ), which is in good thermal contact with the thermostat, serves as a resistive load for infrared or submillimeter current. In contrast to conventional isothermal super- conducting bolometers electron-heating ones can have a higher sensitivity which grows when filni. thickness is reduced. Response time of electron- heating bolometer does not depend on heat transfer from the film to the enviroment. To calculate the sensitivity (NEP), we have used experimental data on wideband Al, Nb and NbN bolometers which have the same un- derlying physical mechanism. The bolom.eters have been made in the form of a structure composed of a number of long narrow strips. The values of for Al, NEP have been found to be 1.5 . 113 -16 1 140 -15 ) and 2 . 10 – 14werT,-1/2 – Nb and NbN respectively. In the paper, the prospects are also discussed of improving the picosecond YBaCuO detector, developed recently. NEP value of the detector, if combined with a microantenna, can reach the order of 10- •ilz-v2. |
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1657 |
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Nebosis, R. S.; Heusinger, M. A.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
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Title |
Ultrafast photoresponse of a structured YBa2Cu3O7-δ thin film to ultrashort FIR laser pulses |
Type |
Journal Article |
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Year |
1993 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
3 |
Issue |
1 |
Pages |
2160-2162 |
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Keywords |
YBCO HTS detectors |
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Abstract |
The authors have investigated the photoinduced voltage response of a current-carrying structured YBa2Cu3O7-δ thin film to ultrashort far-infrared (FIR) laser pulses in the frequency range from 0.7 THz to 7 THz. The detector has shown an almost constant sensitivity of 1 mV/W and a noise equivalent power of less than 5*10/sup -7/ W/ square root Hz. The temperature dependence of the decay time of the detector signal was studied for temperatures around the transition temperature of the film ( approximately 80 K). For a detector temperature where dR/dT had its maximum, the authors observed bolometric signals with decay times of about 2 ns, and for lower temperatures they observed nonbolometric signals with decay times of approximately 120 ps; the duration of the nonbolometric signals was limited by the time resolution of the electronic registration equipment. |
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1658 |
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Semenov, A. D.; Sergeev, A. V.; Kouminov, P.; Goghidze, I. G.; Heusinger, M. A.; Nebosis, R. S.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F. |
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Title |
Transparency of YBCO film/substrate interfaces for thermal phonons determined by photoresponse measurements |
Type |
Conference Article |
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Year |
1993 |
Publication |
Proc. 1st European Conf. on Appl. Supercond. |
Abbreviated Journal |
Proc. 1st European Conf. on Appl. Supercond. |
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Volume |
2 |
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Pages |
1443-1446 |
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Keywords |
YBCO HTS detectors |
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Abstract |
Direct measurements of the thermal boundary resistance were performed by means of the stationary method. In this approach the temperature of an electrically heated film is controlled by its dc resistance while an additional film on the same substrate is used as a thermometer monitoring substrate temperature. The temperature field in the substrate is then calculated to deduce the Kapitza temperature step at the interface between the heated strip and the substrate. The main statement of all afore-said papers is that experimental values of the thermal boundary resistance are too large to be explained by the acoustic mismatch model. In this paper we investigate transparency of YBaCuO film/substrate interfaces for thermal phonons by means of photoresponse measurements. We show that our data are in reasonable agreement with the acoustic mismatch theory. |
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Freyhardt, H. C. |
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3-88355-197-X |
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1st European conference on applied superconductivity |
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Call Number |
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Serial |
1661 |
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Author |
Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gershenzon, E. M. |
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Title |
Electron-phonon interaction in thin YBaCuO films and fast detectors |
Type |
Conference Article |
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Year |
1993 |
Publication |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
Abbreviated Journal |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
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Volume |
112 |
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184-185 |
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Keywords |
YBCO HTS detectors |
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The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector. |
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Meissner, M.; Pohl, R. O. |
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Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 |
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1662 |
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Heusinger, M. A.; Nebosis,R. S.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
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Title |
Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa2Cu3O7-δ thin film |
Type |
Conference Article |
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Year |
1993 |
Publication |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
Abbreviated Journal |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
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112 |
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193-195 |
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YBCO HTS detectors |
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We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films. |
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Meissner, M.; Pohl, R. O. |
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Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 |
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1663 |
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Sergeev, A. V.; Livanov, D. V. |
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Phonon renormalization of thermoelectric power of high-Tc materials |
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Conference Article |
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1993 |
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Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
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Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
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112 |
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204-205 |
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HTS, YBCO |
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Renormalization of thermoelectric power due to Nielsen — Taylor effect (interference between electron-phonon and electron- impurity interactions) is used for the explanation of the temperature dependence and sign of the thermopower in high-Tc materials. In the framework of the model the negative sign of TEP of untwinned YBa2Cu3O7−x crystal in a-direction observed by Howson et. al. is connected to the strong hole scattering via O-vacancies in chains. |
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Meissner, M.; Pohl, R. O. |
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Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 |
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1664 |
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Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M. |
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Thermal boundary resistance at YBaCuO film-substrate interface |
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Conference Article |
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1993 |
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Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
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Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
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112 |
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405-406 |
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YBCO films |
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The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent. |
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Meissner, M.; Pohl, R. O. |
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Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 |
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1665 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches |
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1992 |
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Progress in High Temperature Superconductivity |
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Progress in High Temperature Superconductivity |
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32 |
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190-195 |
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superconducting films, heating of electrons |
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International Conference on High Temperature Superconductivity and Localization Phenomena , Moscow, Russia , 11 – 15 May 1991 |
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https://books.google.co.kr/books?hl=en&lr=&id=uCI0DwAAQBAJ&oi=fnd&pg=PA190&ots=z7WGjXYWr4&sig=TQ6G6dKsmcj4faYe1ZLw_BFmps8 |
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1666 |
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Kollberg, Erik L.; Gershenzon, E.; Goltsman, G.; Yngvesson, K. S. |
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Hot electron mixers, the potential competition |
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Conference Article |
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1992 |
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Proc. ESA Symp. on Photon Detectors for Space Instrumentation |
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Proc. ESA Symp. on Photon Detectors for Space Instrumentation |
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201-206 |
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HEB mixers |
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There is an urgent need in radio astronomy for low noise heterodyne receivers for frequencies above about 500 GHz. It is not certain that mixers based on superconducting quasiparticle tunnelling (SIS mixers) may turn out to be the answer to this need. In order to try to find an alternative way for realizing low noise heterodyne receivers for submillimeter waves, so called hot electron bolometric effects for mixing are now being investigated. Two basically different approaches are tried, one based on semiconductors and one on superconductors. Both methods are briefly discussed in this overview paper. |
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ESA Symposium on Photon Detectors for Space Instrumentation |
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1667 |
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Author |
Gershenzon, E. M.; Gogidze, I. G.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Picosecond response on optical-range emission in thin YBaCuO films |
Type |
Journal Article |
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Year |
1991 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Volume |
17 |
Issue |
22 |
Pages |
6-10 |
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Keywords |
YBCO HTS detectors |
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Abstract |
Целью настоящей работы является целенаправленный поиск пико-секундного отклика на оптическое излучение выяснение оптимальных условий его наблюдения, а также сравнение характеристик неравновесных эффектов в оптическом и субмиллиметровом диапазонах. |
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Russian |
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1684 |
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Author |
Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
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Title |
Low energy excitation in La2CuO4 |
Type |
Journal Article |
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Year |
1990 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Volume |
