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| Author | Dauler, E. A.; Kerman, A. J.; Robinson, B. S.; Yang, J. K. W.; Voronov, B. M.; Gol’tsman, G. N.; Berggren, K. K. | ||||
| Title | Achieving high counting rates in superconducting nanowire single-photon detectors | Type | Conference Article | ||
| Year | 2006 | Publication | CLEO/QELS | Abbreviated Journal | CLEO/QELS |
| Volume | Issue | Pages | JTuD3 (1 to 2) | ||
| Keywords | SSPD; SNSPD; Detectors; Photodetectors; Quantum optics; Quantum detectors; Photon counting; Photons; Pulse shaping; Quantum communications; Single photon detectors; Superconductors | ||||
| Abstract | Kinetic inductance is determined to be the primary limitation to the counting rate of superconducting nanowire single-photon counters. Approaches for overcoming this limitation will be discussed. | ||||
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| Publisher | Optical Society of America | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
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| Area | Expedition | Conference | Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1451 | |||
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| Author | Verevkin, A.; Slysz, W.; Pearlman, A.; Zhang, J.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Currie, M. | ||||
| Title | Real-time GHz-rate counting of infrared photons using nanostructured NbN superconducting detectors | Type | Conference Article | ||
| Year | 2003 | Publication | CLEO/QELS | Abbreviated Journal | CLEO/QELS |
| Volume | Issue | Pages | CThM8 | ||
| Keywords | NbN SSPD; SNSPD; Infrared; Quantum detectors; Detectors; Photon counting; Quantum communications; Quantum cryptography; Single photon detectors; Superconductors | ||||
| Abstract | We demonstrate that our ultrathin, nanometer-width NbN superconducting single-photon detectors are capable of above 1-GHz-frequency, real-time counting of near-infrared photons. The measured system jitter of the detector is below 15 ps. | ||||
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| Publisher | Optical Society of America | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
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| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1517 | |||
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| Author | Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Lo, W.; Wilsher, K. | ||||
| Title | Infrared picosecond superconducting single-photon detectors for CMOS circuit testing | Type | Conference Article | ||
| Year | 2003 | Publication | CLEO/QELS | Abbreviated Journal | CLEO/QELS |
| Volume | Issue | Pages | Cmv4 | ||
| Keywords | NbN SSPD; SNSPD; Infrared; Quantum detectors; Electron beam lithography; Infrared detectors; Infrared radiation; Quantum efficiency; Single photon detectors; Superconductors | ||||
| Abstract | Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system. | ||||
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| Publisher | Optical Society of America | Place of Publication | Editor | ||
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| Area | Expedition | Conference | Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1518 | |||
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| Author | Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. | ||||
| Title | Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time | Type | Journal Article | ||
| Year | 1996 | Publication | Phys. Rev. B Condens. Matter. | Abbreviated Journal | Phys. Rev. B Condens. Matter. |
| Volume | 53 | Issue | 12 | Pages | R7592-R7595 |
| Keywords | 2DEG, AlGaAs/GaAs heterostructures | ||||
| Abstract | We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0163-1829 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:9982274 | Approved | no | ||
| Call Number | Serial | 1612 | |||
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| Author | Iomdina, E. N.; Seliverstov, S. V.; Teplyakova, K. O.; Jani, E. V.; Pozdniakova, V. V.; Polyakova, O. N.; Goltsman, G. N. | ||||
| Title | Terahertz scanning of the rabbit cornea with experimental UVB-induced damage: in vivo assessment of hydration and its verification | Type | Journal Article | ||
| Year | 2021 | Publication | J. Biomed. Opt. | Abbreviated Journal | J. Biomed. Opt. |
| Volume | 26 | Issue | 4 | Pages | |
| Keywords | medicine; scheimpflug imaging; UVB; confocal microscopy; cornea; optical coherent tomography; rabbit eyes; terahertz radiation | ||||
| Abstract | SIGNIFICANCE: Water content plays a vital role in the normally functioning visual system; even a minor disruption in the water balance may be harmful. Today, no direct method exists for corneal hydration assessment, while it could be instrumental in early diagnosis and control of a variety of eye diseases. The use of terahertz (THz) radiation, which is highly sensitive to water content, appears to be very promising. AIM: To find out how THz scanning parameters of corneal tissue measured by an experimental setup, specially developed for in vivo contactless estimations of corneal reflectivity coefficient (RC), are related to pathological changes in the cornea caused by B-band ultraviolet (UVB) exposure. APPROACH: The setup was tested on rabbit eyes in vivo. Prior to the course of UVB irradiation and 1, 5, and 30 days after it, a series of examinations of the corneal state was made. At the same time points, corneal hydration was assessed by measuring RC. RESULTS: The obtained data confirmed the negative impact of UVB irradiation course on the intensity of tear production and on the corneal thickness and optical parameters. A significant (1.8 times) increase in RC on the 5th day after the irradiation course, followed by a slight decrease on the 30th day after it was revealed. The RC increase measured 5 days after the UVB irradiation course generally corresponded to the increase (by a factor of 1.3) of tear production. RC increase occurred with the corneal edema, which was manifested by corneal thickening (by 18.2% in the middle area and 17.6% in corneal periphery) and an increased volume of corneal tissue (by 17.6%). CONCLUSIONS: Our results demonstrate that the proposed approach can be used for in vivo contactless estimation of the reflectivity of rabbit cornea in the THz range and, thereby, of cornea hydration. | ||||
| Address | National Research University Higher School of Economics, Moscow Institute of Electronics and Mathema, Russia | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1083-3668 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:33834684; PMCID:PMC8027227 | Approved | no | ||
| Call Number | Serial | 1258 | |||
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| Author | Morozov, P.; Lukina, M.; Shirmanova, M.; Divochiy, A.; Dudenkova, V.; Gol'tsman, G. N.; Becker, W.; Shcheslavskiy, V. I. | ||||
| Title | Singlet oxygen phosphorescence imaging by superconducting single-photon detector and time-correlated single-photon counting | Type | Journal Article | ||
| Year | 2021 | Publication | Opt. Lett. | Abbreviated Journal | Opt. Lett. |
| Volume | 46 | Issue | 6 | Pages | 1217-1220 |
| Keywords | SSPD, SNSPD, applications | ||||
| Abstract | This Letter presents, to the best of our knowledge, a novel optical configuration for direct time-resolved measurements of luminescence from singlet oxygen, both in solutions and from cultured cells on photodynamic therapy. The system is based on the superconducting single-photon detector, coupled to the confocal scanner that is modified for the near-infrared measurements. The recording of a phosphorescence signal from singlet oxygen at 1270 nm has been done using time-correlated single-photon counting. The performance of the system is verified by measuring phosphorescence from singlet oxygen generated by the photosensitizers commonly used in photodynamic therapy: methylene blue and chlorin e6. The described system can be easily upgraded to the configuration when both phosphorescence from singlet oxygen and fluorescence from the cells can be detected in the imaging mode. Thus, co-localization of the signal from singlet oxygen with the areas inside the cells can be done. | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0146-9592 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:33720151 | Approved | no | ||
| Call Number | Serial | 1221 | |||
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| Author | Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. | ||||
| Title | Tunnel field-effect transistors for sensitive terahertz detection | Type | Journal Article | ||
| Year | 2021 | Publication | Nat. Commun. | Abbreviated Journal | Nat. Commun. |
| Volume | 12 | Issue | 1 | Pages | 543 |
| Keywords | field-effect transistors, bilayer graphene, BLG | ||||
| Abstract | The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. | ||||
| Address | Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2041-1723 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:33483488; PMCID:PMC7822863 | Approved | no | ||
| Call Number | Serial | 1261 | |||
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| Author | Gorokhov, G.; Bychanok, D.; Gayduchenko, I.; Rogov, Y.; Zhukova, E.; Zhukov, S.; Kadyrov, L.; Fedorov, G.; Ivanov, E.; Kotsilkova, R.; Macutkevic, J.; Kuzhir, P. | ||||
| Title | THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites | Type | Journal Article | ||
| Year | 2020 | Publication | Polymers (Basel) | Abbreviated Journal | Polymers (Basel) |
| Volume | 12 | Issue | 12 | Pages | 3037 (1 to 14) |
| Keywords | THz spectroscopy; nanocomposites, percolation threshold, time-domain spectroscopy, time-domain spectrometer, TDS | ||||
| Abstract | Polymer composites containing nanocarbon fillers are under intensive investigation worldwide due to their remarkable electromagnetic properties distinguished not only by components as such, but the distribution and interaction of the fillers inside the polymer matrix. The theory herein reveals that a particular effect connected with the homogeneity of a composite manifests itself in the terahertz range. Transmission time-domain terahertz spectroscopy was applied to the investigation of nanocomposites obtained by co-extrusion of PLA polymer with additions of graphene nanoplatelets and multi-walled carbon nanotubes. The THz peak of permittivity's imaginary part predicted by the applied model was experimentally shown for GNP-containing composites both below and above the percolation threshold. The physical nature of the peak was explained by the impact on filler particles excluded from the percolation network due to the peculiarities of filler distribution. Terahertz spectroscopy as a versatile instrument of filler distribution diagnostics is discussed. | ||||
| Address | Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu, Finland | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2073-4360 | ISBN | Medium | ||
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| Notes | PMID:33353036; PMCID:PMC7767186 | Approved | no | ||
| Call Number | Serial | 1780 | |||
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| Author | Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. | ||||
| Title | Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation | Type | Journal Article | ||