3 |
Issue |
5 |
Pages |
832-837 |
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Keywords |
metal-dielectric-La2CuO4, monocrystals |
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Abstract |
Measurements of transmission and photoconductivity spectra in submillimeter wave length range as well as of capacity C and conductivity G in the region of acoustic frequencies of metal-dielectric-La2CuO4 system at low temperatures are performed using La2CuO4 monocrystals. Optical spectra posses a threshold character, a sharp decrease of transmission and photocoductivity signal occurs in the energy region hν>1.5 MeV. C(ω,T) and G(ω, T) dependences have a universal form typical of Debye type relaxation processes. Relaxation time dependence is of thermoactivated character τ(T)∼exp(ξ/T) with the gap value ξ≅2 meV. It is assumed that excitations with characteristic energy of ∼2 meV exist in La2CuO4. A possible nature of the detected low-energy excitations is discussed. |
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1688 |
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Author |
Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. |
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Title |
Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
Type |
Journal Article |
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Year |
1989 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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Volume |
23 |
Issue |
8 |
Pages |
1356-1361 |
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Keywords |
Ge, crystallography |
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Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Russian |
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Duplicated as 1692 |
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Serial |
1691 |
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Author |
Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures |
Type |
Journal Article |
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Year |
1989 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
50 |
Issue |
5 |
Pages |
283-286 |
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Keywords |
YBCO HTS films |
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Abstract |
The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs. |
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Serial |
1690 |
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Author |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
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Title |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
Type |
Journal Article |
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Year |
1989 |
Publication |
Sov. Phys. and Technics of Semiconductors |
Abbreviated Journal |
Sov. Phys. and Technics of Semiconductors |
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Volume |
23 |
Issue |
8 |
Pages |
843-846 |
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Keywords |
Ge, crystallography |
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Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Notes |
Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
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no |
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1692 |
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Author |
Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D. |
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Title |
Fast-response superconducting electron bolometer |
Type |
Journal Article |
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Year |
1989 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Volume |
15 |
Issue |
3 |
Pages |
88-92 |
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Keywords |
Nb HEB |
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Abstract |
The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns. |
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Russian |
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no |
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1694 |
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Author |
Gershenzon, E. M.; Gol’tsman, G. N.; Sergeev, A.; Semenov, A. D. |
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Title |
Picosecond response of YBaCuO films to electromagnetic radiation |
Type |
Conference Article |
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Year |
1990 |
Publication |
Proc. European Conf. High-Tc Thin Films and Single Crystals |
Abbreviated Journal |
Proc. European Conf. High-Tc Thin Films and Single Crystals |
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Pages |
457-462 |
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Keywords |
YBCO HTS detectors |
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Abstract |
Radiation-induced change of the resistance was studied in the resistive state of YBaCuO films. Electron-phonon relaxation time T h was determmed from direct ep measurements and analysis of quasistationary electron heating. Temperature dependence of That TS 40 K was found to – ep be T h.. T'. The resul ts show that ep detectors with the response time of few picosecond at nitrogen temperature can be realized. |
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Gorzkowski, W.; Gutowski, M.; Reich, A.; Szymczak, H. |
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European Conference , Ustroń, Poland , 30 Sept – 4 Oct 1989 |
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1695 |
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Author |
Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Limiting characteristics of fast-response superconducting bolometers |
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Journal Article |
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Year |
1989 |
Publication |
Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Zhurnal Tekhnicheskoi Fiziki |
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Volume |
59 |
Issue |
2 |
Pages |
11-120 |
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Keywords |
HEB |
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Abstract |
Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. |
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1696 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
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Title |
Intense electromagnetic radiation heating of superconductor electrons in resistive state |
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Journal Article |
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Year |
1988 |
Publication |
Fizika Nizkikh Temperatur |
Abbreviated Journal |
Fizika Nizkikh Temperatur |
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Volume |
14 |
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7 |
Pages |
753-763 |
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Nb HEB |
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Abstract |
An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model. |
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1697 |
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Author |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
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Title |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
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Journal Article |
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Year |
1988 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
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Volume |
22 |
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3 |
Pages |
540-543 |
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Ge, free holes, capture |
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Abstract |
Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. |
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Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge |
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1698 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I. |
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Title |
Submillimeter backward-wave-tube spectrometer-relaxometer |
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Journal Article |
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1987 |
Publication |
Pribory i Tekhnika Eksperimenta |
Abbreviated Journal |
Pribory i Tekhnika Eksperimenta |
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30 |
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4 |
Pages |
131-137 |
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Keywords |
BWO, applications |
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Abstract |
A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops. |
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1699 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
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Title |
Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
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Journal Article |
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Year |
1987 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
46 |
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5 |
Pages |
237-238 |
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Keywords |
YBCO HTS detectors |
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Abstract |
For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. |
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no |
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Call Number |
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1703 |
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Author |
Gershenzon, Ye. M.; Goltsman, G. N.; Yelantyev, A. I.; Petrova, Ye. B.; Ptitsina, N. G.; Filatov, V. S. |
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Title |
Lecture demonstrations of properties of superconductors and liquid helium |
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Journal Article |
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Year |
1987 |
Publication |
USSR Rept Phys. Math. JPRS UPM |
Abbreviated Journal |
USSR Rept Phys. Math. JPRS UPM |
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Volume |
24 |
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7 |
Pages |
51 |
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demonstrations, lections |
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Abstract |
New demonstrations for low temperature physics courses are described. Two transparent Dewar vacuum flasks fitting one inside the other with the external flask for nitrogen and the internal flask for helium are used. The helium temperature can be regulated in the 4.2 to 1.6 K range and the effects of reducing helium to the superfluid state at 2.17 K can be shown: boiling abruptly stops and superfluid flow appears. In order to show the electric and magnetic characteristics of superconductivity, a superconducting NbTi solenoid containing nonsuperconducting wire and germanium and superconducting Nb materials with different critical temperatures is placed in the helium refrigerant vessel. The fall of the resistance at the critical temperatures can be shown. In order to show magnetic field and superconductive current flow properties a shunt of superconductive material is connected in parallel to the coil and is enclosed in a teflon container with a heater which can vary its temperature. When it is heated and not superconductive, magnetic field effects can be demonstrated and when it is unheated and superconducting a continuous current can be demonstrated. |
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1704 |
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Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. |
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Title |
The excitonic Zeeman effect in uniaxially-strained germanium |
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Journal Article |
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1987 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
65 |
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6 |
Pages |
1233-1241 |
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Ge, Zeeman effect |
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We have carried out a high-resolution spectroscopic study of the absorption of submillimeter radiation by free excitons in germanium compressed along the [ 1 11 ] axis in a magnetic field parallel to the compression axis. In particular, we studied the splitting of the 1s- 2p transition in fields up to 6 kOe at T = 1.6 K, and observed a complex pattern in the Zeeman splitting which we believe is related to the effect of thermal motion of the excitons in a magnetic field on their internal structure (the magneto-Stark effect). The calculated submillimeter spectrum of excitons agrees with the experimental data. We predict that in a magnetic field the energy of the 2p, term is a minimum at a finite value of the exciton momentum perpendicular to the field-that is, the energy minimum forms a ring in momentum space. It follows that the density of states for this term must be a nonmonotonic function of the energy. A theory is developed of analogous phenomena in positronium. |
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1705 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V. |
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Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound |
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Journal Article |
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1987 |
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JETP Lett. |
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JETP Lett. |
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Volume |
46 |
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6 |
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285-287 |
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YBCO HTS HEB |
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For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals. |
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1706 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. |
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Title |
Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium |
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Journal Article |
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Year |
1986 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
64 |
Issue |
4 |
Pages |
889-897 |
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Ge, trapping of free carriers |
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Abstract |
Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3). |
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1707 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Observation of the free-exciton spectrum at submillimeter wavelengths |
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Journal Article |
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1972 |
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JETP Lett. |
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JETP Lett. |
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16 |
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4 |
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161-162 |
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Ge, energy spectrum, free excitons |
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1736 |
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Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Кагане, М. Л.; Мултановский, В. В.; Птицина, Н. Г. |
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Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках |
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1983 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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17 |
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8 |
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1430-1437 |
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BWO spectroscopy, pure semiconductors, residual impurities |
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Russian |
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Duplicated as 1714 |
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1712 |
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Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
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Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
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1983 |
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Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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17 |
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8 |
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908-913 |
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BWO spectroscopy, pure semiconductors, residual impurities |
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Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках |
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Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Kinetics of submillimeter impurity and exciton photoconduction in Ge |
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1982 |
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Optics and Spectroscopy |
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Optics and Spectroscopy |
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52 |
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4 |
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454-455 |
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Ge, exciton photoconduction |
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1715 |
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Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Heating of quasiparticles in a superconducting film in the resistive state |
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1981 |
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JETP Lett. |
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JETP Lett. |
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34 |
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5 |
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268-271 |
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1716 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
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Journal Article |
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1982 |
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JETP Lett. |
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JETP Lett. |
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36 |
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7 |
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296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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1717 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Cross section for binding of free carriers into excitons in germanium |
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1981 |
Publication |
JETP Lett. |
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JETP Lett. |
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33 |
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11 |
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574 |
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Ge, excitons, photoconductivity |
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1718 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Population and lifetime of excited states of shallow impurities in Ge |
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1979 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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49 |
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2 |
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355-362 |
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Ge, photothermal ionization, shallow impurities |
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An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. |
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1719 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
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Capture of photoexcited carriers by shallow impurity centers in germanium |
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Journal Article |
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1979 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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50 |
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4 |
Pages |
728-734 |
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Ge, photoexcited carriers, shallow impurity centers |
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Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. |
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1720 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
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Observation of free carrier resonances in p-type germanium at submillimeter wavelengths |
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1978 |
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Sov. Phys. Solid State |
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Sov. Phys. Solid State |
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20 |
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4 |
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573-579 |
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p-Ge, free carriers, resonances |
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The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions. |
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1721 |
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Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M. |
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Title |
Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it |
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1978 |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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42 |
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6 |
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1142-1148 |
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energy spectrum, Ge, magnetic field |
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Serial |
1722 |
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Author |
Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
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Title |
Population of excited-states of small admixtures in germanium |
Type |
Conference Article |
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Year |
1978 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Volume |
42 |
Issue |
6 |
Pages |
1154-1159 |
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Keywords |
Ge, excited states, admixtures |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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1723 |
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Author |
Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. |
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Title |
Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors |
Type |
Conference Article |
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Year |
1978 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Volume |
42 |
Issue |
6 |
Pages |
1231-1234 |
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Keywords |
spectrum, semiconductors, admixtures, strong magnetic-field |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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no |
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blagosklonskaya1978effect |
Serial |
1724 |
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Author |
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. |
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Title |
Effect of a strong magnetic field on the spectrum of donors in InSb |
Type |
Journal Article |
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Year |
1978 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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Volume |
11 |
Issue |
12 |
Pages |
1395-1397 |
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Keywords |
InSb, spectrum of donors, strong magnetic field |
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no |
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Serial |
1725 |
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Author |
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
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Title |
Carrier lifetime in excited states of shallow impurities in germanium |
Type |
Journal Article |
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Year |
1977 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
25 |
Issue |
12 |
Pages |
539-543 |
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Keywords |
Ge, shallow impurities, excited states |
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no |
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Serial |
1726 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
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Title |
Energy spectrum of acceptors in germanium and its response to a magnetic field |
Type |
Journal Article |
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Year |
1977 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
45 |
Issue |
4 |
Pages |
769-776 |
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Keywords |
p-Ge, photoconductivity, energy spectrum, magnetic field |
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Abstract |
We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression. |
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no |
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Serial |
1727 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
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Title |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
Type |
Journal Article |