| Year | 2020 | Publication | Sci. Rep. | Abbreviated Journal | Sci. Rep. |
| Volume | 10 | Issue | 1 | Pages | 16819 |
| Keywords | VN HEB | ||||
| Abstract | The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively. | ||||
| Address | National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2045-2322 | ISBN | Medium | ||
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| Notes | PMID:33033360; PMCID:PMC7546726 | Approved | no | ||
| Call Number | Serial | 1797 | |||
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| Author | Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. | ||||
| Title | Helicity-sensitive plasmonic terahertz interferometer | Type | Journal Article | ||
| Year | 2020 | Publication | Nano Lett. | Abbreviated Journal | Nano Lett. |
| Volume | 20 | Issue | 10 | Pages | 7296-7303 |
| Keywords | graphene, plasmonic interferometer, radiation helicity, terahertz radiation | ||||
| Abstract | Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. | ||||
| Address | CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1530-6984 | ISBN | Medium | ||
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| Notes | PMID:32903004 | Approved | no | ||
| Call Number | Serial | 1781 | |||
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| Author | Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector | Type | Journal Article | ||
| Year | 2020 | Publication | Nanomaterials (Basel) | Abbreviated Journal | Nanomaterials (Basel) |
| Volume | 10 | Issue | 5 | Pages | 1-12 |
| Keywords | detector; quantum dots; short-wave infrared range; silicon | ||||
| Abstract | In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. | ||||
| Address | Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2079-4991 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:32365694; PMCID:PMC7712218 | Approved | no | ||
| Call Number | Serial | 1151 | |||
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| Author | Elezov, M.; Ozhegov, R.; Goltsman, G.; Makarov, V. | ||||
| Title | Countermeasure against bright-light attack on superconducting nanowire single-photon detector in quantum key distribution | Type | Journal Article | ||
| Year | 2019 | Publication | Opt. Express | Abbreviated Journal | Opt. Express |
| Volume | 27 | Issue | 21 | Pages | 30979-30988 |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We present an active anti-latching system for superconducting nanowire single-photon detectors. We experimentally test it against a bright-light attack, previously used to compromise security of quantum key distribution. Although our system detects continuous blinding, the detector is shown to be partially blindable and controllable by specially tailored sequences of bright pulses. Improvements to the countermeasure are suggested. | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1094-4087 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:31684339 | Approved | no | ||
| Call Number | Serial | 1275 | |||
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| Author | Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B. | ||||
| Title | Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion | Type | Journal Article | ||
| Year | 2019 | Publication | Opt. Lett. | Abbreviated Journal | Opt. Lett. |
| Volume | 44 | Issue | 5 | Pages | 1198-1201 |
| Keywords | HEB applications | ||||
| Abstract | We study parametric down-conversion (PDC) of optical laser radiation in the strongly frequency non-degenerate regime which is promising for the generation of quantum-correlated pairs of extremely different spectral ranges, the optical and the terahertz (THz) ones. The possibility to detect tenuous THz-frequency photon fluxes generated under low-gain spontaneous PDC is demonstrated using a hot electron bolometer. Then experimental dependences of the THz radiation power on the detection angle and on the pump intensity are analyzed. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0146-9592 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:30821747 | Approved | no | ||
| Call Number | Serial | 1801 | |||
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| Author | Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. | ||||
| Title | Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices | Type | Journal Article | ||
| Year | 2018 | Publication | Nanotechnol. | Abbreviated Journal | Nanotechnol. |
| Volume | 29 | Issue | 24 | Pages | 245204 (1 to 8) |
| Keywords | single layer graphene, graphene nanoribbons | ||||
| Abstract | We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity. | ||||
| Address | Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia | ||||
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| ISSN | 0957-4484 | ISBN | Medium | ||
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| Notes | PMID:29553479 | Approved | no | ||
| Call Number | Serial | 1308 | |||
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| Author | Pyatkov, F.; Khasminskaya, S.; Kovalyuk, V.; Hennrich, F.; Kappes, M. M.; Goltsman, G. N.; Pernice, W. H. P.; Krupke, R. | ||||
| Title | Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers | Type | Journal Article | ||
| Year | 2017 | Publication | Beilstein J. Nanotechnol. | Abbreviated Journal | Beilstein J. Nanotechnol. |
| Volume | 8 | Issue | Pages | 38-44 | |
| Keywords | carbon nanotubes; CNT; infrared; integrated optics devices; nanomaterials | ||||
| Abstract | Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources. | ||||
| Address | Department of Materials and Earth Sciences, Technische Universitat Darmstadt, Darmstadt 64287, Germany | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2190-4286 | ISBN | Medium | ||
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| Notes | PMID:28144563; PMCID:PMC5238692 | Approved | no | ||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1109 | ||
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| Author | Shcherbatenko, M.; Lobanov, Y.; Semenov, A.; Kovalyuk, V.; Korneev, A.; Ozhegov, R.; Kazakov, A.; Voronov, B.M.; Goltsman, G.N. | ||||
| Title | Potential of a superconducting photon counter for heterodyne detection at the telecommunication wavelength | Type | Journal Article | ||
| Year | 2016 | Publication | Opt. Express | Abbreviated Journal | Opt. Express |
| Volume | 24 | Issue | 26 | Pages | 30474-30484 |
| Keywords | NbN SSPD mixer, SNSPD | ||||
| Abstract | Here, we report on the successful operation of a NbN thin film superconducting nanowire single-photon detector (SNSPD) in a coherent mode (as a mixer) at the telecommunication wavelength of 1550 nm. Providing the local oscillator power of the order of a few picowatts, we were practically able to reach the quantum noise limited sensitivity. The intermediate frequency gain bandwidth (also referred to as response or conversion bandwidth) was limited by the spectral band of a single-photon response pulse of the detector, which is proportional to the detector size. We observed a gain bandwidth of 65 MHz and 140 MHz for 7 x 7 microm2 and 3 x 3 microm2 devices, respectively. A tiny amount of the required local oscillator power and wide gain and noise bandwidths, along with unnecessary low noise amplification, make this technology prominent for various applications, with the possibility for future development of a photon counting heterodyne-born large-scale array. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | English | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1094-4087 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:28059394 | Approved | no | ||
| Call Number | Serial | 1207 | |||
| Permanent link to this record | |||||
| Author | Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N. | ||||
| Title | Superconductivity in highly disordered NbN nanowires | Type | Journal Article | ||
| Year | 2016 | Publication | Nanotechnol. | Abbreviated Journal | Nanotechnol. |
| Volume | 27 | Issue | 47 | Pages | 47lt02 (1 to 8) |
| Keywords | NbN nanowires | ||||
| Abstract | The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links. | ||||
| Address | National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | English | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0957-4484 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:27782000 | Approved | no | ||
| Call Number | Serial | 1332 | |||
| Permanent link to this record | |||||
| Author | Vetter, A.; Ferrari, S.; Rath, P.; Alaee, R.; Kahl, O.; Kovalyuk, V.; Diewald, S.; Goltsman, G. N.; Korneev, A.; Rockstuhl, C.; Pernice, W. H. P. | ||||
| Title | Cavity-enhanced and ultrafast superconducting single-photon detectors | Type | Journal Article | ||
| Year | 2016 | Publication | Nano Lett. | Abbreviated Journal | Nano Lett. |
| Volume | 16 | Issue | 11 | Pages | 7085-7092 |
| Keywords | SSPD; SNSPD; multiphoton detection; nanophotonic circuit; photonic crystal cavity | ||||
| Abstract | Ultrafast single-photon detectors with high efficiency are of utmost importance for many applications in the context of integrated quantum photonic circuits. Detectors based on superconductor nanowires attached to optical waveguides are particularly appealing for this purpose. However, their speed is limited because the required high absorption efficiency necessitates long nanowires deposited on top of the waveguide. This enhances the kinetic inductance and makes the detectors slow. Here, we solve this problem by aligning the nanowire, contrary to usual choice, perpendicular to the waveguide to realize devices with a length below 1 mum. By integrating the nanowire into a photonic crystal cavity, we recover high absorption efficiency, thus enhancing the detection efficiency by more than an order of magnitude. Our cavity enhanced superconducting nanowire detectors are fully embedded in silicon nanophotonic circuits and efficiently detect single photons at telecom wavelengths. The detectors possess subnanosecond decay ( approximately 120 ps) and recovery times ( approximately 510 ps) and thus show potential for GHz count rates at low timing jitter ( approximately 32 ps). The small absorption volume allows efficient threshold multiphoton detection. | ||||
| Address | Institute of Physics, University of Munster , 48149 Munster, Germany | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | English | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1530-6984 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:27759401 | Approved | no | ||
| Call Number | Serial | 1208 | |||
| Permanent link to this record | |||||
| Author | Iomdina, E. N.; Goltsman, G. N.; Seliverstov, S. V.; Sianosyan, A. A.; Teplyakova, K. O.; Rusova, A. A. | ||||
| Title | Study of transmittance and reflectance spectra of the cornea and the sclera in the THz frequency range | Type | Journal Article | ||
| Year | 2016 | Publication | J. Biomed. Opt. | Abbreviated Journal | J. Biomed. Opt. |
| Volume | 21 | Issue | 9 | Pages | 97002 (1 to 5) |
| Keywords | BWO, IMPATT diode, Schottky diode, medicine, animals, cornea, physiology, humans, rabbits, sclera diagnostic imaging, physiology | ||||