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Year |
1977 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
45 |
Issue |
3 |
Pages |
555-565 |
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Keywords |
Ge, GaAs, magnetic field, donors, energy spectrum |
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Abstract |
The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. |
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no |
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Serial |
1728 |
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Author |
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
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Title |
Effect of a high magnetic field on the spectrum of donors in InSb |
Type |
Journal Article |
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Year |
1977 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
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Volume |
11 |
Issue |
12 |
Pages |
2373-2375 |
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Keywords |
InSb, energy spectrum, donors, high magnetic field |
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Russian |
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Notes |
Воздействие сильного магнитного поля на спектр доноров в InSb |
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no |
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Serial |
1729 |
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Author |
Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
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Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
Type |
Journal Article |
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Year |
1976 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
24 |
Issue |
3 |
Pages |
125-128 |
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Keywords |
n-Ge, cyclotron-impurity resonance |
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no |
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Serial |
1730 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
Type |
Journal Article |
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Year |
1976 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
43 |
Issue |
1 |
Pages |
116-122 |
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Keywords |
Ge, free excitons |
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Abstract |
Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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Serial |
1731 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
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Title |
Investigation of population and ionization of donor excited states in Ge |
Type |
Conference Article |
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Year |
1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
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Volume |
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Issue |
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Pages |
631-634 |
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Keywords |
Ge, donor excited states |
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Address |
Amsterdam |
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North-Holland Publishing Co. |
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1732 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
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Title |
Investigation of excited donor states in GaAs |
Type |
Journal Article |
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Year |
1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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Volume |
7 |
Issue |
10 |
Pages |
1248-1250 |
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Keywords |
GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
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Title |
Energy spectrum of free excitons in germanium |
Type |
Journal Article |
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Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
18 |
Issue |
3 |
Pages |
93 |
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Keywords |
Ge, free excitons, energy spectrum |
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no |
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1734 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Submillimeter spectroscopy of semiconductors |
Type |
Journal Article |
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Year |
1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
37 |
Issue |
2 |
Pages |
299-304 |
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Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
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Abstract |
The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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1735 |
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Author |
Goltsman, G. |
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Title |
Simple method for stabilizing power of submillimetric spectrometer |
Type |
Journal Article |
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Year |
1972 |
Publication |
Pribory i Tekhnika Eksperimenta |
Abbreviated Journal |
Pribory i Tekhnika Eksperimenta |
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Volume |
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1 |
Pages |
136 |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia |
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no |
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1738 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
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Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
Type |
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Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
5 |
Pages |
185-186 |
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Keywords |
Ge, Si, neutral impurity atom, binding energy |
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no |
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1739 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
Transitions of electrons between excited states of donors in germanium |
Type |
Journal Article |
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Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
2 |
Pages |
63-65 |
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Keywords |
Ge, donors, excited states |
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1740 |
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Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
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Title |
Germanium hot-electron narrow-band detector |
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Journal Article |
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Year |
1971 |
Publication |
Sov. Radio Engineering And Electronic Physics |
Abbreviated Journal |
Sov. Radio Engineering And Electronic Physics |
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16 |
Issue |
8 |
Pages |
1346 |
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Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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1741 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
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Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
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Journal Article |
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Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
6 |
Pages |
241 |
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Ge, gamma irradiation, defects, impurities |
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1742 |
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Author |
Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory |
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Title |
Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors |
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Abstract |
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Year |
2020 |
Publication |
Graphene and 2dm Virt. Conf. |
Abbreviated Journal |
Graphene and 2DM Virt. Conf. |
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single layer graphene, SLG, CVD, plasmons, FET |
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Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464. |
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Grenoble, France |
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Graphene and 2dm Virtual Conference & Expo |
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no |
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1743 |
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Author |
Baselmans, J. J. A.; Hajenius, M.; Gao, J.; de Korte, P.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. |
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Title |
Doubling of sensitivity and bandwidth in phonon-cooled hot-electron bolometer mixers |
Type |
Conference Article |
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Year |
2004 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
5498 |
Issue |
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Pages |
168-176 |
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Keywords |
Hot electron bolometers, bandwidth, noise temperature, experimental |
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Abstract |
NbN hot electron bolometer (HEB) mixers are at this moment the best heterodyne detectors for frequencies above 1 THz. However, the fabrication procedure of these devices is such that the quality of the interface between the NbN superconducting film and the contact structure is not under good control. This results in a contact resistance between the NbN bolometer and the contact pad. We compare identical bolometers, with different NbN – contact pad interfaces, coupled with a spiral antenna. We find that cleaning the NbN interface and adding a thin additional superconductor prior to the gold contact deposition improves the noise temperature and the bandwidth of the HEB mixers with more than a factor of 2. We obtain a DSB noise temperature of 950 K at 2.5 THz and a Gain bandwidth of 5-6 GHz. For use in real receiver systems we design small volume (0.15x1 micron) HEB mixers with a twin slot antenna. We find that these mixers combine good sensitivity (900 K at 1.6 THz) with low LO power requirement, which is 160 – 240 nW at the Si lens of the mixer. This value is larger than expected from the isothermal technique and the known losses in the lens by a factor of 3-3.5. |
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SPIE |
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Zmuidzinas, J.; Holland, W.S.; Withington, S. |
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Millimeter and Submillimeter Detectors for Astronomy II |
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no |
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1744 |
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Author |
Goltsman, Gregory |
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Title |
Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors |
Type |
Conference Article |
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Year |
2017 |
Publication |
16th ISEC |
Abbreviated Journal |
16th ISEC |
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Pages |
Th-I-QTE-03 (1 to 3) |
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waveguide SSPD, SNSPD |
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We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chipquantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. |
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IEEE/CSC & ESAS Superconductivity News Forum |
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no |
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1745 |
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Author |
Gol’tsman, G.N. |
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Overview of recent results for superconducting NbN terahertz and optical detectors and mixers |
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Miscellaneous |
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Year |
2014 |
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SM2 – Seminar on Terahertz Photonics |
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Volume |
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0562 |
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NbN SSPD, SNSPD, HEB |
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We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. |
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no |
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1746 |
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Averkin, A. S.; Shishkin, A. G.; Chichkov, V. I.; Voronov, B. M.; Goltsman, G. N.; Karpov, A.; Ustinov, A. V. |
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Tunable frequency-selective surface based on superconducting split-ring resonators |
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Conference Article |
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2014 |
Publication |
8th Metamaterials |
Abbreviated Journal |
8th Metamaterials |
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superconducting split-ring resonators |
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We study a possibility to use the 2D superconducting metamaterial as a tunable frequency-selective surface (FSS). The proposed FSS is made of sub-wavelength size (l/14) metamaterial unit cells, where a split-ring resonator is embedded in a small iris aperture in a metal plane. The split-ring resonator is made of NbN film, and its resonance frequency is tuned by the temperature of the sample, changing the kinetic inductance of NbN film. The Ansoft HFSS simulation predicts the FSS tuning range of about 10-20 %. The developed superconducting FSS may be used as a tunable band-pass filter or modulator. |
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Copenhagen, Denmark |
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8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics – Metamaterials |
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no |
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1749 |
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Zhang, J.; Verevkin, A.; Slysz, W.; Chulkova, G.; Korneev, A.; Lipatov, A.; Okunev, O.; Gol’tsman, G. N.; Sobolewski, Roman |
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Time-resolved characterization of NbN superconducting single-photon optical detectors |
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Conference Article |
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2017 |
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Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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10313 |
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103130F (1 to 3) |
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NbN SSPD, SNSPD |
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NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest. |
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SPIE |
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Armitage, J. C. |
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Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada |
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Downloaded from http://www2.ece.rochester.edu/projects/ufqp/PDF/2002/213NbNTimeOPTO_b.pdf This artcle was published in 2017 with only first author indicated (Zhang, J.). There were 8 more authors! |
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1750 |
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Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, Roman; Korneev, A.; Kouminov, P.; Okunev, O.; Chulkova, G.; Gol'tsman, G. |
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Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range |
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Miscellaneous |
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2004 |
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ResearchGate |
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ResearchGate |
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NbN SSPD, SNSPD |
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We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices. |
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Not attributed to any publisher! File name: PR9VervekinSfin_f.doc; Author: JAOLEARY; Last modification date: 2004-02-26 |
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no |
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1751 |
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Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. |
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Механизм преобразования частоты в n-InSb-смесителе |
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Journal Article |
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1991 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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25 |
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11 |
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1986-1998 |
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n-InSb mixer |
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Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн. |
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Russian |
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no |
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1753 |
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Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.; Гусинский, Э. Н.; Литвак-Горская, Л. Б. |
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Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла |
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Journal Article |
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1990 |
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Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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24 |
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12 |
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2145-2150 |
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Hall constant, concentration of impurities, p-Si |
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На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая. |
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Russian |
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no |
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1754 |
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Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. |
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Влияние магнитного поля на захват свободных носителей мелкими примесями в Ge |
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Journal Article |
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1990 |
Publication |
Физика и техника полупроводников |
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Физика и техника полупроводников |
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24 |
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10 |
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1881-1883 |
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impurities, photoconductivity, Ge, capture of free carriers, magnetic field |
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Цель настоящей работы — измерение кинетики примесной фотопроводимости в квантующих магнитных полях. |
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1755 |
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Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б. |
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Кинетические явления в компенсированном n-InSb при низких температурах |
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Journal Article |
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1990 |
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Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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24 |
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1 |
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3-24 |
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compensated n-InSb, impurities |
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Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb. |
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1756 |
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Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. |
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Особенности температурной зависимости холловской подвижности в легированных и некомпенсированных полупроводниках |
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Journal Article |
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1989 |
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Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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23 |
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2 |
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338-345 |
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weakly compensated Si, Ge, doped, Hall mobility |
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На примере легированного и слабо компенсированного Si⟨B⟩ проведены исследования особенностей температурной зависимости подвижности при различных механизмах рассеяния. Уточнен метод определения концентрации компенсирующей примеси по μI(T). Полученные результаты обсуждаются и для Ge. |
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1758 |
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Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. |
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Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ |
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Journal Article |
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1986 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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20 |
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1 |
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99-103 |
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n-Ge, Hubbard upper zone conductivity, negative magnetoresistance |
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В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. |
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1759 |
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Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
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Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца |
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1985 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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19 |
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9 |
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1696-1698 |
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uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation |
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1760 |
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Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
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О механизме динамического сужения линии ЭПР доноров фосфора в кремнии |
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Journal Article |
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1984 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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Volume |
18 |
Issue |
3 |
Pages |
421-425 |
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Si, phosphorus donors, EPR |
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Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам. |
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1761 |
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Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. |
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Об одном способе определения концентрации глубоких примесей в германии |
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1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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17 |
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10 |
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1896-1898 |
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Ge, deep impurities |
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1762 |
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Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. |
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Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда |
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1983 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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17 |
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10 |
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1873-1876 |
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compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance |
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1763 |
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Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. |
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О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси |
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1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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17 |
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3 |
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499-501 |
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shallow neutral impurities, capture, inverse distribution function, Si |
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1764 |
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Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