| Abstract | An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells: the cornea and the sclera. Adequate control of corneal and scleral hydration is very important for early diagnosis of a variety of eye diseases, stating indications for and contraindications against keratorefractive surgeries and the choice of contact lens correction solutions. THz systems of creating images in reflected beams are likely to become ideal instruments of noninvasive control of corneal and scleral hydration degrees. This paper reports on the results of a study involving transmittance and reflectance spectra for the cornea and the sclera of rabbit and human eyes, as well as those of the rabbit eye, in the frequency range of 0.13 to 0.32 THz. The dependence of the reflectance coefficient of these tissues on water mass percentage content was determined. The experiments were performed on three corneas, three rabbit scleras, two rabbit eyes, and three human scleras. The preliminary results demonstrate that the proposed technique, based on the use of a continuous THz radiation, may be utilized to create a device for noninvasive control of corneal and scleral hydration, which has clear potential of broad practical application. | ||||
| Address | Moscow State Pedagogical University, Department of Physics, 29 Malaya Pirogovskaya Street, Moscow 119435, Russia | ||||
| Corporate Author | Thesis | ||||
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| Language | English | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1083-3668 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:27626901 | Approved | no | ||
| Call Number | Serial | 1335 | |||
| Permanent link to this record | |||||
| Author | Shcheslavskiy, V.; Morozov, P.; Divochiy, A.; Vakhtomin, Y.; Smirnov, K.; Becker, W. | ||||
| Title | Erratum: “Ultrafast time measurements by time-correlated single photon counting coupled with superconducting single photon detector” [Rev. Sci. Instrum. 87, 053117 (2016)] | Type | Miscellaneous | ||
| Year | 2016 | Publication | Rev. Sci. Instrum. | Abbreviated Journal | Rev. Sci. Instrum. |
| Volume | 87 | Issue | 6 | Pages | 069901 |
| Keywords | SSPD, SNSPD, TCSPC, jitter | ||||
| Abstract | In the original paper1the Ref. 10 should be M. Sanzaro, N. Calandri, A. Ruggeri, C. Scarcella, G. Boso, M. Buttafava, and A. Tosi, Proc. SPIE9370, 93701T (2015). | ||||
| Address | Becker & Hickl GmbH, Nahmitzer Damm 30, Berlin 12277, Germany | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0034-6748 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:27370512 | Approved | no | ||
| Call Number | Serial | 1810 | |||
| Permanent link to this record | |||||
| Author | Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. | ||||
| Title | Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes | Type | Journal Article | ||
| Year | 2015 | Publication | Nano Lett. | Abbreviated Journal | Nano Lett. |
| Volume | 15 | Issue | 12 | Pages | 7859-7866 |
| Keywords | carbon nanotubes, CNT, tunable superconductivity, van Hove singularities | ||||
| Abstract | Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube. | ||||
| Address | Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1530-6984 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 | Approved | no | ||
| Call Number | Serial | 1782 | |||
| Permanent link to this record | |||||
| Author | Murphy, A.; Semenov, A.; Korneev, A.; Korneeva, Y.; Gol'tsman, G.; Bezryadin, A. | ||||
| Title | Three temperature regimes in superconducting photon detectors: quantum, thermal and multiple phase-slips as generators of dark counts | Type | Journal Article | ||
| Year | 2015 | Publication | Sci. Rep. | Abbreviated Journal | Sci. Rep. |
| Volume | 5 | Issue | Pages | 10174 (1 to 10) | |
| Keywords | SPD, SSPD, SNSPD | ||||
| Abstract | We perform measurements of the switching current distributions of three w approximately 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter of the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijarvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors. At the highest temperatures the system enters a multiple phase-slip regime. In this range single phase-slips are unable to produce dark counts and the fluctuations in the switching current are reduced. | ||||
| Address | Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2045-2322 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:25988591; PMCID:PMC4437302 | Approved | no | ||
| Call Number | Serial | 1344 | |||
| Permanent link to this record | |||||
| Author | Kovalyuk, V.; Hartmann, W.; Kahl, O.; Kaurova, N.; Korneev, A.; Goltsman, G.; Pernice, W. H. P. | ||||
| Title | Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits | Type | Journal Article | ||
| Year | 2013 | Publication | Opt. Express | Abbreviated Journal | Opt. Express |
| Volume | 21 | Issue | 19 | Pages | 22683-22692 |
| Keywords | SSPD, SNSPD, NbN nanoeires, Si3N4 waveguides | ||||
| Abstract | We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1094-4087 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:24104155 | Approved | no | ||
| Call Number | Serial | 1213 | |||
| Permanent link to this record | |||||
| Author | Beck, M.; Rousseau, I.; Klammer, M.; Leiderer, P.; Mittendorff, M.; Winnerl, S.; Helm, M.; Gol'tsman, G.N.; Demsar, J. | ||||
| Title | Transient increase of the energy gap of superconducting NbN thin films excited by resonant narrow-band terahertz pulses | Type | Journal Article | ||
| Year | 2013 | Publication | Phys. Rev. Lett. | Abbreviated Journal | Phys. Rev. Lett. |
| Volume | 110 | Issue | 26 | Pages | 267003 (1 to 5) |
| Keywords | NbN thin films, energy gap | ||||
| Abstract | Observations of radiation-enhanced superconductivity have thus far been limited to a few type-I superconductors (Al, Sn) excited at frequencies between the inelastic scattering rate and the superconducting gap frequency 2Delta/h. Utilizing intense, narrow-band, picosecond, terahertz pulses, tuned to just below and above 2Delta/h of a BCS superconductor NbN, we demonstrate that the superconducting gap can be transiently increased also in a type-II dirty-limit superconductor. The effect is particularly pronounced at higher temperatures and is attributed to radiation induced nonthermal electron distribution persisting on a 100 ps time scale. | ||||
| Address | Department of Physics and Center for Applied Photonics, University of Konstanz, D-78457, Germany | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0031-9007 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:23848912 | Approved | no | ||
| Call Number | Serial | 1370 | |||
| Permanent link to this record | |||||
| Author | Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. | ||||
| Title | High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits | Type | Journal Article | ||
| Year | 2012 | Publication | Nat. Commun. | Abbreviated Journal | Nat. Commun. |
| Volume | 3 | Issue | Pages | 1325 (1 to 10) | |
| Keywords | waveguide SSPD | ||||
| Abstract | Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics. | ||||
| Address | Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2041-1723 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:23271658; PMCID:PMC3535416 | Approved | no | ||
| Call Number | Serial | 1375 | |||
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| Author | Sclafani, M.; Marksteiner, M.; Keir, F. M. L.; Divochiy, A.; Korneev, A.; Semenov, A.; Gol'tsman, G.; Arndt, M. | ||||
| Title | Sensitivity of a superconducting nanowire detector for single ions at low energy | Type | Journal Article | ||
| Year | 2012 | Publication | Nanotechnol. | Abbreviated Journal | Nanotechnol. |
| Volume | 23 | Issue | 6 | Pages | 065501 (1 to 5) |
| Keywords | NbN SSPD, SNSPD, superconducting single ion detector, SSID, SNSID | ||||
| Abstract | We report on the characterization of a superconducting nanowire detector for ions at low kinetic energies. We measure the absolute single-particle detection efficiency eta and trace its increase with energy up to eta = 100%. We discuss the influence of noble gas adsorbates on the cryogenic surface and analyze their relevance for the detection of slow massive particles. We apply a recent model for the hot-spot formation to the incidence of atomic ions at energies between 0.2 and 1 keV. We suggest how the differences observed for photons and atoms or molecules can be related to the surface condition of the detector and we propose that the restoration of proper surface conditions may open a new avenue for SSPD-based optical spectroscopy on molecules and nanoparticles. | ||||
| Address | Vienna Center for Quantum Science and Technology, Faculty of Physics, University of Vienna, Vienna, Austria | ||||
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| Language | English | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0957-4484 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:22248823 | Approved | no | ||
| Call Number | Serial | 1380 | |||
| Permanent link to this record | |||||
| Author | Marksteiner, M.; Divochiy, A.; Sclafani, M.; Haslinger, P.; Ulbricht, H.; Korneev, A.; Semenov, A.; Gol'tsman, G.; Arndt, M. | ||||
| Title | A superconducting NbN detector for neutral nanoparticles | Type | Journal Article | ||
| Year | 2009 | Publication | Nanotechnol. | Abbreviated Journal | Nanotechnol. |
| Volume | 20 | Issue | 45 | Pages | 455501 |
| Keywords | SSPD; SNSPD; *Electric Conductivity; Microscopy, Electron, Scanning; Nanoparticles/*chemistry/ultrastructure; Nanotechnology/*methods; *Photons | ||||
| Abstract | We present a proof-of-principle study of superconducting single photon detectors (SSPD) for the detection of individual neutral molecules/nanoparticles at low energies. The new detector is applied to characterize a laser desorption source for biomolecules and allows retrieval of the arrival time distribution of a pulsed molecular beam containing the amino acid tryptophan, the polypeptide gramicidin as well as insulin, myoglobin and hemoglobin. We discuss the experimental evidence that the detector is actually sensitive to isolated neutral particles. | ||||
| Address | University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria. markus.arndt@univie.ac.at | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0957-4484 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:19822928 | Approved | no | ||
| Call Number | Serial | 1239 | |||
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| Author | Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M. | ||||
| Title | Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses | Type | Journal Article | ||
| Year | 1993 | Publication | Opt. Lett. | Abbreviated Journal | Opt. Lett. |
| Volume | 18 | Issue | 2 | Pages | 96-97 |
| Keywords | YBCO HTS detectors | ||||
| Abstract | We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment. | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0146-9592 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:19802049 | Approved | no | ||
| Call Number | Serial | 1660 | |||
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| Author | Rosfjord, Kristine M.; Yang, Joel K. W.; Dauler, Eric A.; Kerman, Andrew J.; Vikas Anant; Voronov, Boris M.; Gol'tsman, Gregory N.; Berggren, Karl K. | ||||
| Title | Nanowire Single-photon detector with an integrated optical cavity and anti-reflection coating | Type | Journal Article | ||
| Year | 2006 | Publication | Opt. Express | Abbreviated Journal | Opt. Express |