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Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
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1975 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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40 |
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2 |
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311-315 |
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Ge, cyclotron resonance |
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Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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Goltsman, Gregory N. |
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Development and applications of terahertz hot electron bolometers |
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2021 |
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1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments |
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1st Moscow Int. Conf. on Submillimeter and Millimeter Astronomy: Objectives and Instruments |
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The development of techniques and technologies for the deposition of ultrathin superconducting films, the creation of superconducting structures on a nanometer scale is the basis of significant progress in the field of superconducting receiving systems. Ultrathin NbN films are the basis for a wide range of record-breaking hot electron devices: direct and heterodyne terahertz detectors. Terahertz receivers are especially in demand in high-resolution spectroscopy for astronomical, atmospheric, and medical research. HEB receivers are widely used in terahertz radio astronomy. For example, the Dutch SRON Institute is preparing a project for the GUSTO hot air balloon telescope with a HEB mixer array at 1.4 THz and 1.9 THz. A 5-meter Chinese terahertz telescope DATE5 with HEB mixers at 1.4 THz is installed at the South Pole. The Stratospheric Observatory (SOFIA) uses HEB mixer matrices in the GREAT instrument operating in the 1.2 – 4.7 THz range. It is planned to implement the international project Origins Space Telescope (OST) in the far infrared region based on HEB receivers. The Japanese project Smiles-2 will allow measurements at 1.8 THz in the upper layers of the stratosphere and mesosphere. The development of the Millimetron space observatory continues in Russia. |
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First Moscow International Conference on Submillimeter and Millimeter Astronomy: Objectives and Instruments, Astro Space Center, Moscow, 12-16 April 2021, id. 2 |
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Downloaded from https://millimetron.ru/conference_2021/Goltsman.pdf; Author: Sergey; Last modification: 2021-04-14 |
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1771 |
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Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
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1976 |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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10 |
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1379-1383 |
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Ge, cyclotron resonance, charged impurities, |
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1772 |
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Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
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Absorption spectra in electron transitions between excited states of impurities in germanium |
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1975 |
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JETP Lett. |
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JETP Lett. |
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22 |
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4 |
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95-97 |
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Ge, impurities, excited states, absorption spectra |
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1773 |
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Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
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Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
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1972 |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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6 |
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362-363 |
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Ge, cyclotron resonance, quantizing magnetic fields |
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Korneev, A. A. |
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Superconducting NbN microstrip single-photon detectors |
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2021 |
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Proc. Quantum Optics and Photon Counting |
Abbreviated Journal |
Proc. Quantum Optics and Photon Counting |
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11771 |
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NbN SSPD, SNSPD |
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Superconducting Single-Photon Detectors (SSPD) invented two decades ago have evolved to a mature technology and have become devices of choice in the advanced applications of quantum optics, such as quantum cryptography and optical quantum computing. In these applications SSPDs are coupled to single-mode fibers and feature almost unity detection efficiency, negligible dark counts, picosecond timing jitter and MHz photon count rate. Meanwhile, there are great many applications requiring coupling to multi-mode fibers or free space. ‘Classical’ SSPDs with 100-nm-wide superconducting strip and covering area of about 100 µm2 are not suitable for further scaling due to degradation of performance and low fabrication yield. Recently we have demonstrated single-photon counting in micron-wide superconducting bridges and strips. Here we present our approach to the realization of practical photon-counting detectors of large enough area to be efficiently coupled to multi-mode fibers or free space. The detector is either a meander or a spiral of 1-µm-wide strip covering an area of 50x50 µm2. Being operated at 1.7K temperature it demonstrates the saturated detection efficiency (i.e. limited by the absorption in the detector) up to 1550 nm wavelength, about 10 ns dead time and timing jitter in range 50-100 ps. |
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SPIE |
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Prochazka, I.; Štefaňák, M.; Sobolewski, R.; Gábris, A. |
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Quantum Optics and Photon Counting; SPIE Optics + Optoelectronics, 2021, Online Only |
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1784 |
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Neroev, V. V.; Iomdina, E. N.; Khandzhyan, A. T.; Khodzhabekyan, N. V.; Sengaeva, M. D.; Ivanova, A. V.; Seliverstov, S. V.; Teplyakova, K. O.; Goltsman, G. N. |
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Experimental study of the effect of corneal hydration and its biomechanical properties on the results of photorefractive keratectomy |
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Journal Article |
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2021 |
Publication |
Vestn. Oftalmol. |
Abbreviated Journal |
Vestn. Oftalmol. |
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137 |
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3 |
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68-75 |
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THz scanning, cornea, photorefractive keratectomy, medicine |
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Water content in the cornea may affect the outcome of its excimer laser ablation, especially in presbyopic patients with myopic refraction. This hypothesis can be tested by scanning the cornea in the terahertz (THz) range to determine its hydration level.
Purpose: To study the effect of hydration of the cornea determined by non-contact THz scanning and its biomechanical parameters on the results of photorefractive keratectomy (PRK) in an experiment.
Material and methods: PRK was performed using the Nidek EC-5000 QUEST excimer laser on 8 rabbit eyes. Corneal hydration was evaluated by determining the reflection coefficient (RC) in the THz electromagnetic radiation range before PRK, after 3-5 days, and after 1, 2, 3, and 4 months. Clinical examination included autorefractometry, assessment of corneal thickness and other anatomical and optical parameters of the anterior eye segment (Galilei G6, Ziemer Ophthalmic Systems AG 6.0.2, Switzerland), measurement of corneal hysteresis (CH) and corneal resistance factor (CRF) using the Ocular Response Analyzer (ORA; Reichert, USA), as well as tear production (Schirmer test).
Results: The initial water content in the cornea has a significant effect on the thickness of the removed layer, i.e. on the PRK effect, with correlation coefficient of Rs= -0.976 (p<0.01). The correlation between CH and the ablation depth is less pronounced (Rs=0.643), and CRF had no correlation with it (Rs= -0.089). Biomechanical indicators of the cornea depend on its hydration: changes in CH and CRF after excimer laser ablation qualitatively coincide with changes in RC, the correlation coefficient between RC and the initial value of CH is R= -0.619 (moderate negative correlation).
Conclusion: THz scanning is an effective non-contact technology for monitoring corneal hydration level. The mismatch of the hypoeffect of keratorefractive excimer laser intervention planned for patients with presbyopia with the actual outcome can be caused by individual decrease in the initial water content in the cornea. |
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1794 |
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Moshkova, M. A.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
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Title |
High-efficiency multi-element superconducting single-photon detector |
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Conference Article |
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2021 |
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Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
11771 |
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2-8 |
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PNR SSPD, large active area, detection efficiency |
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We present the result of the creation and investigation of the multi-element superconducting single photon detectors, which can recognize the number of photons (up to six) in a short pulse of the radiation at telecommunication wavelengths range. The best receivers coupled with single-mode fiber have the system quantum efficiency of ⁓85%. The receivers have a 100 ps time resolution and a few nanoseconds dead time that allows them to operate at megahertz counting rate. Implementation of the multi-element architecture for creation of the superconducting single photon detectors with increased sensitive area allows to create the high efficiency receivers coupled with multi-mode fibers and with preserving of the all advantages of superconducting photon counters. |
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SPIE |
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Prochazka, I.; Štefaňák, M.; Sobolewski, R.; Gábris, A. |
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Quantum Optics and Photon Counting |
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1795 |
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Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V. |
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Development of disordered ultra-thin superconducting vanadium nitride films |
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Conference Article |
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2019 |
Publication |
Proc. 8th Int. Conf. Photonics and Information Optics |
Abbreviated Journal |
Proc. 8th Int. Conf. Photonics and Information Optics |
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425-426 |
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VN films |
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We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained. |
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978-5-7262-2536-4 |
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http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf |
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1802 |
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Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. |
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Title |
Characterization of topologies of superconducting photon number resolving detectors |
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Conference Article |
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Year |
2019 |
Publication |