| Volume | 14 | Issue | 2 | Pages | 527-534 |
| Keywords | SSPD, SNSPD, cavity | ||||
| Abstract | We have fabricated and tested superconducting single-photon detectors and demonstrated detection efficiencies of 57% at 1550-nm wavelength and 67% at 1064 nm. In addition to the peak detection efficiency, a median detection efficiency of 47.7% was measured over 132 devices at 1550 nm. These measurements were made at 1.8K, with each device biased to 97.5% of its critical current. The high detection efficiencies resulted from the addition of an optical cavity and anti-reflection coating to a nanowire photodetector, creating an integrated nanoelectrophotonic device with enhanced performance relative to the original device. Here, the testing apparatus and the fabrication process are presented. The detection efficiency of devices before and after the addition of optical elements is also reported. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1094-4087 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:19503367 | Approved | no | ||
| Call Number | Serial | 388 | |||
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| Author | Mohan, N.; Minaeva, O.; Gol'tsman, G. N.; Nasr, M. B.; Saleh, B. E.; Sergienko, A. V.; Teich, M. C. | ||||
| Title | Photon-counting optical coherence-domain reflectometry using superconducting single-photon detectors | Type | Journal Article | ||
| Year | 2008 | Publication | Opt. Express | Abbreviated Journal | Opt. Express |
| Volume | 16 | Issue | 22 | Pages | 18118-18130 |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We consider the use of single-photon counting detectors in coherence-domain imaging. Detectors operated in this mode exhibit reduced noise, which leads to increased sensitivity for weak light sources and weakly reflecting samples. In particular, we experimentally demonstrate the possibility of using superconducting single-photon detectors (SSPDs) for optical coherence-domain reflectometry (OCDR). These detectors are sensitive over the full spectral range that is useful for carrying out such imaging in biological samples. With counting rates as high as 100 MHz, SSPDs also offer a high rate of data acquisition if the light flux is sufficient. | ||||
| Address | Department of Biomedical Engineering, Boston University, Boston, MA 02215, USA. nm82@bu.edu | ||||
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| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1094-4087 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:18958090 | Approved | no | ||
| Call Number | Serial | 1407 | |||
| Permanent link to this record | |||||
| Author | Nasr, M. B.; Minaeva, O.; Goltsman, G. N.; Sergienko, A. V.; Saleh, B. E.; Teich, M. C. | ||||
| Title | Submicron axial resolution in an ultrabroadband two-photon interferometer using superconducting single-photon detectors | Type | Journal Article | ||
| Year | 2008 | Publication | Opt. Express | Abbreviated Journal | Opt. Express |
| Volume | 16 | Issue | 19 | Pages | 15104-15108 |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We generate ultrabroadband biphotons via the process of spontaneous parametric down-conversion in a quasi-phase-matched nonlinear grating that has a linearly chirped poling period. Using these biphotons in conjunction with superconducting single-photon detectors (SSPDs), we measure the narrowest Hong-Ou-Mandel dip to date in a two-photon interferometer, having a full width at half maximum (FWHM) of approximately 5.7 fsec. This FWHM corresponds to a quantum optical coherence tomography (QOCT) axial resolution of 0.85 µm. Our results indicate that a high flux of nonoverlapping biphotons may be generated, as required in many applications of nonclassical light. | ||||
| Address | Departments of Electrical & Computer Engineering and Physics, Quantum Imaging Laboratory, Boston University, Boston, MA 02215, USA. boshra@bu.edu | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1094-4087 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:18795048 | Approved | no | ||
| Call Number | Serial | 1408 | |||
| Permanent link to this record | |||||
| Author | Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. | ||||
| Title | Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation | Type | Journal Article | ||
| Year | 1994 | Publication | Phys. Rev. B Condens. Matter. | Abbreviated Journal | Phys. Rev. B Condens. Matter. |
| Volume | 49 | Issue | 13 | Pages | 9091-9096 |
| Keywords | YBCO films | ||||
| Abstract | The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface. | ||||
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| ISSN | 0163-1829 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:10009690 | Approved | no | ||
| Call Number | Serial | 1648 | |||
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| Author | Divochiy, Aleksander; Marsili, Francesco; Bitauld, David; Gaggero, Alessandro; Leoni, Roberto; Mattioli, Francesco; Korneev, Alexander; Seleznev, Vitaliy; Kaurova, Nataliya; Minaeva, Olga; Gol'tsman, Gregory; Lagoudakis, Konstantinos G.; Benkhaoul, Moushab; Lévy, Francis; Fiore, Andrea | ||||
| Title | Superconducting nanowire photon-number-resolving detector at telecommunication wavelengths | Type | Journal Article | ||
| Year | 2008 | Publication | Nat. Photon. | Abbreviated Journal | Nat. Photon. |
| Volume | 2 | Issue | 5 | Pages | 302-306 |
| Keywords | SSPD, photon-number-resolving | ||||
| Abstract | Optical-to-electrical conversion, which is the basis of the operation of optical detectors, can be linear or nonlinear. When high sensitivities are needed, single-photon detectors are used, which operate in a strongly nonlinear mode, their response being independent of the number of detected photons. However, photon-number-resolving detectors are needed, particularly in quantum optics, where n-photon states are routinely produced. In quantum communication and quantum information processing, the photon-number-resolving functionality is key to many protocols, such as the implementation of quantum repeaters1 and linear-optics quantum computing2. A linear detector with single-photon sensitivity can also be used for measuring a temporal waveform at extremely low light levels, such as in long-distance optical communications, fluorescence spectroscopy and optical time-domain reflectometry. We demonstrate here a photon-number-resolving detector based on parallel superconducting nanowires and capable of counting up to four photons at telecommunication wavelengths, with an ultralow dark count rate and high counting frequency. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 916 | |||
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| Author | Корнеев, А. А.; Минаева, О.; Рубцова, И.; Милостная, И.; Чулкова, Г.; Воронов, Б.; Смирнов, К.; Селезнёв, В.; Гольцман, Г.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Верёвкин, А.; Sobolewski, R. | ||||
| Title | Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN | Type | Journal Article | ||
| Year | 2005 | Publication | Квантовая электроника | Abbreviated Journal | |
| Volume | 35 | Issue | 8 | Pages | 698-700 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | Представлены результаты исследований сверхпроводящих однофотонных детекторов, изготовленных из ультратонкой пленки NbN. Развитие технологического процесса изготовления детекторов, а также снижение рабочей температуры до 2 К позволили существенно увеличить квантовую эффективность: для видимого света (λ = 0.56 мкм) она составила 30%–40%, т.е. достигла предела, определяемого коэффициентом поглощения пленки. С ростом длины волны квантовая эффективность экспоненциально падает, составляя ~20% на λ=1.55 мкм и ~0.02% на λ = 5 мкм. При скорости темнового счета ~10-4s-1 экспериментально измеренная эквивалентная мощность шума составила 1.5 × 10-20 Вт/Гц-1/2; в дальнейшем она может быть уменьшена до рекордно низкого значения 5 × 10-21 Вт/Гц-1/2. Временное разрешение детектора равно 30 пс. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Duplicated as 383 (Superconducting single-photon ultrathin NbN film detector) | Approved | no | ||
| Call Number | Serial | 382 | |||
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| Author | Gershenzon, E. M.; Gogidze, I. G.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Picosecond response on optical-range emission in thin YBaCuO films | Type | Journal Article | ||
| Year | 1991 | Publication | Pisma v Zhurnal Tekhnicheskoi Fiziki | Abbreviated Journal | Pisma v Zhurnal Tekhnicheskoi Fiziki |
| Volume | 17 | Issue | 22 | Pages | 6-10 |
| Keywords | YBCO HTS detectors | ||||
| Abstract | Целью настоящей работы является целенаправленный поиск пико-секундного отклика на оптическое излучение выяснение оптимальных условий его наблюдения, а также сравнение характеристик неравновесных эффектов в оптическом и субмиллиметровом диапазонах. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1684 | |||
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| Author | Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. | ||||
| Title | The excitonic Zeeman effect in uniaxially-strained germanium | Type | Journal Article | ||
| Year | 1987 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 65 | Issue | 6 | Pages | 1233-1241 |
| Keywords | Ge, Zeeman effect | ||||
| Abstract | We have carried out a high-resolution spectroscopic study of the absorption of submillimeter radiation by free excitons in germanium compressed along the [ 1 11 ] axis in a magnetic field parallel to the compression axis. In particular, we studied the splitting of the 1s- 2p transition in fields up to 6 kOe at T = 1.6 K, and observed a complex pattern in the Zeeman splitting which we believe is related to the effect of thermal motion of the excitons in a magnetic field on their internal structure (the magneto-Stark effect). The calculated submillimeter spectrum of excitons agrees with the experimental data. We predict that in a magnetic field the energy of the 2p, term is a minimum at a finite value of the exciton momentum perpendicular to the field-that is, the energy minimum forms a ring in momentum space. It follows that the density of states for this term must be a nonmonotonic function of the energy. A theory is developed of analogous phenomena in positronium. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1705 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. | ||||
| Title | Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium | Type | Journal Article | ||
| Year | 1986 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 64 | Issue | 4 | Pages | 889-897 |
| Keywords | Ge, trapping of free carriers | ||||
| Abstract | Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3). | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1707 | |||
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| Author | Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Electron-phonon interaction in ultrathin Nb films | Type | Journal Article | ||
| Year | 1990 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 70 | Issue | 3 | Pages | 505-511 |
| Keywords | Nb films | ||||
| Abstract | A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms. 1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated. |
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| Notes | Approved | no | |||
| Call Number | Serial | 241 | |||
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| Author | Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Heating of electrons in a superconductor in the resistive state by electromagnetic radiation | Type | Journal Article | ||
| Year | 1984 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 59 | Issue | 2 | Pages | 442-450 |
| Keywords | Nb HEB | ||||
| Abstract | The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ phisix @ | Serial | 983 | ||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
| Title | Kinetics of electron and hole binding into excitons in germanium | Type | Journal Article | ||
| Year | 1983 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 57 | Issue | 2 | Pages | 369-376 |
| Keywords | Ge, electron and hole binding | ||||
| Abstract | The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1711 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. | ||||
| Title | Capture of photoexcited carriers by shallow impurity centers in germanium | Type | Journal Article | ||
| Year | 1979 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 50 | Issue | 4 | Pages | 728-734 |
| Keywords | Ge, photoexcited carriers, shallow impurity centers | ||||
| Abstract | Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1720 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Population and lifetime of excited states of shallow impurities in Ge | Type | Journal Article | ||
| Year | 1979 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 49 | Issue | 2 | Pages | 355-362 |
| Keywords | Ge, photothermal ionization, shallow impurities | ||||
| Abstract | An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1719 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. | ||||
| Title | Energy spectrum of acceptors in germanium and its response to a magnetic field | Type | Journal Article | ||
| Year | 1977 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 45 | Issue | 4 | Pages | 769-776 |
| Keywords | p-Ge, photoconductivity, energy spectrum, magnetic field | ||||
| Abstract | We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1727 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. | ||||
| Title | Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field | Type | Journal Article | ||
| Year | 1977 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 45 | Issue | 3 | Pages | 555-565 |
| Keywords | Ge, GaAs, magnetic field, donors, energy spectrum | ||||
| Abstract | The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1728 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Investigation of free excitons in Ge and their condensation at submillimeter wavelengths | Type | Journal Article | ||
| Year | 1976 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 43 | Issue | 1 | Pages | 116-122 |
| Keywords | Ge, free excitons | ||||
| Abstract | Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1731 | |||
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| Author | Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
| Title | Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons | Type | Journal Article | ||
| Year | 1975 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 40 | Issue | 2 | Pages | 311-315 |
| Keywords | Ge, cyclotron resonance | ||||
| Abstract | Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1768 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Submillimeter spectroscopy of semiconductors | Type | Journal Article | ||
| Year | 1973 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 37 | Issue | 2 | Pages | 299-304 |
| Keywords | semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons | ||||
| Abstract | The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1735 | |||
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| Author | Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. | ||||
| Title | High resolution THz gas spectrometer based on semiconductor and superconductor devices | Type | Conference Article | ||
| Year | 2017 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 132 | Issue | Pages | 02001 (1 to 2) | |
| Keywords | NbN HEB mixers, detectors, THz spectroscopy | ||||
| Abstract | The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1328 | |||
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| Author | Lobanov, Y. V.; Shcherbatenko, M. L.; Semenov, A. V.; Kovalyuk, V. V.; Korneev, A. A.; Goltsman, G. N.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. | ||||
| Title | Heterodyne spectroscopy with superconducting single-photon detector | Type | Conference Article | ||
| Year | 2017 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 132 | Issue | Pages | 01005 | |
| Keywords | SSPD mixer, SNSPD | ||||
| Abstract | We demonstrate successful operation of a Superconducting Single Photon Detector (SSPD) as the core element in a heterodyne receiver. Irradiating the SSPD by both a local oscillator power and signal power simultaneously, we observed beat signal at the intermediate frequency of a few MHz. Gain bandwidth was found to coincide with the detector single pulse width, where the latter depends on the detector kinetic inductance, determined by the superconducting nanowire length. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1205 | |||
| Permanent link to this record | |||||
| Author | Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. | ||||
| Title | Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system | Type | Conference Article | ||
| Year | 2017 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 132 | Issue | Pages | 01004 (1 to 2) | |
| Keywords | QKD, SSPD, SNSPD | ||||
| Abstract | Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched” in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1327 | |||
| Permanent link to this record | |||||
| Author | Florya, I. N.; Korneeva, Y. P.; Sidorova, M. V.; Golikov, A. D.; Gaiduchenko, I. A.; Fedorov, G. E.; Korneev, A. A.; Voronov, B. M.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. | ||||
| Title | Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs | Type | Conference Article | ||
| Year | 2015 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
| Volume | 103 | Issue | Pages | 10004 (1 to 2) | |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model. | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1351 | |||
| Permanent link to this record | |||||
| Author | Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. | ||||
| Title | Response of graphene based gated nanodevices exposed to THz radiation | Type | Conference Article | ||
| Year | 2015 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
| Volume | 103 | Issue | Pages | 10003 (1 to 2) | |
| Keywords | graphene field-effect transistor, FET | ||||
| Abstract | In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1350 | |||
| Permanent link to this record | |||||
| Author | Elezov, M. S.; Ozhegov, R. V.; Kurochkin, Y. V.; Goltsman, G. N.; Makarov, V. S.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. | ||||
| Title | Countermeasures against blinding attack on superconducting nanowire detectors for QKD | Type | Conference Article | ||
| Year | 2015 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 103 | Issue | Pages | 10002 (1 to 2) | |
| Keywords | SSPD, SNSPD, QKD | ||||
| Abstract | Nowadays, the superconducting single-photon detectors (SSPDs) are used in Quantum Key Distribution (QKD) instead of single-photon avalanche photodiodes. Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing technique. We developed the autoreset system which returns the SSPD to superconducting state when it is latched. We investigate latched state of the SSPD and define limit conditions for effective blinding attack. Peculiarity of the blinding attack is a long nonsingle photon response of the SSPD. It is much longer than usual single photon response. Besides, we need follow up response duration of the SSPD. These countermeasures allow us to prevent blind attack on SSPDs for Quantum Key Distribution. | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1352 | |||
| Permanent link to this record | |||||
| Author | Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. | ||||
| Title | New generation of superconducting nanowire single-photon detectors | Type | Conference Article | ||
| Year | 2015 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
| Volume | 103 | Issue | Pages | 01006 (1 to 2) | |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We present an overview of recent results for new generation of infrared and optical superconducting nanowire single-photon detectors (SNSPDs) that has already demonstrated a performance that makes them devices-of-choice for many applications. SNSPDs provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, SNSPDs are also compatible with an integrated optical platform as a crucial requirement for applications in emerging quantum photonic technologies. By embedding SNSPDs in nanophotonic circuits we realize waveguide integrated single photon detectors which unite all desirable detector properties in a single device. | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1349 | |||
| Permanent link to this record | |||||
| Author | Смирнов, Константин Владимирович | ||||
| Title | Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе | Type | Manuscript | ||
| Year | 2000 | Publication | М. МПГУ | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords | 2DEG, AlGaAs/GaAs heterostructures, NbN films | ||||
| Abstract | Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств. | ||||
| Address | Москва, МПГУ | ||||
| Corporate Author | Thesis | Ph.D. thesis | |||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1830 | |||
| Permanent link to this record | |||||
| Author | Pyatkov, Felix; Khasminskaya, Svetlana; Fütterling, Valentin; Fechner, Randy; Słowik, Karolina; Ferrari, Simone; Kahl1, Oliver; Kovalyuk, Vadim; Rath, Patrik; Vetter, Andreas; Flavel, Benjamin S.; Hennrich, Frank; Kappes, Manfred M.; Gol’tsman, Gregory N.; Korneev, Alexander; Rockstuhl, Carsten; Krupke, Ralph; Pernice, Wolfram H. P. | ||||
| Title | Carbon nanotubes as exceptional electrically driven on-chip light sources | Type | Miscellaneous | ||
| Year | 2016 | Publication | 2Physics | Abbreviated Journal | 2Physics |
| Volume | Issue | Pages | |||
| Keywords | carbon nanotubes, CNT | ||||