Proc. 8th Int. Conf. Photonics and Information Optics |
Abbreviated Journal |
Proc. 8th Int. Conf. Photonics and Information Optics |
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465-466 |
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PNR SSPD |
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Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated. |
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978-5-7262-2536-4 |
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http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf |
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1803 |
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Мошкова, М. А.; Дивочий, А. В.; Морозов, П. В.; Антипов, А. В.; Вахтомин, Ю. Б.; Смирнов, К. В. |
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Оценка статистики распределения фотонов с использованием многоэлементного сверхпроводникового однофотонного детектора |
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Conference Article |
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Year |
2019 |
Publication |
Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского |
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201-202 |
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SSPD |
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Проведен сравнительный анализ топологий сверхпроводниковых однофотонных детекторов с способностью к разрешению до четырёх фотонов в коротком импульсе ИК излучения. Получен детектор, с системной квантовой эффективностью ~85% на λ=1550 нм. Продемонстрирована возможность его использования для распределения числа фотонов импульсного источника излучения. |
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Москва |
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МИЭМ НИУ ВШЭ |
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Russian |
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1804 |
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Золотов, Ф. И.; Смирнов, К. В. |
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Особенности осаждения разупорядоченных сверхтонких плёнок нитрида ванадия |
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Conference Article |
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2019 |
Publication |
Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского |
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204-205 |
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VN films |
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В работе изучены особенности роста сверхтонких плёнок нитрида ванадия толщиной ~10 нм. Обнаружено, что при изменении температуры подложки и общего давления газов в процессе осаждения плёнок меняется значение их поверхностного сопротивления вблизи перехода к сверхпроводящему состоянию. |
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Москва |
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МИЭМ НИУ ВШЭ |
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Russian |
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no |
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1805 |
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Kuznetsov, K. A.; Kornienko, V. V.; Vakhtomin, Y. B.; Pentin, I. V.; Smirnov, K. V.; Kitaeva, G. K. |
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Generation and detection of optical-terahertz biphotons via spontaneous parametric downconversion |
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Conference Article |
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2018 |
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Proc. ICLO |
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Proc. ICLO |
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303 |
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NbN HEB applications |
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We study spontaneous parametric downconversion (SPDC) in the strongly non-degenerate regime when the idler wave hits the terahertz range. By using the hot-electron bolometer, for the first time the SPDC-generated idler-wave photons were directly detected in the terahertz frequency range. Spectrum of corresponding signal photons was measured using standard technique by the CCD camera. Possible applications of correlated optical-terahertz biphotons are discussed. |
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International Conference Laser Optics |
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no |
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1806 |
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Райтович, А. А.; Пентин, И. В.; Золотов, Ф. И.; Селезнев, В. А.; Вахтомин, Ю. Б.; Смирнов, К. В. |
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Время энергетической релаксации электронов в сверхпроводниковых VN наноструктурах |
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Conference Article |
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2018 |
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Сборник трудов 13 Всероссийской конференции молодых ученых |
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236-238 |
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VN films |
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Саратовский филиал ИРЭ им. В.А. Котельникова РАН |
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Техно-Декор |
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Russian |
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Наноэлектроника, нанофотоника и нелинейная физика |
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Notes |
http://nnnph.ru/data/documents/Sborni-trudov-NNNF-2018.pdf |
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1807 |
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Schroeder, E.; Mauskopf, P.; Pilyavsky, G.; Sinclair, A.; Smith, N.; Bryan, S.; Mani, H.; Morozov, D.; Berggren, K.; Zhu, D.; Smirnov, K.; Vakhtomin, Y. |
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On the measurement of intensity correlations from laboratory and astronomical sources with SPADs and SNSPDs |
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Conference Article |
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2016 |
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Proc. SPIE |
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Proc. SPIE |
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9907 |
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99070P (1 to 13) |
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SPAD, NbN SSPD applications, SNSPD |
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We describe the performance of detector modules containing silicon single photon avalanche photodiodes (SPADs) and superconducting nanowire single photon detectors (SNSPDs) to be used for intensity interferometry. The SPADs are mounted in fiber-coupled and free-space coupled packages. The SNSPDs are mounted in a small liquid helium cryostat coupled to single mode fiber optic cables which pass through a hermetic feed-through. The detectors are read out with microwave amplifiers and FPGA-based coincidence electronics. We present progress on measurements of intensity correlations from incoherent sources including gas-discharge lamps and stars with these detectors. From the measured laboratory performance of the correlation system, we estimate the sensitivity to intensity correlations from stars using commercial telescopes and larger existing research telescopes. |
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SPIE |
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Malbet, F.; Creech-Eakman, M.J.; Tuthill, P.G. |
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Optical and Infrared Interferometry and Imaging V |
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1809 |
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Zolotov, P. I.; Vakhtomin, Yu. B.; Divochiy, A. V.; Seleznev, V. A.; Smirnov, K. V. |
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Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons |
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Journal Article |
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2016 |
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Proc. 5th Int. Conf. Photonics and Information Optics |
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Proc. 5th Int. Conf. Photonics and Information Optics |
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115-116 |
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NbN SSPD |
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This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures. |
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Russian |
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978-5-7262-2215-8 |
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http://fioconf.mephi.ru/files/2015/12/FIO2016-Sbornik.pdf Разработка технологии создания резонаторных структур для увеличения квантовой эффективности NBN детекторов ИК-фотонов |
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1811 |
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Корнеев, А. А.; Окунев, О. В.; Чулкова, Г. М.; Смирнов, К. В.; Милостная, И. И.; Минаева, О. В.; Корнеева, Ю. П.; Каурова, Н. С.; Воронов, Б. М.; Гольцман, Г. Н. |
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Title |
Спонтанные и фотоиндуцированные резистивные состояния в узких сверхпроводящих NbN полосках |
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Book Whole |
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2015 |
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NbN films |
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Монография посвящена актуальной проблеме современной фотоники: разработке высокочувствительных и быстродействующих сверхпроводниковых однофотонных детекторов на основе тонкой пленки NbN. В работе исследуются неравновесные процессы, протекающие в тонкой сверхпроводящей пленке после поглощения инфракрасного фотона и приводящие к возникновению резистивного состояния. На этих процессах основан механизм фотоотклика исследуемого в работе однофотонного детектора. В частности, исследуются зависимости квантовой эффективности и скорости темнового счета от геометрических параметров детектора: толщины пленки, ширины полоски, а также от величины транспортного тока детектора. Монография предназначена для студентов старших курсов, аспирантов и начинающих исследователей, работающих в области сверхпроводниковой наноэлектроники и радиофизики. |
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Москва |
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МПГУ |
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978-5-4263-0269-3 |
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УДК: 535; Число страниц: 108 |
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1812 |
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Smirnov, K.; Vachtomin, Y.; Divochiy, A.; Antipov, A.; Goltsman, G. |
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The limitation of noise equivalent power by background radiation for infrared superconducting single photon detectors coupled to standard single mode optical fibers |
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Journal Article |
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Year |
2015 |
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Rus. J. Radio Electron. |
Abbreviated Journal |
Rus. J. Radio Electron. |
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5 |
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NbN SSPD |
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We investigated the minimum level of the dark count rates and noise equivalent power of superconducting single photon detectors coupled to standard single mode optical fibers. We found that background radiation limits the minimum level of the dark count rates. We also proposed the effective method for reducing background radiation out of the required spectral range of the detector. Measured noise equivalent power of detector reaches 8.9×10-19 W×Hz1/2 at a wavelength of 1.55 μm and quantum efficiency 35%. |
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14 pages |
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1813 |
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Смирнов, Константин Владимирович; Чулкова, Галина Меркурьевна; Вахтомин, Юрий Борисович; Корнеев, Александр Александрович; Окунев, Олег Валерьевич; Дивочий, Александр Валерьевич; Семенов, Александр Владимирович; Гольцман, Григорий Наумович |
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Особенности разогрева и релаксации горячих электронов О-754 в тонкопленочных cверхпроводниковых наноструктурах и 2D полупроводниковых гетероструктурах при поглощении излучения инфракрасного и терагерцового диапазонов |
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2014 |
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2DEG |
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В монографии рассмотрены основные особенности эффекта электронного разогрева в тонких сверхпроводниковых пленках и полупроводниковых гетеропереходах, возникающего при поглощении носителями заряда излучений терагерцового и инфракрасного диапазонов.
Значительная часть монографии посвящена представлению современных достижений при использовании указанного эффекта для создания приемных устройств с рекордными характеристиками: терагерцовых гетеродинных и болометрических приемников на основе сверхпроводниковых и полупроводниковых структур; сверхпроводниковых приемников одиночных ИК фотонов. В работе также подробно рассмотрены основы современной сверхпроводниковой тонкопленочной технологии.
Монография может быть полезна студентам старших курсов, аспирантам и начинающим исследователям, работающим в области физики твердого тела, оптики, радиофизики. |
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Москва |
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МПГУ |
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Russian |
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978-5-4263-0145-0 |
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240 страниц |
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no |
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1814 |
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Гольцман, Григорий Наумович; Корнеев, Александр Александрович; Антипов, Андрей Владимирович; Минаева, Ольга Вячеславовна; Дивочий, Александр Валерьевич; Антипов, Сергей Владимирович; Вахтомин, Юрий Борисович; Смирнов, Константин Владимирович |
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Способ фильтрации фонового излучения инфракрасного диапазона |
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Patent |
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2014 |
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Issue |
RU 2510056 C1 |
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Изобретение относится к способам уменьшения интенсивности фонового излучения инфракрасного диапазона. Способ фильтрации фонового излучения инфракрасного диапазона, падающего на сверхпроводниковый однофотонный детектор, включает передачу излучения инфракрасного диапазона с длиной волны 0,4-1,8 микрометров на сверхпроводниковый однофотонный детектор при помощи одномодового волокна, частично находящегося при температуре 4,0-4,4 К. При этом длина охлаждаемого участка одномодового волокна составляет 0,2-3,5 м. Технический результат заключается в повышении надежности работы фотонных детекторов. 2 з.п. ф-лы. |
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no |
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1815 |
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Антипов, Андрей Владимирович; Дивочий, Александр Валерьевич; Вахтомин, Юрий Борисович; Финкель, Матвей Ильич; Смирнов, Константин Владимирович |
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Title |
Способ прецизионного позиционирования чувствительного элемента фотонного детектора |
Type |
Patent |
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Year |
2014 |
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RU 2506664 C1 |
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Изобретение относится к способам, позволяющим производить совмещение фотонных детекторов относительно оптического излучения. Способ прецизионного позиционирования чувствительного элемента фотонного детектора относительно амплитудно-модулированного оптического излучения включает смещение чувствительного элемента фотонного детектора постоянным током с последующей регистрацией электрического сигнала, возникающего на контактах детектора на частоте модуляции излучения. Полученный при этом сигнал используют как параметр, определяющий качество позиционирования. Обеспечивается повышение технико-эксплуатационных характеристик детектора. |
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1816 |
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Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В. |
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Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе |
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2012 |
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2DEG, AlGaAs/GaAs, NbN detectors |
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Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники. |
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Москва |
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Прометей, МПГУ |
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978-5-4263-0118-4 |
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УДК: 537.311 |
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1818 |
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Семенов, А. В.; Корнеев, А. А.; Лобанов, Ю. В.; Корнеева, Ю. П.; Рябчун, С. А.; Лаврова, О. С.; Третьяков, И. В.; Флоря, И. Н.; Силаев, М. А.; Кинев, Н. В.; Ковалюк, В. В.; Смирнов, К. В.; Гольцман, Г. Н. |
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Поляризация электромагнитной волны вблизи фокуса зеркала и системы зеркал в субтерагерцовом диапазоне частот |
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2012 |
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Современные проблемы науки и образования |
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2 |
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sub-terahertz radio telescope |
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Рассмотрено влияние оптической системы телескопа на поляризацию принимаемого электромагнитного сигнала. Описано изменение поляризации луча при отражении от произвольно ориентированной поверхности зеркала. Учтены искажения поляризации, обусловленные как отклонением лучей от первоначального направления, так и различием в коэффициентах отражения для разных поляризаций в случае неидеального отражения. В рамках метода Френеля получены оценочные формулы, дающие отношение амплитуд поля с исходной поляризацией и с поляризацией, перпендикулярной исходной, вблизи фокальной точки оптической системы. Формулы выведены для нескольких практически важных случаев, в том числе для параболического зеркала и системы двух зеркал. Оценена верхняя граница поляризационных искажений в пределах кружка Эйри. Полученные оценки согласуются с результатами численного расчёта для двухзеркального радиотелескопа субтерагерцового диапазона. |
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9 страниц; УДК 535-47 |
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1819 |
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Казаков, А. Ю.; Селиверстов, С. В.; Дивочий, А. В.; Смирнов, К. В.; Финкель, М. И.; Вахтомин, Ю. Б. |
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Возможность применения сверхпроводниковых материалов в качестве отражающего покрытия зеркала телескопа, предназначенного для наблюдений анизотропии реликтового излучения |
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2012 |
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Преподаватель ХХI век |
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3 |
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221-224 |
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submillimeter radio telescope |
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В статье исследуется возможность использования сверхпроводящего материала в качестве отражающего слоя зеркала субмиллиметрового телескопа, охлажденного до криогенных температур и предназначенного для наблюдений реликтового излучения. Для нескольких сверхпроводниковых материалов вычислен диапазон частот, в котором флуктуации теплового излучения покрытия меньше флуктуаций источника. Показана перспективность применения покрытия из Nb3Ge. |
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