| Abstract | Carbon nanotubes (CNTs) belong to the most exciting objects of the nanoworld. Typically, around 1 nm in diameter and several microns long, these cylindrically shaped carbon-based structures exhibit a number of exceptional mechanical, electrical and optical characteristics [1]. In particular, they are promising ultra-small light sources for the next generation of optoelectronic devices, where electrical components are interconnected with photonic circuits. Few years ago, we demonstrated that electically driven CNTs can serve as waveguide-integrated light sources [2]. Progress in the field of nanotube sorting, dielectrophoretical site-selective deposition and efficient light coupling into underlying substrate has made CNTs suitable for wafer-scale fabrication of active hybrid nanophotonic devices [2,3]. Recently we presented a nanotube-based waveguide integrated light emitters with tailored, exceptionally narrow emission-linewidths and short response times [4]. This allows conversion of electrical signals into well-defined optical signals directly within an optical waveguide, as required for future on-chip optical communication. Schematics and realization of this device is shown in Figure 1. The devices were manufactured by etching a photonic crystal waveguide into a dielectric layer following electron beam lithography. Photonic crystals are nanostructures that are also used by butterflies to give the impression of color on their wings. The same principle has been used in this study to select the color of light emitted by the CNT. The precise dimensions of the structure were numerically simulated to tailor the properties of the final device. Metallic contacts in the vicinity to the waveguide were fabricated to provide electrical access to CNT emitters. Finally, CNTs, sorted by structural and electronic properties, were deposited from a solution across the waveguide using dielectrophoresis, which is an electric-field-assisted deposition technique. |
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| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2372-1782 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1219 | |||
| Permanent link to this record | |||||
| Author | Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz | Type | Journal Article | ||
| Year | 2004 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 17 | Issue | 5 | Pages | S224-S228 |
| Keywords | NbN HEB mixers | ||||
| Abstract | NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance. | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0953-2048 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 558 | |||
| Permanent link to this record | |||||
| Author | Semenov, Alexei D; Gol'tsman, Gregory N; Sobolewski, Roman | ||||
| Title | Hot-electron effect in superconductors and its applications for radiation sensors | Type | Journal Article | ||
| Year | 2002 | Publication | Superconductor Science and Technology | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 15 | Issue | 4 | Pages | R1-R16 |
| Keywords | HEB, SSPD | ||||
| Abstract | The paper reviews the main aspects of nonequilibrium hot-electron phenomena in superconductors and various theoretical models developed to describe the hot-electron effect. We discuss implementation of the hot-electron avalanche mechanism in superconducting radiation sensors and present the most successful practical devices, such as terahertz mixers and direct intensity detectors, for far-infrared radiation. Our presentation also includes the novel approach to hot-electron quantum detection implemented in superconducting x-ray to optical photon counters. | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0953-2048 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 416 | |||
| Permanent link to this record | |||||
| Author | Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G. | ||||
| Title | New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect | Type | Journal Article | ||
| Year | 2001 | Publication | J. Vac. Sci. Technol. B | Abbreviated Journal | J. Vac. Sci. Technol. B |
| Volume | 19 | Issue | 6 | Pages | 2766-2769 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics. | ||||
| Address | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0734211X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1542 | |||
| Permanent link to this record | |||||
| Author | Лесс, Ю. А.; Кирсанов, Ю. А. | ||||
| Title | Былое и думы. Посвящение эпохе Н. Н. Малова, Е. М. Гершензона, В. С. Эткина | Type | Miscellaneous | ||
| Year | 2015 | Publication | ПРФЛ | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords | физфак МПГУ, физфак МГПИ, ПРФЛ | ||||
| Abstract | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1132 | |||
| Permanent link to this record | |||||
| Author | Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A. | ||||
| Title | Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures | Type | Abstract | ||
| Year | 2019 | Publication | Proc. Amorphous and Nanostructured Chalcogenides | Abbreviated Journal | Proc. Amorphous and Nanostructured Chalcogenides |
| Volume | Issue | Pages | 47-48 | ||
| Keywords | optical waveguides | ||||
| Abstract | The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Technical University of Moldova | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Poster | Approved | no | ||
| Call Number | Serial | 1281 | |||
| Permanent link to this record | |||||
| Author | Jiang, L.; Zhang, W.; Yao, Q. J.; Lin, Z. H.; Li, J.; Shi, S. C.; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. | ||||
| Title | Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer | Type | Conference Article | ||
| Year | 2005 | Publication | Proc. PIERS | Abbreviated Journal | Proc. PIERS |
| Volume | 1 | Issue | 5 | Pages | 587-590 |
| Keywords | NbN HEB mixers | ||||
| Abstract | In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolome-ter) mixer measured at 500 GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled bya 4-K close-cycled refrigerator. Its receiver noise temperature and conversion gain are thoroughly investigatedfor different LO pumping levels and dc biases. The lowest receiver noise temperature is found to be approxi-mately 1200 K, and reduced to about 445 K after correcting theloss of the measurement system. The stabilityof the mixer’s IF output power is also demonstrated. | ||||
| Address | Hangzhou, China | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1931-7360 | ISBN | Medium | ||
| Area | Expedition | Conference | Progress In Electromagnetics Research Symposium | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1482 | |||
| Permanent link to this record | |||||
| Author | Елезов, М. С.; Тархов, М. А.; Дивочий, А. В.; Вахтомин, Ю. Б.; Гольцман, Г. Н. | ||||
| Title | Система регистрации одиночных фотонов в видимом и ближнем инфракрасном диапазонах | Type | Conference Article | ||
| Year | 2010 | Publication | Науч. сессия НИЯУ МИФИ | Abbreviated Journal | |
| Volume | Issue | Pages | 94-95 | ||
| Keywords | SSPD | ||||
| Abstract | |||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-7262-1227-2 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ sasha @ елезов2010система | Serial | 1032 | ||
| Permanent link to this record | |||||
| Author | Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory | ||||
| Title | Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors | Type | Abstract | ||
| Year | 2020 | Publication | Graphene and 2dm Virt. Conf. | Abbreviated Journal | Graphene and 2DM Virt. Conf. |
| Volume | Issue | Pages | |||
| Keywords | single layer graphene, SLG, CVD, plasmons, FET | ||||
| Abstract | Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464. | ||||
| Address | Grenoble, France | ||||
| Corporate Author | Thesis | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | Graphene and 2dm Virtual Conference & Expo | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1743 | |||
| Permanent link to this record | |||||
| Author | Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. | ||||
| Title | Механизм преобразования частоты в n-InSb-смесителе | Type | Journal Article | ||
| Year | 1991 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 25 | Issue | 11 | Pages | 1986-1998 |
| Keywords | n-InSb mixer | ||||
| Abstract | Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1753 | |||
| Permanent link to this record | |||||
| Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.; Гусинский, Э. Н.; Литвак-Горская, Л. Б. | ||||
| Title | Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла | Type | Journal Article | ||
| Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 24 | Issue | 12 | Pages | 2145-2150 |
| Keywords | Hall constant, concentration of impurities, p-Si | ||||
| Abstract | На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1754 | |||
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| Author | Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. | ||||
| Title | Влияние магнитного поля на захват свободных носителей мелкими примесями в Ge | Type | Journal Article | ||
| Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 24 | Issue | 10 | Pages | 1881-1883 |
| Keywords | impurities, photoconductivity, Ge, capture of free carriers, magnetic field | ||||
| Abstract | Цель настоящей работы — измерение кинетики примесной фотопроводимости в квантующих магнитных полях. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1755 | |||
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| Author | Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б. | ||||
| Title | Кинетические явления в компенсированном n-InSb при низких температурах | Type | Journal Article | ||
| Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 24 | Issue | 1 | Pages | 3-24 |
| Keywords | compensated n-InSb, impurities | ||||
| Abstract | Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1756 | |||
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| Author | Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. | ||||
| Title | Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge | Type | Journal Article | ||
| Year | 1989 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 23 | Issue | 8 | Pages | 1356-1361 |
| Keywords | Ge, crystallography | ||||
| Abstract | Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. | ||||
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| Notes | Duplicated as 1692 | Approved | no | ||
| Call Number | Serial | 1691 | |||
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| Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. | ||||
| Title | Особенности температурной зависимости холловской подвижности в легированных и некомпенсированных полупроводниках | Type | Journal Article | ||
| Year | 1989 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 23 | Issue | 2 | Pages | 338-345 |
| Keywords | weakly compensated Si, Ge, doped, Hall mobility | ||||
| Abstract | На примере легированного и слабо компенсированного Si⟨B⟩ проведены исследования особенностей температурной зависимости подвижности при различных механизмах рассеяния. Уточнен метод определения концентрации компенсирующей примеси по μI(T). Полученные результаты обсуждаются и для Ge. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1758 | |||
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| Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. | ||||
| Title | Об одном способе определения концентрации глубоких примесей в германии | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 10 | Pages | 1896-1898 |
| Keywords | Ge, deep impurities | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1762 | |||
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| Author | Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. | ||||
| Title | Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 10 | Pages | 1873-1876 |
| Keywords | compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1763 | |||
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| Author | Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Кагане, М. Л.; Мултановский, В. В.; Птицина, Н. Г. | ||||
| Title | Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 8 | Pages | 1430-1437 |
| Keywords | BWO spectroscopy, pure semiconductors, residual impurities | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Duplicated as 1714 | Approved | no | ||
| Call Number | Serial | 1712 | |||
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| Author | Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. | ||||
| Title | О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 3 | Pages | 499-501 |
| Keywords | shallow neutral impurities, capture, inverse distribution function, Si | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1764 | |||
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| Author | Гольцман, Г. Н.; Птицина, Н. Г.; Ригер, Е. Р. | ||||
| Title | Оже-рекомбинация свободных носителей на мелких донорах в германии | Type | Journal Article | ||
| Year | 1984 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 18 | Issue | 9 | Pages | 1684-1686 |
| Keywords | Ge, free carrier recombination | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1710 | |||
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| Author | Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. | ||||
| Title | Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ | Type | Journal Article | ||
| Year | 1986 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 20 | Issue | 1 | Pages | 99-103 |
| Keywords | n-Ge, Hubbard upper zone conductivity, negative magnetoresistance | ||||
| Abstract | В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1759 | |||
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| Author | Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. | ||||
| Title | О механизме динамического сужения линии ЭПР доноров фосфора в кремнии | Type | Journal Article | ||
| Year | 1984 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 18 | Issue | 3 | Pages | 421-425 |
| Keywords | Si, phosphorus donors, EPR | ||||
| Abstract | Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1761 | |||
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| Author | Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. | ||||
| Title | Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца | Type | Journal Article | ||
| Year | 1985 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 19 | Issue | 9 | Pages | 1696-1698 |
| Keywords | uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1760 | |||
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| Author | Гершензон, Е. М.; Гершензон, М. Е.; Гольцман, Г. Н.; Люлькин, А. М.; Семенов, А. Д.; Сергеев, А. В. | ||||
| Title | О предельных характеристиках быстродействующих серхпроводниковых болометров | Type | Journal Article | ||
| Year | 1989 | Publication | Журнал технической физики | Abbreviated Journal | Журнал технической физики |
| Volume | 59 | Issue | 2 | Pages | 111-120 |
| Keywords | HEB | ||||
| Abstract | Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. | ||||
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| Notes | Duplicated as 237 | Approved | no | ||
| Call Number | Serial | 238 | |||
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| Author | Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Prospects for using high-temperature superconductors to create electron bolometers | Type | Journal Article | ||
| Year | 1989 | Publication | Pisma v Zhurnal Tekhnicheskoi Fiziki | Abbreviated Journal | Pisma v Zhurnal Tekhnicheskoi Fiziki |
| Volume | 15 | Issue | 14 | Pages | 88-93 |
| Keywords | HTS HEB | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0320-0116 | ISBN | Medium | ||
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| Notes | Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров | Approved | no | ||
| Call Number | Serial | 1693 | |||
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| Author | Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D. | ||||
| Title | Fast-response superconducting electron bolometer | Type | Journal Article | ||
| Year | 1989 | Publication | Pisma v Zhurnal Tekhnicheskoi Fiziki | Abbreviated Journal | Pisma v Zhurnal Tekhnicheskoi Fiziki |
| Volume | 15 | Issue | 3 | Pages | 88-92 |
| Keywords | Nb HEB | ||||
| Abstract | The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1694 | |||
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| Author | Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. | ||||
| Title | Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure | Type | Journal Article | ||
| Year | 1989 | Publication | Sov. Phys. and Technics of Semiconductors | Abbreviated Journal | Sov. Phys. and Technics of Semiconductors |
| Volume | 23 | Issue | 8 | Pages | 843-846 |
| Keywords | Ge, crystallography | ||||
| Abstract | Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. | ||||
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| Notes | Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge | Approved | no | ||
| Call Number | Serial | 1692 | |||
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| Author | Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. | ||||
| Title | Capture of free holes by charged acceptors in uniaxially deformed Ge | Type | Journal Article | ||
| Year | 1988 | Publication | Fizika i Tekhnika Poluprovodnikov | Abbreviated Journal | Fizika i Tekhnika Poluprovodnikov |
| Volume | 22 | Issue | 3 | Pages | 540-543 |
| Keywords | Ge, free holes, capture | ||||
| Abstract | Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge | Approved | no | ||
| Call Number | Serial | 1698 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Limiting characteristic of fast superconducting bolometers | Type | Journal Article | ||
| Year | 1989 | Publication | Sov. Phys.-Tech. Phys. | Abbreviated Journal | Sov. Phys.-Tech. Phys. |
| Volume | 34 | Issue | Pages | 195-199 | |
| Keywords | HEB | ||||
| Abstract | Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. | ||||
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| Notes | О предельных характеристиках быстродействующих серхпроводниковых болометров | Approved | no | ||
| Call Number | Serial | 237 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Limiting characteristics of fast-response superconducting bolometers | Type | Journal Article | ||
| Year | 1989 | Publication | Zhurnal Tekhnicheskoi Fiziki | Abbreviated Journal | Zhurnal Tekhnicheskoi Fiziki |
| Volume | 59 | Issue | 2 | Pages | 11-120 |
| Keywords | HEB | ||||
| Abstract | Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. | ||||
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| Series Editor | Series Title | Abbreviated Series Title | |||
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| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1696 | |||
| Permanent link to this record | |||||
| Author | Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Sobolewski, Roman; Minaeva, O.; Kaurova, N.; Korneev, A.; Voronov, B.; Milostnaya, I.; Gol'Tsman, Gregory | ||||
| Title | Nanosecond, transient resistive state in two-dimensional superconducting stripes | Type | Abstract | ||
| Year | 2006 | Publication | Proc. APS March Meeting | Abbreviated Journal | Proc. APS March Meeting |
| Volume | Issue | Pages | H38.13 | ||
| Keywords | NbN stripes | ||||
| Abstract | We have observed, nanosecond-in-duration, transient voltage pulses, generated across two-dimensional (2-D) NbN stripes (width: 100--500 nm; thickness: 3.5--10 nm) of various lengths (1--500 μm), when the wires were completely isolated from the outside world, biased at currents close to the critical current, and kept at temperatures below the mean-field critical temperature Tco. In 2-D superconducting films, at temperatures below the Kosterlitz-Thouless transition, all vortices are bound and the resistance is zero. However, these vortices can get unbound when a large enough transport current is applied. The latter results in a transient resistive state, which manifests itself as spontaneous, 2.5--8-ns-long voltage pulses with the amplitude corresponding to the unbinding potential of a vortex pair. In our 100-nm-wide stripes, we have also observed the formation of phase slip centers (PSCs) at temperatures close to Tco, and a mixture of PSCs and unbound vortex-antivortex pairs at low temperatures. | ||||
| Address | Baltimore, MD | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1454 | |||
| Permanent link to this record | |||||
| Author | Bell, Matthew; Sergeev, Andrei; Goltsman, Gregory; Bird, Jonathan; Verevkin, Aleksandr | ||||
| Title | Transition-edge sensors based on superconducting nanowires | Type | Abstract | ||
| Year | 2006 | Publication | Proc. APS March Meeting | Abbreviated Journal | Proc. APS March Meeting |
| Volume | Issue | Pages | B38.00001 | ||
| Keywords | NbN nanowire TES | ||||
| Abstract | We present our experimental study of superconducting NbN nanowire-based sensor. The responsivity of the sensor is strongly affected by the superconducting transition width of the nanostructure, which, in turn, is determined by the phase slip centers (PCSs) dynamics. The fluctuations and noise properties of the sensor are also discussed, as well as the devices' behavior at high magnetic fields. The ultimate performance of the sensor and prospects of the devices will be discussed, as well. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1455 | |||
| Permanent link to this record | |||||
| Author | Semenov, A.; Goltsman, G.; Korneev, A. | ||||
| Title | Quantum detection by current carrying superconducting film | Type | Journal Article | ||
| Year | 2001 | Publication | Phys. C: Supercond. | Abbreviated Journal | Phys. C: Supercond. |
| Volume | 351 | Issue | 4 | Pages | 349-356 |
| Keywords | quantum detection, phase slip centers, quasiparticle diffusion | ||||
| Abstract | We describe a novel quantum detection mechanism in the superconducting film carrying supercurrent. The mechanism incorporates growing normal domain and breaking of superconductivity by the bias current. A single photon absorbed in the film creates transient normal spot that causes redistribution of the current and, consequently, increase of the current density in superconducting areas. When the current density exceeds the critical value, the film switches into resistive state and generates the voltage pulse. Analysis shows that a submicron-wide film of conventional low temperature superconductor operated in liquid helium may detect single far-infrared photon. The amplitude and duration of the voltage pulse are in the millivolt and picosecond range, respectively. The quantitative model is presented that allows simulation of the detector utilizing this detection mechanism. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0921-4534 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 507 | |||
| Permanent link to this record | |||||
| Author | Kurochkin, V. L.; Zverev, A. V.; Kurochkin, Y. V.; Ryabtsev, I. I.; Neizvestnyi, I. G.; Ozhegov, R. V.; Gol’tsman, G. N.; Larionov, P. A. | ||||
| Title | Long-distance fiber-optic quantum key distribution using superconducting detectors | Type | Conference Article | ||
| Year | 2015 | Publication | Proc. Optoelectron. Instrum. | Abbreviated Journal | Proc. Optoelectron. Instrum. |
| Volume | 51 | Issue | 6 | Pages | 548-552 |
| Keywords | QKD, SSPD, SNSPD | ||||
| Abstract | This paper presents the results of experimental studies on quantum key distribution in optical fiber using superconducting detectors. Key generation was obtained on an experimental setup based on a self-compensation optical circuit with an optical fiber length of 101.1 km. It was first shown that photon polarization encoding can be used for quantum key distribution in optical fiber over a distance in excess of 300 km. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 8756-6990 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1342 | |||
| Permanent link to this record | |||||
| Author | Nikogosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V. | ||||
| Title | Effect of absorption on the efficiency of terahertz radiation generation in the metal waveguide partially filled with nonlinear crystal LiNbO3, DAST or ZnTe | Type | Journal Article | ||
| Year | 2019 | Publication | J. Contemp. Phys. | Abbreviated Journal | J. Contemp. Phys. |
| Volume | 54 | Issue | 1 | Pages | 97-104 |
| Keywords | nonlinear crystal, THz, waveguide | ||||
| Abstract | The influence of terahertz (THz) radiation absorption on the efficiency of generation of coherent THz radiation in the system ‘nonlinear-optical crystal partially filling the cross section of a rectangular metal waveguide’ has been investigated. The efficiency of the nonlinear frequency conversion of optical laser radiation to the THz range depends on the loss in the system and the fulfillment of the phase-matching (FM) condition in a nonlinear crystal. The method of partially filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. The phase matching is achieved by numerical determination of the thickness of the nonlinear crystal, that is the degree of partial filling of the waveguide. The attenuation of THz radiation caused by losses both in the metal walls of the waveguide and in the crystal was studied, taking into account the dimension of the cross section of the waveguide, the degree of partial filling, and the dielectric constant of the crystal. It is shown that the partial filling of the waveguide with a nonlinear crystal results in an increase in the efficiency of generation of THz radiation by an order of magnitude, owing to the decrease in absorption. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1068-3372 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1289 | |||
| Permanent link to this record | |||||
| Author | Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. | ||||
| Title | Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures | Type | Journal Article | ||
| Year | 2010 | Publication | Bull. Russ. Acad. Sci. Phys. | Abbreviated Journal | Bull. Russ. Acad. Sci. Phys. |
| Volume | 74 | Issue | 1 | Pages | 100-102 |
| Keywords | 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth | ||||
| Abstract | The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1062-8738 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1217 | |||
| Permanent link to this record | |||||
| Author | Gol'tsman, G.; Maslennikov, S.; Finkel, M.; Antipov, S.; Kaurova, N.; Grishina, E.; Polyakov, S.; Vachtomin, Y.; Svechnikov, S.; Smirnov, K.; Voronov, B. | ||||
| Title | Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer | Type | Conference Article | ||
| Year | 2006 | Publication | Proc. MRS | Abbreviated Journal | Proc. MRS |
| Volume | 935 | Issue | Pages | 210 (1 to 6) | |
| Keywords | NbN HEB mixers | ||||
| Abstract | Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0272-9172 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1440 | |||
| Permanent link to this record | |||||
| Author | Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. | ||||
| Title | Noise equivalent temperature difference of a superconducting integrated terahertz receiver | Type | Journal Article | ||
| Year | 2009 | Publication | J. Commun. Technol. Electron. | Abbreviated Journal | J. Commun. Technol. Electron. |
| Volume | 54 | Issue | 6 | Pages | 716-720 |
| Keywords | SIS mixer SIR NETD, FFO, harmonic mixer | ||||
| Abstract | The dependence of the noise equivalent temperature difference (NETD) of a superconducting integrated receiver (SIR) on the receiver noise temperature and the inputsignal level has been investigated. An unprecedented NETD of 13±2 mK has been measured at a SIR noise temperature of 200 K, intermediate-frequency bandwidth of 4 GHz, and time constant of 1 s. With a decrease in the input signal, an improvement in the NETD is observed. This effect is explained by a reduction in the influence of the instabilities of the receiver power supply and the amplification circuit that occur when the input signal is decreased. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1064-2269 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1400 | |||
| Permanent link to this record | |||||
| Author | Tret’yakov, I. V.; Ryabchun, S. A.; Kaurova, N. S.; Larionov, P. A.; Lobastova, A. A.; Voronov, B. M.; Finkel, M. I.; Gol’tsman, G. N. | ||||
| Title | Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer | Type | Journal Article | ||
| Year | 2010 | Publication | Tech. Phys. Lett. | Abbreviated Journal | Tech. Phys. Lett. |
| Volume | 36 | Issue | 12 | Pages | 1103-1105 |
| Keywords | NbN HEB mixer | ||||
| Abstract | Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7850 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1389 | |||
| Permanent link to this record | |||||
| Author | Ozhegov, R. V.; Gorshkov, K. N.; Okunev, O. V.; Gol’tsman, G. N. | ||||
| Title | Superconducting hot-electron bolometer mixer as element of thermal imager matrix | Type | Journal Article | ||
| Year | 2010 | Publication | Tech. Phys. Lett. | Abbreviated Journal | Tech. Phys. Lett. |
| Volume | 36 | Issue | 11 | Pages | 1006-1008 |
| Keywords | HEB mixers | ||||
| Abstract | The possibility of using a matrix of sensitive elements on a 12-mm-diameter hyperhemispherical lens in a thermal imager operating in the terahertz range has been studied. Dimensions of a lens region acceptable for arrangement of the matrix, in which the receiver noise temperature varies within 16% of the mean value, are determined to be 3.3% of the lens diameter. Deviations of the main lobe of the directivity pattern are evaluated, which amount to ±1.25° relative to the direction toward the optimum position of a mixer. The fluctuation sensitivity of the receiver measured in experiment is 0.5 K at a frequency of 300 GHz. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7850 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1390 | |||
| Permanent link to this record | |||||
| Author | Polyakova, O. N.; Tikhonov, V. V.; Dzardanov, A. L.; Boyarskii, D. A.; Gol’tsman, G. N. | ||||
| Title | Dielectric characteristics of ore minerals in a 10–40 GHz frequency range | Type | Journal Article | ||
| Year | 2008 | Publication | Tech. Phys. Lett. | Abbreviated Journal | Tech. Phys. Lett. |
| Volume | 34 | Issue | 11 | Pages | 967-970 |
| Keywords | ore minerals, complex permittivity, sphalerite, magnetite, labradorite | ||||
| Abstract | A new approach to investigation of the complex dielectric permittivity of both nonmetallic and ore minerals in the microwave frequency range is proposed. Using this approach, data on the complex permittivity of sphalerite, magnetite, and labradorite in a 10–40 GHz frequency range have been obtained for the first time. A method is proposed for calculating the complex permittivity from experimentally measured frequency dependences of the reflection and transmission coefficients of a plane-parallel plate of a given mineral. Approximate expressions that can be used for calculations of the complex refractive index and permittivity of minerals are presented. | ||||
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| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7850 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1406 | |||
| Permanent link to this record | |||||
| Author | Smirnov, A. V.; Karmantsov, M. S.; Smirnov, K. V.; Vakhtomin, Y. B.; Masterov, D. V.; Tarkhov, M. A.; Pavlov, S. A.; Parafin, A. E. | ||||
| Title | Terahertz response of thin-film YBCO bolometers | Type | Journal Article | ||
| Year | 2012 | Publication | Tech. Phys. | Abbreviated Journal | Tech. Phys. |
| Volume | 57 | Issue | 12 | Pages | 1716-1719 |
| Keywords | YBCO HEB | ||||
| Abstract | The bolometric response of high-temperature thin-film YBCO superconducting detectors to an electromagnetic radiation with a frequency of 2.5 THz is measured for the first time. The minimum value of the noise-equivalent power of the detectors is 3.5 × 10−9 W/Hz−−−√. The feasibility of further increasing the sensitivity of the detectors is discussed. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7842 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1817 | |||
| Permanent link to this record | |||||
| Author | Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. | ||||
| Title | Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers | Type | Journal Article | ||
| Year | 2012 | Publication | Tech. Phys. | Abbreviated Journal | Tech. Phys. |
| Volume | 57 | Issue | 7 | Pages | 971-974 |
| Keywords | semiconducting superlattice frequency multiplier, NbN HEB mixers | ||||
| Abstract | We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7842 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1378 | |||
| Permanent link to this record | |||||
| Author | Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Kovalyuk, V. V.; Gorshkov, K. N.; Kazakov, A. Y.; Ivanov, S. Y.; Egorov, A. Y.; Sakseev, D. A.; Konnikov, S. G. | ||||
| Title | Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices | Type | Journal Article | ||
| Year | 2011 | Publication | Tech. Phys. | Abbreviated Journal | Tech. Phys. |
| Volume | 56 | Issue | 6 | Pages | 826-830 |
| Keywords | GaAs/AlGaAs superlattices | ||||
| Abstract | The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7842 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1214 | |||
| Permanent link to this record | |||||
| Author | Shein, K. V.; Zarudneva, A. A.; Emel’yanova, V. O.; Logunova, M. A.; Chichkov, V. I.; Sobolev, A.S.; Zav’yalov, V. V.; Lehtinen, J. S.; Smirnov, E. O.; Korneeva, Y. P.; Korneev, A. A.; Arutyunov, K. Y. | ||||
| Title | Superconducting microstructures with high impedance | Type | Journal Article | ||
| Year | 2020 | Publication | Phys. Solid State | Abbreviated Journal | Phys. Solid State |
| Volume | 62 | Issue | 9 | Pages | 1539-1542 |
| Keywords | superconducting channels, SIS, inetic inductance, tunneling contacts, high impedance | ||||
| Abstract | The transport properties of two types of quasi-one-dimensional superconducting microstructures were investigated at ultra-low temperatures: the narrow channels close-packed in the shape of meander, and the chains of tunneling contacts “superconductor-insulator-superconductor.” Both types of the microstructures demonstrated high value of high-frequency impedance and-or the dynamic resistance. The study opens up potential for using of such structures as current stabilizing elements with zero dissipation. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7834 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1789 | |||
| Permanent link to this record | |||||